| Patent | Date |
|---|
Multi-height finfet device by selective oxidation
Grant 11,456,372 - Kim , et al. September 27, 2 | 2022-09-27 |
Source/drain regions in integrated circuit structures
Grant 11,450,738 - Ma , et al. September 20, 2 | 2022-09-20 |
Backside source/drain replacement for semiconductor devices with metallization on both sides
Grant 11,444,166 - Glass , et al. September 13, 2 | 2022-09-13 |
Field effect transistors with wide bandgap materials
Grant 11,444,159 - Ma , et al. September 13, 2 | 2022-09-13 |
Buried etch-stop layer to help control transistor source/drain depth
Grant 11,430,868 - Mehandru , et al. August 30, 2 | 2022-08-30 |
Forming crystalline source/drain contacts on semiconductor devices
Grant 11,430,787 - Jambunathan , et al. August 30, 2 | 2022-08-30 |
Transistor Devices Having Source/drain Structure Configured With High Germanium Content Portion
App 20220271125 - Glass; Glenn A. ; et al. | 2022-08-25 |
Integration Methods To Fabricate Internal Spacers For Nanowire Devices
App 20220262901 - KIM; Seiyon ; et al. | 2022-08-18 |
High-mobility semiconductor source/drain spacer
Grant 11,417,655 - Dewey , et al. August 16, 2 | 2022-08-16 |
Source electrode and drain electrode protection for nanowire transistors
Grant 11,411,096 - Jambunathan , et al. August 9, 2 | 2022-08-09 |
Diverse transistor channel materials enabled by thin, inverse-graded, germanium-based layer
Grant 11,404,575 - Jambunathan , et al. August 2, 2 | 2022-08-02 |
Transistors with high concentration of germanium
Grant 11,387,320 - Murthy , et al. July 12, 2 | 2022-07-12 |
Field Effect Transistors With Gate Electrode Self-aligned To Semiconductor Fin
App 20220181442 - Ma; Sean T. ; et al. | 2022-06-09 |
Non-planar semiconductor device including a replacement channel structure
Grant 11,355,621 - Dewey , et al. June 7, 2 | 2022-06-07 |
Integration method for finfet with tightly controlled multiple fin heights
Grant 11,335,600 - Kim , et al. May 17, 2 | 2022-05-17 |
Use Of A Placeholder For Backside Contact Formation For Transistor Arrangements
App 20220139911 - Wei; Andy Chih-Hung ; et al. | 2022-05-05 |
Epitaxial Oxide Plug For Strained Transistors
App 20220131007 - JAMBUNATHAN; Karthik ; et al. | 2022-04-28 |
Integration methods to fabricate internal spacers for nanowire devices
Grant 11,302,777 - Kim , et al. April 12, 2 | 2022-04-12 |
Reducing Band-to-band Tunneling In Semiconductor Devices
App 20220109072 - CHU-KUNG; Benjamin ; et al. | 2022-04-07 |
PMOS and NMOS contacts in common trench
Grant 11,296,079 - Glass , et al. April 5, 2 | 2022-04-05 |
Dual Contact Process With Selective Deposition
App 20220102506 - COOK; Kevin ; et al. | 2022-03-31 |
Low Resistance Approaches For Fabricating Contacts And The Resulting Structures
App 20220102521 - DEWEY; Gilbert ; et al. | 2022-03-31 |
Dual Contact Process With Stacked Metal Layers
App 20220102510 - COOK; Kevin ; et al. | 2022-03-31 |
Low Resistance And Reduced Reactivity Approaches For Fabricating Contacts And The Resulting Structures
App 20220102522 - DEWEY; Gilbert ; et al. | 2022-03-31 |
Contact Resistance Reduction Employing Germanium Overlayer Pre-contact Metalization
App 20220102523 - Glass; Glenn A. ; et al. | 2022-03-31 |
Source/drain Diffusion Barrier For Germanium Nmos Transistors
App 20220093797 - GLASS; Glenn A. ; et al. | 2022-03-24 |
Co-integrated Gallium Nitride (gan) And Complementary Metal Oxide Semiconductor (cmos) Integrated Circuit Technology
App 20220093790 - GLASS; Glenn A. ; et al. | 2022-03-24 |
Field effect transistors with gate electrode self-aligned to semiconductor fin
Grant 11,276,755 - Ma , et al. March 15, 2 | 2022-03-15 |
Cmos Finfet Device Having Strained Sige Fins And A Strained Si Cladding Layer On The Nmos Channel
App 20220059656 - Cea; Stephen M. ; et al. | 2022-02-24 |
Epitaxial oxide plug for strained transistors
Grant 11,251,302 - Jambunathan , et al. February 15, 2 | 2022-02-15 |
Contact resistance reduction employing germanium overlayer pre-contact metalization
Grant 11,251,281 - Glass , et al. February 15, 2 | 2022-02-15 |
Non-selective Epitaxial Source/drain Deposition To Reduce Dopant Diffusion For Germanium Nmos Transistors
App 20220037530 - GLASS; Glenn A. ; et al. | 2022-02-03 |
Transistor With Isolation Below Source And Drain
App 20220028972 - RACHMADY; Willy ; et al. | 2022-01-27 |
Self-aligned 3-d Epitaxial Structures For Mos Device Fabrication
App 20220028747 - GLASS; Glenn A. ; et al. | 2022-01-27 |
Reducing band-to-band tunneling in semiconductor devices
Grant 11,233,148 - Chu-Kung , et al. January 25, 2 | 2022-01-25 |
Layered substrate for microelectronic devices
Grant 11,232,948 - Glass , et al. January 25, 2 | 2022-01-25 |
Source/drain diffusion barrier for germanium NMOS transistors
Grant 11,222,977 - Glass , et al. January 11, 2 | 2022-01-11 |
Source Or Drain Structures With High Surface Germanium Concentration
App 20210408275 - BOMBERGER; Cory ; et al. | 2021-12-30 |
Gate-all-around Integrated Circuit Structures Having Strained Source Or Drain Structures On Gate Dielectric Layer
App 20210408284 - AGRAWAL; Ashish ; et al. | 2021-12-30 |
Gate-all-around Integrated Circuit Structures Having Germanium-doped Nanoribbon Channel Structures
App 20210408285 - HICKEY; Ryan ; et al. | 2021-12-30 |
Gate-all-around Integrated Circuit Structures Having Strained Source Or Drain Structures On Insulator
App 20210408283 - AGRAWAL; Ashish ; et al. | 2021-12-30 |
Source Or Drain Structures With High Germanium Concentration Capping Layer
App 20210407851 - BOMBERGER; Cory ; et al. | 2021-12-30 |
Gate-all-around Integrated Circuit Structures Having Strained Dual Nanoribbon Channel Structures
App 20210407996 - AGRAWAL; Ashish ; et al. | 2021-12-30 |
Contact Resistance Reduction In Transistor Devices With Metallization On Both Sides
