Wang; Hui-Chuan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wang; Hui-Chuan.The latest application filed is for "magnetic read head with magnetoresistive (mr) enhancements toward low resistance x area (ra) product".

Company Profile

1.79.72

Wang; Hui-Chuan - Pleasanton CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Magnetic read head with magnetoresistive (MR) enhancements toward low resistance X area (RA) product Grant 9,601,137 - Zhang , et al. March 21, 2	2017-03-21
TMR device with novel free layer structure Grant 9,577,184 - Zhao , et al. February 21, 2	2017-02-21
Magnetic read head with MR enhancements Grant 9,515,253 - Zhang , et al. December 6, 2	2016-12-06
TMR device with novel free layer Grant 9,484,049 - Wang , et al. November 1, 2	2016-11-01
TMR device with novel free layer structure Grant 9,437,812 - Zhao , et al. September 6, 2	2016-09-06
Magnetic Read Head with Magnetoresistive (MR) Enhancements Toward Low Resistance X Area (RA) Product App 20160180869 - Zhang; Kunliang ; et al.	2016-06-23
Magnetic seed for improving blocking temperature and shield to shield spacing in a TMR sensor Grant 9,281,469 - Quan , et al. March 8, 2	2016-03-08
TMR device with low magnetostriction free layer Grant 9,214,170 - Wang , et al. December 15, 2	2015-12-15
Magnetic Read Head with MR Enhancements App 20150295168 - Zhang; Kunliang ; et al.	2015-10-15
TMR Device with Novel Free Layer Structure App 20150249210 - Zhao; Tong ; et al.	2015-09-03
TMR Device with Novel Free Layer Structure App 20150248902 - Zhao; Tong ; et al.	2015-09-03
TMR Device with Low Magnetostriction Free Layer App 20150235660 - Wang; Hui-Chuan ; et al.	2015-08-20
Magnetic read head with MR enhancements Grant 9,082,872 - Zhang , et al. July 14, 2	2015-07-14
TMR device with novel free layer structure Grant 9,040,178 - Zhao , et al. May 26, 2	2015-05-26
Two step annealing process for TMR device with amorphous free layer Grant 9,021,685 - Zhao , et al. May 5, 2	2015-05-05
Magnetic Seed for Improving Blocking Temperature and Shield to Shield Spacing in a TMR Sensor App 20150108593 - Quan; Junjie ; et al.	2015-04-23
Magnetic seed method for improving blocking temperature and shield to shield spacing in a TMR sensor Grant 8,921,126 - Quan , et al. December 30, 2	2014-12-30
Two step method to fabricate small dimension devices for magnetic recording applications Grant 8,865,008 - Ding , et al. October 21, 2	2014-10-21
TMR Device with Novel Free Layer App 20140287267 - Wang; Hui-Chuan ; et al.	2014-09-25
Magnetic Seed for Improving Blocking Temperature and Shield to Shield Spacing in a TMR Sensor App 20140210022 - Quan; Junjie ; et al.	2014-07-31
Magnetic Read Head with MR Enhancements App 20140183673 - Zhang; Kunliang ; et al.	2014-07-03
TMR device with novel free layer Grant 8,747,629 - Wang , et al. June 10, 2	2014-06-10
Method to fabricate small dimension devices for magnetic recording applications Grant 8,728,333 - Wang , et al. May 20, 2	2014-05-20
Two Step Method to Fabricate Small Dimension Devices for Magnetic Recording Applications App 20140116984 - Ding; Ruhang ; et al.	2014-05-01
MR device with synthetic free layer structure Grant 8,653,615 - Zhao , et al. February 18, 2	2014-02-18
TMR Device with Low Magnetoresistive Free Layer App 20130277780 - Wang; Hui-Chuan ; et al.	2013-10-24
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier Grant 8,557,407 - Zhao , et al. October 15, 2	2013-10-15
TMR device with low magnetorestriction free layer Grant 8,472,151 - Wang , et al. June 25, 2	2013-06-25
TMR device with novel free layer structure Grant 8,456,781 - Zhao , et al. June 4, 2	2013-06-04
TMR device with novel free layer structure Grant 8,385,027 - Zhao , et al. February 26, 2	2013-02-26
TMR Device with Novel Free Layer Structure App 20130001189 - Zhao; Tong ; et al.	2013-01-03
TMR or CPP structure with improved exchange properties Grant 8,339,754 - Zhang , et al. December 25, 2	2012-12-25
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier Grant 8,337,676 - Zhao , et al. December 25, 2	2012-12-25
