Smith; Richard Peter

Patent Applications and Registrations

Patent applications and USPTO patent grants for Smith; Richard Peter.The latest application filed is for "methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers".

Company Profile

0.31.26

Smith; Richard Peter - Carrboro NC
Smith; Richard Peter - Santa Barbara CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Nitride-based transistors with a protective layer and a low-damage recess Grant 11,316,028 - Sheppard , et al. April 26, 2	2022-04-26
Nitride-based transistors with a cap layer and a recessed gate Grant 9,666,707 - Sheppard , et al. May 30, 2	2017-05-30
Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers Grant 9,224,596 - Saxler , et al. December 29, 2	2015-12-29
Methods of passivating surfaces of wide bandgap semiconductor devices Grant 9,166,033 - Saxler , et al. October 20, 2	2015-10-20
Nitride-based transistors having laterally grown active region and methods of fabricating same Grant 8,946,777 - Saxler , et al. February 3, 2	2015-02-03
Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions Grant 8,803,198 - Smith , et al. August 12, 2	2014-08-12
Methods of Fabricating Thick Semi-Insulating or Insulating Epitaxial Gallium Nitride Layers App 20130344687 - Saxler; Adam William ; et al.	2013-12-26
Devices having thick semi-insulating epitaxial gallium nitride layer Grant 8,575,651 - Saxler , et al. November 5, 2	2013-11-05
Group III Nitride Field Effect Transistors (FETS) Capable of Withstanding High Temperature Reverse Bias Test Conditions App 20120235159 - Smith; Richard Peter ; et al.	2012-09-20
Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions Grant 8,212,289 - Smith , et al. July 3, 2	2012-07-03
Methods of fabricating transistors including dielectrically-supported gate electrodes and related devices Grant 8,049,252 - Smith , et al. November 1, 2	2011-11-01
Nitride-Based Transistors With a Protective Layer and a Low-Damage Recess App 20110140123 - Sheppard; Scott T. ; et al.	2011-06-16
Nitride-based transistors with a protective layer and a low-damage recess Grant 7,906,799 - Sheppard , et al. March 15, 2	2011-03-15
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides Grant 7,858,460 - Ring , et al. December 28, 2	2010-12-28
Methods Of Fabricating Transistors Including Dielectrically-supported Gate Electrodes And Related Devices App 20100171150 - Smith; Richard Peter ; et al.	2010-07-08
Methods of Fabricating Nitride-Based Transistors with a Cap Layer and a Recessed Gate and Related Devices App 20100140664 - Sheppard; Scott ; et al.	2010-06-10
Methods of fabricating transistors including dielectrically-supported gate electrodes Grant 7,709,269 - Smith , et al. May 4, 2	2010-05-04
Cap layers including aluminum nitride for nitride-based transistors Grant 7,709,859 - Smith , et al. May 4, 2	2010-05-04
Methods of fabricating nitride-based transistors with a cap layer and a recessed gate Grant 7,678,628 - Sheppard , et al. March 16, 2	2010-03-16
Nitride-Based Transistors Having Laterally Grown Active Region and Methods of Fabricating Same App 20100012952 - Saxler; Adam William ; et al.	2010-01-21
Passivation of Wide Band-Gap Based Semiconductor Devices with Hydrogen-Free Sputtered Nitrides App 20090215280 - Ring; Zoltan ; et al.	2009-08-27
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses Grant 7,550,784 - Saxler , et al. June 23, 2	2009-06-23
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides Grant 7,525,122 - Ring , et al. April 28, 2	2009-04-28
Group III Nitride Field Effect Transistors (FETS) Capable of Withstanding High Temperature Reverse Bias Test Conditions App 20090101939 - Smith; Richard Peter ; et al.	2009-04-23
Methods of Fabricating Transistors Having Buried N-Type and P-Type Regions Beneath the Source Region App 20090042345 - Saxler; Adam William ; et al.	2009-02-12
Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions Grant 7,465,967 - Smith , et al. December 16, 2	2008-12-16
Transistors having buried n-type and p-type regions beneath the source region Grant 7,456,443 - Saxler , et al. November 25, 2	2008-11-25
Methods of fabricating nitride-based transistors having regrown ohmic contact regions Grant 7,432,142 - Saxler , et al. October 7, 2	2008-10-07
Dielectric passivation for semiconductor devices Grant 7,332,795 - Smith , et al. February 19, 2	2008-02-19
Methods of fabricating nitride-based transistors with a cap layer and a recessed gate App 20070254418 - Sheppard; Scott ; et al.	2007-11-01
Cap Layers Including Aluminum Nitride for Nitride-Based Transistors and Methods of Fabricating Same App 20070164315 - Smith; Richard Peter ; et al.	2007-07-19
Methods of fabricating transistors including dielectrically-supported gate electrodes and related devices App 20070164322 - Smith; Richard Peter ; et al.	2007-07-19
Methods of fabricating nitride-based transistors with a cap layer and a recessed gate Grant 7,238,560 - Sheppard , et al. July 3, 2	2007-07-03
Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides App 20070001174 - Ring; Zoltan ; et al.	2007-01-04
Nitride-based transistors with a protective layer and a low-damage recess App 20060255366 - Sheppard; Scott T. ; et al.	2006-11-16
Thick semi-insulating or insulating epitaxial gallium nitride layers and devices incorporating same App 20060226412 - Saxler; Adam William ; et al.	2006-10-12
Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions App 20060208280 - Smith; Richard Peter ; et al.	2006-09-21
Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same App 20060108606 - Saxler; Adam William ; et al.	2006-05-25
Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof Grant 7,045,404 - Sheppard , et al. May 16, 2	2006-05-16
Nitride-based transistors having laterally grown active region and methods of fabricating same App 20060017064 - Saxler; Adam William ; et al.	2006-01-26
Methods of fabricating nitride-based transistors with a cap layer and a recessed gate App 20060019435 - Sheppard; Scott ; et al.	2006-01-26
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses App 20060006435 - Saxler; Adam William ; et al.	2006-01-12
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses Grant 6,982,204 - Saxler , et al. January 3, 2	2006-01-03
Dielectric passivation for semiconductor devices App 20050258431 - Smith, Richard Peter ; et al.	2005-11-24
Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions App 20050258451 - Saxler, Adam William ; et al.	2005-11-24
Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof App 20050170574 - Sheppard, Scott T. ; et al.	2005-08-04
Methods of fabricating aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment Grant 6,777,278 - Smith August 17, 2	2004-08-17
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses App 20040061129 - Saxler, Adam William ; et al.	2004-04-01
Methods of fabricating aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment App 20030157776 - Smith, Richard Peter	2003-08-21
Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment Grant 6,548,333 - Smith April 15, 2	2003-04-15
Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment and methods of fabricating same App 20020066908 - Smith, Richard Peter	2002-06-06

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