App 20210408246 - GANGULY; Koustav ; et al. | 2021-12-30 |
Integrated Circuit Structures Including A Titanium Silicide Material
App 20210408258 - LAVRIC; Dan S. ; et al. | 2021-12-30 |
Transition Metal-iii-nitride Alloys For Robust High Performance Hemts
App 20210399119 - VISHWANATH; Suresh ; et al. | 2021-12-23 |
Techniques For Achieving Multiple Transistor Fin Dimensions On A Single Die
App 20210398979 - GLASS; Glenn A. ; et al. | 2021-12-23 |
Optimizing gate profile for performance and gate fill
Grant 11,205,707 - Rahhal-Orabi , et al. December 21, 2 | 2021-12-21 |
Method of fabricating a semiconductor device with strained SiGe fins and a Si cladding layer
Grant 11,195,919 - Cea , et al. December 7, 2 | 2021-12-07 |
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors
Grant 11,189,730 - Glass , et al. November 30, 2 | 2021-11-30 |
Transistor structures having multiple threshold voltage channel materials
Grant 11,177,255 - Ma , et al. November 16, 2 | 2021-11-16 |
Semiconductor fin design to mitigate fin collapse
Grant 11,171,057 - Glass , et al. November 9, 2 | 2021-11-09 |
Self-aligned 3-D epitaxial structures for MOS device fabrication
Grant 11,171,058 - Glass , et al. November 9, 2 | 2021-11-09 |
Transistor with isolation below source and drain
Grant 11,171,207 - Rachmady , et al. November 9, 2 | 2021-11-09 |
Group III-V semiconductor devices having asymmetric source and drain structures
Grant 11,164,747 - Ma , et al. November 2, 2 | 2021-11-02 |
Techniques for achieving multiple transistor fin dimensions on a single die
Grant 11,152,361 - Glass , et al. October 19, 2 | 2021-10-19 |
Source/drain Regions In Integrated Circuit Structures
App 20210305367 - Ma; Sean T. ; et al. | 2021-09-30 |
Finfet Transistor Having A Doped Subfin Structure To Reduce Channel To Substrate Leakage
App 20210296180 - DEWEY; Gilbert ; et al. | 2021-09-23 |
Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch
Grant 11,121,030 - Glass , et al. September 14, 2 | 2021-09-14 |
FINFET transistor having a doped subfin structure to reduce channel to substrate leakage
Grant 11,107,890 - Dewey , et al. August 31, 2 | 2021-08-31 |
Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements
Grant 11,101,350 - Glass , et al. August 24, 2 | 2021-08-24 |
Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors
Grant 11,101,356 - Glass , et al. August 24, 2 | 2021-08-24 |
Transistors employing non-selective deposition of source/drain material
Grant 11,101,268 - Jambunathan , et al. August 24, 2 | 2021-08-24 |
Deuterium-based passivation of non-planar transistor interfaces
Grant 11,094,785 - Majhi , et al. August 17, 2 | 2021-08-17 |
Transistors with lattice matched gate structure
Grant 11,081,570 - Jambunathan , et al. August 3, 2 | 2021-08-03 |
Transistors with channel and sub-channel regions with distinct compositions and dimensions
Grant 11,069,795 - Jambunathan , et al. July 20, 2 | 2021-07-20 |
Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer
Grant 11,056,592 - Jambunathan , et al. July 6, 2 | 2021-07-06 |
Art trench spacers to enable fin release for non-lattice matched channels
Grant 11,049,773 - Dewey , et al. June 29, 2 | 2021-06-29 |
Fin Smoothing And Integrated Circuit Structures Resulting Therefrom
App 20210167210 - BOMBERGER; Cory ; et al. | 2021-06-03 |
Etching fin core to provide fin doubling
Grant 11,024,737 - Mohapatra , et al. June 1, 2 | 2021-06-01 |
Gradient doping to lower leakage in low band gap material devices
Grant 11,024,713 - Sung , et al. June 1, 2 | 2021-06-01 |
Semiconductor Device Having Doped Epitaxial Region And Its Methods Of Fabrication
App 20210159339 - MURTHY; Anand S. ; et al. | 2021-05-27 |
Techniques for increasing channel region tensile strain in n-MOS devices
Grant 11,011,620 - Mehandru , et al. May 18, 2 | 2021-05-18 |
Epitaxial buffer to reduce sub-channel leakage in MOS transistors
Grant 11,004,954 - Jambunathan , et al. May 11, 2 | 2021-05-11 |
Local interconnect for group IV source/drain regions
Grant 10,998,270 - Sung , et al. May 4, 2 | 2021-05-04 |
Thin film cap to lower leakage in low band gap material devices
Grant 10,985,263 - Sung , et al. April 20, 2 | 2021-04-20 |
Passivation of transistor channel region interfaces
Grant 10,978,568 - Glass , et al. April 13, 2 | 2021-04-13 |
High Aspect Ration Source Or Drain Structures With Abrupt Dopant Profile
App 20210091181 - KEECH; Ryan ; et al. | 2021-03-25 |
Semiconductor device having doped epitaxial region and its methods of fabrication
Grant 10,957,796 - Murthy , et al. March 23, 2 | 2021-03-23 |
High-mobility field effect transistors with wide bandgap fin cladding
Grant 10,957,769 - Ma , et al. March 23, 2 | 2021-03-23 |
Device, Method And System To Provide A Stressed Channel Of A Transistor
App 20210083117 - Mehandru; Rishabh ; et al. | 2021-03-18 |
Silicon Substrate Modification To Enable Formation Of Thin, Relaxed, Germanium-based Layer
App 20210083116 - JAMBUNATHAN; KARTHIK ; et al. | 2021-03-18 |
Backside Source/drain Replacement For Semiconductor Devices With Metallization On Both Sides
App 20210074823 - Glass; Glenn A. ; et al. | 2021-03-11 |
Geometry tuning of fin based transistor
Grant 10,944,006 - Glass , et al. March 9, 2 | 2021-03-09 |
Integration Methods To Fabricate Internal Spacers For Nanowire Devices
App 20210050418 - KIM; Seiyon ; et al. | 2021-02-18 |
Semiconductor device with released source and drain
Grant 10,903,364 - Rachmady , et al. January 26, 2 | 2021-01-26 |
Device isolation by fixed charge
Grant 10,892,335 - Ma , et al. January 12, 2 | 2021-01-12 |
Backside source/drain replacement for semiconductor devices with metallization on both sides
Grant 10,892,337 - Glass , et al. January 12, 2 | 2021-01-12 |
Doped Insulator Cap To Reduce Source/drain Diffusion For Germanium Nmos Transistors
