| Patent | Date |
|---|
Multibit ferroelectric memory cells and methods for forming the same
Grant 11,450,687 - Tirukkonda , et al. September 20, 2 | 2022-09-20 |
Three-dimensional Memory Device Including Discrete Charge Storage Elements With Laterally-protruding Profiles And Methods Of Making Thereof
App 20220285386 - SAID; Ramy Nashed Bassely ; et al. | 2022-09-08 |
Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same
Grant 11,437,270 - Sharangpani , et al. September 6, 2 | 2022-09-06 |
Three-dimensional Memory Device Including Discrete Charge Storage Elements And Methods For Forming The Same
App 20220278216 - PITNER; Xue Bai ; et al. | 2022-09-01 |
Semiconductor device including having metal organic framework interlayer dielectric layer between metal lines and methods of forming the same
Grant 11,430,736 - Said , et al. August 30, 2 | 2022-08-30 |
Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same
Grant 11,424,265 - Rajashekhar , et al. August 23, 2 | 2022-08-23 |
Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same
Grant 11,424,231 - Rajashekhar , et al. August 23, 2 | 2022-08-23 |
Three-dimensional Memory Array Including Dual Work Function Floating Gates And Method Of Making The Same
App 20220254798 - SAID; Ramy Nashed Bassely ; et al. | 2022-08-11 |
Three-dimensional Memory Device Including Multi-bit Charge Storage Elements And Methods For Forming The Same
App 20220254797 - SAID; Ramy Nashed Bassely ; et al. | 2022-08-11 |
Three Dimensional Semiconductor Device Containing Composite Contact Via Structures And Methods Of Making The Same
App 20220246517 - TITUS; Monica ; et al. | 2022-08-04 |
Three-dimensional Memory Device Including Molybdenum Carbide Or Carbonitride Liners And Methods Of Forming The Same
App 20220238453 - SHARANGPANI; Rahul ; et al. | 2022-07-28 |
Methods for reusing substrates during manufacture of a bonded assembly including a logic die and a memory die
Grant 11,398,451 - Baraskar , et al. July 26, 2 | 2022-07-26 |
Three-dimensional Ferroelectric Memory Device Containing Lattice-matched Templates And Methods Of Making The Same
App 20220231048 - SHARANGPANI; Rahul ; et al. | 2022-07-21 |
Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the same
Grant 11,393,780 - Said , et al. July 19, 2 | 2022-07-19 |
Method Of Making A Three-dimensional Memory Device Using Composite Hard Masks For Formation Of Deep Via Openings
App 20220223470 - TIRUKKONDA; Roshan Jayakhar ; et al. | 2022-07-14 |
Three-dimensional memory device including discrete charge storage elements and methods of forming the same
Grant 11,387,244 - Makala , et al. July 12, 2 | 2022-07-12 |
Three-dimensional memory device containing metal-organic framework inter-word line insulating layers
Grant 11,387,250 - Said , et al. July 12, 2 | 2022-07-12 |
Fluorine-free tungsten deposition process employing in-situ oxidation and apparatuses for effecting the same
Grant 11,377,733 - Zhou , et al. July 5, 2 | 2022-07-05 |
Method Of Making A Three-dimensional Memory Device Using Composite Hard Masks For Formation Of Deep Via Openings
App 20220208785 - TITUS; Monica ; et al. | 2022-06-30 |
Method Of Making A Three-dimensional Memory Device Using Composite Hard Masks For Formation Of Deep Via Openings
App 20220208556 - TIRUKKONDA; Roshan Jayakhar ; et al. | 2022-06-30 |
Method Of Making A Three-dimensional Memory Device Using Composite Hard Masks For Formation Of Deep Via Openings
App 20220208600 - TIRUKKONDA; Roshan Jayakhar ; et al. | 2022-06-30 |
Method Of Making A Three-dimensional Memory Device Using Composite Hard Masks For Formation Of Deep Via Openings
App 20220208776 - TITUS; Monica ; et al. | 2022-06-30 |
Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same
Grant 11,374,020 - Baraskar , et al. June 28, 2 | 2022-06-28 |
Multibit Ferroelectric Memory Cells And Methods For Forming The Same
App 20220189993 - TIRUKKONDA; Roshan ; et al. | 2022-06-16 |
Bonded Memory Devices And Methods Of Making The Same
App 20220165937 - LILLE; Jeffrey ; et al. | 2022-05-26 |
Ferroelectric Field Effect Transistors Having Enhanced Memory Window And Methods Of Making The Same
App 20220157966 - PRASAD; Bhagwati ; et al. | 2022-05-19 |
Ferroelectric Field Effect Transistors Having Enhanced Memory Window And Methods Of Making The Same
App 20220157852 - PRASAD; Bhagwati ; et al. | 2022-05-19 |
