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Ferroelectric Memory and Semiconductor Memory App 20080285327 - Ogiwara; Ryu ;   et al. | 2008-11-20 |
MIS transistor and method for producing same Grant 7,303,965 - Oowaki , et al. December 4, 2 | 2007-12-04 |
Chain ferroelectric random access memory (CFRAM) having an intrinsic transistor connected in parallel with a ferroelectric capacitor Grant 7,295,456 - Ogiwara , et al. November 13, 2 | 2007-11-13 |
Semiconductor device adapted to minimize clock skew Grant 7,236,035 - Shiratake , et al. June 26, 2 | 2007-06-26 |
Semiconductor device and system App 20060271799 - Shiratake; Shinichiro ;   et al. | 2006-11-30 |
Ferroelectric Memory and Semiconductor Memory App 20060193162 - Ogiwara; Ryu ;   et al. | 2006-08-31 |
Ferroelectric memory with an intrinsic access transistor coupled to a capacitor Grant 7,057,917 - Ogiwara , et al. June 6, 2 | 2006-06-06 |
Semiconductor device adapted to minimize clock skew App 20060061401 - Shiratake; Shinichiro ;   et al. | 2006-03-23 |
Series connected TC unit type ferroelectric RAM and test method thereof Grant 6,993,691 - Ogiwara , et al. January 31, 2 | 2006-01-31 |
Ferroelectric memory Grant 6,906,944 - Takeuchi , et al. June 14, 2 | 2005-06-14 |
Ferroelectric memory and semiconductor memory App 20040136225 - Ogiwara, Ryu ;   et al. | 2004-07-15 |
Ferroelectric memory App 20040062115 - Takeuchi, Yoshiaki ;   et al. | 2004-04-01 |
MIS transistor having a large driving current and method for producing the same Grant 6,690,047 - Oowaki , et al. February 10, 2 | 2004-02-10 |
Ferroelectric random access memory with isolation transistors coupled between a sense amplifier and an equalization circuit Grant 6,671,200 - Ogiwara , et al. December 30, 2 | 2003-12-30 |
Ferroelectric memory having a device responsive to current lowering Grant 6,643,162 - Takeuchi , et al. November 4, 2 | 2003-11-04 |
Ferroelectric random access memory Grant 6,611,450 - Oowaki , et al. August 26, 2 | 2003-08-26 |
Ferroelectric memory and semiconductor memory App 20030128572 - Ogiwara, Ryu ;   et al. | 2003-07-10 |
Chain-type ferroelectric random access memory (FRAM) with rewrite transistors coupled between a sense amplifier and a bit line pair Grant 6,552,922 - Ogiwara , et al. April 22, 2 | 2003-04-22 |
Ferroelectric memory having memory cell array accessibility safeguards Grant 6,510,071 - Oowaki January 21, 2 | 2003-01-21 |
Ferroelectric memory and semiconductor memory App 20020196656 - Ogiwara, Ryu ;   et al. | 2002-12-26 |
Series connected TC unit type ferroelectric RAM and test method thereof App 20020188893 - Ogiwara, Ryu ;   et al. | 2002-12-12 |
Chain type ferroelectric memory with isolation transistors coupled between a sense amplifier and an equalization circuit Grant 6,473,330 - Ogiwara , et al. October 29, 2 | 2002-10-29 |
Ferroelectric random access memory App 20020122328 - Oowaki, Yukihito ;   et al. | 2002-09-05 |
MIS transistor having a large driving current and method for producing the same App 20020117725 - Oowaki, Yukihito ;   et al. | 2002-08-29 |
Random access memory with divided memory banks and data read/write architecture therefor App 20020089891 - Oowaki, Yukihito | 2002-07-11 |
Semiconductor integrated circuit Grant 6,392,467 - Oowaki , et al. May 21, 2 | 2002-05-21 |
Apparatus comprising clock control circuit and device using internal clock signal synchronized to external clock signal Grant 6,393,080 - Kamoshida , et al. May 21, 2 | 2002-05-21 |
Semiconductor memory device App 20020056878 - Oowaki, Yukihito ;   et al. | 2002-05-16 |
Clock control circuit Grant 6,388,484 - Kamoshida , et al. May 14, 2 | 2002-05-14 |
Ferroelectric memory device App 20020044477 - Takeuchi, Yoshiaki ;   et al. | 2002-04-18 |
Semiconductor memory device App 20020034091 - Miyakawa, Tadashi ;   et al. | 2002-03-21 |
Random Access Memory With Divided Memory Banks And Data Read/write Architecture Therefor App 20020031037 - Oowaki, Yukihito | 2002-03-14 |
Semiconductor Memory Device Using Ferroelectric Film App 20020024838 - Takeuchi, Yoshiaki ;   et al. | 2002-02-28 |
