| Patent | Date |
|---|
Memory Device Including A Ferroelectric Semiconductor Channel And Methods Of Forming The Same
App 20220310655 - RABKIN; Peter ; et al. | 2022-09-29 |
Memory Device Including A Ferroelectric Semiconductor Channel And Methods Of Forming The Same
App 20220310656 - RABKIN; Peter ; et al. | 2022-09-29 |
Non-volatile memory with capacitors using metal under signal line or above a device capacitor
Grant 11,444,016 - Lin , et al. September 13, 2 | 2022-09-13 |
Semiconductor die containing silicon nitride stress compensating regions and method for making the same
Grant 11,430,745 - Wu , et al. August 30, 2 | 2022-08-30 |
Bonded assembly formed by hybrid wafer bonding using selectively deposited metal liners
Grant 11,424,215 - Hou , et al. August 23, 2 | 2022-08-23 |
Bonded Semiconductor Die Assembly With Metal Alloy Bonding Pads And Methods Of Forming The Same
App 20220246562 - HOU; Lin ; et al. | 2022-08-04 |
Non-volatile memory with multiple wells for word line switch transistors
Grant 11,404,123 - Shao , et al. August 2, 2 | 2022-08-02 |
Methods for reusing substrates during manufacture of a bonded assembly including a logic die and a memory die
Grant 11,398,451 - Baraskar , et al. July 26, 2 | 2022-07-26 |
Bonded Three-dimensional Memory Devices With Backside Source Power Supply Mesh And Methods Of Making The Same
App 20220208748 - RABKIN; Peter ; et al. | 2022-06-30 |
Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same
Grant 11,374,020 - Baraskar , et al. June 28, 2 | 2022-06-28 |
Bonded die assembly containing a manganese-containing oxide bonding layer and methods for making the same
Grant 11,362,079 - Wu , et al. June 14, 2 | 2022-06-14 |
Interfacial Tilt-resistant Bonded Assembly And Methods For Forming The Same
App 20220173071 - HOU; Lin ; et al. | 2022-06-02 |
Interfacial tilt-resistant bonded assembly and methods for forming the same
Grant 11,348,901 - Hou , et al. May 31, 2 | 2022-05-31 |
Ferroelectric memory devices with dual dielectric confinement and methods of forming the same
Grant 11,335,790 - Rabkin , et al. May 17, 2 | 2022-05-17 |
Bonded Assembly Formed By Hybrid Wafer Bonding Using Selectively Deposited Metal Liners
App 20220149002 - HOU; Lin ; et al. | 2022-05-12 |
Three-dimensional memory device including a silicon-germanium source contact layer and method of making the same
Grant 11,322,509 - Baraskar , et al. May 3, 2 | 2022-05-03 |
Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same
Grant 11,302,713 - Baraskar , et al. April 12, 2 | 2022-04-12 |
Three-dimensional memory device with vertical field effect transistors and method of making thereof
Grant 11,296,113 - Kim , et al. April 5, 2 | 2022-04-05 |
Bonded Assembly Including Interconnect-level Bonding Pads And Methods Of Forming The Same
App 20220093555 - HOU; Lin ; et al. | 2022-03-24 |
Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same
Grant 11,282,857 - Baraskar , et al. March 22, 2 | 2022-03-22 |
Embedded bonded assembly and method for making the same
Grant 11,276,705 - Wu , et al. March 15, 2 | 2022-03-15 |
Bonding pads including interfacial electromigration barrier layers and methods of making the same
Grant 11,270,963 - Wu , et al. March 8, 2 | 2022-03-08 |
Three-dimensional Memory Device With Vertical Field Effect Transistors And Method Of Making Thereof
App 20220068966 - RABKIN; Peter ; et al. | 2022-03-03 |
Three-dimensional Memory Device With Vertical Field Effect Transistors And Method Of Making Thereof
App 20220068954 - KIM; Kwang-Ho ; et al. | 2022-03-03 |
Three-dimensional Memory Device With Vertical Field Effect Transistors And Method Of Making Thereof
