| Patent | Date |
|---|
Memory cell with a flat-topped floating gate structure
Grant 10,700,077 - Hymas , et al. | 2020-06-30 |
Memory cell with oxide cap and spacer layer for protecting a floating gate from a source implant
Grant 10,546,947 - Hymas , et al. Ja | 2020-01-28 |
Flash memory cell with dual erase modes for increased cell endurance
Grant 10,482,975 - Reboulet , et al. Nov | 2019-11-19 |
Floating gate spacer for controlling a source region formation in a memory cell
Grant 10,424,589 - Walls , et al. Sept | 2019-09-24 |
Flash Memory Cell with Dual Erase Modes for Increased Cell Endurance
App 20190287624 - Reboulet; Luc ; et al. | 2019-09-19 |
Floating Gate Spacer For Controlling A Source Region Formation In A Memory Cell
App 20190252395 - Walls; James ; et al. | 2019-08-15 |
Memory cell with asymmetric word line and erase gate for decoupled program erase performance
Grant 10,347,728 - Hymas , et al. July 9, 2 | 2019-07-09 |
Memory Cell With A Flat-Topped Floating Gate Structure
App 20190206881 - Hymas; Mel ; et al. | 2019-07-04 |
Memory Cell With Asymmetric Word Line And Erase Gate For Decoupled Program Erase Performance
App 20190207006 - Hymas; Mel ; et al. | 2019-07-04 |
Split-Gate Memory Cell With Field-Enhanced Source Junctions, And Method Of Forming Such Memory Cell
App 20190207034 - Daryanani; Sonu ; et al. | 2019-07-04 |
Memory Cell With Oxide Cap And Spacer Layer For Protecting A Floating Gate From A Source Implant
App 20190097027 - Hymas; Mel ; et al. | 2019-03-28 |
Resistive Memory Cell With Sloped Bottom Electrode
App 20180287057 - Walls; James ; et al. | 2018-10-04 |
Resistive memory cell with sloped bottom electrode
Grant 10,003,021 - Walls , et al. June 19, 2 | 2018-06-19 |
Resistive memory cell having a reduced conductive path area
Grant 9,917,251 - Fest , et al. March 13, 2 | 2018-03-13 |
Resistive memory cell having a single bottom electrode and two top electrodes
Grant 9,865,814 - Fest , et al. January 9, 2 | 2018-01-09 |
Resistive Memory Cell Having A Reduced Conductive Path Area
App 20160315257 - Fest; Paul ; et al. | 2016-10-27 |
Resistive memory cell with bottom electrode having a sloped side wall
Grant 9,412,942 - Walls , et al. August 9, 2 | 2016-08-09 |
Resistive memory cell having a reduced conductive path area
Grant 9,385,313 - Fest , et al. July 5, 2 | 2016-07-05 |
Resistive Memory Cell Having A Reduced Conductive Path Area
App 20160190442 - Fest; Paul ; et al. | 2016-06-30 |
Resistive Memory Cell With Sloped Bottom Electrode
App 20160190441 - Walls; James ; et al. | 2016-06-30 |
Resistive memory cell with trench-shaped bottom electrode
Grant 9,362,496 - Walls , et al. June 7, 2 | 2016-06-07 |
Resistive memory cell with trench-shaped bottom electrode
Grant 9,349,950 - Walls May 24, 2 | 2016-05-24 |
Resistive memory cell having a reduced conductive path area
Grant 9,318,702 - Fest , et al. April 19, 2 | 2016-04-19 |
Resistive Memory Cell with Sloped Bottom Electrode
App 20150236257 - Walls; James ; et al. | 2015-08-20 |
Resistive Memory Cell Having A Reduced Conductive Path Area
App 20150236258 - Fest; Paul ; et al. | 2015-08-20 |
Resistive Memory Cell having a Reduced Conductive Path Area
App 20150236255 - Fest; Paul ; et al. | 2015-08-20 |
Resistive Memory Cell with Sloped Bottom Electrode
App 20150236256 - Walls; James ; et al. | 2015-08-20 |
Resistive Memory Cell with Trench-Shaped Bottom Electrode
App 20140264246 - Walls; James ; et al. | 2014-09-18 |
Resistive Memory Cell with Trench-Shaped Bottom Electrode
App 20140264245 - Walls; James | 2014-09-18 |
Probe cover with lubrication well
Grant 6,619,837 - Walls , et al. September 16, 2 | 2003-09-16 |
Probe cover with lubrication well
App 20020172257 - Walls, James ; et al. | 2002-11-21 |
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