| Patent | Date |
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Microelectronic Devices Including Conductive Levels Having Varying Compositions, And Related Memory Devices, Electronic Systems, And Methods
App 20220310522 - Greenlee; Jordan D. ; et al. | 2022-09-29 |
Methods Of Forming Microelectronic Devices, And Related Microelectronic Devices, Memory Devices, And Electronic Systems
App 20220302032 - Greenlee; Jordan D. ; et al. | 2022-09-22 |
Apparatuses Including A Conductive Contact Including A Dielectric Material Surrounded By A Conductive Material
App 20220254727 - Greenlee; Jordan D. ; et al. | 2022-08-11 |
Microelectronic Devices Including Staircase Structures, And Related Memory Devices And Electronic Systems
App 20220238444 - Greenlee; Jordan D. ; et al. | 2022-07-28 |
Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems
Grant 11,393,756 - Greenlee , et al. July 19, 2 | 2022-07-19 |
Apparatus including a dielectric material in a central portion of a contact via, and related methods, memory devices and electronic systems
Grant 11,342,265 - Greenlee , et al. May 24, 2 | 2022-05-24 |
Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems
Grant 11,315,877 - Greenlee , et al. April 26, 2 | 2022-04-26 |
Conductive Interconnects
App 20220044999 - Greenlee; Jordan D. ; et al. | 2022-02-10 |
Assemblies Which Include Wordlines Having a First Metal-Containing Material at Least Partially Surrounding a Second Metal-Containing Material and Having Different Crystallinity than the Second Metal-Containing Material
App 20220028996 - Greenlee; Jordan D. ; et al. | 2022-01-27 |
Assemblies which include wordlines having a first metal-containing material at least partially surrounding a second metal-containing material and having different crystallinity than the second metal-containing material
Grant 11,158,718 - Greenlee , et al. October 26, 2 | 2021-10-26 |
Methods Of Forming Microelectronic Devices, And Related Microelectronic Devices, Memory Devices, And Electronic Systems
App 20210287989 - Greenlee; Jordan D. ; et al. | 2021-09-16 |
Methods Of Forming Microelectronic Devices, And Related Microelectronic Devices, Memory Devices, And Electronic Systems
App 20210287990 - Greenlee; Jordan D. ; et al. | 2021-09-16 |
Assemblies Having Conductive Structures with Three or More Different Materials
App 20210202710 - Economy; David Ross ; et al. | 2021-07-01 |
Apparatus Including A Dielectric Material In A Central Portion Of A Contact Via, And Related Methods, Memory Devices And Electronic Systems
App 20210167020 - Greenlee; Jordan D. ; et al. | 2021-06-03 |
Semiconductor Devices Comprising Threshold Switching Materials
App 20210151676 - Chan; Tsz W. ; et al. | 2021-05-20 |
Assemblies having conductive structures with three or more different materials
Grant 10,957,775 - Economy , et al. March 23, 2 | 2021-03-23 |
Integrated structures with conductive regions having at least one element from group 2 of the periodic table
Grant 10,957,644 - Petz , et al. March 23, 2 | 2021-03-23 |
Methods of forming integrated assemblies
Grant 10,943,921 - Greenlee , et al. March 9, 2 | 2021-03-09 |
Methods of Filling Openings with Conductive Material, and Assemblies Having Vertically-Stacked Conductive Structures
App 20210066332 - Greenlee; Jordan D. ; et al. | 2021-03-04 |
Methods of forming memory cells and memory devices
Grant 10,923,657 - Chan , et al. February 16, 2 | 2021-02-16 |
Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillars
Grant 10,916,564 - Economy , et al. February 9, 2 | 2021-02-09 |
Assemblies Having Conductive Structures with Three or More Different Materials
App 20210005732 - Economy; David Ross ; et al. | 2021-01-07 |
Methods of filling openings with conductive material, and assemblies having vertically-stacked conductive structures
Grant 10,840,255 - Greenlee , et al. November 17, 2 | 2020-11-17 |
Assemblies Which Include Wordlines Having a First Metal-Containing Material at Least Partially Surrounding a Second Metal-Containing Material and Having Different Crystallinity than the Second Metal-Containing Material
App 20200328284 - Greenlee; Jordan D. ; et al. | 2020-10-15 |
Assemblies Having Vertically-Extending Structures, and Methods of Forming Assemblies Having Vertically-Extending Channel Materia
App 20200266210 - Economy; David Ross ; et al. | 2020-08-20 |
Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillars
Grant 10,700,091 - Economy , et al. | 2020-06-30 |
Semiconductor Devices And Electronic Systems Including An Etch Stop Material, And Related Methods