App 20220068903 - KIM; Kwang-Ho ; et al. | 2022-03-03 |
Three-dimensional Memory Device With High Mobility Channels And Nickel Aluminum Silicide Or Germanide Drain Contacts And Method Of Making The Same
App 20220045088 - BARASKAR; Ashish ; et al. | 2022-02-10 |
Three-dimensional Memory Device With High Mobility Channels And Nickel Aluminum Silicide Or Germanide Drain Contacts And Method Of Making The Same
App 20220045087 - BARASKAR; Ashish ; et al. | 2022-02-10 |
Bonded assembly containing laterally bonded bonding pads and methods of forming the same
Grant 11,239,204 - Wu , et al. February 1, 2 | 2022-02-01 |
Three-dimensional Memory Device Including Iii-v Compound Semiconductor Channel Layer And Method Of Making The Same
App 20210408033 - BARASKAR; Ashish Kumar ; et al. | 2021-12-30 |
Three-dimensional Memory Device Including Iii-v Compound Semiconductor Channel Layer And Method Of Making The Same
App 20210408032 - BARASKAR; Ashish Kumar ; et al. | 2021-12-30 |
Three-dimensional Memory Device Containing Iii-v Compound Semiconductor Channel And Contacts And Method Of Making The Same
App 20210375909 - BARASKAR; Ashish ; et al. | 2021-12-02 |
Three-dimensional Memory Device Containing Iii-v Compound Semiconductor Channel And Contacts And Method Of Making The Same
App 20210375908 - BARASKAR; Ashish ; et al. | 2021-12-02 |
Three-dimensional Memory Device Containing Iii-v Compound Semiconductor Channel And Contacts And Method Of Making The Same
App 20210375910 - BARASKAR; Ashish ; et al. | 2021-12-02 |
Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same
Grant 11,177,284 - Rabkin , et al. November 16, 2 | 2021-11-16 |
Three-dimensional memory device containing aluminum-silicon word lines and methods of manufacturing the same
Grant 11,164,883 - Rabkin , et al. November 2, 2 | 2021-11-02 |
Bonded Assembly Containing Low Dielectric Constant Bonding Dielectric And Methods Of Forming The Same
App 20210327838 - HOU; Lin ; et al. | 2021-10-21 |
Bonded Assembly Containing Bonding Pads Spaced Apart By Polymer Material, And Methods Of Forming The Same
App 20210320075 - HOU; Lin ; et al. | 2021-10-14 |
Semiconductor Die Containing Silicon Nitride Stress Compensating Regions And Method For Making The Same
App 20210272912 - WU; Chen ; et al. | 2021-09-02 |
Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same
Grant 11,107,516 - Rabkin , et al. August 31, 2 | 2021-08-31 |
Ferroelectric Memory Devices Containing A Two-dimensional Charge Carrier Gas Channel And Methods Of Making The Same
App 20210264959 - RABKIN; Peter ; et al. | 2021-08-26 |
Bonded assembly containing a dielectric bonding pattern definition layer and methods of forming the same
Grant 11,094,653 - Wu , et al. August 17, 2 | 2021-08-17 |
Bonded assembly containing horizontal and vertical bonding interfaces and methods of forming the same
Grant 11,088,116 - Wu , et al. August 10, 2 | 2021-08-10 |
Temperature dependent impedance mitigation in non-volatile memory
Grant 11,074,976 - Rabkin , et al. July 27, 2 | 2021-07-27 |
Bonding Pads Including Interfacial Electromigration Barrier Layers And Methods Of Making The Same
App 20210217716 - WU; Chen ; et al. | 2021-07-15 |
Bonded die assembly containing partially filled through-substrate via structures and methods for making the same
Grant 11,037,908 - Wu , et al. June 15, 2 | 2021-06-15 |
Hot-cold VTH mismatch using VREAD modulation
Grant 11,031,088 - Kang , et al. June 8, 2 | 2021-06-08 |
Bonded Assembly Containing Laterally Bonded Bonding Pads And Methods Of Forming The Same
App 20210159215 - WU; Chen ; et al. | 2021-05-27 |
