| Patent | Date |
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N-polar Iii-n Semiconductor Device Structures
App 20220223429 - Romanczyk; Brian ; et al. | 2022-07-14 |
Wafer Bonding For Embedding Active Regions With Relaxed Nanofeatures
App 20220102580 - Reilly; Caroline E. ; et al. | 2022-03-31 |
Novel Approach To Controlling Linearity In N-polar Gan Mishemts
App 20210399121 - Romanczyk; Brian ; et al. | 2021-12-23 |
Iii-n Based Material Structures, Methods, Devices And Circuit Modules Based On Strain Management
App 20210399096 - Mishra; Umesh K. ; et al. | 2021-12-23 |
Structure for increasing mobility in a high electron mobility transistor
Grant 11,101,379 - Romanczyk , et al. August 24, 2 | 2021-08-24 |
Iii-n Transistor Structures With Stepped Cap Layers
App 20200273974 - Guidry; Matthew ; et al. | 2020-08-27 |
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
Grant 10,529,892 - Farrell, Jr. , et al. J | 2020-01-07 |
A Structure For Increasing Mobility In A High Electron Mobility Transistor
App 20190348532 - Romanczyk; Brian ; et al. | 2019-11-14 |
Method To Achieve Active P-type Layer/layers In Iii-nitride Epitaxial Or Device Structures Having Buried P-type Layers
App 20190181329 - Enatsu; Yuuki ; et al. | 2019-06-13 |
Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage
Grant 10,312,361 - Chowdhury , et al. | 2019-06-04 |
TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES
App 20180013035 - Farrell, JR.; Robert M. ; et al. | 2018-01-11 |
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
Grant 9,793,435 - Farrell, Jr. , et al. October 17, 2 | 2017-10-17 |
Method of controlling stress in group-III nitride films deposited on substrates
Grant 9,691,712 - Marchand , et al. June 27, 2 | 2017-06-27 |
Trenched Vertical Power Field-effect Transistors With Improved On-resistance And Breakdown Voltage
App 20170125574 - Chowdhury; Srabanti ; et al. | 2017-05-04 |
Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer
Grant 9,590,088 - Chowdhury , et al. March 7, 2 | 2017-03-07 |
Fabrication of single or multiple gate field plates
Grant 9,496,353 - Chini , et al. November 15, 2 | 2016-11-15 |
Metalorganic Chemical Vapor Deposition Of Oxide Dielectrics On N-polar Iii-nitride Semiconductors With High Interface Quality And Tunable Fixed Interface Charge
App 20160163846 - Liu; Xiang ; et al. | 2016-06-09 |
TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES
App 20160079738 - Farrell; Robert M. ; et al. | 2016-03-17 |
Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge
Grant 9,281,183 - Liu , et al. March 8, 2 | 2016-03-08 |
Interdigitated multiple pixel arrays of light-emitting devices
Grant 9,263,423 - Chakraborty , et al. February 16, 2 | 2016-02-16 |
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
Grant 9,231,376 - Farrell, Jr. , et al. January 5, 2 | 2016-01-05 |
Interdigitated Multiple Pixel Arrays Of Light-emitting Devices
App 20150294960 - Chakraborty; Arpan ; et al. | 2015-10-15 |
Method of controlling stress in group-III nitride films deposited on substrates
Grant 9,129,977 - Marchand , et al. September 8, 2 | 2015-09-08 |
Metalorganic Chemical Vapor Deposition Of Oxide Dielectrics On N-polar Iii-nitride Semiconductors With High Interface Quality And Tunable Fixed Interface Charge
App 20150200286 - Liu; Xiang ; et al. | 2015-07-16 |
Interdigitated multiple pixel arrays of light-emitting devices
Grant 9,076,711 - Chakraborty , et al. July 7, 2 | 2015-07-07 |
(In,Ga,Al)N optoelectronic devices grown on relaxed (In,Ga,Al)N-on-GaN base layers
Grant 9,076,927 - Keller , et al. July 7, 2 | 2015-07-07 |
Current Aperture Vertical Electron Transistors With Ammonia Molecular Beam Epitaxy Grown P-type Gallium Nitride As A Current Blocking Layer
App 20150137137 - Chowdhury; Srabanti ; et al. | 2015-05-21 |
Interdigitated Multiple Pixel Arrays Of Light-emitting Devices
App 20150076533 - Chakraborty; Arpan ; et al. | 2015-03-19 |
Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer
Grant 8,937,338 - Chowdhury , et al. January 20, 2 | 2015-01-20 |
Interdigitated multiple pixel arrays of light-emitting devices
Grant 8,922,110 - Chakraborty , et al. December 30, 2 | 2014-12-30 |
