loadpatents
name:-0.030076026916504
name:-0.0262610912323
name:-0.0045769214630127
Wakabayashi; Hitoshi Patent Filings

Wakabayashi; Hitoshi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Wakabayashi; Hitoshi.The latest application filed is for "1-(n,n-disubstituted carbamoyl) 4-(substituted sulfonyl)triazolin-5-one derivative, 4-(n,n-disubstituted carbamoyl) 1-(substituted sulfonyl)triazolin-5-one derivative, and herbicide containing said derivative as active ingredient".

Company Profile
3.23.24
  • Wakabayashi; Hitoshi - Kanagawa JP
  • Wakabayashi; Hitoshi - Tokyo JP
  • WAKABAYASHI; Hitoshi - Yokohama JP
  • Wakabayashi; Hitoshi - Chofu Tokyo JP
  • Wakabayashi; Hitoshi - Minato-ku JP
  • Wakabayashi; Hitoshi - Kawasaki JA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
1-(n,n-disubstituted carbamoyl) 4-(substituted sulfonyl)triazolin-5-one derivative, 4-(n,n-disubstituted carbamoyl) 1-(substituted sulfonyl)triazolin-5-one derivative, and herbicide containing said derivative as active ingredient
Grant 11,076,595 - Suzuki , et al. August 3, 2
2021-08-03
Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions
Grant 10,854,751 - Mayuzumi , et al. December 1, 2
2020-12-01
1-(n,n-disubstituted Carbamoyl) 4-(substituted Sulfonyl)triazolin-5-one Derivative, 4-(n,n-disubstituted Carbamoyl) 1-(substituted Sulfonyl)triazolin-5-one Derivative, And Herbicide Containing Said Derivative As Active Ingredient
App 20200367499 - SUZUKI; Jun ;   et al.
2020-11-26
Method For Evaluating Electrical Defect Density Of Semiconductor Layer, And Semiconductor Element
App 20200225276 - KAKUSHIMA; Kuniyuki ;   et al.
2020-07-16
Charge Trap Evaluation Method And Semiconductor Element
App 20200203493 - KAKUSHIMA; Kuniyuki ;   et al.
2020-06-25
Semiconductor Device Having Curved Gate Electrode Aligned With Curved Side-wall Insulating Film And Stress-introducing Layer Bet
App 20200119194 - Mayuzumi; Satoru ;   et al.
2020-04-16
Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions
Grant 10,535,769 - Mayuzumi , et al. Ja
2020-01-14
Semiconductor Device Having Curved Gate Electrode Aligned With Curved Side-wall Insulating Film And Stress-introducing Layer Bet
App 20190207029 - Mayuzumi; Satoru ;   et al.
2019-07-04
Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions
Grant 10,269,961 - Mayuzumi , et al.
2019-04-23
Semiconductor Device Having Curved Gate Electrode Aligned With Curved Side-wall Insulating Film And Stress-introducing Layer Between Channel Region And Source And Drain Regions
App 20180190820 - Mayuzumi; Satoru ;   et al.
2018-07-05
Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions
Grant 9,947,790 - Mayuzumi , et al. April 17, 2
2018-04-17
Semiconductor Device Having Curved Gate Electrode Aligned With Curved Side-wall Insulating Film And Stress-introducing Layer Between Channel Region And Source And Drain Regions
App 20170148915 - Mayuzumi; Satoru ;   et al.
2017-05-25
Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions
Grant 9,601,622 - Mayuzumi , et al. March 21, 2
2017-03-21
Semiconductor Device Having Curved Gate Electrode Aligned With Curved Side-wall Insulating Film And Stress-introducing Layer Between Channel Region And Source And Drain Regions
App 20160218213 - Mayuzumi; Satoru ;   et al.
2016-07-28
Semiconductor device
Grant 9,343,536 - Saito , et al. May 17, 2
2016-05-17
Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions
Grant 9,337,305 - Mayuzumi , et al. May 10, 2
2016-05-10
Semiconductor Device
App 20160043187 - Saito; Wataru ;   et al.
2016-02-11