Three-dimensional Memory Device Containing Composite Word Lines Containing Metal And Silicide And Method Of Making Thereof
App 20220139949 - SHARANGPANI; Rahul ; et al. | 2022-05-05 |
Three-dimensional Memory Device Containing Ferroelectric-assisted Memory Elements And Method Of Making The Same
App 20220139960 - SAID; Ramy Nashed Bassely ; et al. | 2022-05-05 |
Three-dimensional memory device including a silicon-germanium source contact layer and method of making the same
Grant 11,322,509 - Baraskar , et al. May 3, 2 | 2022-05-03 |
Three-dimensional Memory Device Including Metal Silicide Source Regions And Methods For Forming The Same
App 20220130853 - Sharangpani; Rahul ; et al. | 2022-04-28 |
Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal-containing conductive elements and method of making thereof
Grant 11,309,332 - Rajashekhar , et al. April 19, 2 | 2022-04-19 |
Stacked die assembly including double-sided inter-die bonding connections and methods of forming the same
Grant 11,309,301 - Zhou , et al. April 19, 2 | 2022-04-19 |
Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same
Grant 11,302,713 - Baraskar , et al. April 12, 2 | 2022-04-12 |
Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same
Grant 11,302,716 - Makala , et al. April 12, 2 | 2022-04-12 |
Three-dimensional memory device including an inter-tier etch stop layer and method of making the same
Grant 11,296,101 - Lee , et al. April 5, 2 | 2022-04-05 |
Semiconductor device containing metal-organic framework inter-line insulator structures and methods of manufacturing the same
Grant 11,296,028 - Said , et al. April 5, 2 | 2022-04-05 |
Three-dimensional Memory Device Including Discrete Charge Storage Elements And Methods Of Forming The Same
App 20220093644 - SHARANGPANI; Rahul ; et al. | 2022-03-24 |
Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same
Grant 11,282,857 - Baraskar , et al. March 22, 2 | 2022-03-22 |
Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same
Grant 11,282,848 - Makala , et al. March 22, 2 | 2022-03-22 |
Semiconductor Device Including Having Metal Organic Framework Interlayer Dielectric Layer Between Metal Lines And Methods Of Forming The Same
App 20220059462 - SAID; Ramy Nashed Bassely ; et al. | 2022-02-24 |
Three-dimensional Memory Device With High Mobility Channels And Nickel Aluminum Silicide Or Germanide Drain Contacts And Method Of Making The Same
App 20220045088 - BARASKAR; Ashish ; et al. | 2022-02-10 |
Fluorine-free Tungsten Deposition Process Employing In-situ Oxidation And Apparatuses For Effecting The Same
App 20220042171 - ZHOU; Fei ; et al. | 2022-02-10 |
Three-dimensional Memory Device With High Mobility Channels And Nickel Aluminum Silicide Or Germanide Drain Contacts And Method Of Making The Same
App 20220045087 - BARASKAR; Ashish ; et al. | 2022-02-10 |
Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the same
Grant 11,244,958 - Cui , et al. February 8, 2 | 2022-02-08 |
Three-dimensional memory device including molybdenum word lines and metal oxide spacers and method of making the same
Grant 11,244,953 - Kanakamedala , et al. February 8, 2 | 2022-02-08 |
Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same
Grant 11,239,254 - Sharangpani , et al. February 1, 2 | 2022-02-01 |
Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same
Grant 11,239,253 - Rajashekhar , et al. February 1, 2 | 2022-02-01 |
Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same
Grant 11,217,532 - Sharangpani , et al. January 4, 2 | 2022-01-04 |
Three-dimensional Memory Device Containing Low Resistance Source-level Contact And Method Of Making Thereof
App 20210408031 - SHARANGPANI; Rahul ; et al. | 2021-12-30 |
Bonded Memory Devices And Methods Of Making The Same
App 20210407943 - RAJASHEKHAR; Adarsh ; et al. | 2021-12-30 |
Bonded Memory Devices And Methods Of Making The Same
App 20210408020 - MAKALA; Raghuveer S. ; et al. | 2021-12-30 |
Three-dimensional Memory Device Including Iii-v Compound Semiconductor Channel Layer And Method Of Making The Same
App 20210408032 - BARASKAR; Ashish Kumar ; et al. | 2021-12-30 |
Bonded Memory Devices And Methods Of Making The Same
App 20210408019 - MAKALA; Raghuveer S. ; et al. | 2021-12-30 |
Three-dimensional Memory Device Including Iii-v Compound Semiconductor Channel Layer And Method Of Making The Same