App 20210005722 - Glass; Glenn A. ; et al. | 2021-01-07 |
Source/drain Diffusion Barrier For Germanium Nmos Transistors
App 20210005748 - Glass; Glenn A. ; et al. | 2021-01-07 |
Transistor devices having source/drain structure configured with high germanium content portion
App 20210005712 - GLASS; GLENN A. ; et al. | 2021-01-07 |
Techniques for forming dual-strain fins for co-integrated n-MOS and p-MOS devices
Grant 10,886,272 - Cea , et al. January 5, 2 | 2021-01-05 |
Group III-V material transistors employing nitride-based dopant diffusion barrier layer
Grant 10,886,408 - Mohapatra , et al. January 5, 2 | 2021-01-05 |
Diverse Transistor Channel Materials Enabled By Thin, Inverse-graded, Germanium-based Layer
App 20200411691 - JAMBUNATHAN; KARTHIK ; et al. | 2020-12-31 |
Transistors With Channel And Sub-channel Regions With Distinct Compositions And Dimensions
App 20200411513 - Jambunathan; Karthik ; et al. | 2020-12-31 |
Selective germanium P-contact metalization through trench
Grant 10,879,353 - Glass , et al. December 29, 2 | 2020-12-29 |
Techniques for controlling transistor sub-fin leakage
Grant 10,879,241 - Glass , et al. December 29, 2 | 2020-12-29 |
Transistors with non-vertical gates
Grant 10,879,365 - Huang , et al. December 29, 2 | 2020-12-29 |
High Mobility Strained Channels For Fin-based Nmos Transistors
App 20200381549 - CEA; STEPHEN M. ; et al. | 2020-12-03 |
High mobility strained channels for fin-based NMOS transistors
Grant 10,854,752 - Cea , et al. December 1, 2 | 2020-12-01 |
Doped Sti To Reduce Source/drain Diffusion For Germanium Nmos Transistors
App 20200365711 - Glass; Glenn A. ; et al. | 2020-11-19 |
Forming Crystalline Source/drain Contacts On Semiconductor Devices
App 20200365585 - JAMBUNATHAN; Karthik ; et al. | 2020-11-19 |
Indium-rich NMOS transistor channels
Grant 10,818,793 - Mohapatra , et al. October 27, 2 | 2020-10-27 |
Transistor devices having source/drain structure configured with high germanium content portion
Grant 10,811,496 - Glass , et al. October 20, 2 | 2020-10-20 |
Integration methods to fabricate internal spacers for nanowire devices
Grant 10,804,357 - Kim , et al. October 13, 2 | 2020-10-13 |
Field Effect Transistors With Gate Electrode Self-aligned To Semiconductor Fin
App 20200321435 - Ma; Sean T. ; et al. | 2020-10-08 |
High-mobility Field Effect Transistors With Wide Bandgap Fin Cladding
App 20200321439 - Ma; Sean T. ; et al. | 2020-10-08 |
Differential work function between gate stack metals to reduce parasitic capacitance
Grant 10,797,150 - Ma , et al. October 6, 2 | 2020-10-06 |
Nanowire For Transistor Integration
App 20200303499 - GLASS; Glenn A. ; et al. | 2020-09-24 |
Pmos And Nmos Contacts In Common Trench
App 20200303373 - Glass; Glenn A. ; et al. | 2020-09-24 |
Contact Resistance Reduction Employing Germanium Overlayer Pre-contact Metalization
App 20200287011 - GLASS; Glenn A. ; et al. | 2020-09-10 |
Deuterium-based Passivation Of Non-planar Transistor Interfaces
App 20200286996 - MAJHI; PRASHANT ; et al. | 2020-09-10 |
Transistors With High Density Channel Semiconductor Over Dielectric Material
App 20200287024 - Dewey; Gilbert ; et al. | 2020-09-10 |
Beaded fin transistor
Grant 10,770,593 - Dewey , et al. Sep | 2020-09-08 |
Transistor Structures Having Multiple Threshold Voltage Channel Materials
App 20200279845 - Ma; Sean T. ; et al. | 2020-09-03 |
Transistor With Isolation Below Source And Drain
App 20200279916 - Rachmady; Willy ; et al. | 2020-09-03 |
Source Electrode And Drain Electrode Protection For Nanowire Transistors
App 20200273998 - JAMBUNATHAN; Karthik ; et al. | 2020-08-27 |
Germanium-rich Channel Transistors Including One Or More Dopant Diffusion Barrier Elements
App 20200273952 - GLASS; GLENN A. ; et al. | 2020-08-27 |
Replacement channel etch for high quality interface
Grant 10,755,984 - Glass , et al. A | 2020-08-25 |
Reducing Band-to-band Tunneling In Semiconductor Devices
App 20200266296 - Chu-Kung; Benjamin ; et al. | 2020-08-20 |
Techniques for forming transistors including group III-V material nanowires using sacrificial group IV material layers
Grant 10,749,032 - Mohapatra , et al. A | 2020-08-18 |
Fin-based III-V/SI or GE CMOS SAGE integration
Grant 10,748,900 - Rachmady , et al. A | 2020-08-18 |
Non-selective Epitaxial Source/drain Deposition To Reduce Dopant Diffusion For Germanium Nmos Transistors
App 20200258982 - A1 | 2020-08-13 |
Layered Substrate For Microelectronic Devices
App 20200258738 - A1 | 2020-08-13 |
Backside contact resistance reduction for semiconductor devices with metallization on both sides
Grant 10,734,412 - Glass , et al. | 2020-08-04 |
Non-planar Semiconductor Device Including A Replacement Channel Structure
App 20200227539 - Dewey; Gilbert ; et al. | 2020-07-16 |
Substrate Defect Blocking Layers For Strained Channel Semiconductor Devices
App 20200219774 - Jambunathan; Karthik ; et al. | 2020-07-09 |
Epitaxial Oxide Plug For Strained Transistors
App 20200220014 - Jambunathan; Karthik ; et al. | 2020-07-09 |
Contact resistance reduction employing germanium overlayer pre-contact metalization
Grant 10,700,178 - Glass , et al. | 2020-06-30 |
Group Iii-v Semiconductor Devices Having Asymmetric Source And Drain Structures
App 20200203169 - MA; Sean T. ; et al. | 2020-06-25 |
Germanium-rich channel transistors including one or more dopant diffusion barrier elements
Grant 10,692,973 - Glass , et al. | 2020-06-23 |
Deuterium-based passivation of non-planar transistor interfaces
Grant 10,692,974 - Majhi , et al. | 2020-06-23 |
Device Isolation By Fixed Charge
App 20200185501 - Ma; Sean T. ; et al. | 2020-06-11 |
Metal To Source/drain Contact Area Using Thin Nucleation Layer And Sacrificial Epitaxial Film
App 20200161440 - Jhaveri; Ritesh ; et al. | 2020-05-21 |
Integration Methods To Fabricate Internal Spacers For Nanowire Devices