Bonded Assembly Containing Horizontal And Vertical Bonding Interfaces And Methods Of Forming The Same
App 20210159216 - WU; Chen ; et al. | 2021-05-27 |
Bonded Assembly Containing A Dielectric Bonding Pattern Definition Layer And Methods Of Forming The Same
App 20210143115 - WU; Chen ; et al. | 2021-05-13 |
Porous barrier layer for improving reliability of through-substrate via structures and methods of forming the same
Grant 11,004,773 - Wu , et al. May 11, 2 | 2021-05-11 |
Three-dimensional memory device including liner free molybdenum word lines and methods of making the same
Grant 10,991,721 - Rabkin , et al. April 27, 2 | 2021-04-27 |
Programming to minimize cross-temperature threshold voltage widening
Grant 10,978,145 - Ray , et al. April 13, 2 | 2021-04-13 |
Ferroelectric Memory Devices With Dual Dielectric Confinement And Methods Of Forming The Same
App 20210091204 - RABKIN; Peter ; et al. | 2021-03-25 |
Methods For Reusing Substrates During Manufacture Of A Bonded Assembly Including A Logic Die And A Memory Die
App 20210082865 - BARASKAR; Ashish ; et al. | 2021-03-18 |
Embedded Bonded Assembly And Method For Making The Same
App 20210066317 - WU; Chen ; et al. | 2021-03-04 |
Temperature Dependent Impedance Mitigation In Non-volatile Memory
App 20210065802 - Rabkin; Peter ; et al. | 2021-03-04 |
Programming To Minimize Cross-temperature Threshold Voltage Widening
App 20210050054 - Ray; Biswajit ; et al. | 2021-02-18 |
Erase operation in 3D NAND
Grant 10,923,196 - Rabkin , et al. February 16, 2 | 2021-02-16 |
Location dependent impedance mitigation in non-volatile memory
Grant 10,910,064 - Rabkin , et al. February 2, 2 | 2021-02-02 |
Bonded Die Assembly Containing Partially Filled Through-substrate Via Structures And Methods For Making The Same
App 20210028148 - WU; Chen ; et al. | 2021-01-28 |
Bonded Die Assembly Containing A Manganese-containing Oxide Bonding Layer And Methods For Making The Same
App 20200395350 - WU; Chen ; et al. | 2020-12-17 |
Three-dimensional Memory Device Including A Silicon-germanium Source Contact Layer And Method Of Making The Same
App 20200388626 - BARASKAR; Ashish ; et al. | 2020-12-10 |
Three-dimensional Memory Device Including A Silicon-germanium Source Contact Layer And Method Of Making The Same
App 20200388688 - BARASKAR; Ashish ; et al. | 2020-12-10 |
Non-volatile memory with capacitors using metal under signal line or above a device capacitor
Grant 10,847,452 - Lin , et al. November 24, 2 | 2020-11-24 |
Three-dimensional memory device including liner free molybdenum word lines and methods of making the same
Grant 10,840,259 - Rabkin , et al. November 17, 2 | 2020-11-17 |
Porous Barrier Layer For Improving Reliability Of Through-substrate Via Structures And Methods Of Forming The Same
App 20200343161 - WU; Chen ; et al. | 2020-10-29 |
Hot-cold Vth Mismatch Using Vread Modulation
App 20200321061 - Kang; Dae Wung ; et al. | 2020-10-08 |
Non-volatile memory with capacitors using metal under pads
Grant 10,789,992 - Lin , et al. September 29, 2 | 2020-09-29 |
Three-dimensional Memory Device Including Liner Free Molybdenum Word Lines And Methods Of Making The Same
App 20200295039 - RABKIN; Peter ; et al. | 2020-09-17 |
Non-volatile Memory With Capacitors Using Metal Under Signal Line Or Above A Device Capacitor
App 20200294909 - Lin; Luisa ; et al. | 2020-09-17 |
Non-volatile Memory With Capacitors Using Metal Under Signal Line Or Above A Device Capacitor
App 20200294910 - Lin; Luisa ; et al. | 2020-09-17 |
Three-dimensional memory device containing aluminum-silicon word lines and methods of manufacturing the same
