| Patent | Date |
|---|
Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy
Grant 7,102,234 - Cabral, Jr. , et al. September 5, 2 | 2006-09-05 |
Structure for controlling the interface roughness of cobalt disilicide
Grant 7,081,676 - Agnello , et al. July 25, 2 | 2006-07-25 |
Self-aligned silicide (salicide) process for low resistivity contacts to thin film silicon-on-insulator and bulk mosfets and for shallow junctions
App 20060043484 - Cabral; Cyril JR. ; et al. | 2006-03-02 |
Self-aligned silicide (salicide) process for low resistivity contacts to thin film silicon-on-insulator and bulk MOSFETS and for shallow junctions
Grant 6,987,050 - Cabral, Jr. , et al. January 17, 2 | 2006-01-17 |
Method and structure for controlling the interface roughness of cobalt disilicide
Grant 6,809,030 - Agnello , et al. October 26, 2 | 2004-10-26 |
Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy
App 20040195695 - Cabral,, Cyril JR. ; et al. | 2004-10-07 |
Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy
Grant 6,753,606 - Cabral, Jr. , et al. June 22, 2 | 2004-06-22 |
Method and structure for controlling the interface roughness of cobalt disilicide
App 20040087160 - Agnello, Paul David ; et al. | 2004-05-06 |
All-in-one disposable/permanent spacer elevated source/drain, self-aligned silicide CMOS
Grant 6,727,135 - Lee , et al. April 27, 2 | 2004-04-27 |
Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby
Grant 6,716,708 - Cabral, Jr. , et al. April 6, 2 | 2004-04-06 |
All-in-one disposable/permanent spacer elevated source/drain, self-aligned silicide CMOS
App 20030209765 - Lee, Kam Leung ; et al. | 2003-11-13 |
All-in-one disposable/permanent spacer elevated source/drain, self-aligned silicide CMOS
Grant 6,614,079 - Lee , et al. September 2, 2 | 2003-09-02 |
Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby
App 20030132487 - Cabral, Cyril JR. ; et al. | 2003-07-17 |
Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby
Grant 6,555,880 - Cabral, Jr. , et al. April 29, 2 | 2003-04-29 |
Self-aligned silicide (salicide) process for strained silicon MOSFET on SiGe and structure formed thereby
App 20030068883 - Ajmera, Atul Champaklal ; et al. | 2003-04-10 |
All-in-one disposable/permanent spacer elevated source/drain, self-aligned silicide CMOS
App 20030015762 - Lee, Kam Leung ; et al. | 2003-01-23 |
Self-aligned silicide (salicide) process for strained silicon MOSFET ON SiGe and structure formed thereby
Grant 6,503,833 - Ajmera , et al. January 7, 2 | 2003-01-07 |
Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby
App 20020185691 - Cabral, Cyril JR. ; et al. | 2002-12-12 |
Method and structure for controlling the interface roughness of cobalt disilicide
App 20020182836 - Agnello, Paul David ; et al. | 2002-12-05 |
Method and structure for retarding high temperature agglomeration of silicides using alloys
App 20020151158 - Cabral, Cyril JR. ; et al. | 2002-10-17 |
Method and structure for controlling the interface roughness of cobalt disilicide
Grant 6,440,851 - Agnello , et al. August 27, 2 | 2002-08-27 |
Damascene-gate process for the fabrication of MOSFET devices with minimum poly-gate depletion, silicided source and drain junctions, and low sheet resistance gate-poly
Grant 6,440,808 - Boyd , et al. August 27, 2 | 2002-08-27 |
Method And Structure For Retarding High Temperature Agglomeration Of Silicides Using Alloys
App 20020061636 - Cabral, Cyril JR. ; et al. | 2002-05-23 |
Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy
App 20020042197 - Cabral,, Cyril JR. ; et al. | 2002-04-11 |
Self-aligned silicone process for low resistivity contacts to thin film silicon-on-insulator mosfets
App 20020031909 - Cabral, Cyril JR. ; et al. | 2002-03-14 |
Self-aligned silicide (salicide) process for low resistivity contacts to thin film silicon-on-insulator and bulk MOSFETS and for shallow Junctions
App 20020022366 - Cabral, Cyril JR. ; et al. | 2002-02-21 |
Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy
Grant 6,331,486 - Cabral, Jr. , et al. December 18, 2 | 2001-12-18 |
Microwave annealing
Grant 6,051,283 - Lee , et al. April 18, 2 | 2000-04-18 |
Low temperature formation of low resistivity titanium silicide
Grant 5,828,131 - Cabral, Jr. , et al. October 27, 1 | 1998-10-27 |
Tasin oxygen diffusion barrier in multilayer structures
Grant 5,796,166 - Agnello , et al. August 18, 1 | 1998-08-18 |
Tasin oxygen diffusion barrier in multilayer structures
Grant 5,776,823 - Agnello , et al. July 7, 1 | 1998-07-07 |
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