App 20200185406 - Li; Haoyu ; et al. | 2020-06-11 |
Methods of Forming Integrated Assemblies
App 20200161332 - Greenlee; Jordan D. ; et al. | 2020-05-21 |
Methods of Filling Openings with Conductive Material, and Assemblies Having Vertically-Stacked Conductive Structures
App 20200152651 - Greenlee; Jordan D. ; et al. | 2020-05-14 |
Methods of filling horizontally-extending openings of integrated assemblies
Grant 10,573,661 - Greenlee , et al. Feb | 2020-02-25 |
Assemblies having vertically-stacked conductive structures
Grant 10,559,579 - Greenlee , et al. Feb | 2020-02-11 |
Integrated assemblies and methods of forming integrated assemblies
Grant 10,546,848 - Billingsley , et al. Ja | 2020-01-28 |
Integrated Assemblies and Methods of Forming Integrated Assemblies
App 20190355711 - Billingsley; Daniel ; et al. | 2019-11-21 |
Methods Of Forming Memory Cells And Memory Devices
App 20190348603 - Chan; Tsz W. ; et al. | 2019-11-14 |
Methods of Filling Openings with Conductive Material, and Assemblies Having Vertically-Stacked Conductive Structures
App 20190333924 - Greenlee; Jordan D. ; et al. | 2019-10-31 |
Assemblies Having Vertically-Extending Structures, and Methods of Forming Assemblies Having Vertically-Extending Channel Materia
App 20190304996 - Economy; David Ross ; et al. | 2019-10-03 |
Methods of forming memory cells and semiconductor devices
Grant 10,418,554 - Chan , et al. Sept | 2019-09-17 |
Integrated Structures with Conductive Regions Having At Least One Element from Group 2 of the Periodic Table
App 20190244908 - Petz; Christopher W. ; et al. | 2019-08-08 |
Methods of filling openings with conductive material, and assemblies having vertically-stacked conductive structures
Grant 10,361,214 - Greenlee , et al. | 2019-07-23 |
Methods of Filling Horizontally-Extending Openings of Integrated Assemblies
App 20190221580 - Greenlee; Jordan D. ; et al. | 2019-07-18 |
Integrated assemblies and methods of forming integrated assemblies
Grant 10,354,989 - Billingsley , et al. July 16, 2 | 2019-07-16 |
Assemblies having vertically-extending structures
Grant 10,355,014 - Economy , et al. July 16, 2 | 2019-07-16 |
Assemblies Having Vertically-Extending Structures, and Methods of Forming Assemblies Having Vertically-Extending Channel Materia
App 20190198519 - Economy; David Ross ; et al. | 2019-06-27 |
Methods of Filling Openings with Conductive Material, and Assemblies Having Vertically-Stacked Conductive Structures
App 20190189630 - Greenlee; Jordan D. ; et al. | 2019-06-20 |
Methods of filling horizontally-extending openings of integrated assemblies
Grant 10,283,524 - Greenlee , et al. | 2019-05-07 |
Methods Of Forming Memory Cells And Semiconductor Devices
App 20190067573 - Chan; Tsz W. ; et al. | 2019-02-28 |
Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same
Grant 10,193,064 - Chan , et al. Ja | 2019-01-29 |
Assemblies having vertically-stacked conductive structures
Grant 10,170,493 - Greenlee , et al. J | 2019-01-01 |
Memory Cells Including Dielectric Materials, Memory Devices Including The Memory Cells, And Methods Of Forming Same
App 20170309818 - Chan; Tsz W. ; et al. | 2017-10-26 |
Memory cells including dielectric materials, memory devices including the memory cells, and methods of forming same
Grant 9,716,225 - Chan , et al. July 25, 2 | 2017-07-25 |
Forming Memory Using High Power Impulse Magnetron Sputtering
App 20160155619 - Hu; Yongjun Jeff ; et al. | 2016-06-02 |
Memory Cells Including Dielectric Materials, Memory Devices Including The Memory Cells, And Methods Of Forming Same
App 20160064666 - Chan; Tsz W. ; et al. | 2016-03-03 |
Forming memory using high power impulse magnetron sputtering
Grant 9,249,498 - Hu , et al. February 2, 2 | 2016-02-02 |
Chalcogenide Material And Methods For Forming And Operating Devices Incorporating The Same
App 20140268991 - Hu; Yongjun J. ; et al. | 2014-09-18 |
Forming Memory Using High Power Impulse Magnetron Sputtering
App 20110315543 - Hu; Yongjun Jeff ; et al. | 2011-12-29 |
Conductive transistor structure for a semiconductor device and method for forming same
App 20040207030 - McTeer, Everett A. | 2004-10-21 |
Antireflective coating and field emission display device, semiconductor device and wiring line comprising same
Grant 6,690,077 - McTeer , et al. February 10, 2 | 2004-02-10 |
Antireflective coating and wiring line stack
Grant 6,040,613 - McTeer , et al. March 21, 2 | 2000-03-21 |
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