Grant 10763271 - | 2020-09-01 |
Impedance mismatch mitigation scheme that applies asymmetric voltage pulses to compensate for asymmetries from applying symmetric voltage pulses
Grant 10,755,788 - Rabkin , et al. A | 2020-08-25 |
Hot-cold VTH mismatch using VREAD modulation
Grant 10,726,926 - Kang , et al. | 2020-07-28 |
Ferroelectric Memory Devices Containing A Two-dimensional Charge Carrier Gas Channel And Methods Of Making The Same
App 20200203381 - RABKIN; Peter ; et al. | 2020-06-25 |
Three-dimensional Memory Device With A Graphene Channel And Methods Of Making The Same
App 20200203362 - Rabkin; Peter ; et al. | 2020-06-25 |
Erase operation in 3D NAND flash memory including pathway impedance compensation
Grant 10,650,898 - Rabkin , et al. | 2020-05-12 |
Erase Operation In 3d Nand
App 20200143888 - Rabkin; Peter ; et al. | 2020-05-07 |
Location Dependent Impedance Mitigation In Non-volatile Memory
App 20200143893 - Rabkin; Peter ; et al. | 2020-05-07 |
Impedance Mismatch Mitigation Scheme
App 20200143889 - Rabkin; Peter ; et al. | 2020-05-07 |
Hot-cold Vth Mismatch Using Vread Modulation
App 20200105349 - Kang; Dae Wung ; et al. | 2020-04-02 |
Three-dimensional Memory Device Including Liner Free Molybdenum Word Lines And Methods Of Making The Same
App 20200051993 - RABKIN; Peter ; et al. | 2020-02-13 |
Non-volatile Memory With Capacitors Using Metal Under Signal Line Or Above A Device Capacitor
App 20200013714 - Lin; Luisa ; et al. | 2020-01-09 |
Non-volatile Memory With Capacitors Using Metal Under Pads
App 20200013434 - Lin; Luisa ; et al. | 2020-01-09 |
Three-dimensional Memory Device Containing Aluminum-silicon Word Lines And Methods Of Manufacturing The Same
App 20200006374 - RABKIN; Peter ; et al. | 2020-01-02 |
Three-dimensional Memory Device Containing Aluminum-silicon Word Lines And Methods Of Manufacturing The Same
App 20200006364 - RABKIN; Peter ; et al. | 2020-01-02 |
Metal contact via structure surrounded by an air gap and method of making thereof
Grant 10,319,680 - Sel , et al. | 2019-06-11 |
NAND boosting using dynamic ramping of word line voltages
Grant 10,297,329 - Rabkin , et al. | 2019-05-21 |
Multiple liner interconnects for three dimensional memory devices and method of making thereof
Grant 10,115,459 - Yamada , et al. October 30, 2 | 2018-10-30 |
NAND structure with tier select gate transistors
Grant 9,953,717 - Sabde , et al. April 24, 2 | 2018-04-24 |
Method of making a three-dimensional memory device having a heterostructure quantum well channel
Grant 9,941,295 - Rabkin , et al. April 10, 2 | 2018-04-10 |
Multi-tier memory stack structure containing non-overlapping support pillar structures and method of making thereof
Grant 9,881,929 - Ravikirthi , et al. January 30, 2 | 2018-01-30 |
Methods for manufacturing ultrathin semiconductor channel three-dimensional memory devices
Grant 9,876,025 - Rabkin , et al. January 23, 2 | 2018-01-23 |
Three dimensional NAND device containing fluorine doped layer and method of making thereof
Grant 9,825,051 - Rabkin , et al. November 21, 2 | 2017-11-21 |
Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereof
Grant 9,818,801 - Rabkin , et al. November 14, 2 | 2017-11-14 |
Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory device
Grant 9,799,669 - Rabkin , et al. October 24, 2 | 2017-10-24 |
Nand Structure With Tier Select Gate Transistors
App 20170287566 - Sabde; Jagdish ; et al. | 2017-10-05 |
Ultrathin semiconductor channel three-dimensional memory devices
Grant 9,780,108 - Rabkin , et al. October 3, 2 | 2017-10-03 |
3D vertical NAND with III-V channel