App 20210408033 - BARASKAR; Ashish Kumar ; et al. | 2021-12-30 |
Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same
Grant 11,201,139 - Sharangpani , et al. December 14, 2 | 2021-12-14 |
Three-dimensional Memory Device Containing Iii-v Compound Semiconductor Channel And Contacts And Method Of Making The Same
App 20210375910 - BARASKAR; Ashish ; et al. | 2021-12-02 |
Three-dimensional Memory Device Containing Iii-v Compound Semiconductor Channel And Contacts And Method Of Making The Same
App 20210375908 - BARASKAR; Ashish ; et al. | 2021-12-02 |
Stacked Die Assembly Including Double-sided Inter-die Bonding Connections And Methods Of Forming The Same
App 20210375848 - ZHOU; Fei ; et al. | 2021-12-02 |
Three-dimensional Memory Device Containing Iii-v Compound Semiconductor Channel And Contacts And Method Of Making The Same
App 20210375909 - BARASKAR; Ashish ; et al. | 2021-12-02 |
Three-dimensional Memory Device Including Ferroelectric-metal-insulator Memory Cells And Methods Of Making The Same
App 20210358952 - Makala; Raghuveer S. ; et al. | 2021-11-18 |
Three-dimensional Memory Device Including Wrap Around Word Lines And Methods Of Forming The Same
App 20210358942 - RAJASHEKHAR; Adarsh ; et al. | 2021-11-18 |
Three-dimensional Memory Device Including Ferroelectric-metal-insulator Memory Cells And Methods Of Making The Same
App 20210358931 - MAKALA; Raghuveer S. ; et al. | 2021-11-18 |
Three-dimensional memory device including wrap around word lines and methods of forming the same
Grant 11,177,280 - Rajashekhar , et al. November 16, 2 | 2021-11-16 |
Bonded assembly containing metal-organic framework bonding dielectric and methods of forming the same
Grant 11,171,097 - Said , et al. November 9, 2 | 2021-11-09 |
Three-dimensional Memory Device Including Discrete Charge Storage Elements And Methods Of Forming The Same
App 20210327897 - KASAI; Yuki ; et al. | 2021-10-21 |
Three-dimensional Memory Device Including Discrete Charge Storage Elements And Methods Of Forming The Same
App 20210327890 - MAKALA; Raghuveer S. ; et al. | 2021-10-21 |
Three-dimensional Memory Device Including Discrete Charge Storage Elements And Methods Of Forming The Same
App 20210327889 - MAKALA; Raghuveer S. ; et al. | 2021-10-21 |
Semiconductor structure containing reentrant shaped bonding pads and methods of forming the same
Grant 11,145,628 - Sharangpani , et al. October 12, 2 | 2021-10-12 |
Bonded assembly containing oxidation barriers and/or adhesion enhancers and methods of forming the same
Grant 11,139,272 - Makala , et al. October 5, 2 | 2021-10-05 |
Three-dimensional Memory Device Including An Inter-tier Etch Stop Layer And Method Of Making The Same
App 20210305266 - Lee; Yao-Sheng ; et al. | 2021-09-30 |
Semiconductor Structure Containing Reentrant Shaped Bonding Pads And Methods Of Forming The Same
App 20210296284 - SHARANGPANI; Rahul ; et al. | 2021-09-23 |
Semiconductor Structure Containing Multilayer Bonding Pads And Methods Of Forming The Same
App 20210296269 - SHARANGPANI; Rahul ; et al. | 2021-09-23 |
Semiconductor Structure Containing Reentrant Shaped Bonding Pads And Methods Of Forming The Same
App 20210296285 - SHARANGPANI; Rahul ; et al. | 2021-09-23 |
Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same
Grant 11,127,728 - Zhou , et al. September 21, 2 | 2021-09-21 |
Ferroelectric tunnel junction memory device with integrated ovonic threshold switches
Grant 11,121,140 - Yang , et al. September 14, 2 | 2021-09-14 |
Warpage-compensated bonded structure including a support chip and a three-dimensional memory chip
Grant 11,114,406 - Kanakamedala , et al. September 7, 2 | 2021-09-07 |
Three-dimensional nor array including vertical word lines and discrete channels and methods of making the same
Grant 11,114,534 - Rajashekhar , et al. September 7, 2 | 2021-09-07 |
Three-dimensional Memory Device Including Discrete Memory Elements And Method Of Making The Same
App 20210265385 - RAJASHEKHAR; Adarsh ; et al. | 2021-08-26 |
Three-dimensional Memory Device Including Molybdenum Word Lines And Metal Oxide Spacers And Method Of Making The Same
App 20210265372 - KANAKAMEDALA; Senaka ; et al. | 2021-08-26 |
Three-dimensional memory device containing plural work function word lines and methods of forming the same
Grant 11,101,288 - Zhang , et al. August 24, 2 | 2021-08-24 |