App 20200152738 - KIM; Seiyon ; et al. | 2020-05-14 |
Integrated Circuit Contact Structures
App 20200152750 - Morrow; Patrick ; et al. | 2020-05-14 |
Pseudomorphic InGaAs on GaAs for gate-all-around transistors
Grant 10,651,288 - Mohapatra , et al. | 2020-05-12 |
Transistor With Wide Bandgap Channel And Narrow Bandgap Source/drain
App 20200144374 - MA; Sean T. ; et al. | 2020-05-07 |
Transistors With High Concentration Of Germanium
App 20200144362 - MURTHY; Anand S. ; et al. | 2020-05-07 |
III-V finfet transistor with V-groove S/D profile for improved access resistance
Grant 10,644,137 - Rachmady , et al. | 2020-05-05 |
FINFET transistor having a tapered subfin structure
Grant 10,636,912 - Dewey , et al. | 2020-04-28 |
Selective Germanium P-contact Metalization Through Trench
App 20200127091 - Glass; Glenn A. ; et al. | 2020-04-23 |
Strained Tunable Nanowire Structures And Process
App 20200105755 - Cea; Stephen M. ; et al. | 2020-04-02 |
Thin Film Cap To Lower Leakage In Low Band Gap Material Devices
App 20200083354 - SUNG; Seung Hoon ; et al. | 2020-03-12 |
Apparatus and methods to create an active channel having indium rich side and bottom surfaces
Grant 10,586,848 - Mohapatra , et al. | 2020-03-10 |
Transistor with a sub-fin dielectric region under a gate
Grant 10,580,865 - Rachmady , et al. | 2020-03-03 |
Integration methods to fabricate internal spacers for nanowire devices
Grant 10,580,860 - Kim , et al. | 2020-03-03 |
Field Effect Transistors With Wide Bandgap Materials
App 20200066843 - MA; Sean T. ; et al. | 2020-02-27 |
An Indium-containing Fin Of A Transistor Device With An Indium-rich Core
App 20200066855 - MOHAPATRA; Chandra S. ; et al. | 2020-02-27 |
Semiconductor Fin Design To Mitigate Fin Collapse
App 20200066595 - GLASS; GLENN A. ; et al. | 2020-02-27 |
Crystallized silicon carbon replacement material for NMOS source/drain regions
Grant 10,559,689 - Jambunathan , et al. Feb | 2020-02-11 |
Apparatus and methods to create a buffer to reduce leakage in microelectronic transistors
Grant 10,559,683 - Mohapatra , et al. Feb | 2020-02-11 |
Subfin Leakage Suppression Using Fixed Charge
App 20200044059 - Ma; Sean T. ; et al. | 2020-02-06 |
Selective germanium P-contact metalization through trench
Grant 10,553,680 - Glass , et al. Fe | 2020-02-04 |
Low damage self-aligned amphoteric FINFET tip doping
Grant 10,546,858 - Kavalieros , et al. Ja | 2020-01-28 |
Techniques for integration of Ge-rich p-MOS source/drain
Grant 10,541,334 - Glass , et al. Ja | 2020-01-21 |
Contact resistance reduced P-MOS transistors employing Ge-rich contact layer
Grant 10,535,735 - Glass , et al. Ja | 2020-01-14 |
Dopant diffusion barrier for source/drain to curb dopant atom diffusion
Grant 10,529,808 - Mohapatra , et al. J | 2020-01-07 |
Dielectric Lining Layers For Semiconductor Devices
App 20200006501 - Rachmady; Willy ; et al. | 2020-01-02 |
Transistors With Non-vertical Gates
App 20200006510 - Huang; Cheng-Ying ; et al. | 2020-01-02 |
Interconnect Techniques For Electrically Connecting Source/drain Regions Of Stacked Transistors
App 20200006329 - LILAK; AARON D. ; et al. | 2020-01-02 |
Buried Etch-stop Layer To Help Control Transistor Source/drain Depth
App 20200006488 - MEHANDRU; RISHABH ; et al. | 2020-01-02 |
Local Interconnect For Group Iv Source/drain Regions
App 20200006229 - SUNG; SEUNG HOON ; et al. | 2020-01-02 |
Reduced leakage transistors with germanium-rich channel regions
Grant 10,516,021 - Glass , et al. Dec | 2019-12-24 |
Sub-fin sidewall passivation in replacement channel FinFETS
Grant 10,510,848 - Glass , et al. Dec | 2019-12-17 |
III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same
Grant 10,497,814 - Kennel , et al. De | 2019-12-03 |
Transistors Employing Non-selective Deposition Of Source/drain Material
App 20190355721 - JAMBUNATHAN; KARTHIK ; et al. | 2019-11-21 |
Transistor including tensile-strained germanium channel
Grant 10,483,353 - Mohapatra , et al. Nov | 2019-11-19 |
Germanium-rich Channel Transistors Including One Or More Dopant Diffusion Barrier Elements
App 20190348500 - GLASS; Glenn A. ; et al. | 2019-11-14 |
Transistors Employing Cap Layer For Ge-rich Source/drain Regions
App 20190348415 - SUNG; SEUNG HOON ; et al. | 2019-11-14 |
Germanium-rich Channel Transistors Including Carbon-based Dopant Diffusion Barrier
App 20190348501 - GLASS; GLENN A. ; et al. | 2019-11-14 |
Contact Resistance Reduction Employing Germanium Overlayer Pre-contact Metalization
App 20190341464 - GLASS; GLENN A. ; et al. | 2019-11-07 |
Gradient Doping To Lower Leakage In Low Band Gap Material Devices
App 20190341453 - Sung; Seung Hoon ; et al. | 2019-11-07 |
Transistors Employing Carbon-based Etch Stop Layer For Preserving Source/drain Material During Contact Trench Etch
App 20190341300 - GLASS; GLENN A. ; et al. | 2019-11-07 |
A Finfet Transistor Having A Tapered Subfin Structure
App 20190341481 - DEWEY; Gilbert ; et al. | 2019-11-07 |
Apparatus and methods to create a buffer which extends into a gated region of a transistor
Grant 10,461,193 - Mohapatra , et al. Oc | 2019-10-29 |
Well-based integration of heteroepitaxial N-type transistors with P-type transistors
Grant 10,461,082 - Rachmady , et al. Oc | 2019-10-29 |
Techniques For Forming Dual-strain Fins For Co-integrated N-mos And P-mos Devices
App 20190326290 - CEA; STEPHEN M. ; et al. | 2019-10-24 |
High-electron-mobility transistors with heterojunction dopant diffusion barrier
Grant 10,446,685 - Mohapatra , et al. Oc | 2019-10-15 |
Asymmetrical Semiconductor Nanowire Field-effect Transistor
App 20190305085 - Sung; Seung Hoon ; et al. | 2019-10-03 |
High electron mobility transistors with localized sub-fin isolation
Grant 10,431,690 - Rachmady , et al. O | 2019-10-01 |
Techniques for forming transistors on the same die with varied channel materials
