| Patent | Date |
|---|
Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate
Grant 11,453,956 - D'Evelyn , et al. September 27, 2 | 2022-09-27 |
III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers
Grant 11,411,137 - Mughal , et al. August 9, 2 | 2022-08-09 |
Hybrid Growth Method For Iii-nitride Tunnel Junction Devices
App 20220181513 - Young; Erin C. ; et al. | 2022-06-09 |
Contact architectures for tunnel junction devices
Grant 11,348,908 - Yonkee , et al. May 31, 2 | 2022-05-31 |
Metal Organic Chemical Vapor Depostion (mocvd) Tunnel Junction Growth In Iii-nitride Devices
App 20220029049 - Alhassan; Abdullah Ibrahim ; et al. | 2022-01-27 |
Hybrid growth method for III-nitride tunnel junction devices
Grant 11,217,722 - Young , et al. January 4, 2 | 2022-01-04 |
III-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent
Grant 11,164,997 - Yonkee , et al. November 2, 2 | 2021-11-02 |
Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nitride devices
Grant 11,158,760 - Alhassan , et al. October 26, 2 | 2021-10-26 |
Methods for fabricating III-nitride tunnel junction devices
Grant 10,985,285 - Yonkee , et al. April 20, 2 | 2021-04-20 |
Contact Architectures For Tunnel Junction Devices
App 20210104504 - Yonkee; Benjamin P. ; et al. | 2021-04-08 |
Iii-nitride Light Emitting Diodes With Tunnel Junctions Wafer Bonded To A Conductive Oxide And Having Optically Pumped Layers
App 20200335663 - Mughal; Asad J. ; et al. | 2020-10-22 |
Iii-nitride Surface-emitting Laser And Method Of Fabrication
App 20200244036 - Forman; Charles ; et al. | 2020-07-30 |
Method For Processing Of Semiconductor Films With Reduced Evaporation And Degradation
App 20200243334 - Zollner; Christian J. ; et al. | 2020-07-30 |
III-nitride tunnel junction with modified P-N interface
Grant 10,685,835 - Yonkee , et al. | 2020-06-16 |
Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substr
App 20200087813 - D'Evelyn; Mark P. ; et al. | 2020-03-19 |
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
Grant 10,529,892 - Farrell, Jr. , et al. J | 2020-01-07 |
Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate
Grant 10,400,352 - D'Evelyn , et al. Sep | 2019-09-03 |
Metal Organic Chemical Vapor Depostion (mocvd) Tunnel Junction Growth In Iii-nitride Devices
App 20190245112 - Alhassan; Abdullah Ibrahim ; et al. | 2019-08-08 |
Methods For Fabricating Iii-nitride Tunnel Junction Devices
App 20190207043 - Yonkee; Benjamin P. ; et al. | 2019-07-04 |
Iii-nitride Tunnel Junction Light Emitting Diode With Wall Plug Efficiency Of Over Seventy Percent
App 20190165213 - Yonkee; Benjamin P. ; et al. | 2019-05-30 |
Light emitting device for AC power operation
Grant 10,292,220 - Lee , et al. | 2019-05-14 |
Hybrid Growth Method For Iii-nitride Tunnel Junction Devices
App 20190074404 - Young; Erin C. ; et al. | 2019-03-07 |
Iii-nitride Tunnel Junction With Modified P-n Interface
App 20180374699 - Yonkee; Benjamin P. ; et al. | 2018-12-27 |
Method for synthesis of high quality large area bulk gallium based crystals
Grant 10,100,425 - D'Evelyn , et al. October 16, 2 | 2018-10-16 |
Semi-polar Iii-nitride Optoelectronic Devices On M-plane Substrates With Miscuts Less Than +/- 15 Degrees In The C-direction
App 20180152004 - Hsu; Po Shan ; et al. | 2018-05-31 |
Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/- 15 degrees in the C-direction
Grant 9,917,422 - Hsu , et al. March 13, 2 | 2018-03-13 |
TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES
App 20180013035 - Farrell, JR.; Robert M. ; et al. | 2018-01-11 |
Planar nonpolar group-III nitride films grown on miscut substrates
Grant 9,828,695 - Hirai , et al. November 28, 2 | 2017-11-28 |
Planar Nonpolar Group Iii-nitride Films Grown On Miscut Substrates
App 20170327969 - Iso; Kenji ; et al. | 2017-11-16 |
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
Grant 9,793,435 - Farrell, Jr. , et al. October 17, 2 | 2017-10-17 |
Iii-v Micro-led Arrays And Methods For Preparing The Same
App 20170236807 - Hwang; David ; et al. | 2017-08-17 |
Method of controlling stress in group-III nitride films deposited on substrates
Grant 9,691,712 - Marchand , et al. June 27, 2 | 2017-06-27 |
Large Area Nitride Crystal And Method For Making It
App 20170145585 - D'Evelyn; Mark P. ; et al. | 2017-05-25 |
Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser
Grant 9,640,947 - Holder , et al. May 2, 2 | 2017-05-02 |
White light source employing a III-nitride based laser diode pumping a phosphor
Grant 9,611,987 - Kelchner , et al. April 4, 2 | 2017-04-04 |
Large area nitride crystal and method for making it
Grant 9,564,320 - D'Evelyn , et al. February 7, 2 | 2017-02-07 |
Light Emitting Device For Ac Power Operation
App 20160345398 - Lee; Chung Hoon ; et al. | 2016-11-24 |
Planar Nonpolar Group-iii Nitride Films Grown On Miscut Substrates
App 20160230312 - Hirai; Asako ; et al. | 2016-08-11 |
Reactor Vessels For Ammonothermal And Flux-based Growth Of Group-iii Nitride Crystals
