Saxler; Adam William

Patent Applications and Registrations

Patent applications and USPTO patent grants for Saxler; Adam William.The latest application filed is for "memory device with multi-layer liner structure".

Company Profile

0.66.58

Saxler; Adam William - Boise ID
Saxler; Adam William - Durham NC US
Saxler; Adam William - Cary NC

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Memory Device With Multi-layer Liner Structure App 20200287129 - Sarkar; Santanu ; et al.	2020-09-10
Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same Grant 9,331,192 - Saxler May 3, 2	2016-05-03
Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers Grant 9,224,596 - Saxler , et al. December 29, 2	2015-12-29
Methods of passivating surfaces of wide bandgap semiconductor devices Grant 9,166,033 - Saxler , et al. October 20, 2	2015-10-20
Wide bandgap device having a buffer layer disposed over a diamond substrate Grant 9,142,617 - Saxler September 22, 2	2015-09-22
Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures Grant 9,054,017 - Saxler , et al. June 9, 2	2015-06-09
Method of fabricating seminconductor devices including self aligned refractory contacts Grant 9,040,398 - Saxler , et al. May 26, 2	2015-05-26
Heterojunction transistors having barrier layer bandgaps greater than channel layer bandgaps and related methods Grant 9,035,354 - Saxler , et al. May 19, 2	2015-05-19
Nitride-based transistors having laterally grown active region and methods of fabricating same Grant 8,946,777 - Saxler , et al. February 3, 2	2015-02-03
Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions Grant 8,803,198 - Smith , et al. August 12, 2	2014-08-12
Gas driven rotation apparatus and method for forming crystalline layers Grant 8,628,622 - Saxler January 14, 2	2014-01-14
Methods of Fabricating Thick Semi-Insulating or Insulating Epitaxial Gallium Nitride Layers App 20130344687 - Saxler; Adam William ; et al.	2013-12-26
Semiconductor device structures with modulated doping and related methods Grant 8,604,461 - Driscoll , et al. December 10, 2	2013-12-10
Wafer Precursor Prepared For Group Iii Nitride Epitaxial Growth On A Composite Substrate Having Diamond And Silicon Carbide Layers, And Semiconductor Laser Formed Thereon App 20130306990 - Saxler; Adam William	2013-11-21
Devices having thick semi-insulating epitaxial gallium nitride layer Grant 8,575,651 - Saxler , et al. November 5, 2	2013-11-05
Low Resistance Bidirectional Junctions In Wide Bandgap Semiconductor Materials App 20130270514 - Saxler; Adam William	2013-10-17
Semiconductor device structures with modulated and delta doping and related methods Grant 8,536,615 - Driscoll , et al. September 17, 2	2013-09-17
Thick Nitride Semiconductor Structures With Interlayer Structures And Methods Of Fabricating Thick Nitride Semiconductor Structures App 20130221327 - Saxler; Adam William ; et al.	2013-08-29
Wafer precursor prepared for group III nitride epitaxial growth on a composite substrate having diamond and silicon carbide layers, and semiconductor laser formed thereon Grant 8,513,672 - Saxler August 20, 2	2013-08-20
Integrated nitride and silicon carbide-based devices Grant 8,502,235 - Sheppard , et al. August 6, 2	2013-08-06
Group III nitride semiconductor devices with silicon nitride layers and methods of manufacturing such devices Grant 8,481,376 - Saxler , et al. July 9, 2	2013-07-09
Thick nitride semiconductor structures with interlayer structures Grant 8,362,503 - Saxler , et al. January 29, 2	2013-01-29
Methods of fabricating nitride semiconductor structures with interlayer structures Grant 8,324,005 - Saxler , et al. December 4, 2	2012-12-04
Group III Nitride Field Effect Transistors (FETS) Capable of Withstanding High Temperature Reverse Bias Test Conditions App 20120235159 - Smith; Richard Peter ; et al.	2012-09-20
Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions Grant 8,212,289 - Smith , et al. July 3, 2	2012-07-03
Methods of fabricating strain balanced nitride heterojunction transistors Grant 8,153,515 - Saxler April 10, 2	2012-04-10
Methods of Fabricating Nitride Semiconductor Structures with Interlayer Structures App 20110312159 - Saxler; Adam William ; et al.	2011-12-22
Semiconductor With Contoured Structure App 20110233521 - Saxler; Adam William	2011-09-29
Semiconductor Device Structures with Modulated Doping and Related Methods App 20110140083 - Driscoll; Daniel Carleton ; et al.	2011-06-16
Group III Nitride Semiconductor Devices with Silicon Nitride Layers and Methods of Manufacturing Such Devices App 20110136305 - Saxler; Adam William ; et al.	2011-06-09
Integrated Nitride and Silicon Carbide-Based Devices App 20110114968 - Sheppard; Scott T. ; et al.	2011-05-19
Silicon Carbide On Diamond Substrates And Related Devices And Methods App 20110064105 - Saxler; Adam William	2011-03-17
Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers Grant 7,901,994 - Saxler , et al. March 8, 2	2011-03-08
Integrated nitride and silicon carbide-based devices Grant 7,875,910 - Sheppard , et al. January 25, 2	2011-01-25
Silicon carbide on diamond substrates and related devices and methods Grant 7,863,624 - Saxler January 4, 2	2011-01-04
Nitride semiconductor structures with interlayer structures Grant 7,825,432 - Saxler , et al. November 2, 2	2010-11-02
Heterojunction Transistors Having Barrier Layer Bandgaps Greater Than Channel Layer Bandgaps and Related Methods App 20100187570 - Saxler; Adam William ; et al.	2010-07-29
Cap layers including aluminum nitride for nitride-based transistors Grant 7,709,859 - Smith , et al. May 4, 2	2010-05-04
Group III nitride semiconductor devices with silicon nitride layers and methods of manufacturing such devices App 20100068855 - Saxler; Adam William ; et al.	2010-03-18
Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates Grant 7,662,682 - Saxler , et al. February 16, 2	2010-02-16
Nitride-Based Transistors Having Laterally Grown Active Region and Methods of Fabricating Same App 20100012952 - Saxler; Adam William ; et al.	2010-01-21
Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface Grant 7,646,024 - Saxler January 12, 2	2010-01-12
Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices Grant 7,626,217 - Saxler December 1, 2	2009-12-01
Aluminum free group III-nitride based high electron mobility transistors Grant 7,615,774 - Saxler November 10, 2	2009-11-10
Silicon Carbide on Diamond Substrates and Related Devices and Methods App 20090272984 - Saxler; Adam William	2009-11-05
Heterojunction transistors including energy barriers Grant 7,612,390 - Saxler , et al. November 3, 2	2009-11-03
Silicon carbide layer on diamond substrate for supporting group III nitride heterostructure device Grant 7,579,626 - Saxler August 25, 2	2009-08-25
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses Grant 7,550,784 - Saxler , et al. June 23, 2	2009-06-23
Binary group III-nitride based high electron mobility transistors Grant 7,544,963 - Saxler June 9, 2	2009-06-09
Group III Nitride Field Effect Transistors (FETS) Capable of Withstanding High Temperature Reverse Bias Test Conditions App 20090101939 - Smith; Richard Peter ; et al.	2009-04-23
Methods of Fabricating Transistors Having Buried N-Type and P-Type Regions Beneath the Source Region App 20090042345 - Saxler; Adam William ; et al.	2009-02-12
Current aperture transistors and methods of fabricating same Grant 7,479,669 - Saxler January 20, 2	2009-01-20
Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions Grant 7,465,967 - Smith , et al. December 16, 2	2008-12-16
Highly Uniform Group III Nitride Epitaxial Layers on 100 Millimeter Diameter Silicon Carbide Substrates App 20080302298 - Saxler; Adam William ; et al.	2008-12-11
Transistors having buried n-type and p-type regions beneath the source region Grant 7,456,443 - Saxler , et al. November 25, 2	2008-11-25
Co-doping for fermi level control in semi-insulating Group III nitrides Grant 7,449,353 - Saxler November 11, 2	2008-11-11
Methods of fabricating nitride-based transistors having regrown ohmic contact regions Grant 7,432,142 - Saxler , et al. October 7, 2	2008-10-07
Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structures App 20080217645 - Saxler; Adam William ; et al.	2008-09-11
Nitride semiconductor structures with interlayer structures and methods of fabricating nitride semiconductor structures with interlayer structures App 20080220555 - Saxler; Adam William ; et al.	2008-09-11
Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates Grant 7,405,430 - Saxler , et al. July 29, 2	2008-07-29
Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies Grant 7,355,215 - Parikh , et al. April 8, 2	2008-04-08
Structure And Method For Reducing Forward Voltage Across A Silicon Carbide-group Iii Nitride Interface App 20080042141 - Saxler; Adam William	2008-02-21
Current Aperture Transistors and Methods of Fabricating Same App 20080029789 - Saxler; Adam William	2008-02-07
Semiconductor devices including self aligned refractory contacts and methods of fabricating the same App 20070269968 - Saxler; Adam William ; et al.	2007-11-22
Strain compensated semiconductor structures Grant 7,271,416 - Saxler September 18, 2	2007-09-18
High electron mobility transistor Grant 7,253,454 - Saxler August 7, 2	2007-08-07
Cap Layers Including Aluminum Nitride for Nitride-Based Transistors and Methods of Fabricating Same App 20070164315 - Smith; Richard Peter ; et al.	2007-07-19
Gas driven rotation apparatus and method for forming crystalline layers App 20070062455 - Saxler; Adam William	2007-03-22
Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same Grant 7,170,111 - Saxler January 30, 2	2007-01-30
Co-doping for fermi level control in semi-insulating group III nitrides App 20070015299 - Saxler; Adam William	2007-01-18
