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Memory Device
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Electrode structure to improve RRAM performance
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Memory device
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Electrode structure to improve RRAM performance
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Semiconductor device and manufacturing method thereof
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RRAM-based monotonic counter
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Memory circuit and formation method thereof
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Memory circuit and formation method thereof
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Semiconductor Device And Manufacturing Method Thereof
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Memory Device
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Semiconductor device and manufacturing method thereof
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Memory device
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Electrode Structure To Improve Rram Performance
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Electrode Structure To Improve Rram Performance
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Rram-based Monotonic Counter
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Memory Circuit And Formation Method Thereof
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Memory Circuit And Formation Method Thereof
App 20200020744 - Tsai; Chun-Yang ; et al. | 2020-01-16 |
Electrode structure to improve RRAM performance
Grant 10,516,106 - Chu , et al. Dec | 2019-12-24 |
RRAM-based monotonic counter
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Memory circuit and formation method thereof
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Memory Device
App 20190123264 - Chuang; Harry-Hak-Lay ; et al. | 2019-04-25 |
Semiconductor Device And Manufacturing Method Thereof
App 20190103493 - TU; Kuo-Chi ; et al. | 2019-04-04 |
Semiconductor device including memory and logic circuit having FETs with ferroelectric layer and manufacturing methods thereof
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Memory Circuit And Formation Method Thereof
App 20190058007 - Tsai; Chun-Yang ; et al. | 2019-02-21 |
Rram-based Monotonic Counter
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Electrode Structure To Improve Rram Performance
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Memory device having a single bottom electrode layer
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Semiconductor Device And Manufacturing Method Thereof
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Memory Device Having A Single Bottom Electrode Layer
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RRAM retention by depositing Ti capping layer before HK HfO
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RRAM RETENTION BY DEPOSITING Ti CAPPING LAYER BEFORE HK HfO
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Contactless Communications Using Ferromagnetic Material
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Multi-trapping layer flash memory cell
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Contactless communications using ferromagnetic material
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Flash memory cells having leakage-inhibition layers
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Contactless Communications Using Ferromagnetic Material
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Program/erase schemes for floating gate memory cells
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One-time-programmable anti-fuse formed using damascene process
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Flash Memory Cells Having Leakage-Inhibition Layers
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Flash memory with deep quantum well and high-K dielectric
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Electrostatic discharge protection device having light doped regions
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Cross-talk reduction through deep pixel well implant for image sensors
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Program/erase schemes for floating gate memory cells
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Multi-trapping layer flash memory cell
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One-time-programmable anti-fuse formed using damascene process
App 20080012138 - Wang; Ming-Tsong ; et al. | 2008-01-17 |
Flash memory with deep quantum well and high-K dielectric
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Semiconductor devices with reduced impact from alien particles
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Placement and routing method to reduce Joule heating
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Semiconductor devices with reduced impact from alien particles
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Electrostatic discharge protection device and method for its manufacture
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Mixed implantation on polysilicon fuse for CMOS technology
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Placement and routing method to reduce Joule heating
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Single layer wiring bond pad with optimum AL film thickness in Cu/FSG process for devices under pads
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Microelectronic fabrication with upper lying aluminum fuse layer in copper interconnect semiconductor technology and method for fabrication thereof
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