Magnetic memory cell Grant 8,335,105 - Wang , et al. December 18, 2	2012-12-18
Pinning field in MR devices despite higher annealing temperature Grant 8,325,448 - Zhang , et al. December 4, 2	2012-12-04
Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers Grant 8,289,663 - Zhang , et al. October 16, 2	2012-10-16
TMR Device with Improved MgO Barrier App 20120235258 - Zhao; Tong ; et al.	2012-09-20
TMR device with novel free layer structure Grant 8,259,420 - Zhao , et al. September 4, 2	2012-09-04
Pinning field in MR devices despite higher annealing temperature App 20120205757 - Zhang; Kunliang ; et al.	2012-08-16
TMR Device with Low Magnetorestriction Free Layer App 20120193738 - Wang; Hui-Chuan ; et al.	2012-08-02
TMR device with improved MgO barrier Grant 8,202,572 - Zhao , et al. June 19, 2	2012-06-19
Tmr Device With Improved Mgo Barrier App 20120128870 - Zhao; Tong ; et al.	2012-05-24
Seed layer for TMR or CPP-GMR sensor Grant 8,164,862 - Zhang , et al. April 24, 2	2012-04-24
TMR device with novel free layer structure App 20120038012 - Zhao; Tong ; et al.	2012-02-16
Process for composite free layer in CPP GMR or TMR device Grant 8,105,703 - Wang , et al. January 31, 2	2012-01-31
TMR device with novel pinned layer App 20110318608 - Wang; Hui-Chuan ; et al.	2011-12-29
TMR device with novel free layer structure Grant 8,059,374 - Zhao , et al. November 15, 2	2011-11-15
TMR or CPP structure with improved exchange properties App 20110268992 - Zhang; Kunliang ; et al.	2011-11-03
Tunneling magneto-resistive spin valve sensor with novel composite free layer Grant 8,035,931 - Zhao , et al. October 11, 2	2011-10-11
Low resistance tunneling magnetoresistive sensor with composite inner pinned layer Grant 8,008,740 - Zhao , et al. August 30, 2	2011-08-30
Method to fabricate small dimension devices for magnetic recording applications App 20110198314 - Wang; Hui-Chuan ; et al.	2011-08-18
TMR device with novel free layer structure App 20110188157 - Zhao; Tong ; et al.	2011-08-04
TMR device with surfactant layer on top of CoFe.sub.xB.sub.y/CoFe.sub.z inner pinned layer Grant 7,986,498 - Wang , et al. July 26, 2	2011-07-26
AP1 layer for TMR device Grant 7,983,011 - Zhao , et al. July 19, 2	2011-07-19
TMR or CPP structure with improved exchange properties Grant 7,978,439 - Zhang , et al. July 12, 2	2011-07-12
Process of making an improved AP1 layer for a TMR device Grant 7,950,136 - Zhao , et al. May 31, 2	2011-05-31
Method of forming a high performance tunneling magnetoresistive (TMR) element Grant 7,861,401 - Wang , et al. January 4, 2	2011-01-04
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier App 20100320076 - Zhao; Tong ; et al.	2010-12-23
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier App 20100304185 - Zhao; Tong ; et al.	2010-12-02
TMR device with Hf based seed layer Grant 7,829,963 - Wang , et al. November 9, 2	2010-11-09
Tunneling magneto-resistive spin valve sensor with novel composite free layer App 20100247966 - Zhao; Tong ; et al.	2010-09-30
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier Grant 7,780,820 - Zhao , et al. August 24, 2	2010-08-24
TMR device with novel free layer stucture App 20100177449 - Zhao; Tong ; et al.	2010-07-15
Tunneling magneto-resistive spin valve sensor with novel composite free layer Grant 7,742,261 - Zhao , et al. June 22, 2	2010-06-22
MR device with synthetic free layer structure App 20100123208 - Zhao; Tong ; et al.	2010-05-20
TMR device with novel free layer structure App 20100073827 - Zhao; Tong ; et al.	2010-03-25
TMR device with novel free layer App 20100073828 - Wang; Hui-Chuan ; et al.	2010-03-25
Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications Grant 7,672,088 - Zhang , et al. March 2, 2	2010-03-02
Low resistance tunneling magnetoresistive sensor with composite inner pinned layer App 20100019333 - Zhao; Tong ; et al.	2010-01-28
Ultra thin seed layer for CPP or TMR structure Grant 7,646,568 - Zhang , et al. January 12, 2	2010-01-12