High power density and/or linearity transistors Grant 7,161,194 - Parikh , et al. January 9, 2	2007-01-09
Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same App 20070004184 - Saxler; Adam William	2007-01-04
Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices App 20060289901 - Sheppard; Scott T. ; et al.	2006-12-28
Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates App 20060278891 - Saxler; Adam William ; et al.	2006-12-14
Heterojunction transistors including energy barriers and related methods App 20060255364 - Saxler; Adam William ; et al.	2006-11-16
Co-doping for fermi level control in semi-insulating Group III nitrides Grant 7,135,715 - Saxler November 14, 2	2006-11-14
Binary group III-nitride based high electron mobility transistors and methods of fabricating same App 20060244011 - Saxler; Adam William	2006-11-02
Aluminum free group III-nitride based high electron mobility transistors and methods of fabricating same App 20060244010 - Saxler; Adam William	2006-11-02
Thick semi-insulating or insulating epitaxial gallium nitride layers and devices incorporating same App 20060226412 - Saxler; Adam William ; et al.	2006-10-12
Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices App 20060226413 - Saxler; Adam William	2006-10-12
Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same App 20060214196 - Saxler; Adam William	2006-09-28
Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices Grant 7,112,860 - Saxler September 26, 2	2006-09-26
Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions App 20060208280 - Smith; Richard Peter ; et al.	2006-09-21
High electron mobility transistor App 20060197109 - Saxler; Adam William	2006-09-07
Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same Grant 7,084,441 - Saxler August 1, 2	2006-08-01
Silicon carbide on diamond substrates and related devices and methods App 20060138455 - Saxler; Adam William	2006-06-29
High power density and/or linearity transistors App 20060118809 - Parikh; Primit ; et al.	2006-06-08
Strain balanced nitride heterojunction transistors and methods of fabricating strain balanced nitride heterojunction transistors App 20060121682 - Saxler; Adam William	2006-06-08
Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies App 20060118823 - Parikh; Primit ; et al.	2006-06-08
Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same App 20060108606 - Saxler; Adam William ; et al.	2006-05-25
Strain balanced nitride heterojunction transistors Grant 7,030,428 - Saxler April 18, 2	2006-04-18
Nitrogen passivation of interface states in SiO.sub.2/SiC structures Grant 7,022,378 - Das , et al. April 4, 2	2006-04-04
Nitride-based transistors having laterally grown active region and methods of fabricating same App 20060017064 - Saxler; Adam William ; et al.	2006-01-26
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses App 20060006435 - Saxler; Adam William ; et al.	2006-01-12
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses Grant 6,982,204 - Saxler , et al. January 3, 2	2006-01-03
Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same App 20050258450 - Saxler, Adam William	2005-11-24
Methods of fabricating nitride-based transistors having regrown ohmic contact regions and nitride-based transistors having regrown ohmic contact regions App 20050258451 - Saxler, Adam William ; et al.	2005-11-24
Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same App 20050173728 - Saxler, Adam William	2005-08-11
Silicon Carbide on Diamond Substrates and Related Devices and Methods App 20050164482 - Saxler, Adam William	2005-07-28
Co-doping for fermi level control in semi-insulating Group III nitrides App 20050145874 - Saxler, Adam William	2005-07-07
Heterogeneous bandgap structures for semiconductor devices and manufacturing methods therefor Grant 6,875,995 - Saxler April 5, 2	2005-04-05
Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures Grant 6,841,001 - Saxler January 11, 2	2005-01-11
Strain compensated semiconductor structures App 20040206978 - Saxler, Adam William	2004-10-21
Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices App 20040173816 - Saxler, Adam William	2004-09-09
Nitrogen passivation of interface states in SiO2/SiC structures App 20040101625 - Das, Mrinal Kanti ; et al.	2004-05-27
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses App 20040061129 - Saxler, Adam William ; et al.	2004-04-01
Heterogeneous bandgap structures for semiconductor devices and manufacturing methods therefor App 20040031956 - Saxler, Adam William	2004-02-19
Strain Compensated Semiconductor Structures And Methods Of Fabricating Strain Compensated Semiconductor Structures App 20040012015 - Saxler, Adam William	2004-01-22
Strain balanced nitride heterojunction transistors and methods of fabricating strain balanced nitride heterojunction transistors App 20030102482 - Saxler, Adam William	2003-06-05