Grant 10,418,464 - Glass , et al. Sept | 2019-09-17 |
High mobility field effect transistors with a band-offset semiconductor source/drain spacer
Grant 10,411,007 - Dewey , et al. Sept | 2019-09-10 |
Transistor Source/drain Amorphous Interlayer Arrangements
App 20190273133 - Agrawal; Ashish ; et al. | 2019-09-05 |
Fin sculpting and cladding during replacement gate process for transistor channel applications
Grant 10,403,626 - Glass , et al. Sep | 2019-09-03 |
Prevention of subchannel leakage current in a semiconductor device with a fin structure
Grant 10,403,752 - Jambunathan , et al. Sep | 2019-09-03 |
Art Trench Spacers To Enable Fin Release For Non-lattice Matched Channels
App 20190267289 - DEWEY; Gilbert ; et al. | 2019-08-29 |
Pre-sculpting of Si fin elements prior to cladding for transistor channel applications
Grant 10,396,203 - Glass , et al. A | 2019-08-27 |
Selective Germanium P-contact Metalization Through Trench
App 20190259835 - GLASS; GLENN A. ; et al. | 2019-08-22 |
High-electron-mobility transistors with counter-doped dopant diffusion barrier
Grant 10,388,764 - Mohapatra , et al. A | 2019-08-20 |
Transistor fin formation via cladding on sacrificial core
Grant 10,373,977 - Glass , et al. | 2019-08-06 |
Backside Source/drain Replacement For Semiconductor Devices With Metallization On Both Sides
App 20190221649 - Glass; Glenn A. ; et al. | 2019-07-18 |
Nanowire Transistors Employing Carbon-based Layers
App 20190221641 - Glass; Glenn A. ; et al. | 2019-07-18 |
Epitaxial Buffer To Reduce Sub-channel Leakage In Mos Transistors
App 20190214479 - JAMBUNATHAN; KARTHIK ; et al. | 2019-07-11 |
Integration Methods To Fabricate Internal Spacers For Nanowire Devices
App 20190214461 - KIM; Seiyon ; et al. | 2019-07-11 |
Techniques For Increasing Channel Region Tensile Strain In N-mos Devices
App 20190207015 - MEHANDRU; RISHABH ; et al. | 2019-07-04 |
High mobility field effect transistors with a retrograded semiconductor source/drain
Grant 10,340,374 - Dewey , et al. | 2019-07-02 |
Group Iii-v Material Transistors Employing Nitride-based Dopant Diffusion Barrier Layer
App 20190198658 - Mohapatra; Chandra S. ; et al. | 2019-06-27 |
Transistors With Lattice Matched Gate Structure
App 20190189785 - JAMBUNATHAN; KARTHIK ; et al. | 2019-06-20 |
Transistors Including Source/drain Employing Double-charge Dopants
App 20190189755 - Glass; Glenn A. ; et al. | 2019-06-20 |
Indium-rich Nmos Transistor Channels
App 20190189794 - MOHAPATRA; CHANDRA S. ; et al. | 2019-06-20 |
Semiconductor Device With Released Source And Drain
App 20190172941 - RACHMADY; Willy ; et al. | 2019-06-06 |
Selective germanium p-contact metalization through trench
Grant 10,304,927 - Glass , et al. | 2019-05-28 |
Backside Contact Resistance Reduction For Semiconductor Devices With Metallization On Both Sides
App 20190157310 - GLASS; GLENN A. ; et al. | 2019-05-23 |
Contact resistance reduction employing germanium overlayer pre-contact metalization
Grant 10,297,670 - Glass , et al. | 2019-05-21 |
High-mobility Semiconductor Source/drain Spacer
App 20190148378 - DEWEY; Gilbert ; et al. | 2019-05-16 |
Iii-v Finfet Transistor With V-groove S/d Profile For Improved Access Resistance
App 20190148512 - RACHMADY; Willy ; et al. | 2019-05-16 |
Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfaces
Grant 10,290,709 - Glass , et al. | 2019-05-14 |
A Finfet Transistor Having A Doped Subfin Structure To Reduce Channel To Substrate Leakage
App 20190140054 - DEWEY; Gilbert ; et al. | 2019-05-09 |
Integration methods to fabricate internal spacers for nanowire devices
Grant 10,283,589 - Kim , et al. | 2019-05-07 |
High Mobility Strained Channels For Fin-based Nmos Transistors
App 20190115466 - CEA; STEPHEN M. ; et al. | 2019-04-18 |
Techniques For Integration Of Ge-rich P-mos Source/drain
App 20190109234 - GLASS; GLENN A. ; et al. | 2019-04-11 |
Beaded Fin Transistor
App 20190097055 - DEWEY; GILBERT ; et al. | 2019-03-28 |
Carrier confinement for high mobility channel devices
Grant 10,243,078 - Dewey , et al. | 2019-03-26 |
Indium-rich NMOS transistor channels
Grant 10,229,997 - Mohapatra , et al. | 2019-03-12 |
High-mobility semiconductor source/drain spacer
Grant 10,211,208 - Dewey , et al. Feb | 2019-02-19 |
Integration Methods To Fabricate Internal Spacers For Nanowire Devices
App 20190051725 - KIM; Seiyon ; et al. | 2019-02-14 |
Techniques For Forming Transistors Including Group Iii-v Material Nanowires Using Sacrificial Group Iv Material Layers
App 20190043993 - MOHAPATRA; CHANDRA S. ; et al. | 2019-02-07 |
CMOS FinFET Device Having Strained SiGe Fins and a Strained Si Cladding Layer on the NMOS Channel
App 20190035893 - Cea; Stephen M. ; et al. | 2019-01-31 |
Apparatus And Methods To Create An Active Channel Having Indium Rich Side And Bottom Surfaces
App 20190035889 - Mohapatra; Chandra S. ; et al. | 2019-01-31 |
Dopant Diffusion Barrier For Source/drain To Curb Dopant Atom Diffusion
App 20190035897 - MOHAPATRA; Chandra S. ; et al. | 2019-01-31 |
Etching Fin Core To Provide Fin Doubling
App 20190035926 - MOHAPATRA; Chandra S. ; et al. | 2019-01-31 |
Geometry Tuning Of Fin Based Transistor
App 20190019891 - GLASS; Glenn A. ; et al. | 2019-01-17 |
Pre-sculpting Of Si Fin Elements Prior To Cladding For Transistor Channel Applications
App 20190006508 - GLASS; Glenn A. ; et al. | 2019-01-03 |
Crystallized Silicon Carbon Replacement Material For Nmos Source/drain Regions
App 20180374951 - JAMBUNATHAN; KARTHIK ; et al. | 2018-12-27 |
Transistor Including Tensile-strained Germanium Channel
App 20180358440 - MOHAPATRA; CHANDRA S. ; et al. | 2018-12-13 |
High mobility strained channels for fin-based NMOS transistors
Grant 10,153,372 - Cea , et al. Dec | 2018-12-11 |
High Mobility Field Effect Transistors With A Band-offset Semiconductor Source/drain Spacer
