loadpatents
name:-0.0068569183349609
name:-0.023277997970581
name:-0.0016341209411621
Price; J. B. Patent Filings

Price; J. B.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Price; J. B..The latest application filed is for "method and apparatus for semiconductor processing".

Company Profile
0.14.5
  • Price; J. B. - Los Gatos CA US
  • Price; J. B. - Scottsdale AZ
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Linear wafer drive for handling wafers during semiconductor fabrication
Grant 10,163,667 - Price , et al. Dec
2018-12-25
Method And Apparatus For Semiconductor Processing
App 20100221915 - Price; J.B. ;   et al.
2010-09-02
Modular Cluster Tool
App 20080232934 - Price; J.B. ;   et al.
2008-09-25
A Method And Apparatus For Semconductor Processing
App 20080089774 - Price; J.B. ;   et al.
2008-04-17
Method And Apparatus For Semiconductor Processing
App 20080073031 - Price; J.B. ;   et al.
2008-03-27
Method and apparatus for semiconductor processing
App 20050194096 - Price, J.B. ;   et al.
2005-09-08
Tungsten disilicide CVD
Grant 4,966,869 - Hillman , et al. October 30, 1
1990-10-30
Plasma enhanced thermal treatment apparatus
Grant 4,870,245 - Price , et al. September 26, 1
1989-09-26
Vacuum load lock
Grant 4,861,563 - Shekerjian , et al. August 29, 1
1989-08-29
Direct wafer temperature control
Grant 4,788,416 - Price , et al. November 29, 1
1988-11-29
Process for CVD of tungsten
Grant 4,749,597 - Mendonca , et al. June 7, 1
1988-06-07
Silicide to silicon bonding process
Grant 4,737,474 - Price , et al. April 12, 1
1988-04-12
Plasma enhanced CVD
Grant 4,692,343 - Price , et al. September 8, 1
1987-09-08
CVD heat source
Grant 4,640,224 - Bunch , et al. February 3, 1
1987-02-03
CVD plasma reactor
Grant 4,632,057 - Price , et al. December 30, 1
1986-12-30
CVD temperature control
Grant 4,632,056 - Stitz , et al. December 30, 1
1986-12-30
Titanium nitride MOS device gate electrode and method of producing
Grant 4,605,947 - Price , et al. August 12, 1
1986-08-12
Method of producing titanium nitride MOS device gate electrode
Grant 4,570,328 - Price , et al. February 18, 1
1986-02-18

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