| Patent | Date |
|---|
Magnetic Memory Devices And Methods Of Formation
App 20220115439 - XUE; Lin ; et al. | 2022-04-14 |
Methods For Forming Structures For Mram Applications
App 20210351344 - TSENG; Hsin-wei ; et al. | 2021-11-11 |
Spin-orbit Torque Mram Structure And Manufacture Thereof
App 20210351342 - YUI; Minrui ; et al. | 2021-11-11 |
Methods for etching a structure for MRAM applications
Grant 11,145,808 - Kim , et al. October 12, 2 | 2021-10-12 |
Methods for forming structures for MRAM applications
Grant 11,069,853 - Tseng , et al. July 20, 2 | 2021-07-20 |
Methods for etching a structure for MRAM Applications
App 20210143323 - KIM; Jong Mun ; et al. | 2021-05-13 |
Top Buffer Layer For Magnetic Tunnel Junction Application
App 20210119119 - XUE; Lin ; et al. | 2021-04-22 |
Magnetic Tunnel Junctions With Protection Layers
App 20210111338 - XUE; Lin ; et al. | 2021-04-15 |
Top buffer layer for magnetic tunnel junction application
Grant 10,923,652 - Xue , et al. February 16, 2 | 2021-02-16 |
Top Buffer Layer For Magnetic Tunnel Junction Application
App 20200403152 - XUE; Lin ; et al. | 2020-12-24 |
Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory
Grant 10,833,254 - Park , et al. November 10, 2 | 2020-11-10 |
Spin orbit torque MRAM and manufacture thereof
Grant 10,756,259 - Ahn , et al. A | 2020-08-25 |
Dynamic memory protection
Grant 10,740,017 - Park , et al. A | 2020-08-11 |
Spin Orbit Torque Mram And Manufacture Thereof
App 20200161542 - AHN; Jaesoo ; et al. | 2020-05-21 |
Methods For Forming Structures For Mram Applications
App 20200161541 - TSENG; Hsin-wei ; et al. | 2020-05-21 |
Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data
Grant 10,636,962 - Park , et al. | 2020-04-28 |
Spin-orbit Torque (sot) Magnetic Tunnel Junction (mtj) (sot-mtj) Devices Employing Perpendicular And In-plane Free Layer Magneti
App 20200066968 - Park; Chando ; et al. | 2020-02-27 |
Message-based key generation using physical unclonable function (PUF)
Grant 10,547,460 - Wang , et al. Ja | 2020-01-28 |
Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array
Grant 10,483,457 - Lee , et al. Nov | 2019-11-19 |
Dynamic Memory Protection
App 20190332306 - PARK; Chando ; et al. | 2019-10-31 |
Parallel write scheme utilizing spin hall effect-assisted spin transfer torque random access memory
Grant 10,460,785 - Lee , et al. Oc | 2019-10-29 |
Magneto-resistive random access memory (MRAM) employing an integrated physically unclonable function (PUF) memory
Grant 10,460,780 - Kim , et al. Oc | 2019-10-29 |
Magneto-resistive Random Access Memory (mram) Employing An Integrated Physically Unclonable Function (puf) Memory
App 20190304527 - Kim; Sungryul ; et al. | 2019-10-03 |
Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory
Grant 10,431,734 - Park , et al. O | 2019-10-01 |
Engineered Barrier Layer Interface For High Speed Spin-transfer Torque Magnetic Random Access Memory
App 20190288187 - PARK; Chando ; et al. | 2019-09-19 |
High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array
Grant 10,381,060 - Kan , et al. A | 2019-08-13 |
One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations
Grant 10,311,930 - Kim , et al. | 2019-06-04 |
Dynamic memory protection
Grant 10,249,814 - Park , et al. | 2019-04-02 |
Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM)
Grant 10,134,808 - Kan , et al. November 20, 2 | 2018-11-20 |
Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
Grant 10,103,319 - Lee , et al. October 16, 2 | 2018-10-16 |
Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices
Grant 10,096,649 - Park , et al. October 9, 2 | 2018-10-09 |
Magneto-impedance (mi) Sensors Employing Current Confinement And Exchange Bias Layer(s) For Increased Sensitivity
App 20180266991 - Kan; Jimmy Jianan ; et al. | 2018-09-20 |
Self-compensation of stray field of perpendicular magnetic elements
Grant 10,043,967 - Chen , et al. August 7, 2 | 2018-08-07 |
Engineered Barrier Layer Interface For High Speed Spin-transfer Torque Magnetic Random Access Memory
App 20180212142 - PARK; Chando ; et al. | 2018-07-26 |
Message-based Key Generation Using Physical Unclonable Function (puf)
App 20180145838 - Wang; Peiyuan ; et al. | 2018-05-24 |
High Speed, Low Power Spin-orbit Torque (sot) Assisted Spin-transfer Torque Magnetic Random Access Memory (stt-mram) Bit Cell Array
App 20180061467 - KAN; Jimmy Jianan ; et al. | 2018-03-01 |
Reducing Or Avoiding Metal Deposition From Etching Magnetic Tunnel Junction (mtj) Devices, Including Magnetic Random Access Memory (mram) Devices
App 20180040668 - Park; Chando ; et al. | 2018-02-08 |
Physically unclonable function based on comparison of MTJ resistances
Grant 9,870,811 - Wang , et al. January 16, 2 | 2018-01-16 |
Physically Unclonable Function Based On Comparison Of Mtj Resistances
App 20170365316 - Wang; Peiyuan ; et al. | 2017-12-21 |
System and method to generate a random number
Grant 9,824,735 - Kan , et al. November 21, 2 | 2017-11-21 |
Magnetic tunnel junction (MTJ) device array
Grant 9,728,718 - Machkaoutsan , et al. August 8, 2 | 2017-08-08 |
Decoupling of source line layout from access transistor contact placement in a magnetic tunnel junction (MTJ) memory bit cell to facilitate reduced contact resistance
Grant 9,721,634 - Zhu , et al. August 1, 2 | 2017-08-01 |
Ultrathin Perpendicular Pinned Layer Structure For Magnetic Tunneling Junction Devices
App 20170186942 - LEE; Kangho ; et al. | 2017-06-29 |
Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) elements
Grant 9,666,792 - Chen , et al. May 30, 2 | 2017-05-30 |
Magnetic Tunnel Junction (mtj) Devices With Heterogeneous Free Layer Structure, Particularly Suited For Spin-torque-transfer (stt) Magnetic Random Access Memory (mram) (stt Mram)
App 20170125481 - Kan; Jimmy Jianan ; et al. | 2017-05-04 |
Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
Grant 9,634,237 - Lee , et al. April 25, 2 | 2017-04-25 |
Magnetic Tunnel Junction (mtj) Device Array
App 20170104153 - Machkaoutsan; Vladimir ; et al. | 2017-04-13 |
Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device
Grant 9,620,706 - Lee , et al. April 11, 2 | 2017-04-11 |
Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)
Grant 9,614,147 - Park , et al. April 4, 2 | 2017-04-04 |
Dual interface free layer with amorphous cap layer for perpendicular magnetic tunnel junction
Grant 9,601,687 - Park , et al. March 21, 2 | 2017-03-21 |
Magnetic Tunnel Junction (mtj) Devices Particularly Suited For Efficient Spin-torque-transfer (stt) Magnetic Random Access Memory (mram) (stt Mram)
App 20170077387 - Kan; Jimmy Jianan ; et al. | 2017-03-16 |
Method of fabricating smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials
Grant 9,595,666 - Gottwald , et al. March 14, 2 | 2017-03-14 |
Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer
Grant 9,590,010 - Gottwald , et al. March 7, 2 | 2017-03-07 |
Magnetic Field Enhancing Backing Plate For Mram Wafer Testing
App 20170059669 - Kan; Jimmy ; et al. | 2017-03-02 |
Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction
Grant 9,583,696 - Gottwald , et al. February 28, 2 | 2017-02-28 |
Shadow-effect Compensated Fabrication Of Magnetic Tunnel Junction (mtj) Elements
App 20170047510 - Chen; Wei-Chuan ; et al. | 2017-02-16 |
Magnetic tunnel junction (MTJ) device array
Grant 9,570,509 - Machkaoutsan , et al. February 14, 2 | 2017-02-14 |
Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ)
Grant 9,548,446 - Park , et al. January 17, 2 | 2017-01-17 |
Decoupling Of Source Line Layout From Access Transistor Contact Placement In A Magnetic Tunnel Junction (mtj) Memory Bit Cell To Facilitate Reduced Contact Resistance
App 20160315248 - Zhu; Xiaochun ; et al. | 2016-10-27 |
Smooth Seed Layers With Uniform Crystalline Texture For High Perpendicular Magnetic Anisotropy Materials
App 20160284988 - GOTTWALD; Matthias Georg ; et al. | 2016-09-29 |
Hybrid Synthetic Antiferromagnetic Layer For Perpendicular Magnetic Tunnel Junction (mtj)
App 20160276581 - PARK; Chando ; et al. | 2016-09-22 |
Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication
Grant 9,444,035 - Park , et al. September 13, 2 | 2016-09-13 |
Synthetic Antiferromagnet (saf) Coupled Free Layer For Perpendicular Magnetic Tunnel Junction (p-mtj)
App 20160233418 - PARK; Chando ; et al. | 2016-08-11 |
Magnetic Tunnel Junction (mtj) Device Array
App 20160225817 - Machkaoutsan; Vladimir ; et al. | 2016-08-04 |
Smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials
Grant 9,385,309 - Gottwald , et al. July 5, 2 | 2016-07-05 |
Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)
Grant 9,379,314 - Park , et al. June 28, 2 | 2016-06-28 |
Ultrathin Perpendicular Pinned Layer Structure For Magnetic Tunneling Junction Devices
App 20160181508 - LEE; Kangho ; et al. | 2016-06-23 |
Magnetic Etch Stop Layer For Spin-transfer Torque Magnetoresistive Random Access Memory Magnetic Tunnel Junction Device
App 20160155931 - Lee; Kangho ; et al. | 2016-06-02 |
Etch-resistant protective coating for a magnetic tunnel junction device
Grant 9,349,939 - Lu , et al. May 24, 2 | 2016-05-24 |
Replacement Conductive Hard Mask For Multi-step Magnetic Tunnel Junction (mtj) Etch
App 20160133833 - LU; Yu ; et al. | 2016-05-12 |
Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (p-MTJ)
Grant 9,324,939 - Park , et al. April 26, 2 | 2016-04-26 |
Recessed antiferromagnetic design with antiparallel pinned stitch layers for improved pinning field
Grant 9,318,133 - Freitag , et al. April 19, 2 | 2016-04-19 |
Magnesium Oxide Capping With A Shorted Path For Perpendicular Magnetic Tunnel Junction Devices
App 20160072043 - PARK; Chando ; et al. | 2016-03-10 |
Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etch
Grant 9,269,893 - Lu , et al. February 23, 2 | 2016-02-23 |
Self-compensation Of Stray Field Of Perpendicular Magnetic Elements
App 20160043304 - CHEN; Wei-Chuan ; et al. | 2016-02-11 |
Synthetic Antiferromagnet (saf) Coupled Free Layer For Perpendicular Magnetic Tunnel Junction (p-mtj)
App 20160005955 - PARK; Chando ; et al. | 2016-01-07 |
Method and system for providing a magnetic transducer having improved shield-to-shield spacing
Grant 9,214,168 - Park , et al. December 15, 2 | 2015-12-15 |
Etch-resistant Protective Coating For A Magnetic Tunnel Junction Device
App 20150340593 - Lu; Yu ; et al. | 2015-11-26 |
Magnetic Tunnel Junction And Method For Fabricating A Magnetic Tunnel Junction
App 20150311429 - LI; Xia ; et al. | 2015-10-29 |
Smooth Seed Layers With Uniform Crystalline Texture For High Perpendicular Magnetic Anisotropy Materials