App 20180350798 - Dewey; Gilbert ; et al. | 2018-12-06 |
Techniques for integration of Ge-rich p-MOS source/drain
Grant 10,147,817 - Glass , et al. De | 2018-12-04 |
Transistor Devices Having Source/drain Structure Configured With High Germanium Content Portion
App 20180342582 - GLASS; GLENN A. ; et al. | 2018-11-29 |
Techniques for achieving multiple transistor fin dimensions on a single die
Grant 10,141,311 - Glass , et al. Nov | 2018-11-27 |
Techniques For Achieving Multiple Transistor Fin Dimensions On A Single Die
App 20180337183 - GLASS; GLENN A. ; et al. | 2018-11-22 |
Transistor With A Sub-fin Dielectric Region Under A Gate
App 20180337235 - RACHMADY; WILLY ; et al. | 2018-11-22 |
Reduced Leakage Transistors With Germanium-rich Channel Regions
App 20180331184 - GLASS; GLENN A. ; et al. | 2018-11-15 |
Iii-v Semiconductor Alloys For Use In The Subfin Of Non-planar Semiconductor Devices And Methods Of Forming The Same
App 20180323310 - KENNEL; HAROLD W. ; et al. | 2018-11-08 |
Integration methods to fabricate internal spacers for nanowire devices
Grant 10,121,856 - Kim , et al. November 6, 2 | 2018-11-06 |
Fin-based Iii-v/si Or Ge Cmos Sage Integration
App 20180315757 - RACHMADY; Willy ; et al. | 2018-11-01 |
Differential Work Function Between Gate Stack Metals To Reduce Parasitic Capacitance
App 20180315827 - MA; Sean T. ; et al. | 2018-11-01 |
Transistor device with gate control layer undercutting the gate dielectric
Grant 10,109,628 - Murthy , et al. October 23, 2 | 2018-10-23 |
CMOS FinFET device having strained SiGe fins and a strained Si cladding layer on the NMOS channel
Grant 10,109,711 - Cea , et al. October 23, 2 | 2018-10-23 |
Column IV transistors for PMOS integration
Grant 10,090,383 - Glass , et al. October 2, 2 | 2018-10-02 |
High mobility nanowire fin channel on silicon substrate formed using sacrificial sub-fin
Grant 10,084,043 - Dewey , et al. September 25, 2 | 2018-09-25 |
Enhanced dislocation stress transistor
Grant 10,084,087 - Weber , et al. September 25, 2 | 2018-09-25 |
High Mobility Field Effect Transistors With A Retrograded Semiconductor Source/drain
App 20180261694 - Dewey; Gilbert ; et al. | 2018-09-13 |
CMOS nanowire structure
Grant 10,074,573 - Kim , et al. September 11, 2 | 2018-09-11 |
High-electron-mobility Transistors With Counter-doped Dopant Diffusion Barrier
App 20180254332 - Mohapatra; Chandra S. ; et al. | 2018-09-06 |
High-electron-mobility Transistors With Heterojunction Dopant Diffusion Barrier
App 20180248028 - Mohapatra; Chandra S. ; et al. | 2018-08-30 |
Techniques For Controlling Transistor Sub-fin Leakage
App 20180247939 - GLASS; GLENN A. ; et al. | 2018-08-30 |
Passivation Of Transistor Channel Region Interfaces
App 20180248015 - GLASS; GLENN A. ; et al. | 2018-08-30 |
Deuterium-based Passivation Of Non-planar Transistor Interfaces
App 20180248004 - MAJHI; PRASHANT ; et al. | 2018-08-30 |
Resistance Reduction Under Transistor Spacers
App 20180240874 - WEBER; CORY E. ; et al. | 2018-08-23 |
Low Damage Self-aligned Amphoteric Finfet Tip Doping
App 20180226405 - Kavalieros; Jack T. ; et al. | 2018-08-09 |
Replacement Channel Etch For High Quality Interface
App 20180197789 - GLASS; GLENN A. ; et al. | 2018-07-12 |
Pre-sculpting of Si fin elements prior to cladding for transistor channel applications
Grant 10,014,412 - Glass , et al. July 3, 2 | 2018-07-03 |
Ge/SiGe-channel and III-V-channel transistors on the same die
Grant 9,997,414 - Glass , et al. June 12, 2 | 2018-06-12 |
Apparatus And Methods To Create A Buffer Which Extends Into A Gated Region Of A Transistor
App 20180158958 - Mohapatra; Chandra S. ; et al. | 2018-06-07 |
Pseudomorphic Ingaas On Gaas For Gate-all-around Transistors
App 20180158927 - MOHAPATRA; Chandra S. ; et al. | 2018-06-07 |
High Electron Mobility Transistors With Localized Sub-fin Isolation
App 20180158957 - RACHMADY; Willy ; et al. | 2018-06-07 |
Integration Method For Finfet With Tightly Controlled Multiple Fin Heights
App 20180158737 - KIM; Seiyon ; et al. | 2018-06-07 |
Indium-rich Nmos Transistor Channels
App 20180158944 - MOHAPATRA; CHANDRA S. ; et al. | 2018-06-07 |
Transistor Fin Formation Via Cladding On Sacrifical Core
App 20180158841 - GLASS; GLENN A. ; et al. | 2018-06-07 |
Carbon-based Interface For Epitaxially Grown Source/drain Transistor Regions
App 20180151733 - GLASS; GLENN A. ; et al. | 2018-05-31 |
Multi-height Finfet Device By Selective Oxidation
App 20180151702 - KIM; Seiyon ; et al. | 2018-05-31 |
Resistance Reduction In Transistors Having Epitaxially Grown Source/drain Regions
App 20180151732 - MEHANDRU; RISHABH ; et al. | 2018-05-31 |
Sub-fin Sidewall Passivation In Replacement Channel Finfets
App 20180151677 - GLASS; GLENN A. ; et al. | 2018-05-31 |
Techniques For Integration Of Ge-rich P-mos Source/drain
App 20180145174 - GLASS; GLENN A. ; et al. | 2018-05-24 |
High-mobility Semiconductor Source/drain Spacer
App 20180145077 - DEWEY; Gilbert ; et al. | 2018-05-24 |
Well-based Integration Of Heteroepitaxial N-type Transistors With P-type Transistors
App 20180130801 - Rachmady; Willy ; et al. | 2018-05-10 |
Tin doped III-V material contacts
Grant 9,966,440 - Glass , et al. May 8, 2 | 2018-05-08 |
Integration Methods To Fabricate Internal Spacers For Nanowire Devices
App 20180122901 - KIM; Seiyon ; et al. | 2018-05-03 |
Techniques For Forming Transistors On The Same Die With Varied Channel Materials
App 20180108750 - GLASS; GLENN A. ; et al. | 2018-04-19 |
Apparatus and methods of forming fin structures with asymmetric profile
Grant 9,929,273 - Rachmady , et al. March 27, 2 | 2018-03-27 |
High mobility strained channels for fin-based transistors
Grant 9,893,149 - Cea , et al. February 13, 2 | 2018-02-13 |
High resistance layer for III-V channel deposited on group IV substrates for MOS transistors
Grant 9,882,009 - Glass , et al. January 30, 2 | 2018-01-30 |
