Nakahata; Seiji

Patent Applications and Registrations

Patent applications and USPTO patent grants for Nakahata; Seiji.The latest application filed is for "group iii nitride composite substrate and method for manufacturing the same, and method for manufacturing group iii nitride semi".

Company Profile

3.91.111

Nakahata; Seiji - Itami JP
NAKAHATA; Seiji - Itami-shi JP
Nakahata; Seiji - Hyogo JP
Nakahata; Seiji - Hyogoi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Gallium nitride substrate Grant 10,837,124 - Kiyama , et al. November 17, 2	2020-11-17
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, And Method For Manufacturing Group Iii Nitride Semi App 20200176305 - ISHIBASHI; Keiji ; et al.	2020-06-04
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device Grant 10,600,676 - Ishibashi , et al.	2020-03-24
Gallium Nitride Substrate App 20200032419 - KIYAMA; Makoto ; et al.	2020-01-30
Gallium nitride substrate Grant 10,458,043 - Kiyama , et al. Oc	2019-10-29
Gallium nitride substrate Grant 10,443,151 - Kiyama , et al. Oc	2019-10-15
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same Grant 10,078,059 - Ishibashi , et al. September 18, 2	2018-09-18
Gallium Nitride Substrate App 20180237946 - KIYAMA; Makoto ; et al.	2018-08-23
Gallium nitride substrate Grant 10,006,147 - Kiyama , et al. June 26, 2	2018-06-26
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, And Method For Manufacturing Group Iii Nitride Semiconductor Device App 20180166325 - ISHIBASHI; Keiji ; et al.	2018-06-14
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device Grant 9,917,004 - Ishibashi , et al. March 13, 2	2018-03-13
Gallium Nitride Substrate App 20170137966 - KIYAMA; Makoto ; et al.	2017-05-18
Nitride Crystal, Nitride Crystal Substrate, Epilayer-containing Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same App 20170115239 - ISHIBASHI; Keiji ; et al.	2017-04-27
Gallium Nitride Substrate App 20170101724 - KIYAMA; Makoto ; et al.	2017-04-13
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same Grant 9,570,540 - Ishibashi , et al. February 14, 2	2017-02-14
Group III nitride crystal substrates and group III nitride crystal Grant 9,368,568 - Uematsu , et al. June 14, 2	2016-06-14
Composite substrate Grant 9,252,207 - Maeda , et al. February 2, 2	2016-02-02
Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same Grant 9,136,337 - Ishibashi , et al. September 15, 2	2015-09-15
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, And Method For Manufacturing Group Iii Nitride Semiconductor Device App 20150194442 - Ishibashi; Keiji ; et al.	2015-07-09
Composite of III-nitride crystal on laterally stacked substrates Grant 9,064,706 - Mizuhara , et al. June 23, 2	2015-06-23
Composite of III-Nitride Crystal on Laterally Stacked Substrates App 20150008563 - Mizuhara; Naho ; et al.	2015-01-08
Group III Nitride Crystal Substrates and Group III Nitride Crystal App 20140369920 - Uematsu; Koji ; et al.	2014-12-18
Nitride Crystal, Nitride Crystal Substrate, Epilayer-containing Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same App 20140349112 - ISHIBASHI; Keiji ; et al.	2014-11-27
Composite of III-nitride crystal on laterally stacked substrates Grant 8,872,309 - Mizuhara , et al. October 28, 2	2014-10-28
III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrate Grant 8,845,992 - Okahisa , et al. September 30, 2	2014-09-30
Method for producing group III nitride crystal Grant 8,847,363 - Uematsu , et al. September 30, 2	2014-09-30
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same Grant 8,828,140 - Ishibashi , et al. September 9, 2	2014-09-09
GaN single crystal substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1) Grant 8,823,142 - Fujiwara , et al. September 2, 2	2014-09-02
Prepared and stored GaN substrate Grant 8,772,787 - Ijiri , et al. July 8, 2	2014-07-08
Composite of III-Nitride Crystal on Laterally Stacked Substrates App 20140175616 - Mizuhara; Naho ; et al.	2014-06-26
Method of manufacturing III-nitride crystal Grant 8,709,923 - Mizuhara , et al. April 29, 2	2014-04-29
Composite Substrate App 20140103358 - Maeda; Yoko ; et al.	2014-04-17
