Miles; Donald S.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Miles; Donald S..The latest application filed is for "plasma dry etch process for metal-containing gates".

Company Profile

0.9.13

Miles; Donald S. - Dallas TX
Miles; Donald S. - Plano TX

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Plasma Dry Etch Process For Metal-containing Gates App 20080242072 - Choi; Jinhan ; et al.	2008-10-02
Method for manufacturing a semiconductor device containing metal silicide regions Grant 7,422,967 - DeLoach , et al. September 9, 2	2008-09-09
Silicide formation using a low temperature anneal process Grant 7,335,595 - Robertson , et al. February 26, 2	2008-02-26
Integrated circuit metal silicide method Grant 7,208,409 - Lu , et al. April 24, 2	2007-04-24
Novel method for manufacturing a semiconductor device containing metal silicide regions App 20060258091 - DeLoach; Juanita ; et al.	2006-11-16
Silicide method for CMOS integrated circuits Grant 7,029,967 - Zhao , et al. April 18, 2	2006-04-18
Silicide method for CMOS integrated circuits App 20060019478 - Zhao; Song ; et al.	2006-01-26
Silicide formation using a low temperature anneal process App 20060014387 - Robertson; Lance S. ; et al.	2006-01-19
Integrated circuit metal silicide method App 20050208764 - Lu, Jiong-Ping ; et al.	2005-09-22
Reducing dopant losses during annealing processes App 20050093034 - Miles, Donald S.	2005-05-05
Nickel silicide - silicon nitride adhesion through surface passivation App 20050090087 - Lu, Jiong-Ping ; et al.	2005-04-28
Reducing dopant losses during annealing processes Grant 6,833,292 - Miles December 21, 2	2004-12-21
Nickel silicide--silicon nitride adhesion through surface passivation Grant 6,831,008 - Lu , et al. December 14, 2	2004-12-14
Semiconductor device fabrication methods for inhibiting carbon out-diffusion in wafers having carbon-containing regions Grant 6,830,980 - Mansoori , et al. December 14, 2	2004-12-14
Reducing dopant losses during annealing processes App 20040188752 - Miles, Donald S.	2004-09-30
Semiconductor device fabrication methods for inhibiting carbon out-diffusion in wafers having carbon-containing regions App 20040185629 - Mansoori, Majid Movahed ; et al.	2004-09-23
Method of CMOS source/drain extension with the PMOS implant spaced by poly oxide and cap oxide from the gates Grant 6,737,354 - Miles , et al. May 18, 2	2004-05-18
Nickel silicide - silicon nitride adhesion through surface passivation App 20040061184 - Lu, Jiong-Ping ; et al.	2004-04-01
Source/drain extension fabrication process with direct implantation Grant 6,709,938 - Miles , et al. March 23, 2	2004-03-23
Nickel SALICIDE process technology for CMOS devices App 20030235973 - Lu, Jiong-Ping ; et al.	2003-12-25
Source/drain extension fabrication process with direct implantation App 20030040169 - Miles, Donald S. ; et al.	2003-02-27
Source/drain extension fabrication process App 20030017674 - Miles, Donald S. ; et al.	2003-01-23

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