Grant 9,761,604 - Rabkin , et al. September 12, 2 | 2017-09-12 |
3D NAND with partial block erase
Grant 9,711,229 - Rabkin , et al. July 18, 2 | 2017-07-18 |
Reversible resistivity memory with crystalline silicon bit line
Grant 9,685,484 - Rabkin , et al. June 20, 2 | 2017-06-20 |
Method of forming 3D vertical NAND with III-V channel
Grant 9,685,454 - Rabkin , et al. June 20, 2 | 2017-06-20 |
3D NAND with oxide semiconductor channel
Grant 9,634,097 - Rabkin , et al. April 25, 2 | 2017-04-25 |
Ultrathin Semiconductor Channel Three-dimensional Memory Devices
App 20170110464 - RABKIN; Peter ; et al. | 2017-04-20 |
Methods For Manufacturing Ultrathin Semiconductor Channel Three-dimensional Memory Devices
App 20170110470 - RABKIN; Peter ; et al. | 2017-04-20 |
NAND Boosting Using Dynamic Ramping of Word Line Voltages
App 20170062068 - Rabkin; Peter ; et al. | 2017-03-02 |
NAND boosting using dynamic ramping of word line voltages
Grant 9,530,506 - Rabkin , et al. December 27, 2 | 2016-12-27 |
Three-dimensional memory device containing CMOS devices over memory stack structures
Grant 9,530,790 - Lu , et al. December 27, 2 | 2016-12-27 |
Method Of Making A Three-dimensional Memory Device Having A Heterostructure Quantum Well Channel
App 20160358933 - Rabkin; Peter ; et al. | 2016-12-08 |
Vertical memory device with bit line air gap
Grant 9,515,085 - Rabkin , et al. December 6, 2 | 2016-12-06 |
Three dimensional memory device containing aluminum source contact via structure and method of making thereof
Grant 9,478,495 - Pachamuthu , et al. October 25, 2 | 2016-10-25 |
Method Of Forming 3D Vertical NAND With III-V Channel
App 20160284724 - Rabkin; Peter ; et al. | 2016-09-29 |
3D Vertical NAND With III-V Channel
App 20160284723 - Rabkin; Peter ; et al. | 2016-09-29 |
Memory cell with high-k charge trapping layer
Grant 9,449,985 - Rabkin , et al. September 20, 2 | 2016-09-20 |
Vertical NAND device with low capacitance and silicided word lines
Grant 9,449,984 - Alsmeier , et al. September 20, 2 | 2016-09-20 |
Band gap tailoring for a tunneling dielectric for a three-dimensional memory structure
Grant 9,449,980 - Rabkin September 20, 2 | 2016-09-20 |
Fabricating 3D NAND memory having monolithic crystalline silicon vertical NAND channel
Grant 9,443,865 - Rabkin , et al. September 13, 2 | 2016-09-13 |
Vertical bit line wide band gap TFT decoder
Grant 9,443,907 - Rabkin , et al. September 13, 2 | 2016-09-13 |
Three-dimensional memory device having a heterostructure quantum well channel
Grant 9,425,299 - Rabkin , et al. August 23, 2 | 2016-08-23 |
Thin film transistor
Grant 9,406,781 - Rabkin , et al. August 2, 2 | 2016-08-02 |
Fabricating 3D NAND Memory Having Monolithic Crystalline Silicon Vertical NAND Channel
App 20160181272 - Rabkin; Peter ; et al. | 2016-06-23 |
Method of forming memory cell with high-k charge trapping layer
Grant 9,368,510 - Rabkin , et al. June 14, 2 | 2016-06-14 |
NAND Boosting Using Dynamic Ramping of Word Line Voltages
App 20160148691 - Rabkin; Peter ; et al. | 2016-05-26 |
3D NAND With Oxide Semiconductor Channel
App 20160149004 - Rabkin; Peter ; et al. | 2016-05-26 |
Band Gap Tailoring For A Tunneling Dielectric For A Three-dimensional Memory Structure
App 20160126248 - Rabkin; Peter | 2016-05-05 |
Three dimensional NAND device with silicon germanium heterostructure channel
Grant 9,331,093 - Rabkin , et al. May 3, 2 | 2016-05-03 |
Three Dimensional Nand Device Containing Fluorine Doped Layer And Method Of Making Thereof
App 20160118396 - RABKIN; Peter ; et al. | 2016-04-28 |
Single-semiconductor-layer Channel In A Memory Opening For A Three-dimensional Non-volatile Memory Device