App 20160194781 - Pimputkar; Siddha ; et al. | 2016-07-07 |
Structure And Method For The Fabrication Of A Gallium Nitride Vertical Cavity Surface Emitting Laser
App 20160156155 - Holder; Casey O. ; et al. | 2016-06-02 |
High power blue-violet III-nitride semipolar laser diodes
Grant 9,356,431 - Pourhashemi , et al. May 31, 2 | 2016-05-31 |
Planar nonpolar group-III nitride films grown on miscut substrates
Grant 9,340,899 - Hirai , et al. May 17, 2 | 2016-05-17 |
TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES
App 20160079738 - Farrell; Robert M. ; et al. | 2016-03-17 |
Method For Synthesis Of High Quality Large Area Bulk Gallium Based Crystals
App 20160053400 - D'EVELYN; MARK P. ; et al. | 2016-02-25 |
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
Grant 9,231,376 - Farrell, Jr. , et al. January 5, 2 | 2016-01-05 |
High Power Blue-violet Iii-nitride Semipolar Laser Diodes
App 20150372456 - Pourhashemi; Arash ; et al. | 2015-12-24 |
Method for synthesis of high quality large area bulk gallium based crystals
Grant 9,175,418 - D'Evelyn , et al. November 3, 2 | 2015-11-03 |
Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface
Grant 9,159,553 - Ohta , et al. October 13, 2 | 2015-10-13 |
Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser
Grant 9,136,673 - Holder , et al. September 15, 2 | 2015-09-15 |
Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other
Grant 9,133,564 - Pimputkar , et al. September 15, 2 | 2015-09-15 |
Semi-polar Iii-nitride Optoelectronic Devices On M-plane Substrates With Miscuts Less Than +/- 15 Degrees In The C-direction
App 20150255959 - Hsu; Po Shan ; et al. | 2015-09-10 |
Method of controlling stress in group-III nitride films deposited on substrates
Grant 9,129,977 - Marchand , et al. September 8, 2 | 2015-09-08 |
Non-polar and semi-polar light emitting devices
Grant 9,130,119 - DenBaars , et al. September 8, 2 | 2015-09-08 |
Light Emitting Device For Ac Power Operation
App 20150195872 - Lee; Chung Hoon ; et al. | 2015-07-09 |
High light extraction efficiency nitride based light emitting diode by surface roughening
Grant 9,040,326 - Zhong , et al. May 26, 2 | 2015-05-26 |
Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes
Grant 9,040,327 - Feezell , et al. May 26, 2 | 2015-05-26 |
Light emitting device for AC power operation
Grant 9,030,110 - Lee , et al. May 12, 2 | 2015-05-12 |
(Al, In, Ga, B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE
App 20150115220 - Iza; Michael ; et al. | 2015-04-30 |
Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
Grant 8,956,896 - Schmidt , et al. February 17, 2 | 2015-02-17 |
Anisotropic Strain Control In Semipolar Nitride Quantum Wells By Partially Or Fully Relaxed Aluminum Indium Gallium Nitride Layers With Misfit Dislocations
App 20140376584 - Ohta; Hiroaki ; et al. | 2014-12-25 |
Method Of Controlling Stress In Group-iii Nitride Films Deposited On Substrates
App 20140367698 - Marchand; Hugues ; et al. | 2014-12-18 |
High Light Extraction Efficiency Nitride Based Light Emitting Diode By Surface Roughening
App 20140346542 - Zhong; Hong ; et al. | 2014-11-27 |
Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition
Grant 8,882,935 - Chakraborty , et al. November 11, 2 | 2014-11-11 |
Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations
Grant 8,866,126 - Ohta , et al. October 21, 2 | 2014-10-21 |
Light emitting device for AC power operation
Grant 8,866,417 - Lee , et al. October 21, 2 | 2014-10-21 |
METHOD OF IMPROVING SURFACE MORPHOLOGY OF (Ga,Al,In,B)N THIN FILMS AND DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES
App 20140308769 - Farrell; Robert M. ; et al. | 2014-10-16 |
Light emitting device for AC power operation
Grant 8,860,331 - Lee , et al. October 14, 2 | 2014-10-14 |
Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning
Grant 8,853,669 - Speck , et al. October 7, 2 | 2014-10-07 |
Planar Nonpolar Group-iii Nitride Films Grown On Miscut Substrates
App 20140291694 - Hirai; Asako ; et al. | 2014-10-02 |
High light extraction efficiency nitride based light emitting diode by surface roughening
Grant 8,835,200 - Zhong , et al. September 16, 2 | 2014-09-16 |
Dislocation reduction in non-polar III-nitride thin films
Grant 8,809,867 - Craven , et al. August 19, 2 | 2014-08-19 |
Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)
Grant 8,795,440 - Imer , et al. August 5, 2 | 2014-08-05 |
Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates
Grant 8,795,430 - Farrell , et al. August 5, 2 | 2014-08-05 |
TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES
App 20140211820 - Farrell, JR.; Robert M. ; et al. | 2014-07-31 |
Planar nonpolar group-III nitride films grown on miscut substrates
Grant 8,791,000 - Hirai , et al. July 29, 2 | 2014-07-29 |
Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N
Grant 8,772,758 - Hardy , et al. July 8, 2 | 2014-07-08 |
Miscut Semipolar Optoelectronic Device
App 20140183579 - Kaeding; John F. ; et al. | 2014-07-03 |
Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes
Grant 8,761,218 - Lin , et al. June 24, 2 | 2014-06-24 |
Pec Etching Of (20-2-1) Semipolar Gallium Nitride For External Efficiency Enhancement In Light Emitting Diode Applications
App 20140167059 - Hsu; Chung-Ta ; et al. | 2014-06-19 |
Planar Nonpolar Group-iii Nitride Films Grown On Miscut Substrates
App 20140138679 - Hirai; Asako ; et al. | 2014-05-22 |
Method for increasing the area of non-polar and semi-polar nitride substrates
Grant 8,729,671 - Hirai , et al. May 20, 2 | 2014-05-20 |
White Light Source Employing A Iii-nitride Based Laser Diode Pumping A Phosphor
App 20140126200 - Kelchner; Kathryn M. ; et al. | 2014-05-08 |
Light emitting device for AC power operation
Grant 8,716,946 - Lee , et al. May 6, 2 | 2014-05-06 |
Reactor Designs For Use In Ammonothermal Growth Of Group-iii Nitride Crystals
App 20140116326 - Pimputkar; Siddha ; et al. | 2014-05-01 |
Planar nonpolar group-III nitride films grown on miscut substrates
Grant 8,691,671 - Hirai , et al. April 8, 2 | 2014-04-08 |
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
Grant 8,686,466 - Farrell, Jr. , et al. April 1, 2 | 2014-04-01 |
Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys
Grant 8,653,503 - Chung , et al. February 18, 2 | 2014-02-18 |
Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same
Grant 8,647,967 - Saito , et al. February 11, 2 | 2014-02-11 |
Reactor designs for use in ammonothermal growth of group-III nitride crystals
Grant 8,641,823 - Pimputkar , et al. February 4, 2 | 2014-02-04 |
In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N
Grant 8,643,024 - Chakraborty , et al. February 4, 2 | 2014-02-04 |
Light Emitting Device For Ac Power Operation
App 20140028204 - LEE; Chung Hoon ; et al. | 2014-01-30 |
Structure And Method For The Fabrication Of A Gallium Nitride Vertical Cavity Surface Emitting Laser
App 20140023102 - Holder; Casey O. ; et al. | 2014-01-23 |
Using Boron-containing Compounds, Gasses And Fluids During Ammonothermal Growth Of Group-iii Nitride Crystals
App 20130340672 - Pimputkar; Siddha ; et al. | 2013-12-26 |
Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers
Grant 8,588,260 - Farrell , et al. November 19, 2 | 2013-11-19 |
Light-emitting Diodes With Low Temperature Dependence
App 20130299777 - Nakamura; Shuji ; et al. | 2013-11-14 |
High Output Power, High Efficiency Blue Light-emitting Diodes
App 20130299776 - Nakamura; Shuji ; et al. | 2013-11-14 |
Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals
Grant 8,574,525 - Pimputkar , et al. November 5, 2 | 2013-11-05 |
Photoelectrochemical etching for chip shaping of light emitting diodes
Grant 8,569,085 - Tamboli , et al. October 29, 2 | 2013-10-29 |
Fabrication Of Nonpolar Indium Gallium Nitride Thin Films, Heterostructures, And Devices By Metalorganic Chemical Vapor Deposition
App 20130264540 - Chakraborty; Arpan ; et al. | 2013-10-10 |
Apparatus Used For The Growth Of Group-iii Nitride Crystals Utilizing Carbon Fiber Containing Materials And Group-iii Nitride Grown Therewith
App 20130263775 - Pimputkar; Siddha ; et al. | 2013-10-10 |
Anisotropic Strain Control In Semipolar Nitride Quantum Wells By Partially Or Fully Relaxed Aluminum Indium Gallium Nitride Layers With Misfit Dislocations
App 20130259080 - Ohta; Hiroaki ; et al. | 2013-10-03 |
Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates
Grant 8,541,869 - Nakamura , et al. September 24, 2 | 2013-09-24 |
Technique for the growth of planar semi-polar gallium nitride
Grant 8,524,012 - Baker , et al. September 3, 2 | 2013-09-03 |
Field-effect transistor with compositionally graded nitride layer on a silicaon substrate
Grant 8,525,230 - Marchand , et al. September 3, 2 | 2013-09-03 |
Method For Producing Gallium Nitride Substrates For Electronic And Optoelectronic Devices
App 20130207237 - Weisbuch; Claude C.A. ; et al. | 2013-08-15 |
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
Grant 8,502,246 - Chakraborty , et al. August 6, 2 | 2013-08-06 |
Crystal Growth Using Non-thermal Atmospheric Pressure Plasmas
App 20130183225 - Von Dollen; Paul ; et al. | 2013-07-18 |
Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations
Grant 8,481,991 - Ohta , et al. July 9, 2 | 2013-07-09 |
Light Emitting Device For Ac Power Operation
App 20130169174 - LEE; Chung Hoon ; et al. | 2013-07-04 |
Method of forming p-type compound semiconductor layer
Grant 8,470,697 - Nam , et al. June 25, 2 | 2013-06-25 |
Ammonothermal method for growth of bulk gallium nitride
Grant 8,465,588 - Poblenz , et al. June 18, 2 | 2013-06-18 |
Growth of planar, non-polar, group-III nitride films
Grant 8,450,192 - Haskell , et al. May 28, 2 | 2013-05-28 |
Optoelectronic Device Based On Non-polar And Semi-polar Aluminum Indium Nitride And Aluminum Indium Gallium Nitride Alloys
App 20130126828 - Chung; Roy B. ; et al. | 2013-05-23 |
Large Area Nitride Crystal And Method For Making It