Group Iii Nitride Composite Substrate And Method For Manufacturing The Same, Laminated Group Iii Nitride Composite Substrate, And Group Iii Nitride Semiconductor Device And Method For Manufacturing The Same App 20140103353 - ISHIBASHI; Keiji ; et al.	2014-04-17
GaN Single Crystal Substrate and Method of Manufacturing Thereof and GaN-based Semiconductor Device and Method of Manufacturing Thereof App 20140061668 - FUJIWARA; Shinsuke ; et al.	2014-03-06
Method of manufacturing composite substrate Grant 8,664,085 - Maeda , et al. March 4, 2	2014-03-04
Method for Producing Group III Nitride Crystal App 20130337632 - Uematsu; Koji ; et al.	2013-12-19
GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof Grant 8,598,685 - Fujiwara , et al. December 3, 2	2013-12-03
Nitride Crystal, Nitride Crystal Substrate, Epilayer-containing Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same App 20130292802 - ISHIBASHI; Keiji ; et al.	2013-11-07
Prepared and Stored GaN Substrate App 20130256696 - Ijiri; Hideyuki ; et al.	2013-10-03
Fabrication Method And Fabrication Apparatus Of Group Iii Nitride Crystal Substance App 20130244406 - KASAI; Hitoshi ; et al.	2013-09-19
Group III nitride crystal and method for producing the same Grant 8,524,575 - Uematsu , et al. September 3, 2	2013-09-03
Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate Grant 8,501,592 - Fujiwara , et al. August 6, 2	2013-08-06
Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture Grant 8,476,158 - Ijiri , et al. July 2, 2	2013-07-02
Method of Manufacturing III-Nitride Crystal App 20130160699 - Mizuhara; Naho ; et al.	2013-06-27
Group III nitride semiconductor substrate and manufacturing method thereof Grant 8,421,190 - Okahisa , et al. April 16, 2	2013-04-16
Group-III nitride crystal composite Grant 8,404,042 - Mizuhara , et al. March 26, 2	2013-03-26
Fabrication method and fabrication apparatus of group III nitride crystal substance Grant 8,404,569 - Kasai , et al. March 26, 2	2013-03-26
Group III nitride single crystal and method of its growth Grant 8,377,204 - Miyanaga , et al. February 19, 2	2013-02-19
Method of Manufacturing Composite Substrate App 20130040437 - Maeda; Yoko ; et al.	2013-02-14
III nitride semiconductor crystal, III nitride semiconductor device, and light emitting device Grant 8,362,521 - Nakahata , et al. January 29, 2	2013-01-29
Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device Grant 8,349,078 - Shiomi , et al. January 8, 2	2013-01-08
Group III Nitride Crystal and Method for Producing the Same App 20120329245 - Uematsu; Koji ; et al.	2012-12-27
Group-III Nitride Crystal Composite App 20120315445 - Mizuhara; Naho ; et al.	2012-12-13
Group Iii Nitride Semiconductor Light-emitting Device App 20120305933 - NAKAHATA; Seiji ; et al.	2012-12-06
III-V compound crystal and semiconductor electronic circuit element Grant 8,304,334 - Nakahata , et al. November 6, 2	2012-11-06
GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture Grant 8,294,245 - Nakahata , et al. October 23, 2	2012-10-23
GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device Grant 8,283,694 - Ishibashi , et al. October 9, 2	2012-10-09
Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal Grant 8,258,051 - Mizuhara , et al. September 4, 2	2012-09-04
GaN substrate and light-emitting device Grant 8,253,162 - Fujiwara , et al. August 28, 2	2012-08-28
Method of storing GaN substrate, stored substrate, and semiconductor device and method of its manufacture Grant 8,227,826 - Ijiri , et al. July 24, 2	2012-07-24
Al.sub.xIn.sub.yGa.sub.l-x-yN mixture crystal substrate, method of growing same and method of producing same Grant 8,198,177 - Nakahata , et al. June 12, 2	2012-06-12
III-V Compound Crystal and Semiconductor Electronic Circuit Element App 20120142168 - Nakahata; Seiji ; et al.	2012-06-07
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same Grant 8,192,543 - Ishibashi , et al. June 5, 2	2012-06-05
Conductive Nitride Semiconductor Substrate And Method For Producing The Same App 20120126371 - Sato; Fumitaka ; et al.	2012-05-24
Method of Synthesizing Nitride Semiconductor Single-Crystal Substrate App 20120118226 - FUJIWARA; Shinsuke ; et al.	2012-05-17
Group Iii Nitride Substrate, Epitaxial Layer-provided Substrate, Methods Of Manufacturing The Same, And Method Of Manufacturing Semiconductor Device App 20120094473 - ISHIBASHI; Keiji ; et al.	2012-04-19
Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate App 20120070962 - Fujiwara; Shinsuke ; et al.	2012-03-22
III-V compound crystal and semiconductor electronic circuit element Grant 8,134,223 - Nakahata , et al. March 13, 2	2012-03-13
AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AND METHOD OF PRODUCING SAME App 20120040511 - NAKAHATA; Seiji ; et al.	2012-02-16
Method of Manufacturing Nitride Semiconductor Substrate App 20120034763 - Osada; Hideki ; et al.	2012-02-09
Conductive nitride semiconductor substrate and method for producing the same Grant 8,110,484 - Sato , et al. February 7, 2	2012-02-07
Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device Grant 8,101,968 - Ishibashi , et al. January 24, 2	2012-01-24
Al.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate, method of growing same and method of producing same Grant 8,067,300 - Nakahata , et al. November 29, 2	2011-11-29
Method of Preparing and Storing GaN Substrate, Prepared and Stored GaN Substrate, and Semiconductor Device and Method of Its Manufacture App 20110278588 - Ijiri; Hideyuki ; et al.	2011-11-17
Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device Grant 8,038,794 - Sasaki , et al. October 18, 2	2011-10-18
Method Of Forming Nitride Semiconductor Epitaxial Layer And Method Of Manufacturing Nitride Semiconductor Device App 20110223749 - SHIOMI; Hiromu ; et al.	2011-09-15
III nitride single crystal and method of manufacturing semiconductor device incorporating the III nitride single crystal Grant 8,008,173 - Nakahata August 30, 2	2011-08-30
Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device Grant 8,002,892 - Hirota , et al. August 23, 2	2011-08-23
Group Iii Nitride Substrate, Epitaxial Layer-provided Substrate, Methods Of Manufacturing The Same, And Method Of Manufacturing Semiconductor Device App 20110133207 - Ishibashi; Keiji ; et al.	2011-06-09
GaN SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE App 20110133209 - ISHIBASHI; Keiji ; et al.	2011-06-09
Method For Manufacturing Semiconductor Substrate, Method For Manufacturing Semiconductor Device, Semiconductor Substrate, And Semiconductor Device App 20110121311 - SATO; Fumitaka ; et al.	2011-05-26
GaN SUBSTRATE AND LIGHT-EMITTING DEVICE App 20110108852 - FUJIWARA; Shinsuke ; et al.	2011-05-12
Gallium nitride substrate and gallium nitride layer formation method Grant 7,915,149 - Nakahata , et al. March 29, 2	2011-03-29
Fabrication Method And Fabrication Apparatus Of Group Iii Nitride Crystal Substance App 20110065265 - KASAI; Hitoshi ; et al.	2011-03-17
Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device Grant 7,905,958 - Sasaki , et al. March 15, 2	2011-03-15
GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THEREOF AND GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF App 20110057197 - FUJIWARA; Shinsuke ; et al.	2011-03-10
Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device Grant 7,901,960 - Ishibashi , et al. March 8, 2	2011-03-08
Group Iii Nitride Semiconductor Substrate And Manufacturing Method Thereof App 20110018003 - OKAHISA; Takuji ; et al.	2011-01-27
Method of manufacturing group III nitride crystal Grant 7,863,167 - Sato , et al. January 4, 2	2011-01-04
Method of Storing GaN Substrate, Stored Substrate, and Semiconductor Device and Method of Its Manufacture App 20100326876 - Ijiri; Hideyuki ; et al.	2010-12-30
Fabrication method and fabrication apparatus of group III nitride crystal substance Grant 7,858,502 - Kasai , et al. December 28, 2	2010-12-28
III-Nitride Single-Crystal Ingot, III-Nitride Single-Crystal Substrate, Method of Manufacturing III-Nitride Single-Crystal Ingot, and Method of Manufacturing III-Nitride Single-Crystal Substrate App 20100322841 - Okahisa; Takuji ; et al.	2010-12-23
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same Grant 7,854,804 - Ishibashi , et al. December 21, 2	2010-12-21
GaN Single-Crystal Mass and Method of Its Manufacture, and Semiconductor Device and Method of Its Manufacture App 20100314625 - NAKAHATA; Hideaki ; et al.	2010-12-16
Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device Grant 7,851,381 - Ishibashi , et al. December 14, 2	2010-12-14
Method For Producing Semiconductor Devices App 20100297790 - Nakahata; Seiji ; et al.	2010-11-25