App 20160111432 - Rabkin; Peter ; et al. | 2016-04-21 |
Three Dimensional Nand Device With Silicon Germanium Heterostructure Channel
App 20160099250 - Rabkin; Peter ; et al. | 2016-04-07 |
Vertical Memory Device With Bit Line Air Gap
App 20160093635 - RABKIN; Peter ; et al. | 2016-03-31 |
3D memory having crystalline silicon NAND string channel
Grant 9,287,290 - Rabkin , et al. March 15, 2 | 2016-03-15 |
3D non-volatile memory with metal silicide interconnect
Grant 9,281,317 - Higashitani , et al. March 8, 2 | 2016-03-08 |
3D non-volatile storage with wide band gap transistor decoder
Grant 9,240,420 - Rabkin , et al. January 19, 2 | 2016-01-19 |
Vertical TFT with tunnel barrier
Grant 9,230,985 - Wu , et al. January 5, 2 | 2016-01-05 |
Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory device
Grant 9,230,980 - Rabkin , et al. January 5, 2 | 2016-01-05 |
Thin Film Transistor
App 20150318380 - Rabkin; Peter ; et al. | 2015-11-05 |
Three dimensional NAND devices with air gap or low-k core
Grant 9,177,966 - Rabkin , et al. November 3, 2 | 2015-11-03 |
Vertical Bit Line Wide Band Gap TFT Decoder
App 20150311256 - Rabkin; Peter ; et al. | 2015-10-29 |
Vertical bit line TFT decoder for high voltage operation
Grant 9,165,933 - Rabkin , et al. October 20, 2 | 2015-10-20 |
Thin film transistor
Grant 9,129,681 - Rabkin , et al. September 8, 2 | 2015-09-08 |
3D non-volatile storage with transistor decoding structure
Grant 9,123,420 - Rabkin , et al. September 1, 2 | 2015-09-01 |
Vertical bit line wide band gap TFT decoder
Grant 9,105,468 - Rabkin , et al. August 11, 2 | 2015-08-11 |
Non-volatile storage with metal oxide switching element and methods for fabricating the same
Grant 9,034,689 - Sekar , et al. May 19, 2 | 2015-05-19 |
Trap passivation in memory cell with metal oxide switching element
Grant 8,987,046 - Sekar , et al. March 24, 2 | 2015-03-24 |
3D Non-Volatile Storage With Transistor Decoding Structure
App 20150078090 - Rabkin; Peter ; et al. | 2015-03-19 |
Single-semiconductor-layer Channel In A Memory Opening For A Three-dimensional Non-volatile Memory Device
App 20150076586 - RABKIN; Peter ; et al. | 2015-03-19 |
3d Non-volatile Storage With Wide Band Gap Transistor Decoder
App 20150069377 - Rabkin; Peter ; et al. | 2015-03-12 |
Vertical Bit Line Wide Band Gap Tft Decoder
App 20150069320 - Rabkin; Peter ; et al. | 2015-03-12 |
3D Non-Volatile Memory With Metal Silicide Interconnect
App 20150054046 - Higashitani; Masaaki ; et al. | 2015-02-26 |
Method for fabricating a metal silicide interconnect in 3D non-volatile memory
Grant 8,956,968 - Higashitani , et al. February 17, 2 | 2015-02-17 |
Method for fabricating passive devices for 3D non-volatile memory
Grant 8,951,859 - Higashitani , et al. February 10, 2 | 2015-02-10 |
Method of forming transistors with ultra-short gate feature
Grant 8,946,003 - Rabkin , et al. February 3, 2 | 2015-02-03 |
3D non-volatile memory with metal silicide interconnect
Grant 8,933,502 - Higashitani , et al. January 13, 2 | 2015-01-13 |
3D non-volatile storage with transistor decoding structure
Grant 8,923,048 - Rabkin , et al. December 30, 2 | 2014-12-30 |
3D non-volatile storage with transistor decoding structure
Grant 08923048 - | 2014-12-30 |
Vertical Nand Device With Low Capacitance And Silicided Word Lines
App 20140361360 - Alsmeier; Johann ; et al. | 2014-12-11 |
Fabricating 3D non-volatile storage with transistor decoding structure
Grant 8,865,535 - Rabkin , et al. October 21, 2 | 2014-10-21 |
Vertical NAND device with low capacitance and silicided word lines