Seed layer for fabricating spin valve heads for ultra-high density recordings Grant 7,630,176 - Horng , et al. December 8, 2	2009-12-08
Ultra low RA sensors App 20090269617 - Zhang; Kunliang ; et al.	2009-10-29
Tunneling magneto-resistive spin valve sensor with novel composite free layer Grant 7,602,590 - Zhao , et al. October 13, 2	2009-10-13
Low resistance tunneling magnetoresistive sensor with composite inner pinned layer Grant 7,602,033 - Zhao , et al. October 13, 2	2009-10-13
Seed layer for TMR or CPP-GMR sensor App 20090251829 - Zhang; Kunliang ; et al.	2009-10-08
Two step annealing process for TMR device with amorphous free layer App 20090229111 - Zhao; Tong ; et al.	2009-09-17
TMR device with Hf based seed layer App 20090194833 - Wang; Hui-Chuan ; et al.	2009-08-06
CoFe insertion for exchange bias and sensor improvement Grant 7,564,658 - Zhang , et al. July 21, 2	2009-07-21
Seed layer for fabricating spin valve heads for ultra-high density recordings Grant 7,564,660 - Horng , et al. July 21, 2	2009-07-21
TMR device with surfactant layer on top of CoFexBy/CoFez inner pinned layer App 20090165288 - Wang; Hui-Chuan ; et al.	2009-07-02
TMR device with surfactant layer on top of cofexby/cofez inner pinned layer App 20090161266 - Wang; Hui-Chuan ; et al.	2009-06-25
TMR device with low magnetostriction free layer App 20090122450 - Wang; Hui-Chuan ; et al.	2009-05-14
Novel free layer design for TMR/CPP device App 20090121710 - Wang; Hui-Chuan ; et al.	2009-05-14
Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R Grant 7,528,457 - Horng , et al. May 5, 2	2009-05-05
Exchange bias structure for abutted junction GMR sensor Grant 7,529,067 - Li , et al. May 5, 2	2009-05-05
Process of manufacturing a TMR device Grant 7,497,007 - Wang , et al. March 3, 2	2009-03-03
TMR device with Hf based seed layer Grant 7,476,954 - Wang , et al. January 13, 2	2009-01-13
TMR or CPP structure with improved exchange properties App 20080316657 - Zhang; Kunliang ; et al.	2008-12-25
Low resistance tunneling magnetoresistive sensor with composite inner pinned layer App 20080299679 - Zhao; Tong ; et al.	2008-12-04
Process for composite free layer in CPP GMR or TMR device App 20080260943 - Wang; Hui-Chuan ; et al.	2008-10-23
MR device with surfactant layer within the free layer App 20080246103 - Wang; Hui-Chuan ; et al.	2008-10-09
Composite free layer for CIP GMR device Grant 7,431,961 - Zhao , et al. October 7, 2	2008-10-07
Magnetic memory cell App 20080219042 - Wang; Hui-Chuan ; et al.	2008-09-11
AP1 layer for TMR device App 20080212243 - Zhao; Tong ; et al.	2008-09-04
AP1 layer for TMR device App 20080209714 - Zhao; Tong ; et al.	2008-09-04
TMR device with Hf based seed layer App 20080171223 - Wang; Hui-Chuan ; et al.	2008-07-17
Structure and process for composite free layer in CPP GMR device Grant 7,390,530 - Wang , et al. June 24, 2	2008-06-24
Method of forming an improved AP1 layer for a TMR device Grant 7,377,025 - Zhao , et al. May 27, 2	2008-05-27
Magnetoresistive spin valve sensor with tri-layer free layer Grant 7,333,306 - Zhao , et al. February 19, 2	2008-02-19
Self-pinned GMR structure by annealing Grant 7,320,169 - Li , et al. January 22, 2	2008-01-22
Novel way to reduce the ordering temperature for Co2MnSi-like Heusler alloys for CPP, TMR, MRAM, or other spintronics device applications App 20070297103 - Zhang; Kunliang ; et al.	2007-12-27
Novel method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R App 20070243638 - Horng; Cheng T. ; et al.	2007-10-18
Novel seed layer for fabricating spin valve heads for ultra-high density recordings App 20070223151 - Horng; Cheng T. ; et al.	2007-09-27
Novel seed layer for fabricating spin valve heads for ultra-high density recordings App 20070220740 - Horng; C.T. ; et al.	2007-09-27
Ultra thin seed layer for CPP or TMR structure App 20070146928 - Zhang; Kunliang ; et al.	2007-06-28
Method of fabricating novel seed layers for fabricating spin valve heads Grant 7,234,228 - Horng , et al. June 26, 2	2007-06-26
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier App 20070111332 - Zhao; Tong ; et al.	2007-05-17