Self-aligned 3-d Epitaxial Structures For Mos Device Fabrication
App 20180019170 - GLASS; GLENN A. ; et al. | 2018-01-18 |
Apparatus And Methods Of Forming Fin Structures With Asymmetric Profile
App 20180013000 - Rachmady; Willy ; et al. | 2018-01-11 |
Techniques for integration of Ge-rich p-MOS source/drain contacts
Grant 9,859,424 - Glass , et al. January 2, 2 | 2018-01-02 |
Integration methods to fabricate internal spacers for nanowire devices
Grant 9,859,368 - Kim , et al. January 2, 2 | 2018-01-02 |
Selective Germanium P-contact Metalization Through Trench
App 20170373147 - Glass; Glenn A. ; et al. | 2017-12-28 |
High Mobility Nanowire Fin Channel On Silicon Substrate Formed Using Sacrificial Sub-fin
App 20170358645 - DEWEY; GILBERT ; et al. | 2017-12-14 |
Tensile source drain III-V transistors for mobility improved n-MOS
Grant 9,842,928 - Glass , et al. December 12, 2 | 2017-12-12 |
Diffusion Tolerant Iii-v Semiconductor Heterostructures And Devices Including The Same
App 20170345900 - KENNEL; HAROLD W. ; et al. | 2017-11-30 |
Optimizing Gate Profile For Performance And Gate Fill
App 20170330955 - RAHHAL-ORABI; NADIA M. ; et al. | 2017-11-16 |
Prevention Of Subchannel Leakage Current
App 20170330966 - JAMBUNATHAN; KARTHIK ; et al. | 2017-11-16 |
Thin Channel Region On Wide Subfin
App 20170323963 - GARDNER; Sanaz K. ; et al. | 2017-11-09 |
Apparatus And Methods Of Forming Fin Structures With Sidewall Liner
App 20170323955 - Rachmady; Willy ; et al. | 2017-11-09 |
Carrier Confinement For High Mobility Channel Devices
App 20170323962 - DEWEY; GILBERT ; et al. | 2017-11-09 |
Nanowire transistor devices and forming techniques
Grant 9,812,524 - Glass , et al. November 7, 2 | 2017-11-07 |
Uniform Layers Formed with Aspect Ratio Trench Based Processes
App 20170317187 - GARDNER; Sanaz K. ; et al. | 2017-11-02 |
Field effect transistor structure with abrupt source/drain junctions
Grant 9,793,373 - Murthy , et al. October 17, 2 | 2017-10-17 |
Apparatus And Methods To Create A Doped Sub-structure To Reduce Leakage In Microelectronic Transistors
App 20170278944 - Mohapatra; Chandra S. ; et al. | 2017-09-28 |
Apparatus And Methods To Create A Buffer To Reduce Leakage In Microelectronic Transistors
App 20170278964 - Mohapatra; Chandra S. ; et al. | 2017-09-28 |
Ingaas Epi Structure And Wet Etch Process For Enabling Iii-v Gaa In Art Trench
App 20170263706 - GARDNER; Sanaz K. ; et al. | 2017-09-14 |
Self-aligned contact metallization for reduced contact resistance
Grant 9,754,940 - Glass , et al. September 5, 2 | 2017-09-05 |
Transistor Fabrication Technique Including Sacrificial Protective Layer For Source/drain At Contact Location
App 20170229342 - GLASS; GLENN A. ; et al. | 2017-08-10 |
Apparatus And Methods To Create An Indium Gallium Arsenide Active Channel Having Indium Rich Surfaces
App 20170229543 - Glass; Glenn A. ; et al. | 2017-08-10 |
Self-aligned 3-D epitaxial structures for MOS device fabrication
Grant 9,728,464 - Glass , et al. August 8, 2 | 2017-08-08 |
Transistors With High Concentration Of Boron Doped Germanium
App 20170221724 - MURTHY; ANAND S. ; et al. | 2017-08-03 |
Pre-sculpting Of Si Fin Elements Prior To Cladding For Transistor Channel Applications
App 20170222035 - GLASS; Glenn A. ; et al. | 2017-08-03 |
Enhanced Dislocation Stress Transistor
App 20170222052 - Weber; Cory E. ; et al. | 2017-08-03 |
Selective germanium P-contact metalization through trench
Grant 9,722,023 - Glass , et al. August 1, 2 | 2017-08-01 |
III-V layers for n-type and p-type MOS source-drain contacts
Grant 9,705,000 - Glass , et al. July 11, 2 | 2017-07-11 |
Field Effect Transistor Structure With Abrupt Source/drain Junctions
App 20170186855 - Murthy; Anand S. ; et al. | 2017-06-29 |
Techniques For Forming Ge/sige-channel And Iii-v-channel Transistors On The Same Die
App 20170162447 - GLASS; GLENN A. ; et al. | 2017-06-08 |
Pre-sculpting of Si fin elements prior to cladding for transistor channel applications
Grant 9,653,584 - Glass , et al. May 16, 2 | 2017-05-16 |
Techniques For Achieving Multiple Transistor Fin Dimensions On A Single Die
App 20170133377 - GLASS; Glenn A. ; et al. | 2017-05-11 |
Fin Sculpting And Cladding During Replacement Gate Process For Transistor Channel Applications
App 20170133376 - GLASS; GLENN A. ; et al. | 2017-05-11 |
Cmos Nanowire Structure
App 20170133277 - KIM; Seiyon ; et al. | 2017-05-11 |
Field effect transistor structure with abrupt source/drain junctions
Grant 9,640,634 - Murthy , et al. May 2, 2 | 2017-05-02 |
Transistor fabrication technique including sacrificial protective layer for source/drain at contact location
Grant 9,633,835 - Glass , et al. April 25, 2 | 2017-04-25 |
Transistors with high concentration of boron doped germanium
Grant 9,627,384 - Murthy , et al. April 18, 2 | 2017-04-18 |
CMOS nanowire structure
Grant 9,583,491 - Kim , et al. February 28, 2 | 2017-02-28 |
Integration Methods To Fabricate Internal Spacers For Nanowire Devices
App 20170047400 - Kim; Seiyon ; et al. | 2017-02-16 |
Contact Resistance Reduction Employing Germanium Overlayer Pre-contact Metalization
App 20170047419 - GLASS; GLENN A. ; et al. | 2017-02-16 |
Techniques For Integration Of Ge-rich P-mos Source/drain Contacts
App 20170012124 - GLASS; GLENN A. ; et al. | 2017-01-12 |
Selective Etching For Gate All Around Architectures
App 20170005176 - SUNG; SEUNG HOON ; et al. | 2017-01-05 |
Column Iv Transistors For Pmos Integration
App 20160372547 - GLASS; GLENN A. ; et al. | 2016-12-22 |
High Mobility Strained Channels For Fin-based Nmos Transistors
App 20160351701 - CEA; STEPHEN M. ; et al. | 2016-12-01 |
Iii-v Layers For N-type And P-type Mos Source-drain Contacts
App 20160329431 - GLASS; GLENN A. ; et al. | 2016-11-10 |
Selective Germanium P-contact Metalization Through Trench