App 20130119401 - D'EVELYN; Mark P. ; et al. | 2013-05-16 |
Use Of Alkaline-earth Metals To Reduce Impurity Incorporation Into A Group-iii Nitride Crystal Grown Using The Ammonothermal Method
App 20130099180 - Pimputkar; Siddha ; et al. | 2013-04-25 |
SELECTIVE DRY ETCHING OF N-FACE (Al,In,Ga)N HETEROSTRUCTURES
App 20130099277 - Speck; James S. ; et al. | 2013-04-25 |
Light Emitting Diode With Conformal Surface Electrical Contacts With Glass Encapsulation
App 20130069088 - Speck; James S. ; et al. | 2013-03-21 |
Light emitting device for AC power operation
Grant 8,395,332 - Lee , et al. March 12, 2 | 2013-03-12 |
Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate
Grant 8,390,011 - Weisbuch , et al. March 5, 2 | 2013-03-05 |
Miscut semipolar optoelectronic device
Grant 8,368,179 - Kaeding , et al. February 5, 2 | 2013-02-05 |
Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys
Grant 8,357,925 - Chung , et al. January 22, 2 | 2013-01-22 |
Growth Of Bulk Group-iii Nitride Crystals After Coating Them With A Group-iii Metal And An Alkali Metal
App 20130015560 - Pimputkar; Siddha ; et al. | 2013-01-17 |
SUPPRESSION OF INCLINED DEFECT FORMATION AND INCREASE IN CRITICAL THICKNESS BY SILICON DOPING ON NON-C-PLANE (Al,Ga,In)N
App 20120286241 - Hardy; Matthew T. ; et al. | 2012-11-15 |
High Indium Uptake And High Polarization Ratio For Group-iii Nitride Optoelectronic Devices Fabricated On A Semipolar (20-2-1) Plane Of A Gallium Nitride Substrate
App 20120273796 - Zhao; Yuji ; et al. | 2012-11-01 |
Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
Grant 8,299,452 - Sato , et al. October 30, 2 | 2012-10-30 |
Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES
App 20120256158 - Feezell; Daniel F. ; et al. | 2012-10-11 |
Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut
Grant 8,278,128 - Masui , et al. October 2, 2 | 2012-10-02 |
Light Emitting Device For Ac Power Operation
App 20120217885 - LEE; Chung Hoon ; et al. | 2012-08-30 |
METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES
App 20120205620 - Sato; Hitoshi ; et al. | 2012-08-16 |
Metalorganic Chemical Vapor Deposition (mocvd) Growth Of High Performance Non-polar Iii-nitride Optical Devices
App 20120199809 - Schmidt; Mathew C. ; et al. | 2012-08-09 |
Iii-nitride Flip-chip Solar Cells
App 20120180868 - Farrell; Robert M. ; et al. | 2012-07-19 |
Planar Nonpolar Group-iii Nitride Films Grown On Miscut Substrates
App 20120175739 - HIRAI; Asako ; et al. | 2012-07-12 |
Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes
Grant 8,211,723 - Feezell , et al. July 3, 2 | 2012-07-03 |
Ammonothermal Growth Of Group-iii Nitride Crystals On Seeds With At Least Two Surfaces Making An Acute, Right Or Obtuse Angle With Each Other
App 20120164386 - Pimputkar; Siddha ; et al. | 2012-06-28 |
Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices
Grant 8,203,159 - Zhong , et al. June 19, 2 | 2012-06-19 |
METHOD FOR REDUCTION OF EFFICIENCY DROOP USING AN (Al,In,Ga)N/Al(x)In(1-x)N SUPERLATTICE ELECTRON BLOCKING LAYER IN NITRIDE BASED LIGHT EMITTING DIODES
App 20120138891 - Chung; Roy B. ; et al. | 2012-06-07 |
Method For Fabrication Of (al,in,ga) Nitride Based Vertical Light Emitting Diodes With Enhanced Current Spreading Of N-type Electrode
App 20120138986 - CHUNG; ROY B. ; et al. | 2012-06-07 |
Light emitting device for AC power operation
Grant 8,188,687 - Lee , et al. May 29, 2 | 2012-05-29 |
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
Grant 8,188,458 - Craven , et al. May 29, 2 | 2012-05-29 |
Technique For The Growth Of Planar Semi-polar Gallium Nitride
App 20120119222 - Baker; Troy J. ; et al. | 2012-05-17 |
Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
Grant 8,178,373 - Schmidt , et al. May 15, 2 | 2012-05-15 |
High Light Extraction Efficiency Nitride Based Light Emitting Diode By Surface Roughening
App 20120104412 - Zhong; Hong ; et al. | 2012-05-03 |
Strain Compensated Short-period Superlattices On Semipolar Or Nonpolar Gan For Defect Reduction And Stress Engineering
App 20120104360 - Hardy; Matthew T. ; et al. | 2012-05-03 |
Textured Iii-v Semiconductor
App 20120104411 - Iza; Michael ; et al. | 2012-05-03 |
Magnesium Doping In Barriers In Multiple Quantum Well Structures Of Iii-nitride-based Light Emitting Devices
App 20120107991 - Huang; Chia-Yen ; et al. | 2012-05-03 |
Defect Reduction Of Non-polar And Semi-polar Iii-nitrides With Sidewall Lateral Epitaxial Overgrowth (sleo)
App 20120098102 - Imer; Bilge M. ; et al. | 2012-04-26 |
Vicinal Semipolar Iii-nitride Substrates To Compensate Tilt Of Relaxed Hetero-epitaxial Layers
App 20120100650 - Speck; James S. ; et al. | 2012-04-26 |
Limiting Strain Relaxation In Iii-nitride Hetero-structures By Substrate And Epitaxial Layer Patterning
App 20120097919 - Speck; James S. ; et al. | 2012-04-26 |
IN-SITU DEFECT REDUCTION TECHNIQUES FOR NONPOLAR AND SEMIPOLAR (Al, Ga, In)N
App 20120091467 - Chakraborty; Arpan ; et al. | 2012-04-19 |