Method of producing a nitride semiconductor device and nitride semiconductor device Grant 7,834,423 - Nakahata , et al. November 16, 2	2010-11-16
Method For Growing Group Iii Nitride Crystal App 20100275836 - Sato; Fumitaka ; et al.	2010-11-04
GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate Grant 7,816,238 - Osada , et al. October 19, 2	2010-10-19
Method of storing GaN substrate, stored substrate, and semiconductor device and method of its manufacture Grant 7,811,908 - Ijiri , et al. October 12, 2	2010-10-12
Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate Grant 7,794,543 - Motoki , et al. September 14, 2	2010-09-14
III Nitride Semiconductor Crystal, III Nitride Semiconductor Device, and Light Emitting Device App 20100207138 - Nakahata; Seiji ; et al.	2010-08-19
Nitride semiconductor substrate and method of producing same Grant 7,771,532 - Uematsu , et al. August 10, 2	2010-08-10
Nitride semiconductor substrate and method of producing same Grant 7,772,585 - Uematsu , et al. August 10, 2	2010-08-10
Group Iii Nitride Substrate, Epitaxial Layer-provided Substrate, Methods Of Manufacturing The Same, And Method Of Manufacturing Semiconductor Device App 20100187540 - Ishibashi; Keiji ; et al.	2010-07-29
Method Of Recovering And Reproducing Substrates And Method Of Producing Semiconductor Wafers App 20100190318 - NAKAHATA; Seiji	2010-07-29
GaN Epitaxial Wafer and Semiconductor Devices, and Method of Manufacturing GaN Epitaxial Wafer and Semiconductor Devices App 20100148174 - Nakahata; Seiji ; et al.	2010-06-17
III nitride semiconductor crystal and manufacturing method thereof, III nitride semiconductor device manufacturing method thereof, and light emitting device Grant 7,732,236 - Nakahata , et al. June 8, 2	2010-06-08
Growth method of GaN crystal, and GaN crystal substrate Grant 7,723,142 - Matsumoto , et al. May 25, 2	2010-05-25
Nitride Crystal, Nitride Crystal Substrate, Epilayer-containing Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same App 20100123168 - ISHIBASHI; Keiji ; et al.	2010-05-20
Method of recovering and reproducing substrates and method of producing semiconductor wafers Grant 7,713,878 - Nakahata May 11, 2	2010-05-11
III-V Compound Crystal and Semiconductor Electronic Circuit Element App 20100090313 - Nakahata; Seiji ; et al.	2010-04-15
Method of producing group 3 nitride substrate wafers and group 3 nitride substrate wafers Grant 7,662,239 - Ishibashi , et al. February 16, 2	2010-02-16
A1.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate, method of growing same and method of producing same Grant 7,655,960 - Nakahata , et al. February 2, 2	2010-02-02
Fabrication Method And Fabrication Apparatus Of Group Iii Nitride Crystal Substance App 20100009526 - KASAI; Hitoshi ; et al.	2010-01-14
Gallium Nitride Crystal Substrate And Method Of Producing Same App 20090289261 - SATO; Fumitaka ; et al.	2009-11-26
Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate App 20090267190 - Fujiwara; Shinsuke ; et al.	2009-10-29
Method of Manufacturing III-Nitride Crystal, and Semiconductor Device Utilizing the Crystal App 20090236694 - Mizuhara; Naho ; et al.	2009-09-24
Fabrication method and fabrication apparatus of group III nitride crystal substance Grant 7,589,000 - Kasai , et al. September 15, 2	2009-09-15
AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AND METHOD OF PRODUCING SAME App 20090215248 - NAKAHATA; Seiji ; et al.	2009-08-27
Group III Nitride Single Crystal and Method of Its Growth App 20090208749 - Miyanaga; Michimasa ; et al.	2009-08-20
Method of Manufacturing Group III Nitride Crystal App 20090209091 - Sato; Fumitaka ; et al.	2009-08-20
III Nitride Single Crystal and Method of Manufacturing Semiconductor Device Incorporating the III Nitride Single Crystal App 20090197398 - Nakahata; Seiji	2009-08-06
Method Of Producing A Nitride Semiconductor Device And Nitride Semiconductor Device App 20090189253 - NAKAHATA; Seiji ; et al.	2009-07-30
Gallium nitride crystal substrate and method of producing same Grant 7,556,687 - Sato , et al. July 7, 2	2009-07-07
Nitride Semiconductor Substrate And Method Of Producing Same App 20090155989 - UEMATSU; Koji ; et al.	2009-06-18
GaN Substrate Manufacturing Method, GaN Substrate, and Semiconductor Device App 20090127564 - Irikura; Masato ; et al.	2009-05-21
