Matsuki; Takeo

Patent Applications and Registrations

Patent applications and USPTO patent grants for Matsuki; Takeo.The latest application filed is for "semiconductor device and manufacturing method thereof".

Company Profile

0.14.16

Matsuki; Takeo - Ibaraki JP
Matsuki; Takeo - Kanagawa N/A JP
Matsuki; Takeo - Yokohama-shi JP
Matsuki; Takeo - Tsukuba-Shi JP
Matsuki; Takeo - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Field effect transistor and semiconductor device, and method for manufacturing same Grant 8,581,350 - Matsuki November 12, 2	2013-11-12
Method of manufacturing semiconductor device, and semiconductor device Grant 8,466,053 - Matsuki , et al. June 18, 2	2013-06-18
Semiconductor Device And Manufacturing Method Thereof App 20130009234 - Matsuki; Takeo	2013-01-10
Semiconductor device and manufacturing method thereof Grant 8,329,540 - Matsuki December 11, 2	2012-12-11
Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereof Grant 8,299,536 - Matsuki October 30, 2	2012-10-30
Field Effect Transistor And Semiconductor Device, And Method For Manufacturing Same App 20120228680 - MATSUKI; Takeo	2012-09-13
Semiconductor Device And Manufacturing Method Therefor App 20120193728 - MATSUKI; Takeo	2012-08-02
Semiconductor device and manufacturing method thereof App 20110241097 - Matsuki; Takeo	2011-10-06
Method Of Manufacturing Semiconductor Device, And Semiconductor Device App 20110241087 - MATSUKI; Takeo ; et al.	2011-10-06
Manufacturing A Semiconductor Device App 20110175172 - MATSUKI; Takeo	2011-07-21
Substrate structure Grant 7,969,741 - Hayakawa , et al. June 28, 2	2011-06-28
Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereof App 20110031553 - Matsuki; Takeo	2011-02-10
Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereof Grant 7,816,213 - Matsuki October 19, 2	2010-10-19
Portable Terminal App 20100184490 - Ueta; Yoshiaki ; et al.	2010-07-22
Substrate Structure App 20100020497 - Hayakawa; Haruo ; et al.	2010-01-28
Semiconductor Device App 20090057787 - MATSUKI; Takeo ; et al.	2009-03-05
Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereof App 20080211000 - Matsuki; Takeo	2008-09-04
Field Effect Transistor And Semiconductor Device, And Method For Manufacturing Same App 20080105910 - MATSUKI; Takeo	2008-05-08
Semiconductor device and manufacturing method thereof App 20060214198 - Matsuki; Takeo ; et al.	2006-09-28
Semiconductor device structure and method for manufacturing the same Grant 6,914,336 - Matsuki , et al. July 5, 2	2005-07-05
Method of manufacturing a field effect transistor having a two-layered gate electrode App 20030122179 - Matsuki, Takeo ; et al.	2003-07-03
Semiconductor device and manufacturing method thereof Grant 6,545,360 - Ohkubo , et al. April 8, 2	2003-04-08
Field effect transistor having a two layered gate electrode Grant 6,531,749 - Matsuki , et al. March 11, 2	2003-03-11
Semiconductor device and manufacturing method thereof App 20020031916 - Ohkubo, Hiroaki ; et al.	2002-03-14
Semiconductor device structure and method for manufacturing the same App 20010010402 - Matsuki, Takeo ; et al.	2001-08-02
Semiconductor device and method of fabricating the same Grant 6,121,083 - Matsuki September 19, 2	2000-09-19
Thin film formation method for ferroelectric materials Grant 5,976,946 - Matsuki , et al. November 2, 1	1999-11-02
Method for manufacturing a semiconductor memory device having a ferroelectric capacitor Grant 5,960,252 - Matsuki , et al. September 28, 1	1999-09-28

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