Grant 8,847,302 - Alsmeier , et al. September 30, 2 | 2014-09-30 |
Vertical Bit Line Tft Decoder For High Voltage Operation
App 20140252454 - Rabkin; Peter ; et al. | 2014-09-11 |
Passive devices for 3D non-volatile memory
Grant 8,643,142 - Higashitani , et al. February 4, 2 | 2014-02-04 |
Thin Film Transistor
App 20130270568 - Rabkin; Peter ; et al. | 2013-10-17 |
3d Non-volatile Storage With Transistor Decoding Structure
App 20130272069 - Rabkin; Peter ; et al. | 2013-10-17 |
Fabricating 3d Non-volatile Storage With Transistor Decoding Structure
App 20130273700 - Rabkin; Peter ; et al. | 2013-10-17 |
Punch-through diode
Grant 8,557,654 - Rabkin , et al. October 15, 2 | 2013-10-15 |
Vertical Nand Device With Low Capacitance And Silicided Word Lines
App 20130264631 - Alsmeier; Johann ; et al. | 2013-10-10 |
Non-volatile Storage With Metal Oxide Switching Element And Methods For Fabricating The Same
App 20130234099 - Sekar; Deepak C. ; et al. | 2013-09-12 |
Trap Passivation In Memory Cell With Metal Oxide Switching Element
App 20130221311 - Sekar; Deepak C. ; et al. | 2013-08-29 |
Composition of memory cell with resistance-switching layers
Grant 8,520,424 - Kreupl , et al. August 27, 2 | 2013-08-27 |
Miiim Diode Having Lanthanum Oxide
App 20130181181 - Sekar; Deepak C. ; et al. | 2013-07-18 |
Antifuse-based Memory Cells Having Multiple Memory States And Methods Of Forming The Same
App 20130148404 - Bandyopadhyay; Abhijit ; et al. | 2013-06-13 |
Memory system with reversible resistivity-switching using pulses of alternatrie polarity
Grant 8,462,580 - Rabkin , et al. June 11, 2 | 2013-06-11 |
Method For Fabricating A Metal Silicide Interconnect In 3D Non-Volatile Memory
App 20130130495 - Higashitani; Masaaki ; et al. | 2013-05-23 |
3D Non-Volatile Memory With Metal Silicide Interconnect
App 20130126957 - Higashitani; Masaaki ; et al. | 2013-05-23 |
Method For Fabricating Passive Devices For 3D Non-Volatile Memory
App 20130130468 - Higashitani; Masaaki ; et al. | 2013-05-23 |
Passive Devices For 3D Non-Volatile Memory
App 20130127011 - Higashitani; Masaaki ; et al. | 2013-05-23 |
Non-volatile storage with metal oxide switching element and methods for fabricating the same
Grant 8,435,831 - Sekar , et al. May 7, 2 | 2013-05-07 |
Memory system with reversible resistivity-switching using pulses of alternate polarity
Grant 8,355,271 - Rabkin , et al. January 15, 2 | 2013-01-15 |
Method of forming a non-volatile memory cell using off-set spacers
Grant 8,288,219 - Rabkin , et al. October 16, 2 | 2012-10-16 |
Punch-through Diode
App 20120145984 - Rabkin; Peter ; et al. | 2012-06-14 |
Memory System With Reversible Resistivity-switching Using Pulses Of Alternatrie Polarity
App 20120120710 - Rabkin; Peter ; et al. | 2012-05-17 |
Memory System With Reversible Resistivity-switching Using Pulses Of Alternatrie Polarity
App 20120120711 - Rabkin; Peter ; et al. | 2012-05-17 |
Composition Of Memory Cell With Resistance-Switching Layers
App 20110310655 - Kreupl; Franz ; et al. | 2011-12-22 |
Non-volatile Storage With Metal Oxide Switching Element And Methods For Fabricating The Same
App 20110227026 - Sekar; Deepak C. ; et al. | 2011-09-22 |
MIIM diodes having stacked structure
Grant 7,969,011 - Sekar , et al. June 28, 2 | 2011-06-28 |
Method and apparatus for improving a circuit layout using a hierarchical layout description
Grant 7,793,238 - Rabkin , et al. September 7, 2 | 2010-09-07 |
Miim Diodes Having Stacked Structure
App 20100078759 - Sekar; Deepak C. ; et al. | 2010-04-01 |
Miim Diodes
App 20100078758 - Sekar; Deepak C. ; et al. | 2010-04-01 |