Method Of Controlling Stress In Group-iii Nitride Films Deposited On Substrates
App 20140367698 - Marchand; Hugues ; et al. | 2014-12-18 |
Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition
Grant 8,882,935 - Chakraborty , et al. November 11, 2 | 2014-11-11 |
Method for heteroepitaxial growth of high channel conductivity and high breakdown voltage nitrogen polar high electron mobility transistors
Grant 8,878,249 - Lu , et al. November 4, 2 | 2014-11-04 |
Interdigitated Multiple Pixel Arrays Of Light-emitting Devices
App 20140299900 - Chakraborty; Arpan ; et al. | 2014-10-09 |
Interdigitated multiple pixel arrays of light-emitting devices
Grant 8,796,912 - Chakraborty , et al. August 5, 2 | 2014-08-05 |
TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES
App 20140211820 - Farrell, JR.; Robert M. ; et al. | 2014-07-31 |
(in,ga,al)n Optoelectronic Devices Grown On Relaxed (in,ga,al)n-on-gan Base Layers
App 20140131730 - Keller; Stacia ; et al. | 2014-05-15 |
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
Grant 8,686,466 - Farrell, Jr. , et al. April 1, 2 | 2014-04-01 |
In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N
Grant 8,643,024 - Chakraborty , et al. February 4, 2 | 2014-02-04 |
Method For Heteroepitaxial Growth Of High Channel Conductivity And High Breakdown Voltage Nitrogen Polar High Electron Mobility Transistors
App 20130307027 - Lu; Jing ; et al. | 2013-11-21 |
Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials
Grant 8,558,285 - Mishra , et al. October 15, 2 | 2013-10-15 |
Fabrication Of Nonpolar Indium Gallium Nitride Thin Films, Heterostructures, And Devices By Metalorganic Chemical Vapor Deposition
App 20130264540 - Chakraborty; Arpan ; et al. | 2013-10-10 |
Field-effect transistor with compositionally graded nitride layer on a silicaon substrate
Grant 8,525,230 - Marchand , et al. September 3, 2 | 2013-09-03 |
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
Grant 8,502,246 - Chakraborty , et al. August 6, 2 | 2013-08-06 |
Method for heteroepitaxial growth of high-quality N-face gallium nitride, indium nitride, and aluminum nitride and their alloys by metal organic chemical vapor deposition
Grant 8,455,885 - Keller , et al. June 4, 2 | 2013-06-04 |
Interdigitated Multiple Pixel Arrays Of Light-emitting Devices
App 20130015760 - Chakraborty; Arpan ; et al. | 2013-01-17 |
Current Aperture Vertical Electron Transistors With Ammonia Molecular Beam Epitaxy Grown P-type Gallium Nitride As A Current Blocking Layer
App 20120319127 - Chowdhury; Srabanti ; et al. | 2012-12-20 |
Method for fabricating a direct wafer bonded optoelectronic device
Grant 8,334,151 - Murai , et al. December 18, 2 | 2012-12-18 |
High efficiency LEDs with tunnel junctions
Grant 8,324,637 - Ibbetson , et al. December 4, 2 | 2012-12-04 |
Interdigitated multiple pixel arrays of light-emitting devices
Grant 8,274,206 - Chakraborty , et al. September 25, 2 | 2012-09-25 |
NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES
App 20120205623 - Craven; Michael D. ; et al. | 2012-08-16 |
METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN, AND AIN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION
App 20120193638 - Keller; Stacia ; et al. | 2012-08-02 |
Iii-nitride Flip-chip Solar Cells
App 20120180868 - Farrell; Robert M. ; et al. | 2012-07-19 |
Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition
Grant 8,193,020 - Keller , et al. June 5, 2 | 2012-06-05 |
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
Grant 8,188,458 - Craven , et al. May 29, 2 | 2012-05-29 |
Textured Iii-v Semiconductor
App 20120104411 - Iza; Michael ; et al. | 2012-05-03 |
IN-SITU DEFECT REDUCTION TECHNIQUES FOR NONPOLAR AND SEMIPOLAR (Al, Ga, In)N
App 20120091467 - Chakraborty; Arpan ; et al. | 2012-04-19 |
Method Of Controlling Stress In Group-iii Nitride Films Deposited On Substrates
App 20120068191 - Marchand; Hugues ; et al. | 2012-03-22 |
Low resistance tunnel junctions in wide band gap materials and method of making same
Grant 8,124,957 - Ibbetson , et al. February 28, 2 | 2012-02-28 |
Methods to shape the electric field in electron devices, passivate dislocations and point defects, and enhance the luminescence efficiency of optical devices