Planar nonpolar m-plane group III nitride films grown on miscut substrates
Grant 8,158,497 - Hirai , et al. April 17, 2 | 2012-04-17 |
Method For Increasing The Area Of Non-polar And Semi-polar Nitride Substrates
App 20120086106 - Hirai; Asako ; et al. | 2012-04-12 |
Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
Grant 8,148,713 - Sato , et al. April 3, 2 | 2012-04-03 |
Lateral growth method for defect reduction of semipolar nitride films
Grant 8,148,244 - Baker , et al. April 3, 2 | 2012-04-03 |
Miscut Semipolar Optoelectronic Device
App 20120074525 - Kaeding; John F. ; et al. | 2012-03-29 |
Growth Of Reduced Dislocation Density Non-polar Gallium Nitride
App 20120074425 - Haskell; Benjamin A. ; et al. | 2012-03-29 |
Growth Of Non-polar M-plane Iii-nitride Film Using Metalorganic Chemical Vapor Deposition (mocvd)
App 20120074429 - Imer; Bilge M. ; et al. | 2012-03-29 |
Lateral Growth Method For Defect Reduction Of Semipolar Nitride Films
App 20120074524 - Baker; Troy J. ; et al. | 2012-03-29 |
Method Of Controlling Stress In Group-iii Nitride Films Deposited On Substrates
App 20120068191 - Marchand; Hugues ; et al. | 2012-03-22 |
CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES
App 20120068192 - Kim; Kwang C. ; et al. | 2012-03-22 |
Dislocation Reduction In Non-polar Iii-nitride Thin Films
App 20120068184 - Craven; Michael D. ; et al. | 2012-03-22 |
Group-iii Nitride Crystal Ammonothermally Grown Using An Initially Off-oriented Non-polar Or Semi-polar Growth Surface Of A Group-iii Nitride Seed Crystal
App 20120063987 - Pimputkar; Siddha ; et al. | 2012-03-15 |
Optoelectronic Device Based On Non-polar And Semi-polar Aluminum Indium Nitride And Aluminum Indium Gallium Nitride Alloys
App 20120061645 - Chung; Roy B. ; et al. | 2012-03-15 |
Technique for the growth of planar semi-polar gallium nitride
Grant 8,128,756 - Baker , et al. March 6, 2 | 2012-03-06 |
Enhancement Of Optical Polarization Of Nitride Light-emitting Diodes By Increased Indium Incorporation
App 20120049158 - MASUI; HISASHI ; et al. | 2012-03-01 |
Thin P-type Gallium Nitride And Aluminum Gallium Nitride Electron-blocking Layer Free Gallium Nitride-based Light Emitting Diodes
App 20120037884 - ZHONG; HONG ; et al. | 2012-02-16 |
High light extraction efficiency nitride based light emitting diode by surface roughening
Grant 8,114,698 - Zhong , et al. February 14, 2 | 2012-02-14 |
Miscut semipolar optoelectronic device
Grant 8,110,482 - Kaeding , et al. February 7, 2 | 2012-02-07 |
In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N
Grant 8,105,919 - Chakraborty , et al. January 31, 2 | 2012-01-31 |
Light Emitting Devices With Embedded Void-gap Structures Through Bonding Of Structured Materials On Active Devices
App 20120018755 - Speck; James S. ; et al. | 2012-01-26 |
Optoelectronic Devices With Embedded Void Structures
App 20120018758 - Matioli; Elison de Nazareth ; et al. | 2012-01-26 |
Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)
Grant 8,097,481 - Imer , et al. January 17, 2 | 2012-01-17 |
Large Area Nitride Crystal and Method for Making It
App 20120000415 - D'Evelyn; Mark P. ; et al. | 2012-01-05 |
Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys
Grant 8,084,763 - Chung , et al. December 27, 2 | 2011-12-27 |
Method for increasing the area of non-polar and semi-polar nitride substrates
Grant 8,080,469 - Hirai , et al. December 20, 2 | 2011-12-20 |
Group-iii Nitride Monocrystal With Improved Purity And Method Of Producing The Same
App 20110300051 - Kamber; Derrick S. ; et al. | 2011-12-08 |
Growth Of Reduced Dislocation Density Non-polar Gallium Nitride
App 20110278585 - Haskell; Benjamin A. ; et al. | 2011-11-17 |
Ammonothermal Method for Growth of Bulk Gallium Nitride
App 20110262773 - Poblenz; Christiane ; et al. | 2011-10-27 |
Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes
Grant 8,044,383 - Zhong , et al. October 25, 2 | 2011-10-25 |
Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation
Grant 8,044,417 - Masui , et al. October 25, 2 | 2011-10-25 |
Method for Synthesis of High Quality Large Area Bulk Gallium Based Crystals
App 20110256693 - D`Evelyn; Mark P. ; et al. | 2011-10-20 |
Aluminum Gallium Nitride Barriers And Separate Confinement Heterostructure (sch) Layers For Semipolar Plane Iii-nitride Semiconductor-based Light Emitting Diodes And Laser Diodes
App 20110243172 - Lin; You-Da ; et al. | 2011-10-06 |
Planar Nonpolar Group Iii-nitride Films Grown On Miscut Substrates
App 20110237054 - Iso; Kenji ; et al. | 2011-09-29 |
Using Boron-containing Compounds, Gasses And Fluids During Ammonothermal Growth Of Group-iii Nitride Crystals
App 20110223092 - Pimputkar; Siddha ; et al. | 2011-09-15 |
Reactor Designs For Use In Ammonothermal Growth Of Group-iii Nitride Crystals
App 20110220013 - Pimputkar; Siddha ; et al. | 2011-09-15 |
Controlling Relative Growth Rates Of Different Exposed Crystallographic Facets Of A Group-iii Nitride Crystal During The Ammonothermal Growth Of A Group-iii Nitride Crystal
