Pang; Liang

Patent Applications and Registrations

Patent applications and USPTO patent grants for Pang; Liang.The latest application filed is for "reducing charge loss in data memory cell adjacent to dummy memory cell".

Company Profile

5.46.30

Pang; Liang - San Jose CA
Pang; Liang - Fremont CA
Pang; Liang - Milpitas CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Non-volatile memory with reduced program speed variation Grant 10,497,711 - Baraskar , et al. De	2019-12-03
First read solution for memory Grant 10,394,649 - Alrod , et al. A	2019-08-27
First read solution for memory Grant 10,372,536 - Alrod , et al.	2019-08-06
Command sequence for first read solution for memory Grant 10,262,743 - Alrod , et al.	2019-04-16
Dynamic tuning of first read countermeasures Grant 10,157,676 - Pang , et al. Dec	2018-12-18
Select transistors with tight threshold voltage in 3D memory Grant 10,128,257 - Pang , et al. November 13, 2	2018-11-13
Reducing charge loss in data memory cell adjacent to dummy memory cell Grant 10,121,552 - Baraskar , et al. November 6, 2	2018-11-06
Reducing Charge Loss In Data Memory Cell Adjacent To Dummy Memory Cell App 20180308556 - Baraskar; Ashish ; et al.	2018-10-25
Detecting misalignment in memory array and adjusting read and verify timing parameters on sub-block and block levels Grant 10,068,657 - Yu , et al. September 4, 2	2018-09-04
Detecting Misalignment In Memory Array And Adjusting Read And Verify Timing Parameters On Sub-Block And Block Levels App 20180233206 - Yu; Xuehong ; et al.	2018-08-16
First Read Solution For Memory App 20180203763 - Alrod; Idan ; et al.	2018-07-19
First Read Solution For Memory App 20180203762 - Alrod; Idan ; et al.	2018-07-19
Forming memory cell film in stack opening Grant 10,020,314 - Baraskar , et al. July 10, 2	2018-07-10
Select Transistors With Tight Threshold Voltage In 3d Memory App 20180190667 - Pang; Liang ; et al.	2018-07-05
Block health monitoring using threshold voltage of dummy memory cells Grant 10,008,277 - Pang , et al. June 26, 2	2018-06-26
Suppressing disturb of select gate transistors during erase in memory Grant 9,984,760 - Zhang , et al. May 29, 2	2018-05-29
Non-volatile Memory With Reduced Program Speed Variation App 20180122814 - Baraskar; Ashish ; et al.	2018-05-03
Command Sequence For First Read Solution For Memory App 20180114580 - Alrod; Idan ; et al.	2018-04-26
First Read Solution For Memory App 20180113759 - Alrod; Idan ; et al.	2018-04-26
First read solution for memory Grant 9,952,944 - Alrod , et al. April 24, 2	2018-04-24
Select Transistors With Tight Threshold Voltage In 3d Memory App 20180102375 - Pang; Liang ; et al.	2018-04-12
Select transistors with tight threshold voltage in 3D memory Grant 9,941,293 - Pang , et al. April 10, 2	2018-04-10
Block Health Monitoring Using Threshold Voltage Of Dummy Memory Cells App 20180075919 - Pang; Liang ; et al.	2018-03-15
Dummy voltage to reduce first read effect in memory Grant 9,911,500 - Pang , et al. March 6, 2	2018-03-06
Non-Volatile Memory With Reduced Program Speed Variation App 20180033794 - Baraskar; Ashish ; et al.	2018-02-01
Amorphous silicon layer in memory device which reduces neighboring word line interference Grant 9,859,298 - Pang , et al. January 2, 2	2018-01-02
Amorphous Silicon Layer In Memory Device Which Reduces Neighboring Word Line Interference App 20170373086 - Pang; Liang ; et al.	2017-12-28
Dummy word line control scheme for non-volatile memory Grant 9,852,803 - Diep , et al. December 26, 2	2017-12-26
Dynamic Tuning Of First Read Countermeasures App 20170365349 - Pang; Liang ; et al.	2017-12-21
Reducing Neighboring Word Line In Interference Using Low-K Oxide App 20170345705 - Pang; Liang ; et al.	2017-11-30
Word Line-dependent And Temperature-dependent Erase Depth App 20170345470 - Pang; Liang ; et al.	2017-11-30
Reducing neighboring word line in interference using low-k oxide Grant 9,831,118 - Pang , et al. November 28, 2	2017-11-28
Word line-dependent and temperature-dependent erase depth Grant 9,830,963 - Pang , et al. November 28, 2	2017-11-28
Dummy Word Line Control Scheme For Non-volatile Memory App 20170330631 - Diep; Vinh Quang ; et al.	2017-11-16
Memory hole size variation in a 3D stacked memory Grant 9,812,462 - Pang , et al. November 7, 2	2017-11-07
Dummy Voltage To Reduce First Read Effect In Memory App 20170301403 - Pang; Liang ; et al.	2017-10-19
High conductivity channel for 3D memory Grant 9,793,283 - Pang , et al. October 17, 2	2017-10-17
Equalizing erase depth in different blocks of memory cells Grant 9,786,378 - Zhang , et al. October 10, 2	2017-10-10
Three-dimensional memory device with select transistor having charge trapping gate dielectric layer and methods of making and operating thereof Grant 9,748,266 - Baraskar , et al. August 29, 2	2017-08-29
Dynamic tuning of first read countermeasures Grant 9,715,937 - Pang , et al. July 25, 2	2017-07-25
