loadpatents
name:-0.019531011581421
name:-0.016824960708618
name:-0.0010750293731689
Tang; Shaoping Patent Filings

Tang; Shaoping

Patent Applications and Registrations

Patent applications and USPTO patent grants for Tang; Shaoping.The latest application filed is for "three-axis linkage embroidery machine frame and embroidery machine".

Company Profile
0.19.16
  • Tang; Shaoping - Shenzhen CN
  • Tang; Shaoping - Plano TX
  • Tang; Shaoping - Allen TX
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Three-axis Linkage Embroidery Machine Frame And Embroidery Machine
App 20210222337 - Chen; Xuesheng ;   et al.
2021-07-22
Transistor performance modification with stressor structures
Grant 9,773,793 - Summerfelt , et al. September 26, 2
2017-09-26
N-channel demos device
Grant 9,608,109 - Tsai , et al. March 28, 2
2017-03-28
Low cost demos transistor with improved CHC immunity
Grant 9,577,094 - Tang , et al. February 21, 2
2017-02-21
Low Cost Demos Transistor With Improved Chc Immunity
App 20160035890 - TANG; Shaoping ;   et al.
2016-02-04
Low cost demos transistor with improved CHC immunity
Grant 9,202,912 - Tang , et al. December 1, 2
2015-12-01
Low Cost Demos Transistor With Improved Chc Immunity
App 20150187938 - TANG; Shaoping ;   et al.
2015-07-02
Radiation hardened integrated circuit
Grant 8,530,298 - Roybal , et al. September 10, 2
2013-09-10
Radiation Hardened Integrated Circuit
App 20130105904 - ROYBAL; RICHARD G. ;   et al.
2013-05-02
Transistor Performance Modification with Stressor Structures
App 20110084323 - Summerfelt; Scott R. ;   et al.
2011-04-14
Intentional pocket shadowing to compensate for the effects of cross-diffusion in SRAMs
Grant 7,795,085 - Yoon , et al. September 14, 2
2010-09-14
High threshold NMOS source-drain formation with As, P and C to reduce damage
Grant 7,736,983 - Kohli , et al. June 15, 2
2010-06-15
Multi-stage implant to improve device characteristics
Grant 7,691,700 - Mehrotra , et al. April 6, 2
2010-04-06
Method of preparing a semiconductor substrate utilizing plural implants under an isolation region to isolate adjacent wells
Grant 7,662,690 - Tang , et al. February 16, 2
2010-02-16
Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance
Grant 7,601,575 - Bu , et al. October 13, 2
2009-10-13
HIGH THRESHOLD NMOS SOURCE-DRAIN FORMATION WITH As, P AND C TO REDUCE DAMAGE
App 20090179280 - Kohli; Puneet ;   et al.
2009-07-16
Multi-stage Implant To Improve Device Characteristics
App 20090004803 - Mehrotra; Manoj ;   et al.
2009-01-01
Nwell to nwell isolation
App 20070176263 - Tang; Shaoping ;   et al.
2007-08-02
Design method and system for optimum performance in integrated circuits that use power management
Grant 7,216,310 - Chatterjee , et al. May 8, 2
2007-05-08
Method to engineer the inverse narrow width effect (INWE) in CMOS technology using shallow trench isolation (STI)
Grant 7,045,436 - Chatterjee , et al. May 16, 2
2006-05-16
Method to engineer the inverse narrow width effect (INWE) in CMOS technology using shallow trench isolation (STI)
App 20060024910 - Chatterjee; Amitava ;   et al.
2006-02-02
Methods for improving well to well isolation
Grant 6,933,203 - Wu , et al. August 23, 2
2005-08-23
Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance
Grant 6,930,007 - Bu , et al. August 16, 2
2005-08-16
Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance
App 20050164431 - Bu, Haowen ;   et al.
2005-07-28
Design method and system for optimum performance in integrated circuits that use power management
App 20050149887 - Chatterjee, Amitava ;   et al.
2005-07-07
Method for introducing hydrogen into a channel region of a metal oxide semiconductor (MOS) device
App 20050118770 - Nandakumar, Mahalingam ;   et al.
2005-06-02
Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance
App 20050059228 - Bu, Haowen ;   et al.
2005-03-17
Process to reduce gate edge drain leakage in semiconductor devices
Grant 6,855,984 - Wu , et al. February 15, 2
2005-02-15
High performance PNP bipolar device fully compatible with CMOS process
Grant 6,794,730 - Kim , et al. September 21, 2
2004-09-21
Methods for improving well to well isolation
App 20040097051 - Wu, Zhiqiang ;   et al.
2004-05-20
High-dielectric constant capacitor and memory
Grant 6,462,931 - Tang , et al. October 8, 2
2002-10-08
High performance PNP bipolar device fully compatible with CMOS process
App 20020084495 - Kim, Youngmin ;   et al.
2002-07-04

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