Stahlbush; Robert E.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Stahlbush; Robert E..The latest application filed is for "uv laser slicing of beta-ga2o3 by micro-crack generation and propagation".

Company Profile

7.15.15

Stahlbush; Robert E. - Silver Spring MD
Stahlbush; Robert E - Silver Spring MD US
Stahlbush; Robert E. - Silverspring MD

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
UV laser slicing of .beta.-Ga.sub.2O.sub.3 by micro-crack generation and propagation Grant 11,171,055 - Mahadik , et al. November 9, 2	2021-11-09
UV Laser slicing of Beta-Ga2O3 by micro-crack generation and propagation App 20200251389 - Kind Code	2020-08-06
Basal plane dislocation elimination in 4H--SiC by pulsed rapid thermal annealing Grant 10,403,509 - Tadjer , et al. Sep	2019-09-03
Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process Grant 10,256,094 - Myers-Ward , et al.	2019-04-09
Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process Grant 10,256,090 - Myers-Ward , et al.	2019-04-09
Removal of basal plane dislocations from silicon carbide substrate surface by high temperature annealing and preserving surface morphology Grant 10,020,366 - Mahadik , et al. July 10, 2	2018-07-10
Removal Of Basal Plane Dislocations From Silicon Carbide Substrate Surface By High Temperature Annealing And Preserving Surface Morphology App 20170092724 - Mahadik; Nadeemullah A. ; et al.	2017-03-30
Reduction of basal plane dislocations in epitaxial SiC Grant 9,464,366 - Myers-Ward , et al. October 11, 2	2016-10-11
Method And Apparatus For Removing Experimental Artifacts From Ensemble Images App 20160056065 - STAHLBUSH; ROBERT E.	2016-02-25
Basal Plane Dislocation Elimination In 4h-sic By Pulsed Rapid Thermal Annealing App 20150287613 - Tadjer; Marko J. ; et al.	2015-10-08
Elimination of basal plane dislocations in post growth silicon carbide epitaxial layers by high temperature annealing while preserving surface morphology Grant 9,129,799 - Mahadik , et al. September 8, 2	2015-09-08
Elimination Of Basal Plane Dislocations In Post Growth Silicon Carbide Epitaxial Layers By High Temperature Annealing While Preserving Surface Morphology App 20150155166 - Mahadik; Nadeemullah A. ; et al.	2015-06-04
REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-SITU ETCH PROCESS App 20140193965 - Myers-Ward; Rachael L. ; et al.	2014-07-10
REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-SITU ETCH PROCESS App 20140190399 - Myers-Ward; Rachael L. ; et al.	2014-07-10
Method of producing epitaxial layers with low basal plane dislocation concentrations Grant 8,652,255 - Stahlbush , et al. February 18, 2	2014-02-18
Method of mediating forward voltage drift in a SiC device Grant 7,915,143 - Caldwell , et al. March 29, 2	2011-03-29
Reduction Of Basal Plane Dislocations In Epitaxial Sic App 20110045281 - Myers-Ward; Rachael L. ; et al.	2011-02-24
Method Of Mediating Forward Voltage Drift In A Sic Device App 20090273390 - CALDWELL; JOSHUA D. ; et al.	2009-11-05
Method Of Producing Epitaxial Layers With Low Basal Plane Dislocation Concentrations App 20090114148 - Stahlbush; Robert E. ; et al.	2009-05-07

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