App 20150311427 - GOTTWALD; Matthias Georg ; et al. | 2015-10-29 |
Spin-transfer Switching Magnetic Element Formed From Ferrimagnetic Rare-earth-transition-metal (re-tm) Alloys
App 20150303373 - CHEN; Wei-Chuan ; et al. | 2015-10-22 |
Replacement Conductive Hard Mask For Multi-step Magnetic Tunnel Junction (mtj) Etch
App 20150287910 - LU; Yu ; et al. | 2015-10-08 |
Magnetic Tunnel Junction And Method For Fabricating A Magnetic Tunnel Junction
App 20150280112 - LI; Xia ; et al. | 2015-10-01 |
Magnetic tunnel junction and method for fabricating a magnetic tunnel junction
Grant 9,142,762 - Li , et al. September 22, 2 | 2015-09-22 |
Reference Layer For Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction
App 20150263266 - Gottwald; Matthias Georg ; et al. | 2015-09-17 |
Dual Interface Free Layer With Amorphous Cap Layer For Perpendicular Magnetic Tunnel Junction
App 20150228891 - PARK; Chando ; et al. | 2015-08-13 |
Recessed Antiferromagnetic Design With Antiparallel Pinned Stitch Layers For Improved Pinning Field
App 20150179195 - Freitag; James M. ; et al. | 2015-06-25 |
Magnetic etch-stop layer for magnetoresistive read heads
Grant 9,064,507 - Pakala , et al. June 23, 2 | 2015-06-23 |
Hybrid Synthetic Antiferromagnetic Layer For Perpendicular Magnetic Tunnel Junction (mtj)
App 20150171316 - PARK; Chando ; et al. | 2015-06-18 |
Method for fabricating a magnetic recording transducer
Grant 9,003,640 - Park , et al. April 14, 2 | 2015-04-14 |
Capping Materials For Magnetic Read Head Sensor
App 20150062759 - PARK; Chando ; et al. | 2015-03-05 |
Capping materials for magnetic read head sensor
Grant 8,958,180 - Park , et al. February 17, 2 | 2015-02-17 |
Interlayer Coupled Free Layer With Out Of Plane Magnetic Orientation For Magnetic Read Head
App 20140355152 - Park; Chando ; et al. | 2014-12-04 |
Method and system for providing an improved sensor stack for a recording head
Grant 8,755,152 - Park , et al. June 17, 2 | 2014-06-17 |
Magnetic tunnel junction with barrier cooling for magnetic read head
Grant 08619394 - | 2013-12-31 |
Magnetic tunnel junction with barrier cooling for magnetic read head
Grant 8,619,394 - Park , et al. December 31, 2 | 2013-12-31 |
Magnetic etch-stop layer for magnetoresistive read heads
Grant 8,611,055 - Pakala , et al. December 17, 2 | 2013-12-17 |
Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interface
Grant 8,559,141 - Pakala , et al. October 15, 2 | 2013-10-15 |
TMR reader without DLC capping structure
Grant 8,553,371 - Zhu , et al. October 8, 2 | 2013-10-08 |
Method and system for providing a magnetic transducer having improved shield-to-shield spacing
Grant 8,537,502 - Park , et al. September 17, 2 | 2013-09-17 |
Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same
Grant 8,427,791 - Gao , et al. April 23, 2 | 2013-04-23 |
Method for providing a magnetic recording transducer
Grant 8,381,391 - Park , et al. February 26, 2 | 2013-02-26 |
Method and system for providing a read sensor having a low magnetostriction free layer
Grant 8,194,365 - Leng , et al. June 5, 2 | 2012-06-05 |
Tmr Reader Without Dlc Capping Structure
App 20120127616 - ZHU; HONGLIN ; et al. | 2012-05-24 |
Magnetic Tunnel Junction Having A Magnetic Insertion Layer And Methods Of Producing The Same
App 20120127603 - Gao; Zheng ; et al. | 2012-05-24 |
Method And System For Providing A Barrier For A Magnetoresistive Structure Utilizing Heating
App 20100328822 - PARK; CHANDO ; et al. | 2010-12-30 |
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