Method of forming memory cell film Grant 9,673,216 - Baraskar , et al. June 6, 2	2017-06-06
Alternating refractive index in charge-trapping film in three-dimensional memory Grant 9,666,593 - Pang , et al. May 30, 2	2017-05-30
Word line ramping down scheme to purge residual electrons Grant 9,620,233 - Dong , et al. April 11, 2	2017-04-11
Weak erase prior to read Grant 9,607,707 - Pang , et al. March 28, 2	2017-03-28
Method and apparatus for refresh programming of memory cells based on amount of threshold voltage downshift Grant 9,595,342 - Pang , et al. March 14, 2	2017-03-14
Word line-dependent and temperature-dependent pass voltage during programming Grant 9,583,198 - Pang , et al. February 28, 2	2017-02-28
Three-dimensional memory structure having self-aligned drain regions and methods of making thereof Grant 9,543,320 - Pang , et al. January 10, 2	2017-01-10
Selective removal of charge-trapping layer for select gate transistor and dummy memory cells in 3D stacked memory Grant 9,490,262 - Pang , et al. November 8, 2	2016-11-08
Selective Removal Of Charge-Trapping Layer For Select Gate Transistor And Dummy Memory Cells In 3D Stacked Memory App 20160307915 - Pang; Liang ; et al.	2016-10-20
Word line-dependent ramping of pass voltage and program voltage for three-dimensional memory Grant 9,466,369 - Pang , et al. October 11, 2	2016-10-11
Word line dependent channel pre-charge for memory Grant 9,460,805 - Pang , et al. October 4, 2	2016-10-04
Programming memory with reduced short-term charge loss Grant 9,437,305 - Lu , et al. September 6, 2	2016-09-06
Contact for vertical memory with dopant diffusion stopper and associated fabrication method Grant 9,406,690 - Pang , et al. August 2, 2	2016-08-02
Selective removal of charge-trapping layer for select gate transistors and dummy memory cells in 3D stacked memory Grant 9,406,693 - Pang , et al. August 2, 2	2016-08-02
Method And Apparatus For Refresh Programming Of Memory Cells Based On Amount Of Threshold Voltage Downshift App 20160211032 - Pang; Liang ; et al.	2016-07-21
Contact For Vertical Memory With Dopant Diffusion Stopper And Associated Fabrication Method App 20160172368 - Pang; Liang ; et al.	2016-06-16
Three-dimensional memory structure having self-aligned drain regions and methods of making thereof Grant 9,368,509 - Pang , et al. June 14, 2	2016-06-14
Read with look-back combined with programming with asymmetric boosting in memory Grant 9,349,478 - Yuan , et al. May 24, 2	2016-05-24
Reprogramming memory with single program pulse per data state Grant 9,343,141 - Pang , et al. May 17, 2	2016-05-17
Avoiding unintentional program or erase of a select gate transistor Grant 9,343,159 - Dong , et al. May 17, 2	2016-05-17
Multiple pass programming for memory with different program pulse widths Grant 9,324,419 - Pang , et al. April 26, 2	2016-04-26
Three-dimensional Memory Structure Having Self-aligned Drain Regions And Methods Of Making Thereof App 20160111435 - Pang; Liang ; et al.	2016-04-21
Three-dimensional Memory Structure Having Self-aligned Drain Regions And Methods Of Making Thereof App 20160111437 - PANG; Liang ; et al.	2016-04-21
Read With Look-Back Combined With Programming With Asymmetric Boosting In Memory App 20160093390 - Yuan; Jiahui ; et al.	2016-03-31
Modifying Program Pulses Based On Inter-pulse Period To Reduce Program Noise App 20160093380 - Dong; Yingda ; et al.	2016-03-31
Alternating Refractive Index In Charge-Trapping Film In Three-Dimensional Memory App 20160093636 - Pang; Liang ; et al.	2016-03-31
Adaptive increase in control gate voltage of a dummy memory cell to compensate for inadvertent programming Grant 9,299,450 - Pang , et al. March 29, 2	2016-03-29
Modifying program pulses based on inter-pulse period to reduce program noise Grant 9,299,443 - Dong , et al. March 29, 2	2016-03-29
Programming Memory With Reduced Short-Term Charge Loss App 20160064084 - Lu; Ching-Huang ; et al.	2016-03-03
Avoiding Unintentional Program Or Erase Of A Select Gate Transistor App 20160055915 - Dong; Yingda ; et al.	2016-02-25
Multiple Pass Programming For Memory With Different Program Pulse Widths App 20160019947 - Pang; Liang ; et al.	2016-01-21
Reprogramming Memory With Single Program Pulse Per Data State App 20160019948 - Pang; Liang ; et al.	2016-01-21
Programming memory with reduced short-term charge loss Grant 9,230,663 - Lu , et al. January 5, 2	2016-01-05
Weak erase of a dummy memory cell to counteract inadvertent programming Grant 9,230,676 - Pang , et al. January 5, 2	2016-01-05
Efficient Reprogramming Method For Tightening A Threshold Voltage Distribution In A Memory Device App 20150325297 - Pang; Liang ; et al.	2015-11-12
Efficient reprogramming method for tightening a threshold voltage distribution in a memory device Grant 9,165,659 - Pang , et al. October 20, 2	2015-10-20

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