Magnetoresistive spin valve sensor with tri-layer free layer App 20070047159 - Zhao; Tong ; et al.	2007-03-01
TMR device with surfactant layer on top of CoFexBy/CoFez inner pinned layer App 20070015293 - Wang; Hui-Chuan ; et al.	2007-01-18
Lead plating method for GMR head manufacture Grant 7,111,386 - Chen , et al. September 26, 2	2006-09-26
Easily manufactured exchange bias stabilization scheme Grant 7,099,125 - Li , et al. August 29, 2	2006-08-29
Exchange bias structure for abutted junction GMR sensor App 20060164766 - Li; Yun-Fei ; et al.	2006-07-27
Tunneling magneto-resistive spin valve sensor with novel composite free layer App 20060152861 - Zhao; Tong ; et al.	2006-07-13
Tunneling magneto-resistive spin valve sensor with novel composite free layer App 20060153978 - Zhao; Tong ; et al.	2006-07-13
Composite free layer for CIP GMR device App 20060126231 - Zhao; Tong ; et al.	2006-06-15
Structure and process for composite free layer in CPP GMR device App 20060114621 - Wang; Hui-Chuan ; et al.	2006-06-01
Bottom spin valve sensor having a lead overlay (LOL) structure fabricated thereon Grant 7,050,273 - Horng , et al. May 23, 2	2006-05-23
AP1 layer for TMR device App 20060092578 - Zhao; Tong ; et al.	2006-05-04
Easily manufactured exchange bias stabilization scheme Grant 7,035,060 - Li , et al. April 25, 2	2006-04-25
Exchange bias structure for abutted junction GMR sensor Grant 7,022,383 - Li , et al. April 4, 2	2006-04-04
CoFe insertion for exchange bias and sensor improvement App 20060061915 - Zhang; Kunliang ; et al.	2006-03-23
Easily manufactured exchange bias stabilization scheme App 20060061916 - Li; Yun-Fei ; et al.	2006-03-23
Lead plating method for GMR head manufacture App 20060048375 - Chen; Chao-Peng ; et al.	2006-03-09
Lead plating method for GMR head manufacture Grant 6,973,712 - Chen , et al. December 13, 2	2005-12-13
Self-pinned GMR structure by annealing App 20050252576 - Li, Yun-Fei ; et al.	2005-11-17
Double layer spacer for antiparallel pinned layer in CIP/CPP GMR and MTJ devices Grant 6,870,711 - Zhao , et al. March 22, 2	2005-03-22
Structure and process to fabricate lead overlay (LOL) on the bottom spin valve App 20050041339 - Horng, Cheng T. ; et al.	2005-02-24
Boron doped CoFe for GMR free layer Grant 6,844,999 - Wang , et al. January 18, 2	2005-01-18
Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor Grant 6,785,954 - Horng , et al. September 7, 2	2004-09-07
Novel seed layers for fabricating spin valve heads for ultra-high density recordings App 20040105193 - Horng, C.T. ; et al.	2004-06-03
Exchange bias structure for abutted junction GMR sensor App 20040075960 - Li, Yun-Fei ; et al.	2004-04-22
Boron doped CoFe for GMR free layer App 20040047086 - Wang, Hui-Chuan ; et al.	2004-03-11
Structure and process to fabricate lead overlay (LOL) on the bottom spin valve App 20030197983 - Horng, Cheng T. ; et al.	2003-10-23
Easily manufactured exchange bias stabilization scheme App 20030167625 - Li, Yun-Fei ; et al.	2003-09-11
Lead plating method for GMR head manufacture App 20030167626 - Chen, Chao-Peng ; et al.	2003-09-11
Layered structure for magnetic recording heads App 20030072970 - Li, Yun-Fei ; et al.	2003-04-17
Copper alloy GMR recording head Grant 6,496,337 - Wang , et al. December 17, 2	2002-12-17
Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof Grant 6,449,131 - Guo , et al. September 10, 2	2002-09-10
Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element Grant 6,322,640 - Xiao , et al. November 27, 2	2001-11-27
Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof App 20010021087 - Guo, Yimin ; et al.	2001-09-13
Method of forming a second antiferromagnetic exchange-coupling layer for magnetoresistive (MR) and giant MR (GMR) applications Grant 6,129,957 - Xiao , et al. October 10, 2	2000-10-10
Planarizing method for fabricating an inductive magnetic write head for high density magnetic recording Grant 6,024,886 - Han , et al. February 15, 2	2000-02-15

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