App 20110209659 - Pimputkar; Siddha ; et al. | 2011-09-01 |
Addition Of Hydrogen And/or Nitrogen Containing Compounds To The Nitrogen-containing Solvent Used During The Ammonothermal Growth Of Group-iii Nitride Crystals
App 20110212013 - Pimputkar; Siddha ; et al. | 2011-09-01 |
Novel Vessel Designs And Relative Placements Of The Source Material And Seed Crystals With Respect To The Vessel For The Ammonothermal Growth Of Group-iii Nitride Crystals
App 20110203514 - Pimputkar; Siddha ; et al. | 2011-08-25 |
Semipolar Iii-nitride Laser Diodes With Etched Mirrors
App 20110170569 - Tyagi; Anurag ; et al. | 2011-07-14 |
Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
Grant 7,976,630 - Poblenz , et al. July 12, 2 | 2011-07-12 |
Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
Grant 7,955,983 - Imer , et al. June 7, 2 | 2011-06-07 |
High efficiency light emitting diode (LED)
Grant 7,956,371 - DenBaars , et al. June 7, 2 | 2011-06-07 |
N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor
Grant 7,948,011 - Rajan , et al. May 24, 2 | 2011-05-24 |
Method Of Controlling Stress In Group-iii Nitride Films Deposited On Substrates
App 20110108886 - Marchand; Hugues ; et al. | 2011-05-12 |
Superluminescent Diodes By Crystallographic Etching
App 20110103418 - Hardy; Matthew T. ; et al. | 2011-05-05 |
Semipolar Nitride-based Devices On Partially Or Fully Relaxed Alloys With Misfit Dislocations At The Heterointerface
App 20110064103 - Ohta; Hiroaki ; et al. | 2011-03-17 |
Technique For The Growth And Fabrication Of Semipolar (ga,al,in,b)n Thin Films, Heterostructures, And Devices
App 20110062449 - Farrell, JR.; Robert M. ; et al. | 2011-03-17 |
Anisotropic Strain Control In Semipolar Nitride Quantum Wells By Partially Or Fully Relaxed Aluminum Indium Gallium Nitride Layers With Misfit Dislocations
App 20110062415 - Ohta; Hiroaki ; et al. | 2011-03-17 |
STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga,Al,In,B)N LASER DIODES
App 20110044364 - Farrell; Robert M. ; et al. | 2011-02-24 |
Metalorganic Chemical Vapor Deposition (mocvd) Growth Of High Performance Non-polar Iii-nitride Optical Devices
App 20110037052 - Schmidt; Mathew C. ; et al. | 2011-02-17 |
Thin P-type Gallium Nitride And Aluminum Gallium Nitride Electron-blocking Layer Free Gallium Nitride-based Light Emitting Diodes
App 20110037085 - Zhong; Hong ; et al. | 2011-02-17 |
Light Emitting Device For Ac Power Operation
App 20110031891 - LEE; Chung Hoon ; et al. | 2011-02-10 |
OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (Ga,Al,In,B)N DIODE LASERS
App 20110032965 - Farrell; Robert M. ; et al. | 2011-02-10 |
Light emitting device having a plurality of light emitting cells and method of fabricating the same
Grant 7,880,183 - Lee , et al. February 1, 2 | 2011-02-01 |
Method For Growth Of Semipolar (al,in,ga,b)n Optoelectronic Devices
App 20110012234 - Zhong; Hong ; et al. | 2011-01-20 |
STRUCTURE FOR IMPROVING THE MIRROR FACET CLEAVING YIELD OF (Ga,Al,In,B)N LASER DIODES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES
App 20110007766 - Farrell; Robert M. ; et al. | 2011-01-13 |
Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices
Grant 7,858,996 - Zhong , et al. December 28, 2 | 2010-12-28 |
ETCHING TECHNIQUE FOR THE FABRICATION OF THIN (Al, In, Ga)N LAYERS
App 20100320475 - Speck; James S. ; et al. | 2010-12-23 |
Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
Grant 7,846,757 - Farrell, Jr. , et al. December 7, 2 | 2010-12-07 |
Growth of reduced dislocation density non-polar gallium nitride
Grant 7,847,293 - Haskell , et al. December 7, 2 | 2010-12-07 |
Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
Grant 7,842,527 - Schmidt , et al. November 30, 2 | 2010-11-30 |
Single Or Multi-color High Efficiency Light Emitting Diode (led) By Growth Over A Patterned Substrate
App 20100295081 - Weisbuch; Claude C. A. ; et al. | 2010-11-25 |
Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers
Grant 7,839,903 - Farrell , et al. November 23, 2 | 2010-11-23 |
Transparent Mirrorless Light Emitting Diode
App 20100283078 - DenBaars; Steven P. ; et al. | 2010-11-11 |
Light Emitting Device For Ac Power Operation
App 20100277084 - LEE; Chung Hoon ; et al. | 2010-11-04 |
N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor
App 20100264461 - Rajan; Siddharth ; et al. | 2010-10-21 |
Etching technique for the fabrication of thin (Al, In, Ga)N layers
Grant 7,795,146 - Speck , et al. September 14, 2 | 2010-09-14 |
Method Of Improving Surface Morphology Of (ga,al,in,b)n Thin Films And Devices Grown On Nonpolar Or Semipolar (ga,al,in,b)n Substrates
App 20100219416 - Farrell; Robert M. ; et al. | 2010-09-02 |
Light Emitting Device Having A Plurality Of Light Emitting Cells And Method Of Fabricating The Same
App 20100213468 - Lee; Chung Hoon ; et al. | 2010-08-26 |
Transparent mirrorless light emitting diode
Grant 7,781,789 - DenBaars , et al. August 24, 2 | 2010-08-24 |
