Raming; Georg

Patent Applications and Registrations

Patent applications and USPTO patent grants for Raming; Georg.The latest application filed is for "single crystal of silicon with <100> orientation, which is doped with n-type dopant, and method for producing such a singl".

Company Profile

1.7.7

Raming; Georg - Tann DE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Single crystal of silicon with <100> orientation, which is doped with n-type dopant, and method for producing such a single crystal Grant 11,390,962 - Raming , et al. July 19, 2	2022-07-19
SINGLE CRYSTAL OF SILICON WITH <100> ORIENTATION, WHICH IS DOPED WITH N-TYPE DOPANT, AND METHOD FOR PRODUCING SUCH A SINGL App 20200270764 - RAMING; Georg ; et al.	2020-08-27
Device for producing a monocrystal by crystallizing said monocrystal in a melting area Grant 9,932,690 - Raming , et al. April 3, 2	2018-04-03
Method for growing a single crystal by crystallizing the single crystal from a float zone Grant 9,932,691 - Raming , et al. April 3, 2	2018-04-03
Apparatus and process for producing a crystal of semiconductor material Grant 9,828,693 - Brenninger , et al. November 28, 2	2017-11-28
Method and apparatus for producing a single crystal Grant 9,422,634 - Raming , et al. August 23, 2	2016-08-23
Method For Growing A Single Crystal By Crystallizing The Single Crystal From A Float Zone App 20160177469 - RAMING; Georg ; et al.	2016-06-23
Apparatus And Process For Producing A Crystal Of Semiconductor Material App 20150354087 - BRENNINGER; Georg ; et al.	2015-12-10
Device For Producing A Monocrystal By Crystallizing Said Monocrystal In A Melting Area App 20150203987 - Raming; Georg ; et al.	2015-07-23
Method and Apparatus For Producing A Single Crystal App 20130160698 - Raming; Georg ; et al.	2013-06-27
Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm Grant 8,357,590 - Raming , et al. January 22, 2	2013-01-22
Method For Producing Semiconductor Wafers Composed Of Silicon Having A Diameter Of At Least 450 mm, and Semiconductor Wafer Composed Of Silicon Having A Diameter of 450 mm App 20120315428 - Raming; Georg ; et al.	2012-12-13
Method For Producing Semiconductor Wafers Composed Of Silicon Having A Diameter Of At Least 450 mm, and Semiconductor Wafer Composed Of Silicon Having A Diameter of 450 mm App 20110175202 - Raming; Georg ; et al.	2011-07-21

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.