App 20160322359 - Glass; Glenn A. ; et al. | 2016-11-03 |
Contact resistance reduction employing germanium overlayer pre-contact metalization
Grant 9,484,432 - Glass , et al. November 1, 2 | 2016-11-01 |
Integration methods to fabricate internal spacers for nanowire devices
Grant 9,484,447 - Kim , et al. November 1, 2 | 2016-11-01 |
Pre-sculpting Of Si Fin Elements Prior To Cladding For Transistor Channel Applications
App 20160308032 - GLASS; Glenn A. ; et al. | 2016-10-20 |
Tensile Source Drain Iii-v Transistors For Mobility Improved N-mos
App 20160293760 - Glass; Glenn A. ; et al. | 2016-10-06 |
Nanowire Transistor Devices And Forming Techniques
App 20160260802 - GLASS; GLENN A. ; et al. | 2016-09-08 |
Column IV transistors for PMOS integration
Grant 9,437,691 - Glass , et al. September 6, 2 | 2016-09-06 |
Techniques For Improving Gate Control Over Transistor Channel By Increasing Effective Gate Length
App 20160240534 - MURTHY; ANAND S. ; et al. | 2016-08-18 |
Nmos And Pmos Strained Devices Without Relaxed Substrates
App 20160240616 - CEA; Stephen M. ; et al. | 2016-08-18 |
III-V layers for N-type and P-type MOS source-drain contacts
Grant 9,397,102 - Glass , et al. July 19, 2 | 2016-07-19 |
High Resistance Layer For Iii-v Channel Deposited On Group Iv Substrates For Mos Transistors
App 20160163802 - GLASS; GLENN A. ; et al. | 2016-06-09 |
Selective germanium P-contact metalization through trench
Grant 9,349,810 - Glass , et al. May 24, 2 | 2016-05-24 |
Nanowire transistor devices and forming techniques
Grant 9,343,559 - Glass , et al. May 17, 2 | 2016-05-17 |
Self-aligned Contact Metallization For Reduced Contact Resistance
App 20160118384 - GLASS; GLENN A. ; et al. | 2016-04-28 |
Cmos Nanowire Structure
App 20160086951 - Kim; Seiyon ; et al. | 2016-03-24 |
High Mobility Strained Channels For Fin-based Transistors
App 20160071934 - Cea; Stephen M. ; et al. | 2016-03-10 |
CMOS nanowire structure
Grant 9,224,810 - Kim , et al. December 29, 2 | 2015-12-29 |
Self-aligned contact metallization for reduced contact resistance
Grant 9,224,735 - Glass , et al. December 29, 2 | 2015-12-29 |
High mobility strained channels for fin-based transistors
Grant 9,184,294 - Cea , et al. November 10, 2 | 2015-11-10 |
III-V layers for N-type and P-type MOS source-drain contacts
Grant 9,153,583 - Glass , et al. October 6, 2 | 2015-10-06 |
Selective germanium P-contact metalization through trench
Grant 9,117,791 - Glass , et al. August 25, 2 | 2015-08-25 |
Strained transistor integration for CMOS
Grant 9,112,029 - Boyanov , et al. August 18, 2 | 2015-08-18 |
Self-aligned contact metallization for reduced contact resistance
Grant 9,059,024 - Glass , et al. June 16, 2 | 2015-06-16 |
Nanowire transistor devices and forming techniques
Grant 9,012,284 - Glass , et al. April 21, 2 | 2015-04-21 |
Contact resistance reduction employing germanium overlayer pre-contact metalization
Grant 8,994,104 - Glass , et al. March 31, 2 | 2015-03-31 |
Conversion of thin transistor elements from silicon to silicon germanium
Grant 8,957,476 - Glass , et al. February 17, 2 | 2015-02-17 |
Transistors with high concentration of boron doped germanium
Grant 8,901,537 - Murthy , et al. December 2, 2 | 2014-12-02 |
Tin doped III-V material contacts
Grant 8,896,066 - Glass , et al. November 25, 2 | 2014-11-25 |
High mobility strained channels for fin-based transistors
Grant 8,847,281 - Cea , et al. September 30, 2 | 2014-09-30 |
Formation of strain-inducing films using hydrogenated amorphous silicon
Grant 8,642,413 - Murthy , et al. February 4, 2 | 2014-02-04 |
Multi-gate semiconductor device with self-aligned epitaxial source and drain
Grant 8,313,999 - Cappellani , et al. November 20, 2 | 2012-11-20 |
Forming abrupt source drain metal gate transistors
Grant 7,951,673 - Lindert , et al. May 31, 2 | 2011-05-31 |
Precursor gas mixture for depositing an epitaxial carbon-doped silicon film
Grant 7,833,883 - Simonelli , et al. November 16, 2 | 2010-11-16 |
Transistor with improved tip profile and method of manufacture thereof
Grant 7,821,044 - Bohr , et al. October 26, 2 | 2010-10-26 |
Method of forming abrupt source drain metal gate transistors
Grant 7,704,833 - Lindert , et al. April 27, 2 | 2010-04-27 |
Field effect transistor structure with abrupt source/drain junctions
Grant 7,682,916 - Murthy , et al. March 23, 2 | 2010-03-23 |
Transistor with improved tip profile and method of manufacture thereof
Grant 7,494,858 - Bohr , et al. February 24, 2 | 2009-02-24 |
Method of fabricating a field effect transistor structure with abrupt source/drain junctions
Grant 7,436,035 - Murthy , et al. October 14, 2 | 2008-10-14 |
Method for forming an integrated circuit
Grant 7,402,872 - Murthy , et al. July 22, 2 | 2008-07-22 |
Method of fabricating a field effect transistor structure with abrupt source/drain junctions
Grant 7,338,873 - Murthy , et al. March 4, 2 | 2008-03-04 |
Epitaxially deposited source/drain
Grant 7,060,576 - Lindert , et al. June 13, 2 | 2006-06-13 |
Method of forming an element of a microelectronic circuit
Grant 6,972,228 - Doyle , et al. December 6, 2 | 2005-12-06 |
Method of making a semiconductor transistor
Grant 6,933,589 - Murthy , et al. August 23, 2 | 2005-08-23 |
Method of fabricating a field effect transistor structure with abrupt source/drain junctions
Grant 6,887,762 - Murthy , et al. May 3, 2 | 2005-05-03 |
Method of making a semiconductor transistor
Grant 6,812,086 - Murthy , et al. November 2, 2 | 2004-11-02 |
Semiconductor transistor having a backfilled channel material
Grant 6,605,498 - Murthy , et al. August 12, 2 | 2003-08-12 |
Methods of making field effect transistor structure with partially isolated source/drain junctions
Grant 6,541,343 - Murthy , et al. April 1, 2 | 2003-04-01 |
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