Nagumo; Toshiharu

Patent Applications and Registrations

Patent applications and USPTO patent grants for Nagumo; Toshiharu.The latest application filed is for "semiconductor memory device and manufacturing method thereof".

Company Profile

0.13.21

Nagumo; Toshiharu - Kuwana JP
NAGUMO; Toshiharu - Tokyo JP
Nagumo; Toshiharu - Kanagawa JP
Nagumo; Toshiharu - Yokkaichi JP
Nagumo; Toshiharu - Sagamihara JP
NAGUMO; Toshiharu - Kawasaki-shi JP
Nagumo; Toshiharu - Kawasaki JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor memory device including memory pillars and transistor and manufacturing method thereof Grant 10,896,913 - Fukushima , et al. January 19, 2	2021-01-19
Semiconductor Memory Device And Manufacturing Method Thereof App 20200083243 - FUKUSHIMA; Takashi ; et al.	2020-03-12
Semiconductor Device Having Compressively Strained Channel Region And Method Of Making Same App 20180301552 - NAGUMO; Toshiharu	2018-10-18
Semiconductor device having compressively strained channel region and method of making same Grant 10,069,010 - Nagumo September 4, 2	2018-09-04
Semiconductor memory device and method for manufacturing same Grant 9,929,177 - Nagumo March 27, 2	2018-03-27
Semiconductor Memory Device And Method For Manufacturing Same App 20170309638 - NAGUMO; Toshiharu	2017-10-26
High-electron-mobility transistor with protective diode Grant 9,589,951 - Nagumo , et al. March 7, 2	2017-03-07
Self-aligned dual-height isolation for bulk FinFET Grant 9,564,486 - Akarvardar , et al. February 7, 2	2017-02-07
Semiconductor device and forming method Grant 9,553,131 - Nagumo , et al. January 24, 2	2017-01-24
Semiconductor device having finFET structures and method of making same Grant 9,362,308 - Nagumo June 7, 2	2016-06-07
Self-aligned dual-height isolation for bulk FinFET Grant 9,324,790 - Akarvardar , et al. April 26, 2	2016-04-26
Device isolation in FinFET CMOS Grant 9,305,846 - Jacob , et al. April 5, 2	2016-04-05
Semiconductor Device App 20160079426 - KUME; Ippei ; et al.	2016-03-17
Semiconductor Device App 20160056145 - Nagumo; Toshiharu ; et al.	2016-02-25
Semiconductor Device And Forming Method App 20160056207 - NAGUMO; Toshiharu ; et al.	2016-02-25
Retrograde Doped Layer For Device Isolation App 20160035728 - Jacob; Ajey Poovannummoottil ; et al.	2016-02-04
Field Effect Transistor With Channel Core Modified For A Backgate Bias And Method Of Fabrication App 20160027872 - HIRAI; Tomohiro ; et al.	2016-01-28
Field Effect Transistor With Channel Core Modified To Reduce Leakage Current And Method Of Fabrication App 20160020312 - HIRAI; Tomohiro ; et al.	2016-01-21
Semiconductor device with group-III nitride compound semiconductor layer on substrate for transistor Grant 9,231,105 - Kume , et al. January 5, 2	2016-01-05
Self-aligned Dual-height Isolation For Bulk Finfet App 20150372080 - Akarvardar; Murat Kerem ; et al.	2015-12-24
Field effect transistor with channel core modified to reduce leakage current and method of fabrication Grant 9,196,715 - Hirai , et al. November 24, 2	2015-11-24
Field effect transistor with channel core modified for a backgate bias and method of fabrication Grant 9,190,505 - Hirai , et al. November 17, 2	2015-11-17
Self-aligned Dual-height Isolation For Bulk Finfet App 20150137308 - Akarvardar; Murat Kerem ; et al.	2015-05-21
Device Isolation In Finfet Cmos App 20150140761 - Jacob; Ajey Poovannummoottil ; et al.	2015-05-21
Semiconductor Device App 20150060875 - Kume; Ippei ; et al.	2015-03-05
Device isolation in finFET CMOS Grant 8,963,259 - Jacob , et al. February 24, 2	2015-02-24
Retrograde Doped Layer For Device Isolation App 20140361377 - Jacob; Ajey Poovannummoottil ; et al.	2014-12-11
Device Isolation In Finfet Cmos App 20140353801 - Jacob; Ajey P. ; et al.	2014-12-04
Semiconductor Device Having Finfet Structures And Method Of Making Same App 20140252483 - NAGUMO; Toshiharu	2014-09-11
Semiconductor Device Having Compressively Strained Channel Region And Method Of Making Same App 20140239399 - NAGUMO; Toshiharu	2014-08-28
Field Effect Transistor With Channel Core Modified To Reduce Leakage Current And Method Of Fabrication App 20140183451 - HIRAI; Tomohiro ; et al.	2014-07-03
Field Effect Transistor With Channel Core Modified For A Backgate Bias And Method Of Fabrication App 20140183452 - HIRAI; Tomohiro ; et al.	2014-07-03
Semiconductor Device, Semiconductor Wafer, And Methods Of Manufacturing The Same App 20120313172 - MATSUDAIRA; Masaharu ; et al.	2012-12-13
Evaluation Method, Evaluation Apparatus, And Simulation Method Of Semiconductor Device App 20120065920 - NAGUMO; Toshiharu ; et al.	2012-03-15

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