III nitride single crystal manufacturing method Grant 7,534,295 - Nakahata May 19, 2	2009-05-19
Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate Grant 7,534,310 - Motoki , et al. May 19, 2	2009-05-19
Method of producing a nitride semiconductor device and nitride semiconductor device Grant 7,528,055 - Nakahata , et al. May 5, 2	2009-05-05
Semi-insulating Nitride Semiconductor Substrate And Method Of Manufacturing The Same, Nitride Semiconductor Epitaxial Substrate, And Field-effect Transistor App 20090108297 - SATO; Fumitaka ; et al.	2009-04-30
AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE App 20090071394 - NAKAHATA; Seiji ; et al.	2009-03-19
Group III-V crystal Grant 7,485,484 - Nakahata , et al. February 3, 2	2009-02-03
Al.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate, method of growing Al.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate and method of producing Al.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate Grant 7,473,315 - Nakahata , et al. January 6, 2	2009-01-06
GaN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING GaN SUBSTRATE App 20080308906 - OSADA; Hideki ; et al.	2008-12-18
Gallium Nitride Substrate And Gallium Nitride Layer Formation Method App 20080308814 - NAKAHATA; Seiji ; et al.	2008-12-18
GaN Substrate, Substrate with an Epitaxial Layer, Semiconductor Device, and GaN Substrate Manufacturing Method App 20080308815 - Kasai; Hitoshi ; et al.	2008-12-18
GROWTH METHOD OF GaN CRYSTAL, AND GaN CRYSTAL SUBSTRATE App 20080296585 - MATSUMOTO; Naoki ; et al.	2008-12-04
Group III-V Crystal App 20080299748 - Nakahata; Seiji ; et al.	2008-12-04
Group III-Nitride Semiconductor Crystal and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device App 20080283968 - Sasaki; Takatomo ; et al.	2008-11-20
Gallium Nitride Substrate and Gallium Nitride Film Deposition Method App 20080272377 - Nakahata; Seiji	2008-11-06
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same App 20080272392 - Ishibashi; Keiji ; et al.	2008-11-06
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same App 20080271667 - Ishibashi; Keiji ; et al.	2008-11-06
Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate App 20080202409 - Motoki; Kensaku ; et al.	2008-08-28
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same Grant 7,416,604 - Ishibashi , et al. August 26, 2	2008-08-26
III Nitride Single Crystal, and Manufacturing Method Therefor and Semiconductor Device Therewith App 20080169532 - Nakahata; Seiji	2008-07-17
Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate Grant 7,354,477 - Motoki , et al. April 8, 2	2008-04-08
Manufacturing method of group III nitride substrate, group III nitride substrate, group III nitride substrate with epitaxial layer, manufacturing method of group III nitride substrate with epitaxial layer, and manufacturing method of group III nitride device App 20080057608 - Ishibashi; Keiji ; et al.	2008-03-06
Group III-V Crystal App 20080038580 - Nakahata; Seiji ; et al.	2008-02-14
Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device App 20080022921 - Sasaki; Takatomo ; et al.	2008-01-31
Method of producing group 3 nitride substrate wafers and group 3 nitride substrate wafers App 20080014756 - Ishibashi; Keiji ; et al.	2008-01-17
Method of growing gallium nitride crystal App 20080006201 - Hirota; Ryu ; et al.	2008-01-10
Method of Storing GaN Substrate, Stored Substrate, and Semiconductor Device and Method of Its Manufacture App 20080003440 - Ijiri; Hideyuki ; et al.	2008-01-03
Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device App 20070296061 - Sasaki; Takatomo ; et al.	2007-12-27
Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device App 20070281484 - Ishibashi; Keiji ; et al.	2007-12-06
Method of growing gallium nitride crystal and gallium nitride substrate App 20070280872 - Okahisa; Takuji ; et al.	2007-12-06
Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate Grant 7,303,630 - Motoki , et al. December 4, 2	2007-12-04
Group III-V crystal and manufacturing method thereof Grant 7,297,625 - Nakahata , et al. November 20, 2	2007-11-20
Nitride single crystal and producing method thereof Grant 7,294,199 - Uematsu , et al. November 13, 2	2007-11-13