Light emitting device having a plurality of light emitting cells and method of fabricating the same
Grant 7,772,601 - Lee , et al. August 10, 2 | 2010-08-10 |
Light emitting device having a plurality of light emitting cells and method of fabricating the same
Grant 7,772,602 - Lee , et al. August 10, 2 | 2010-08-10 |
IN-SITU DEFECT REDUCTION TECHNIQUES FOR NONPOLAR AND SEMIPOLAR (Al, Ga, In)N
App 20100193911 - Chakraborty; Arpan ; et al. | 2010-08-05 |
Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate
Grant 7,755,096 - Weisbuch , et al. July 13, 2 | 2010-07-13 |
Method For Improved Growth Of Semipolar (al,in,ga,b)n
App 20100148195 - Kaeding; John F. ; et al. | 2010-06-17 |
Technique For The Growth Of Planar Semi-polar Gallium Nitride
App 20100133663 - Baker; Troy J. ; et al. | 2010-06-03 |
Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate
Grant 7,723,745 - Weisbuch , et al. May 25, 2 | 2010-05-25 |
In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N
Grant 7,723,216 - Chakraborty , et al. May 25, 2 | 2010-05-25 |
Group-iii Nitride Monocrystal With Improved Crystal Quality Grown On An Etched-back Seed Crystal And Method Of Producing The Same
App 20100111808 - Pimputkar; Siddha ; et al. | 2010-05-06 |
Optoelectronic Device Based On Non-polar And Semi-polar Aluminum Indium Nitride And Aluminum Indium Gallium Nitride Alloys
App 20100108985 - Chung; Roy B. ; et al. | 2010-05-06 |
Technique for the growth of planar semi-polar gallium nitride
Grant 7,704,331 - Baker , et al. April 27, 2 | 2010-04-27 |
Photoelectrochemical Etching For Chip Shaping Of Light Emitting Diodes
App 20100090240 - Tamboli; Adele ; et al. | 2010-04-15 |
Method for improved growth of semipolar (Al,In,Ga,B)N
Grant 7,691,658 - Kaeding , et al. April 6, 2 | 2010-04-06 |
Hexagonal Wurtzite Single Crystal And Hexagonal Wurtzite Single Crystal Substrate
App 20100075107 - Saito; Makoto ; et al. | 2010-03-25 |
Large-area Seed For Ammonothermal Growth Of Bulk Gallium Nitride And Method Of Manufacture
App 20100075175 - POBLENZ; CHRISTIANE ; et al. | 2010-03-25 |
Method of forming p-type compound semiconductor layer
Grant 7,682,953 - Nam , et al. March 23, 2 | 2010-03-23 |
Growth And Manufacture Of Reduced Dislocation Density And Free-standing Aluminum Nitride Films By Hydride Vapor Phase Epitaxy
App 20100065854 - Kamber; Derrick S. ; et al. | 2010-03-18 |
Enhancement Of Optical Polarization Of Nitride Light-emitting Diodes By Wafer Off-axis Cut
App 20100052008 - Masui; Hisashi ; et al. | 2010-03-04 |
Method Of Forming P-type Compound Semiconductor Layer
App 20100003810 - NAM; Ki Bum ; et al. | 2010-01-07 |
Heater Device And Method For High Pressure Processing Of Crystalline Materials
App 20090320745 - D'Evelyn; Mark P. ; et al. | 2009-12-31 |
MOCVD GROWTH TECHNIQUE FOR PLANAR SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES
App 20090310640 - Sato; Hitoshi ; et al. | 2009-12-17 |
Hexagonal Wurtzite Type Epitaxial Layer Possessing A Low Alkali-metal Concentration And Method Of Creating The Same
App 20090294775 - Saito; Makoto ; et al. | 2009-12-03 |
METHOD FOR FABRICATION OF SEMIPOLAR (Al, In, Ga, B)N BASED LIGHT EMITTING DIODES
App 20090250686 - Sato; Hitoshi ; et al. | 2009-10-08 |
Enhancement Of Optical Polarization Of Nitride Light-emitting Diodes By Increased Indium Incorporation
App 20090194761 - Masui; Hisashi ; et al. | 2009-08-06 |
Light Emitting Device Having A Plurality Of Light Emitting Cells And Method Of Fabricating The Same
App 20090189166 - LEE; Chung Hoon ; et al. | 2009-07-30 |
Method Of Forming P-type Compound Semiconductor Layer
App 20090163002 - Nam; Ki Bum ; et al. | 2009-06-25 |
High Light Extraction Efficiency Nitride Based Light Emitting Diode By Surface Roughening
App 20090146170 - Zhong; Hong ; et al. | 2009-06-11 |
Method For Increasing The Area Of Non-polar And Semi-polar Nitride Substrates
App 20090072353 - Hirai; Asako ; et al. | 2009-03-19 |
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
Grant 7,504,274 - Chakraborty , et al. March 17, 2 | 2009-03-17 |
Planar Nonpolar M-plane Group Iii-nitride Films Grown On Miscut Substrates
App 20090039356 - Iso; Kenji ; et al. | 2009-02-12 |
Growth Of Planar, Non-polar, Group-iii Nitride Films
App 20090001519 - Haskell; Benjamin A. ; et al. | 2009-01-01 |
PLANAR NONPOLAR m-PLANE GROUP III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
App 20080308907 - Hirai; Asako ; et al. | 2008-12-18 |
Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
Grant 7,427,555 - Haskell , et al. September 23, 2 | 2008-09-23 |
Light Emitting Device For Ac Power Operation
App 20080211421 - Lee; Chung Hoon ; et al. | 2008-09-04 |
OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (Ga,Al,In,B)N DIODE LASERS
App 20080198881 - Farrell; Robert M. ; et al. | 2008-08-21 |
Light Emitting Device Having a Plurality of Light Emitting Cells and Method of Fabricating the Same
App 20080197363 - Lee; Chung Hoon ; et al. | 2008-08-21 |