Configurable integrated circuit and method of testing the same Grant 6,349,395 - Ohuchi , et al. February 19, 2 | 2002-02-19 |
Configurable Integrated Circuit And Method Of Testing The Same App 20020010885 - OHUCHI, KAZUNORI ;   et al. | 2002-01-24 |
MISFET semiconductor device having relative impurity concentration levels between layers Grant 6,323,525 - Noguchi , et al. November 27, 2 | 2001-11-27 |
MIS transistor and method for producing same App 20010030350 - Oowaki, Yukihito ;   et al. | 2001-10-18 |
Ferroelectric memory App 20010022741 - Takeuchi, Yoshiaki ;   et al. | 2001-09-20 |
Ferroelectric memory App 20010021120 - Oowaki, Yukihito | 2001-09-13 |
MIS transistor having a large driving current and method for producing the same Grant 6,278,165 - Oowaki , et al. August 21, 2 | 2001-08-21 |
Semiconductor integrated circuit device Grant 6,177,811 - Fuse , et al. January 23, 2 | 2001-01-23 |
Processor and information processing apparatus with a reconfigurable circuit Grant 6,157,997 - Oowaki , et al. December 5, 2 | 2000-12-05 |
Semiconductor memory device Grant 6,130,461 - Oowaki , et al. October 10, 2 | 2000-10-10 |
Electronic circuit apparatus having circuits for effectively compensating for clock skew Grant 6,124,744 - Oowaki September 26, 2 | 2000-09-26 |
Semiconductor integrated circuit having suppressed leakage currents Grant 6,087,893 - Oowaki , et al. July 11, 2 | 2000-07-11 |
Semiconductor device Grant 6,040,610 - Noguchi , et al. March 21, 2 | 2000-03-21 |
Semiconductor memory device such as a DRAM capable of holding data without refresh Grant 5,953,246 - Takashima , et al. September 14, 1 | 1999-09-14 |
Semiconductor memory device having a multilayered bitline structure with respective wiring layers for reading and writing data Grant 5,933,380 - Tsuchida , et al. August 3, 1 | 1999-08-03 |
NAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit lines Grant 5,892,724 - Hasegawa , et al. April 6, 1 | 1999-04-06 |
Integrated circuit with stacked sub-circuits between Vcc and ground so as to conserve power and reduce the voltage across any one transistor Grant 5,867,040 - Fuse , et al. February 2, 1 | 1999-02-02 |
Dynamic random-access memory with high-speed word-line driver circuit Grant 5,864,508 - Takashima , et al. January 26, 1 | 1999-01-26 |
Dynamic semiconductor memory device having an improved sense amplifier layout arrangement Grant 5,859,805 - Takashima , et al. January 12, 1 | 1999-01-12 |
Semiconductor memory device including a plurality of dynamic memory cells connected in series Grant 5,831,928 - Nakano , et al. November 3, 1 | 1998-11-03 |
Semiconductor memory device having folded bit line array and an open bit line array with imbalance correction Grant 5,761,109 - Takashima , et al. June 2, 1 | 1998-06-02 |
Semiconductor memory device using dynamic type memory cells Grant 5,661,678 - Yoshida , et al. August 26, 1 | 1997-08-26 |
Semiconductor memory device with reduced read time and power consumption Grant 5,654,912 - Hasegawa , et al. August 5, 1 | 1997-08-05 |
Dynamic random access memory with variable sense-amplifier drive capacity Grant 5,590,080 - Hasagawa , et al. December 31, 1 | 1996-12-31 |
Integrated semiconductor memory with internal voltage booster of lesser dependency on power supply voltage Grant 5,499,209 - Oowaki , et al. March 12, 1 | 1996-03-12 |
Random access memory with divided memory banks and data read/write architecture therefor Grant 5,497,351 - Oowaki March 5, 1 | 1996-03-05 |
Semiconductor memory Grant 5,463,577 - Oowaki , et al. October 31, 1 | 1995-10-31 |
Integrated semiconductor memory with internal voltage booster of lesser dependency on power supply voltage Grant 5,307,315 - Oowaki , et al. April 26, 1 | 1994-04-26 |
Dynamic semiconductor memory device with twisted bit-line structure Grant 5,144,583 - Oowaki , et al. September 1, 1 | 1992-09-01 |
MOS type random access memory with interference noise eliminator Grant 5,062,079 - Tsuchida , et al. October 29, 1 | 1991-10-29 |