Group III nitride semiconductor crystal and method of its manufacture, group III nitride semiconductor device and method of its manufacture, and light-emitting appliance App 20070164306 - Nakahata; Seiji ; et al.	2007-07-19
Fabrication method and fabrication apparatus of group III nitride crystal substance App 20070148920 - Kasai; Hitoshi ; et al.	2007-06-28
Gallium Nitride Crystal Substrate, Semiconductor Device, Method of Manufacturing Semiconductor Device, and Method of Identifying Gallium Nitride Crystal Substrate App 20070145376 - Okui; Manabu ; et al.	2007-06-28
Gallium nitride crystal substrate and method of producing same App 20070062440 - Sato; Fumitaka ; et al.	2007-03-22
Method of producing a nitride semiconductor device and nitride semiconductor device App 20070054476 - Nakahata; Seiji ; et al.	2007-03-08
Group III nitride semiconductor substrate and manufacturing method thereof App 20070012943 - Okahisa; Takuji ; et al.	2007-01-18
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same App 20060292728 - Ishibashi; Keiji ; et al.	2006-12-28
A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same App 20060273343 - Nakahata; Seiji ; et al.	2006-12-07
Nitride semiconductor substrate and method of producing same App 20060272572 - Uematsu; Koji ; et al.	2006-12-07
Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate App 20060213429 - Motoki; Kensaku ; et al.	2006-09-28
Single crystal GaN substrate semiconductor device Grant 7,112,826 - Motoki , et al. September 26, 2	2006-09-26
Al.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate Grant 7,105,865 - Nakahata , et al. September 12, 2	2006-09-12
Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate Grant 7,087,114 - Motoki , et al. August 8, 2	2006-08-08
Light emitting device App 20060054942 - Nakahata; Seiji	2006-03-16
Nitride Semiconductor Single-Crystal Substrate and Method of Its Synthesis App 20060027896 - Fujiwara; Shinsuke ; et al.	2006-02-09
Mehtod for processing nitride semiconductor crystal surface and nitride semiconductor crystal obtained by such method App 20060012011 - Nakahata; Seiji ; et al.	2006-01-19
Nitride single crystal and producing method thereof App 20050277214 - Uematsu, Koji ; et al.	2005-12-15
III nitride crystal and method for producing same App 20050257733 - Nakahata, Seiji	2005-11-24
Group III-V Crystal and Manufacturing method thereof App 20050227472 - Nakahata, Seiji ; et al.	2005-10-13
AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate App 20050183658 - Nakahata, Seiji ; et al.	2005-08-25
AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same App 20050161697 - Nakahata, Seiji ; et al.	2005-07-28
Group III Nitride Crystal Substrate, Method of Its Manufacture, and Group-III Nitride Semiconductor Device App 20050164419 - Hirota, Ryu ; et al.	2005-07-28
Group III Nitride Crystal, Method of Its Manufacture, and Equipment for Manufacturing Group III Nitride Crystal App 20050098090 - Hirota, Ryu ; et al.	2005-05-12
Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate App 20050092234 - Motoki, Kensaku ; et al.	2005-05-05
Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate App 20050076830 - Motoki, Kensaku ; et al.	2005-04-14
Method of recovering and reproducing substrates and method of producing semiconductor wafers App 20050037595 - Nakahata, Seiji	2005-02-17
Single crystal GaN substrate, method of growing same and method of producing same App 20040089919 - Motoki, Kensaku ; et al.	2004-05-13
Single crystal GaN substrate, method of growing same and method of producing same Grant 6,667,184 - Motoki , et al. December 23, 2	2003-12-23
Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate App 20030145783 - Motoki, Kensaku ; et al.	2003-08-07
Single crystal GaN substrate, method of growing same and method of producing same App 20030080345 - Motoki, Kensaku ; et al.	2003-05-01
Si3N4 ceramic, Si-base composition for production thereof and processes for producing these App 20020002107 - Nakahata, Seiji ; et al.	2002-01-03
Si3N4 ceramic, Si-base composition for production thereof and processes for producing these Grant 6,284,690 - Nakahata , et al. September 4, 2	2001-09-04
Method of preparing a ceramic porous body Grant 5,695,700 - Takeuchi , et al. December 9, 1	1997-12-09