Semiconductor Device Having A Stress-introducing Layer Between Channel Region And Source And Drain Regions
App 20150340499 - Mayuzumi; Satoru ;   et al.
2015-11-26
Semiconductor device having a stress-inducing layer between channel region and source and drain regions
Grant 9,153,663 - Mayuzumi , et al. October 6, 2
2015-10-06
Semiconductor device with field effect transistor and manufacturing method thereof
Grant 8,384,167 - Kikuchi , et al. February 26, 2
2013-02-26
Semiconductor Device And Manufacturing Method Thereof
App 20110042758 - Kikuchi; Yoshiaki ;   et al.
2011-02-24
Semiconductor Device And Manufacturing Method Thereof
App 20100314694 - Mayuzumi; Satoru ;   et al.
2010-12-16
Semiconductor device and manufacturing method thereof
Grant 7,830,703 - Takeda , et al. November 9, 2
2010-11-09
Semiconductor device and method of manufacturing semiconductor device
Grant 7,723,808 - Okuda , et al. May 25, 2
2010-05-25
Semiconductor device with fin-type field effect transistor and manufacturing method thereof.
Grant 7,719,043 - Yamagami , et al. May 18, 2
2010-05-18
Semiconductor device and method for manufacturing same
Grant 7,701,018 - Yamagami , et al. April 20, 2
2010-04-20
Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same
Grant 7,612,416 - Takeuchi , et al. November 3, 2
2009-11-03
Semiconductor Device and Method of Manufacturing Semiconductor Device
App 20090026504 - Okuda; Yoshifumi ;   et al.
2009-01-29
Substrate for field effect transistor, field effect transistor and method for production thereof
App 20090014795 - Koh; Risho ;   et al.
2009-01-15
Semiconductor Device and Method for Manufacturing Same
App 20080251849 - Yamagami; Shigeharu ;   et al.
2008-10-16
Semiconductor Device And Manufacturing Method Thereof
App 20080079077 - Takeda; Koichi ;   et al.
2008-04-03
Semiconductor Device and Method for Production Thereof
App 20080029821 - Yamagami; Shigeharu ;   et al.
2008-02-07
Semiconductor Device and Method for Manufacturing the Same
App 20070257277 - Takeda; Koichi ;   et al.
2007-11-08
Semiconductor device having fin-type effect transistor
App 20070187682 - Takeuchi; Kiyoshi ;   et al.
2007-08-16
Semiconductor device and method for producing the same
App 20070132009 - Takeuchi; Kiyoshi ;   et al.
2007-06-14
Semiconductor device and manufacturing process therefor
App 20070075372 - Terashima; Koichi ;   et al.
2007-04-05
Soi Mosfet
Grant 6,933,569 - Koh , et al. August 23, 2
2005-08-23
Semiconductor device and method of manufacturing the same
Grant 6,916,695 - Wakabayashi , et al. July 12, 2
2005-07-12
Semiconductor device and method for manufacturing the same
App 20040129975 - Koh, Risho ;   et al.
2004-07-08
Semiconductor device and method of manufacturing the same
App 20020179975 - Wakabayashi, Hitoshi ;   et al.
2002-12-05
Semiconductor device and method of manufacturing the same
Grant 6,483,151 - Wakabayashi , et al. November 19, 2
2002-11-19
Semiconductor device and method of manufacturing the same
App 20010015463 - Wakabayashi, Hitoshi ;   et al.
2001-08-23
Method for manufacturing semiconductor device capable of flattening surface of selectively-grown silicon layer
Grant 6,121,120 - Wakabayashi , et al. September 19, 2
2000-09-19
Method of fabricating semiconductor device having refractory metal silicide layer on impurity region using damage implant and single step anneal
Grant 5,593,923 - Horiuchi , et al. January 14, 1
1997-01-14
Stereophonic sound reproduction system
Grant 4,069,394 - Doi , et al. January 17, 1
1978-01-17

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