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name:-0.030112028121948
name:-0.02419900894165
name:-0.019986867904663
Paul; Abhijeet Patent Filings

Paul; Abhijeet

Patent Applications and Registrations

Patent applications and USPTO patent grants for Paul; Abhijeet.The latest application filed is for "high-power field-effect transistor (fet)".

Company Profile
20.21.28
  • Paul; Abhijeet - Poway CA
  • PAUL; Abhijeet - Escondido CA
  • Paul; Abhijeet - Guilderland NY
  • Paul; Abhijeet - Albany NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Thermal extraction of single layer transfer integrated circuits
Grant 11,437,404 - Paul , et al. September 6, 2
2022-09-06
Low parasitic capacitance RF transistors
Grant 11,335,704 - Paul , et al. May 17, 2
2022-05-17
High-power Field-effect Transistor (fet)
App 20220093740 - PAUL; Abhijeet
2022-03-24
SLT Integrated Circuit Capacitor Structure and Methods
App 20220085079 - Paul; Abhijeet ;   et al.
2022-03-17
High density IC capacitor structure
Grant 11,276,749 - Paul March 15, 2
2022-03-15
FIELD-EFFECT TRANSISTORS (FETs) EMPLOYING EDGE TRANSISTOR CURRENT LEAKAGE SUPPRESSION TO REDUCE FET CURRENT LEAKAGE
App 20210336008 - Paul; Abhijeet ;   et al.
2021-10-28
Integrated Device Comprising Periphery Structure Configured As An Electrical Guard Ring And A Crack Stop
App 20210327826 - PAUL; Abhijeet ;   et al.
2021-10-21
SLT integrated circuit capacitor structure and methods
Grant 11,133,338 - Paul , et al. September 28, 2
2021-09-28
High Voltage Switching Device
App 20210234043 - Paul; Abhijeet ;   et al.
2021-07-29
Thermal Extraction of Single Layer Transfer Integrated Circuits
App 20210217776 - Paul; Abhijeet ;   et al.
2021-07-15
High voltage switching device
Grant 10,923,592 - Paul , et al. February 16, 2
2021-02-16
High Density IC Capacitor Structure
App 20210020736 - Paul; Abhijeet
2021-01-21
Low Leakage FET
App 20210005709 - Paul; Abhijeet ;   et al.
2021-01-07
Low Parasitic Capacitance RF Transistors
App 20200335522 - Paul; Abhijeet ;   et al.
2020-10-22
High density IC capacitor structure
Grant 10,777,636 - Paul Sept
2020-09-15
FinFET with multilayer fins for multi-value logic (MVL) applications
Grant 10,756,213 - Chi , et al. A
2020-08-25
Low leakage FET
Grant 10,756,166 - Paul , et al. A
2020-08-25
SLT Integrated Circuit Capacitor Structure and Methods
App 20200227447 - Paul; Abhijeet ;   et al.
2020-07-16
High-Q integrated circuit inductor structure and methods
Grant 10,672,806 - Paul , et al.
2020-06-02
Thermal extraction of single layer transfer integrated circuits
Grant 10,658,386 - Paul , et al.
2020-05-19
Semiconductor-on-insulator transistor with improved breakdown characteristics
Grant 10,580,903 - Yamada , et al.
2020-03-03
SLT integrated circuit capacitor structure and methods
Grant 10,573,674 - Paul , et al. Feb
2020-02-25
Low Parasitic Capacitance RF Transistors
App 20200043946 - Paul; Abhijeet ;   et al.
2020-02-06
Slt Integrated Circuit Capacitor Structure And Methods
App 20200027907 - Paul; Abhijeet ;   et al.
2020-01-23
High-Q Integrated Circuit Inductor Structure and Methods
App 20200027908 - Paul; Abhijeet ;   et al.
2020-01-23
Thermal Extraction of Single Layer Transfer Integrated Circuits
App 20200027898 - Paul; Abhijeet ;   et al.
2020-01-23
Finfet With Multilayer Fins For Multi-value Logic (mvl) Applications And Method Of Forming
App 20190326436 - CHI; Min-hwa ;   et al.
2019-10-24
Semiconductor-On-Insulator Transistor with Improved Breakdown Characteristics
App 20190288119 - Yamada; Hiroshi ;   et al.
2019-09-19
Backside Charge Control for FET Integrated Circuits
App 20190288006 - Paul; Abhijeet ;   et al.
2019-09-19
High Voltage Switching Device
App 20190288113 - Paul; Abhijeet ;   et al.
2019-09-19
FinFET with multilayer fins for multi-value logic (MVL) applications and method of forming
Grant 10,388,790 - Chi , et al. A
2019-08-20
High voltage switching device
Grant 10,319,854 - Paul , et al.
2019-06-11
High Voltage Switching Device
App 20190172948 - Paul; Abhijeet ;   et al.
2019-06-06
Low Leakage FET
App 20180366542 - Paul; Abhijeet ;   et al.
2018-12-20
Low leakage FET
Grant 10,115,787 - Paul , et al. October 30, 2
2018-10-30
Finfet With Multilayer Fins For Multi-value Logic (mvl) Applications And Method Of Forming
App 20160211375 - CHI; Min-hwa ;   et al.
2016-07-21
FinFET with multilayer fins for multi-value logic (MVL) applications and method of forming
Grant 9,362,277 - Chi , et al. June 7, 2
2016-06-07
Integrated circuits with improved source/drain contacts and methods for fabricating such integrated circuits
Grant 9,219,062 - Zeitzoff , et al. December 22, 2
2015-12-22
Methods of forming stressed fin channel structures for FinFET semiconductor devices
Grant 9,117,930 - Kamineni , et al. August 25, 2
2015-08-25
Finfet With Multilayer Fins For Multi-value Logic (mvl) Applications And Method Of Forming
App 20150228648 - CHI; Min-hwa ;   et al.
2015-08-13
Methods Of Forming Stressed Multilayer Finfet Devices With Alternative Channel Materials
App 20150126008 - Paul; Abhijeet ;   et al.
2015-05-07
Methods of forming stressed multilayer FinFET devices with alternative channel materials
Grant 9,023,705 - Paul , et al. May 5, 2
2015-05-05
FinFET channel stress using tungsten contacts in raised epitaxial source and drain
Grant 8,975,142 - Paul , et al. March 10, 2
2015-03-10
Methods Of Forming Stressed Fin Channel Structures For Finfet Semiconductor Devices
App 20150041906 - Kamineni; Vimal K. ;   et al.
2015-02-12
Integrated Circuits With Improved Source/drain Contacts And Methods For Fabricating Such Integrated Circuits
App 20140346605 - Zeitzoff; Peter ;   et al.
2014-11-27
Methods of forming stressed fin channel structures for FinFET semiconductor devices
Grant 8,889,500 - Kamineni , et al. November 18, 2
2014-11-18
Finfet Channel Stress Using Tungsten Contacts In Raised Epitaxial Source And Drain
App 20140319614 - PAUL; Abhijeet ;   et al.
2014-10-30
Methods For Fabricating Integrated Circuits With Stressed Semiconductor Material
App 20140017903 - Bello; Abner ;   et al.
2014-01-16

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