Grant 8,114,717 - Palacios , et al. February 14, 2 | 2012-02-14 |
In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N
Grant 8,105,919 - Chakraborty , et al. January 31, 2 | 2012-01-31 |
Polarization-induced barriers for N-face nitride-based electronics
Grant 8,039,352 - Mishra , et al. October 18, 2 | 2011-10-18 |
NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES
App 20110204329 - Craven; Michael D. ; et al. | 2011-08-25 |
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
Grant 7,982,208 - Craven , et al. July 19, 2 | 2011-07-19 |
METHOD USING LOW TEMPERATURE WAFER BONDING TO FABRICATE TRANSISTORS WITH HETEROJUNCTIONS OF Si(Ge) TO III-N MATERIALS
App 20110169050 - Mishra; Umesh K. ; et al. | 2011-07-14 |
Interdigitated Multiple Pixel Arrays Of Light-emitting Devices
App 20110156572 - Chakraborty; Arpan ; et al. | 2011-06-30 |
N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor
Grant 7,948,011 - Rajan , et al. May 24, 2 | 2011-05-24 |
Method Of Controlling Stress In Group-iii Nitride Films Deposited On Substrates
App 20110108886 - Marchand; Hugues ; et al. | 2011-05-12 |
N-face high electron mobility transistors with low buffer leakage and low parasitic resistance
Grant 7,935,985 - Mishra , et al. May 3, 2 | 2011-05-03 |
Interdigitated multiple pixel arrays of light-emitting devices
Grant 7,911,126 - Chakraborty , et al. March 22, 2 | 2011-03-22 |
TECHNIQUE FOR DEVELOPMENT OF HIGH CURRENT DENSITY HETEROJUNCTION FIELD EFFECT TRANSISTORS BASED ON (10-10)-PLANE GaN BY DELTA-DOPING
App 20110057198 - Fujiwara; Tetsuya ; et al. | 2011-03-10 |
STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga,Al,In,B)N LASER DIODES
App 20110044364 - Farrell; Robert M. ; et al. | 2011-02-24 |
Fabrication Of Single Or Multiple Gate Field Plates
App 20110018062 - Chini; Alessandro ; et al. | 2011-01-27 |
N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor
App 20100264461 - Rajan; Siddharth ; et al. | 2010-10-21 |
Fabrication of single or multiple gate field plates
Grant 7,812,369 - Chini , et al. October 12, 2 | 2010-10-12 |
High Efficiency Leds With Tunnel Junctions
App 20100224860 - IBBETSON; James P. ; et al. | 2010-09-09 |
IN-SITU DEFECT REDUCTION TECHNIQUES FOR NONPOLAR AND SEMIPOLAR (Al, Ga, In)N
App 20100193911 - Chakraborty; Arpan ; et al. | 2010-08-05 |
(Al,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONIC APPLICATIONS, AND ITS FABRICATION METHOD
App 20100187555 - Murai; Akihiko ; et al. | 2010-07-29 |
High efficiency LED with tunnel junction layer
Grant 7,737,451 - Ibbetson , et al. June 15, 2 | 2010-06-15 |
P-GaN/AlGaN/AlN/GaN enhancement-mode field effect transistor
Grant 7,728,356 - Suh , et al. June 1, 2 | 2010-06-01 |
In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N
Grant 7,723,216 - Chakraborty , et al. May 25, 2 | 2010-05-25 |
(Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method
Grant 7,719,020 - Murai , et al. May 18, 2 | 2010-05-18 |
Method Of Fabricating Semi-insulating Gallium Nitride Using An Aluminum Gallium Nitride Blocking Layer
App 20100109018 - Chen; Zhen ; et al. | 2010-05-06 |
METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN, AND AlN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION
App 20090246944 - Keller; Stacia ; et al. | 2009-10-01 |
Interdigitated Multiple Pixel Arrays Of Light-emitting Devices
App 20090230411 - Chakraborty; Arpan ; et al. | 2009-09-17 |
Polarization-induced Barriers For N-face Nitride-based Electronics
App 20090218599 - Mishra; Umesh K. ; et al. | 2009-09-03 |
Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same
Grant 7,525,130 - Mishra , et al. April 28, 2 | 2009-04-28 |
Interdigitated multi-pixel arrays for the fabrication of light-emitting devices with very low series-resistances and improved heat-sinking
Grant 7,518,305 - Chakraborty , et al. April 14, 2 | 2009-04-14 |
Method To Fabricate Iii-n Semiconductor Devices On The N-face Of Layers Which Are Grown In The Iii-face Direction Using Wafer Bonding And Substrate Removal
App 20090085065 - Mishra; Umesh K. ; et al. | 2009-04-02 |
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
