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Patent applications and USPTO patent grants for Price; J. B..The latest application filed is for "method and apparatus for semiconductor processing".
Patent | Date |
---|---|
Linear wafer drive for handling wafers during semiconductor fabrication Grant 10,163,667 - Price , et al. Dec | 2018-12-25 |
Method And Apparatus For Semiconductor Processing App 20100221915 - Price; J.B. ;   et al. | 2010-09-02 |
Modular Cluster Tool App 20080232934 - Price; J.B. ;   et al. | 2008-09-25 |
A Method And Apparatus For Semconductor Processing App 20080089774 - Price; J.B. ;   et al. | 2008-04-17 |
Method And Apparatus For Semiconductor Processing App 20080073031 - Price; J.B. ;   et al. | 2008-03-27 |
Method and apparatus for semiconductor processing App 20050194096 - Price, J.B. ;   et al. | 2005-09-08 |
Tungsten disilicide CVD Grant 4,966,869 - Hillman , et al. October 30, 1 | 1990-10-30 |
Plasma enhanced thermal treatment apparatus Grant 4,870,245 - Price , et al. September 26, 1 | 1989-09-26 |
Vacuum load lock Grant 4,861,563 - Shekerjian , et al. August 29, 1 | 1989-08-29 |
Direct wafer temperature control Grant 4,788,416 - Price , et al. November 29, 1 | 1988-11-29 |
Process for CVD of tungsten Grant 4,749,597 - Mendonca , et al. June 7, 1 | 1988-06-07 |
Silicide to silicon bonding process Grant 4,737,474 - Price , et al. April 12, 1 | 1988-04-12 |
Plasma enhanced CVD Grant 4,692,343 - Price , et al. September 8, 1 | 1987-09-08 |
CVD heat source Grant 4,640,224 - Bunch , et al. February 3, 1 | 1987-02-03 |
CVD plasma reactor Grant 4,632,057 - Price , et al. December 30, 1 | 1986-12-30 |
CVD temperature control Grant 4,632,056 - Stitz , et al. December 30, 1 | 1986-12-30 |
Titanium nitride MOS device gate electrode and method of producing Grant 4,605,947 - Price , et al. August 12, 1 | 1986-08-12 |
Method of producing titanium nitride MOS device gate electrode Grant 4,570,328 - Price , et al. February 18, 1 | 1986-02-18 |
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