Method of Forming a Non-volatile Memory Cell Using Off-set Spacers
App 20080166844 - Rabkin; Peter ; et al. | 2008-07-10 |
Flash memory device having poly spacers
Grant 7,250,341 - Wang , et al. July 31, 2 | 2007-07-31 |
Method of Forming Transistors with Ultra-short Gate Feature
App 20070148873 - Rabkin; Peter ; et al. | 2007-06-28 |
Method of forming transistors with ultra-short gate feature
Grant 7,202,134 - Rabkin , et al. April 10, 2 | 2007-04-10 |
Method of forming polysilicon layers in non-volatile memory
Grant 7,160,774 - Rabkin , et al. January 9, 2 | 2007-01-09 |
Source side programming
Grant 7,154,141 - Wang , et al. December 26, 2 | 2006-12-26 |
Method of forming polysilicon layers in a transistor
App 20060252193 - Rabkin; Peter ; et al. | 2006-11-09 |
Flash memory device having poly spacers
App 20050186739 - Wang, Hsingya Arthur ; et al. | 2005-08-25 |
Method of forming transistors with ultra-short gate feature
App 20050142717 - Rabkin, Peter ; et al. | 2005-06-30 |
Flash memory device having poly spacers
Grant 6,911,370 - Wang , et al. June 28, 2 | 2005-06-28 |
Flash memory cell erase scheme using both source and channel regions
Grant 6,876,582 - Wang , et al. April 5, 2 | 2005-04-05 |
Method for forming transistors with ultra-short gate feature
Grant 6,849,489 - Rabkin , et al. February 1, 2 | 2005-02-01 |
Method of forming polysilicon layers
App 20040227179 - Rabkin, Peter ; et al. | 2004-11-18 |
Processes and structures for self-aligned contact non-volatile memory with peripheral transistors easily modifiable for various technologies and applications
Grant 6,818,504 - Rabkin , et al. November 16, 2 | 2004-11-16 |
Method for forming transistors with ultra-short gate feature
App 20040219755 - Rabkin, Peter ; et al. | 2004-11-04 |
Polysilicon layers structure and method of forming same
Grant 6,812,515 - Rabkin , et al. November 2, 2 | 2004-11-02 |
Non-volatile memory cells with selectively formed floating gate
Grant 6,777,741 - Rabkin , et al. August 17, 2 | 2004-08-17 |
Non-volatile memory cell with non-uniform surface floating gate and control gate
App 20040152260 - Rabkin, Peter ; et al. | 2004-08-05 |
Transistor with ultra-short gate feature and method of fabricating the same
Grant 6,746,906 - Rabkin , et al. June 8, 2 | 2004-06-08 |
Flash memory device having poly spacers
App 20030218206 - Wang, Hsingya Arthur ; et al. | 2003-11-27 |
Flash memory cell erase scheme using both source and channel regions
App 20030218912 - Wang, Hsingya A. ; et al. | 2003-11-27 |
Non-volatile memory cells with selectively formed floating gate
App 20030203571 - Rabkin, Peter ; et al. | 2003-10-30 |
Polysilicon layers structure and method of forming same
App 20030102503 - Rabkin, Peter ; et al. | 2003-06-05 |
Non-volatile memory cells with selectively formed floating gate
Grant 6,559,008 - Rabkin , et al. May 6, 2 | 2003-05-06 |
Non-volatile Memory Cells With Selectively Formed Floating Gate
App 20030068860 - Rabkin, Peter ; et al. | 2003-04-10 |
Processes and structures for self-aligned contact non-volatile memory with peripheral transistors easily modifiable for various technologies and applications
App 20030032239 - Rabkin, Peter ; et al. | 2003-02-13 |
Transistor With Ulta-short Gate Feature And Method Of Fabricating The Same
App 20020123182 - Rabkin, Peter ; et al. | 2002-09-05 |
Transistor and memory cell with ultra-short gate feature and method of fabricating the same
App 20020123180 - Rabkin, Peter ; et al. | 2002-09-05 |
Source side programming
App 20020105036 - Wang, Hsingya Arthur ; et al. | 2002-08-08 |
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