Grant 7,504,274 - Chakraborty , et al. March 17, 2 | 2009-03-17 |
High Breakdown Enhancement Mode Gallium Nitride Based High Electron Mobility Transistors With Integrated Slant Field Plate
App 20080308813 - Suh; Chang Soo ; et al. | 2008-12-18 |
P-GaN/AlGaN/AlN/GaN ENHANCEMENT-MODE FIELD EFFECT TRANSISTOR
App 20080296618 - Suh; Chang Soo ; et al. | 2008-12-04 |
METHOD USING LOW TEMPERATURE WAFER BONDING TO FABRICATE TRANSISTORS WITH HETEROJUNCTIONS OF Si(Ge) TO III-N MATERIALS
App 20080296617 - Mishra; Umesh K. ; et al. | 2008-12-04 |
Dual Surface-roughened N-face High-brightness Led
App 20080277682 - Mishra; Umesh K. ; et al. | 2008-11-13 |
Method To Fabricate Iii-n Field Effect Transistors Using Ion Implantation With Reduced Dopant Activation And Damage Recovery Temperature
App 20080258150 - McCarthy; Lee S. ; et al. | 2008-10-23 |
N-face High Electron Mobility Transistors With Low Buffer Leakage And Low Parasitic Resistance
App 20080237640 - Mishra; Umesh K. ; et al. | 2008-10-02 |
Gated Electrodes For Electrolysis And Electrosynthesis
App 20080116080 - Lal; Rakesh K. ; et al. | 2008-05-22 |
LIGHT EMITTING DIODE AND LASER DIODE USING N-FACE GaN, InN, AND AlN AND THEIR ALLOYS
App 20080111144 - Fichtenbaum; Nicholas A. ; et al. | 2008-05-15 |
Group III nitride based flip-chip integrated circuit and method for fabricating
Grant 7,354,782 - Mishra , et al. April 8, 2 | 2008-04-08 |
Polarization-induced Tunnel Junction
App 20080078439 - Grundmann; Michael ; et al. | 2008-04-03 |
Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications
Grant 7,344,958 - Murai , et al. March 18, 2 | 2008-03-18 |
Methods to shape the electric field in electron devices, passivate dislocations and point defects, and enhance the luminescence efficiency of optical devices
App 20070224710 - Palacios; Tomas ; et al. | 2007-09-27 |
Low resistance tunnel junctions in wide band gap materials and method of making same
App 20070194300 - Ibbetson; James P. ; et al. | 2007-08-23 |
High efficiency LEDs with tunnel junctions
App 20070194330 - Ibbetson; James P. ; et al. | 2007-08-23 |
Fabrication of single or multiple gate field plates
App 20070059873 - Chini; Alessandro ; et al. | 2007-03-15 |
(Al, Ga, In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method
App 20070001186 - Murai; Akihiko ; et al. | 2007-01-04 |
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
App 20060278865 - Craven; Michael D. ; et al. | 2006-12-14 |
Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same
App 20060231860 - Mishra; Umesh K. ; et al. | 2006-10-19 |
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
Grant 7,091,514 - Craven , et al. August 15, 2 | 2006-08-15 |
Interdigitated multi-pixel arrays for the fabrication of light-emitting devices with very low series-resistances and improved heat-sinking
App 20060091786 - Chakraborty; Arpan ; et al. | 2006-05-04 |
Method for wafer bonding (Al, In, Ga)N and Zn(S, Se) for optoelectronic applications
App 20060009006 - Murai; Akihiko ; et al. | 2006-01-12 |
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
App 20050040385 - Craven, Michael D. ; et al. | 2005-02-24 |
Group III nitride based flip-chip integrated circuit and method for fabricating
App 20050006669 - Mishra, Umesh K. ; et al. | 2005-01-13 |
Group III nitride based flip-chip intergrated circuit and method for fabricating
Grant 6,825,559 - Mishra , et al. November 30, 2 | 2004-11-30 |
Group III nitride based flip-chip intergrated circuit and method for fabricating
App 20040130037 - Mishra, Umesh K. ; et al. | 2004-07-08 |
Method of making high current, high voltage breakdown field effect transistor
Grant 5,180,681 - Mishra , et al. January 19, 1 | 1993-01-19 |
Hemt structure with passivated donor layer
Grant 5,172,197 - Nguyen , et al. December 15, 1 | 1992-12-15 |
High current, high voltage breakdown field effect transistor
Grant 5,084,743 - Mishra , et al. January 28, 1 | 1992-01-28 |
Microelectronic electron emitter
Grant 5,077,597 - Mishra December 31, 1 | 1991-12-31 |
Fabrication of self-aligned, T-gate HEMT
Grant 5,053,348 - Mishra , et al. October 1, 1 | 1991-10-01 |
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