CLEAVED FACET (Ga,Al,In)N EDGE-EMITTING LASER DIODES GROWN ON SEMIPOLAR BULK GALLIUM NITRIDE SUBSTRATES
App 20080191223 - Nakamura; Shuji ; et al. | 2008-08-14 |
Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES
App 20080191192 - Feezell; Daniel F. ; et al. | 2008-08-14 |
Defect Reduction Of Non-polar And Semi-polar Iii-nitrides With Sidewall Lateral Epitaxial Overgrowth (sleo)
App 20080185690 - Imer; Bilge M. ; et al. | 2008-08-07 |
Non-polar and semi-polar light emitting devices
App 20080179607 - DenBaars; Steven P. ; et al. | 2008-07-31 |
Metalorganic chemical vapor deposittion (MOCVD) growth of high performance non-polar III-nitride optical devices
App 20080164489 - Schmidt; Mathew C. ; et al. | 2008-07-10 |
CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES
App 20080163814 - Kim; Kwang Choong ; et al. | 2008-07-10 |
Dislocation Reduction In Non-polar Iii-nitride Thin Films
App 20080135853 - Craven; Michael D. ; et al. | 2008-06-12 |
Transparent Mirrorless Light Emitting Diode
App 20080128731 - DenBaars; Steven P. ; et al. | 2008-06-05 |
Horizontal Emitting, Vertical Emitting, Beam Shaped, Distributed Feedback (dfb) Lasers By Growth Over A Patterned Substrate
App 20080128737 - Weisbuch; Claude C.A. ; et al. | 2008-06-05 |
High Efficiency White, Single Or Multi-color Light Emitting Diodes (leds) By Index Matching Structures
App 20080121917 - Weisbuch; Claude C. A. ; et al. | 2008-05-29 |
Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO)
Grant 7,361,576 - Imer , et al. April 22, 2 | 2008-04-22 |
Single Or Multi-color High Efficiency Light Emitting Diode (led) By Growth Over A Patterned Substrate
App 20080087909 - Weisbuch; Claude C.A. ; et al. | 2008-04-17 |
Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate
Grant 7,345,298 - Weisbuch , et al. March 18, 2 | 2008-03-18 |
Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)
Grant 7,338,828 - Imer , et al. March 4, 2 | 2008-03-04 |
Growth Of Non-polar M-plane Iii-nitride Film Using Metalorganic Chemical Vapor Deposition (mocvd)
App 20080026502 - Imer; Bilge M. ; et al. | 2008-01-31 |
In-situ defect reduction techniques for nonpolar and semipolar (Al,Ga, In)N
App 20070267654 - Chakraborty; Arpan ; et al. | 2007-11-22 |
Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate
Grant 7,291,864 - Weisbuch , et al. November 6, 2 | 2007-11-06 |
METHOD FOR GROWTH OF SEMIPOLAR (Al,In,Ga,B)N OPTOELECTRONIC DEVICES
App 20070252164 - Zhong; Hong ; et al. | 2007-11-01 |
Method for improved growth of semipolar (Al,In,Ga,B)N
App 20070218703 - Kaeding; John F. ; et al. | 2007-09-20 |
High Efficiency Light Emitting Diode (led)
App 20070145397 - DenBaars; Steven P. ; et al. | 2007-06-28 |
Growth Of Reduced Dislocation Density Non-polar Gallium Nitride
App 20070126023 - Haskell; Benjamin A. ; et al. | 2007-06-07 |
Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
Grant 7,220,658 - Haskell , et al. May 22, 2 | 2007-05-22 |
Technique for the growth of planar semi-polar gallium nitride
Grant 7,220,324 - Baker , et al. May 22, 2 | 2007-05-22 |
Technique For The Growth Of Planar Semi-polar Gallium Nitride
App 20070111531 - Baker; Troy J. ; et al. | 2007-05-17 |
Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
App 20070093073 - Farrell; Robert M. JR. ; et al. | 2007-04-26 |
Lateral growth method for defect reduction of semipolar nitride films
App 20070015345 - Baker; Troy J. ; et al. | 2007-01-18 |
Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)
App 20060270087 - Imer; Bilge M. ; et al. | 2006-11-30 |
Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
App 20060270076 - Imer; Bilge M. ; et al. | 2006-11-30 |
Etching technique for the fabrication of thin (AI, In, Ga)N layers
App 20060246722 - Speck; James S. ; et al. | 2006-11-02 |
Wafer separation technique for the fabrication of free-standing (Al,In,Ga)N wafers
App 20060234486 - Speck; James S. ; et al. | 2006-10-19 |
Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate
App 20060202226 - Weisbuch; Claude C.A. ; et al. | 2006-09-14 |
Technique for the growth of planar semi-polar gallium nitride
App 20060205199 - Baker; Troy J. ; et al. | 2006-09-14 |
Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate
App 20060194359 - Weisbuch; Claude C.A. ; et al. | 2006-08-31 |
Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
App 20060128124 - Haskell; Benjamin A. ; et al. | 2006-06-15 |
Growth of planar, non-polar a-plane gallium nitride by hydride vapor phase epitaxy
App 20060008941 - Haskell; Benjamin A. ; et al. | 2006-01-12 |
Strain-engineered, self-assembled, semiconductor quantum dot lattices
App 20020074543 - Petroff, Pierre M. ; et al. | 2002-06-20 |
Miniature self-pumped monolithically integrated solid state laser
Grant 5,796,771 - DenBaars , et al. August 18, 1 | 1998-08-18 |
Defect reduction in the growth of group III nitrides
Grant 5,650,198 - Denbaars , et al. July 22, 1 | 1997-07-22 |
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