loadpatents
Patent applications and USPTO patent grants for Suekawa; Eisuke.The latest application filed is for "semiconductor device".
Patent | Date |
---|---|
Manufacturing method for a semiconductor device including a polysilicon resistor Grant 11,295,954 - Takaki , et al. April 5, 2 | 2022-04-05 |
Semiconductor device Grant 10,355,127 - Suekawa July 16, 2 | 2019-07-16 |
Semiconductor Device App 20190123195 - SUEKAWA; Eisuke | 2019-04-25 |
Manufacturing Method For Semiconductor Device App 20190115217 - TAKAKI; Yasushi ;   et al. | 2019-04-18 |
Semiconductor device Grant 9,842,906 - Suekawa , et al. December 12, 2 | 2017-12-12 |
Semiconductor device Grant 9,627,383 - Kaguchi , et al. April 18, 2 | 2017-04-18 |
Wide band gap semiconductor device Grant 9,472,543 - Suekawa , et al. October 18, 2 | 2016-10-18 |
Semiconductor Device App 20160163703 - KAGUCHI; Naoto ;   et al. | 2016-06-09 |
Silicon carbide semiconductor device and method of manufacturing the same Grant 9,362,391 - Tarui , et al. June 7, 2 | 2016-06-07 |
Semiconductor Device App 20150243753 - SUEKAWA; Eisuke ;   et al. | 2015-08-27 |
Semiconductor device Grant 9,041,007 - Suekawa , et al. May 26, 2 | 2015-05-26 |
Wide Band Gap Semiconductor Device App 20150008450 - SUEKAWA; Eisuke ;   et al. | 2015-01-08 |
Silicon Carbide Semiconductor Device And Method Of Manufacturing The Same App 20140191251 - Tarui; Yoichiro ;   et al. | 2014-07-10 |
Semiconductor device Grant 8,450,828 - Suekawa May 28, 2 | 2013-05-28 |
Semiconductor Device App 20120132912 - SUEKAWA; Eisuke ;   et al. | 2012-05-31 |
Power semiconductor device Grant 7,888,733 - Suekawa February 15, 2 | 2011-02-15 |
Semiconductor device having insulated gate bipolar transistor Grant 7,808,014 - Suekawa October 5, 2 | 2010-10-05 |
Insulated gate transistor Grant 7,675,113 - Sakamoto , et al. March 9, 2 | 2010-03-09 |
Semiconductor Device App 20100025820 - Suekawa; Eisuke | 2010-02-04 |
Semiconductor device having insulated gate bipolar transistor Grant 7,635,878 - Suekawa December 22, 2 | 2009-12-22 |
Semiconductor device having insulated gate bipolar transistor Grant 7,629,626 - Suekawa December 8, 2 | 2009-12-08 |
Semiconductor Device Having Insulated Gate Bipolar Transistor App 20090283863 - SUEKAWA; Eisuke | 2009-11-19 |
Semiconductor Device Having Insulated Gate Bipolar Transistor App 20090283862 - SUEKAWA; Eisuke | 2009-11-19 |
Insulated Gate Transistor App 20080224207 - SAKAMOTO; Shunsuke ;   et al. | 2008-09-18 |
Power Semiconductor Device App 20080079069 - SUEKAWA; Eisuke | 2008-04-03 |
Insulated gate bipolar transistor Grant 7,250,639 - Suekawa July 31, 2 | 2007-07-31 |
Semiconductor device App 20050253169 - Suekawa, Eisuke | 2005-11-17 |
Semiconductor device including at least one schottky metal layer surrounding PN junction Grant 6,670,688 - Satoh , et al. December 30, 2 | 2003-12-30 |
Semiconductor device App 20030038333 - Satoh, Katsumi ;   et al. | 2003-02-27 |
Semiconductor device App 20020139991 - Matsuo, Kazushige ;   et al. | 2002-10-03 |
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