Patent applications and USPTO patent grants for Pak; James.The latest application filed is for "method of forming high-voltage transistor with thin gate poly".
Patent | Date |
---|---|
Memory first process flow and device Grant 11,342,429 - Fang , et al. May 24, 2 | 2022-05-24 |
Method of Forming High-Voltage Transistor with Thin Gate Poly App 20210296343 - Chen; Chun ;   et al. | 2021-09-23 |
Embedded Non-volatile Memory Device And Fabrication Method Of The Same App 20210134811 - Chen; Chun ;   et al. | 2021-05-06 |
Memory First Process Flow and Device App 20210091198 - Fang; Shenqing ;   et al. | 2021-03-25 |
Method of reducing charge loss in non-volatile memories Grant 10,957,703 - Singh , et al. March 23, 2 | 2021-03-23 |
Embedded non-volatile memory device and fabrication method of the same Grant 10,872,898 - Chen , et al. December 22, 2 | 2020-12-22 |
Memory first process flow and device Grant 10,818,761 - Fang , et al. October 27, 2 | 2020-10-27 |
Non-volatile memory device and method of blank check Grant 10,679,712 - Pak , et al. | 2020-06-09 |
Memory First Process Flow and Device App 20190386109 - Fang; Shenqing ;   et al. | 2019-12-19 |
Split-gate flash cell formed on recessed substrate Grant 10,497,710 - Kang , et al. De | 2019-12-03 |
Method of Forming High-Voltage Transistor with Thin Gate Poly App 20190304990 - Chen; Chun ;   et al. | 2019-10-03 |
Memory first process flow and device Grant 10,403,731 - Fang , et al. Sep | 2019-09-03 |
Non-volatile Memory Device And Method Of Blank Check App 20190198125 - Pak; James ;   et al. | 2019-06-27 |
Method of forming high-voltage transistor with thin gate poly Grant 10,242,996 - Chen , et al. | 2019-03-26 |
Method Of Reducing Charge Loss In Non-volatile Memories App 20190074286 - Singh; Pawan Kishore ;   et al. | 2019-03-07 |
Method of Forming High-Voltage Transistor with Thin Gate Poly App 20190027487 - Chen; Chun ;   et al. | 2019-01-24 |
Embedded Non-volatile Memory Device And Fabrication Method Of The Same App 20190027484 - Chen; Chun ;   et al. | 2019-01-24 |
Memory First Process Flow and Device App 20180366551 - Fang; Shenqing ;   et al. | 2018-12-20 |
Method of reducing charge loss in non-volatile memories Grant 10,068,912 - Singh , et al. September 4, 2 | 2018-09-04 |
Memory first process flow and device Grant 10,014,380 - Fang , et al. July 3, 2 | 2018-07-03 |
Split-Gate Flash Cell formed on Recessed Substrate App 20180166458 - Kang; Sung-Taeg ;   et al. | 2018-06-14 |
Memory first process flow and device Grant 9,917,166 - Fang , et al. March 13, 2 | 2018-03-13 |
Split-gate flash cell formed on recessed substrate Grant 9,853,039 - Kang , et al. December 26, 2 | 2017-12-26 |
Memory First Process Flow and Device App 20170141201 - Fang; Shenqing ;   et al. | 2017-05-18 |
Memory First Process Flow and Device App 20160293720 - Fang; Shenqing ;   et al. | 2016-10-06 |
Memory first process flow and device Grant 9,368,606 - Fang , et al. June 14, 2 | 2016-06-14 |
Memory First Process Flow and Device App 20140167140 - FANG; Shenqing ;   et al. | 2014-06-19 |
Charge Trapping Device with Improved Select Gate to Memory Gate Isoloation App 20140167136 - RAMSBEY; Mark ;   et al. | 2014-06-19 |
Adaptively programming or erasing flash memory blocks Grant 8,724,388 - Neo , et al. May 13, 2 | 2014-05-13 |
Adaptively Programming or Erasing Flash Memory Blocks App 20130258775 - NEO; Tio Wei ;   et al. | 2013-10-03 |
Arrangement and method for detecting sequential processing effects in manufacturing using predetermined sequences within runs Grant 5,930,138 - Lin , et al. July 27, 1 | 1999-07-27 |
Arrangement and method for detecting sequential processing effects in manufacturing using predetermined sequences within runs Grant 5,716,856 - Lin , et al. February 10, 1 | 1998-02-10 |
SEC | 0001418716 | PAK JAMES |
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