OYAMATSU; Hisato

Patent Applications and Registrations

Patent applications and USPTO patent grants for OYAMATSU; Hisato.The latest application filed is for "memory device and memory system".

Company Profile

0.32.30

OYAMATSU; Hisato - Seoul KR
OYAMATSU; Hisato - Yokohama-shi JP
Oyamatsu; Hisato - Yokohama JP
Oyamatsu; Hisato - Kanagawa-ken JP
Oyamatsu; Hisato - Tokyo JP
Oyamatsu; Hisato - Kawasaki JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Memory Device And Memory System App 20170249210 - OYAMATSU; Hisato	2017-08-31
Magnetic Memory Device App 20150228695 - KOBAYASHI; Shinya ; et al.	2015-08-13
Magnetic memory device Grant 9,041,130 - Kobayashi , et al. May 26, 2	2015-05-26
Magnetic Memory Device App 20150069546 - KOBAYASHI; Shinya ; et al.	2015-03-12
Manufacturing system for semiconductor device capable of controlling variation in electrical property of element in wafer surface and method for manufacturing the semiconductor device Grant 8,735,181 - Fujii , et al. May 27, 2	2014-05-27
Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same Grant RE42,180 - Oyamatsu , et al. March 1, 2	2011-03-01
Semiconductor device having channel with cooling fluid and manufacturing method thereof Grant 7,741,159 - Oyamatsu June 22, 2	2010-06-22
Semiconductor Device And Manufacturing Method Thereof App 20090269904 - OYAMATSU; Hisato	2009-10-29
Cooling semiconductor device and manufacturing method thereof Grant 7,569,931 - Oyamatsu August 4, 2	2009-08-04
Manufacturing System For Semiconductor Device Capable Of Controlling Variation In Electrical Property Of Element In Wafer Surface And Method For Manufacturing The Semiconductor Device App 20090114853 - FUJII; Osamu ; et al.	2009-05-07
Semiconductor device substrate including a single-crystalline layer and method of manufacturing semiconductor device substrate Grant 7,521,300 - Nagano , et al. April 21, 2	2009-04-21
Semiconductor device using partial SOI substrate and manufacturing method thereof Grant 7,439,112 - Nagano , et al. October 21, 2	2008-10-21
Semiconductor Integrated Circuit Device App 20070267680 - Uchino; Yukinori ; et al.	2007-11-22
Semiconductor device and manufacturing method thereof App 20070117306 - Oyamatsu; Hisato	2007-05-24
Semiconductor device comprising multiple layers with trenches formed on a semiconductor substrate Grant 7,187,035 - Nagano , et al. March 6, 2	2007-03-06
Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same Grant 7,176,536 - Oyamatsu , et al. February 13, 2	2007-02-13
Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions Grant 7,148,543 - Yamada , et al. December 12, 2	2006-12-12
Semiconductor device using partial SOI substrate and manufacturing method thereof App 20060273330 - Nagano; Hajime ; et al.	2006-12-07
Semiconductor device substrate and method of manufacturing semiconductor device substrate App 20060234478 - Nagano; Hajime ; et al.	2006-10-19
Semiconductor device using partial SOI substrate and manufacturing method thereof Grant 7,112,822 - Nagano , et al. September 26, 2	2006-09-26
Semiconductor device having patterned SOI structure and method for fabricating the same Grant 7,098,146 - Oyamatsu August 29, 2	2006-08-29
Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the same Grant 7,018,904 - Yamada , et al. March 28, 2	2006-03-28
Semiconductor device having one of patterned SOI and SON structure Grant 6,906,384 - Yamada , et al. June 14, 2	2005-06-14
Semiconductor device having patterned SOI structure and method for fabricating the same App 20050121722 - Oyamatsu, Hisato	2005-06-09
Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same App 20050106833 - Oyamatsu, Hisato ; et al.	2005-05-19
Semiconductor device using partial SOI substrate and manufacturing method thereof App 20050093066 - Nagano, Hajime ; et al.	2005-05-05
Semiconductor device having patterned SOI structure and method for fabricating the same Grant 6,861,374 - Oyamatsu March 1, 2	2005-03-01
Semiconductor device using partial SOI substrate and manufacturing method thereof Grant 6,855,976 - Nagano , et al. February 15, 2	2005-02-15
Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the same App 20050019999 - Yamada, Takashi ; et al.	2005-01-27
Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions Grant 6,835,981 - Yamada , et al. December 28, 2	2004-12-28
Semiconductor device with an improved gate electrode pattern and a method of manufacturing the same Grant 6,833,301 - Oyamatsu December 21, 2	2004-12-21
Method for manufacturing multilayer wiring structure semiconductor device Grant 6,828,222 - Oyamatsu December 7, 2	2004-12-07
Semiconductor device App 20040227206 - Oyamatsu, Hisato	2004-11-18
Method of manufacturing a semiconductor device including a plurality of kinds of MOS transistors having different gate widths Grant 6,815,280 - Oyamatsu November 9, 2	2004-11-09
Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions App 20040195626 - Yamada, Takashi ; et al.	2004-10-07
Semiconductor device having patterned SOI structure and method for fabricating the same App 20040169226 - Oyamatsu, Hisato	2004-09-02
Semiconductor device including a plurality of kinds of MOS transistors and method of manufacturing the same App 20040169235 - Oyamatsu, Hisato	2004-09-02
Semiconductor device Grant 6,768,182 - Oyamatsu July 27, 2	2004-07-27
Semiconductor device including a plurality of kinds of MOS transistors having different gate widths and method of manufacturing the same Grant 6,734,506 - Oyamatsu May 11, 2	2004-05-11
Semiconductor device having patterned SOI structure and method for fabricating the same Grant 6,724,046 - Oyamatsu April 20, 2	2004-04-20
Semiconductor device with an improved gate electrode pattern and a method of manufacturing the same App 20040029327 - Oyamatsu, Hisato	2004-02-12
Semiconductor device with an improved gate electrode pattern Grant 6,653,695 - Oyamatsu November 25, 2	2003-11-25
Semiconductor device having one of patterned SOI and SON structure App 20030201512 - Yamada, Takashi ; et al.	2003-10-30
Semiconductor device and method for manufacturing same App 20030197275 - Oyamatsu, Hisato	2003-10-23
Semiconductor device having one of patterned SOI and SON structure App 20030151112 - Yamada, Takashi ; et al.	2003-08-14
Semiconductor device and method for manufacturing same Grant 6,593,654 - Oyamatsu July 15, 2	2003-07-15
Semiconductor device using partial SOI substrate and manufacturing method thereof App 20030122124 - Nagano, Hajime ; et al.	2003-07-03
Semiconductor device having patterned SOI structure and method for fabricating the same App 20030119228 - Oyamatsu, Hisato	2003-06-26
Semiconductor wafer, method of manufacturing the same and semiconductor device App 20030102530 - Matsumoto, Masahiko ; et al.	2003-06-05
Semiconductor device including a plurality of kinds of MOS transistors and method of manufacturing the same App 20030071279 - Oyamatsu, Hisato	2003-04-17
Semiconductor chip having multiple functional blocks integrated in a single chip and method forfabricating the same App 20030057487 - Yamada, Takashi ; et al.	2003-03-27
Semiconductor device substrate and method of manufacturing semiconductor device substrate App 20030057490 - Nagano, Hajime ; et al.	2003-03-27
Semiconductor Device And Method For Manufacturing Same App 20020070455 - OYAMATSU, HISATO	2002-06-13
A Semiconductor Device With An Improved Gate Electrode Pattern And A Method Of Manufacturing The Same App 20020030236 - OYAMATSU, HISATO	2002-03-14
Semiconductor device App 20020024112 - Oyamatsu, Hisato	2002-02-28
N-channel MOSFET having STI structure and method for manufacturing the same Grant 6,261,920 - Oyamatsu July 17, 2	2001-07-17
Semiconductor apparatus and manufacturing method therefor Grant 6,204,539 - Oyamatsu March 20, 2	2001-03-20
Semiconductor device having structure suitable for CMP process Grant 6,091,130 - Oyamatsu , et al. July 18, 2	2000-07-18
Method for manufacturing a semiconductor device having a limited pocket region Grant 5,923,969 - Oyamatsu July 13, 1	1999-07-13
Method of fabricating semiconductor device Grant 5,512,500 - Oyamatsu April 30, 1	1996-04-30
Method for manufacturing MOSFET having an LDD structure Grant 5,424,229 - Oyamatsu June 13, 1	1995-06-13

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