Three-dimensional Nor Array Including Vertical Word Lines And Discrete Memory Elements And Methods Of Manufacture
App 20210242241 - RAJASHEKHAR; Adarsh ; et al. | 2021-08-05 |
Bonded Assembly Containing Metal-organic Framework Bonding Dielectric And Methods Of Forming The Same
App 20210233881 - SAID; Ramy Nashed Bassely ; et al. | 2021-07-29 |
Three-dimensional memory device containing plural work function word lines and methods of forming the same
Grant 11,063,063 - Zhang , et al. July 13, 2 | 2021-07-13 |
Ferroelectric Tunnel Junction Memory Device With Integrated Ovonic Threshold Switches And Methods Of Making The Same
App 20210210497 - YANG; Seung-Yeul ; et al. | 2021-07-08 |
Three-dimensional Nor Array Including Vertical Word Lines And Discrete Channels And Methods Of Making The Same
App 20210202703 - RAJASHEKHAR; Adarsh ; et al. | 2021-07-01 |
Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same
Grant 11,049,880 - Rajashekhar , et al. June 29, 2 | 2021-06-29 |
Semiconductor Device Containing Metal-organic Framework Inter-line Insulator Structures And Methods Of Manufacturing The Same
App 20210193585 - SAID; Ramy Nashed Bassely ; et al. | 2021-06-24 |
Three-dimensional Memory Device Containing Metal-organic Framework Inter-word Line Insulating Layers And Methods Of Forming The Same
App 20210193674 - SAID; Ramy Nashed Bassely ; et al. | 2021-06-24 |
Three-dimensional Memory Device Containing Plural Work Function Word Lines And Methods Of Forming The Same
App 20210183883 - ZHANG; Yanli ; et al. | 2021-06-17 |
Three-dimensional Memory Device Containing Plural Work Function Word Lines And Methods Of Forming The Same
App 20210183882 - ZHANG; Yanli ; et al. | 2021-06-17 |
Ferroelectric memory devices including a stack of ferroelectric and antiferroelectric layers and method of making the same
Grant 11,024,648 - Sharangpani , et al. June 1, 2 | 2021-06-01 |
Three-dimensional inverse flat NAND memory device containing partially discrete charge storage elements and methods of making the same
Grant 10,998,331 - Zhou , et al. May 4, 2 | 2021-05-04 |
Three-dimensional memory device including liner free molybdenum word lines and methods of making the same
Grant 10,991,721 - Rabkin , et al. April 27, 2 | 2021-04-27 |
Three-dimensional memory device with mobility-enhanced vertical channels and methods of forming the same
Grant 10,985,172 - Ge , et al. April 20, 2 | 2021-04-20 |
Three-dimensional Memory Device Containing Ferroelectric Memory Elements Encapsulated By Transition Metal-containing Conductive Elements And Method Of Making Thereof
App 20210082955 - RAJASHEKHAR; Adarsh ; et al. | 2021-03-18 |
Methods For Reusing Substrates During Manufacture Of A Bonded Assembly Including A Logic Die And A Memory Die
App 20210082865 - BARASKAR; Ashish ; et al. | 2021-03-18 |
Three-dimensional flat NAND memory device having high mobility channels and methods of making the same
Grant 10,950,629 - Makala , et al. March 16, 2 | 2021-03-16 |
Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof
Grant 10,937,809 - Sharangpani , et al. March 2, 2 | 2021-03-02 |
Ferroelectric Memory Devices Including A Stack Of Ferroelectric And Antiferroelectric Layers And Method Of Making The Same
App 20210050372 - SHARANGPANI; Rahul ; et al. | 2021-02-18 |
Three-dimensional Memory Device Containing Ferroelectric Memory Elements Encapsulated By Transition Metal Nitride Materials And Method Of Making Thereof
App 20210050371 - SHARANGPANI; Rahul ; et al. | 2021-02-18 |
Three-dimensional memory device including electrically conductive layers with molybdenum-containing liners
Grant 10,916,504 - Mukae , et al. February 9, 2 | 2021-02-09 |
Three-dimensional Memory Device Containing Epitaxial Ferroelectric Memory Elements And Methods For Forming The Same
App 20210036019 - Sharangpani; Rahul ; et al. | 2021-02-04 |
Three-dimensional Memory Device Containing Epitaxial Ferroelectric Memory Elements And Methods For Forming The Same
App 20210036018 - Rajashekhar; Adarsh ; et al. | 2021-02-04 |
Reusable support substrate for formation and transfer of semiconductor devices and methods of using the same
Grant 10,910,272 - Zhou , et al. February 2, 2 | 2021-02-02 |
Bonded Assembly Containing Oxidation Barriers And/or Adhesion Enhancers And Methods Of Forming The Same
App 20210028149 - MAKALA; Raghuveer S. ; et al. | 2021-01-28 |
Bonded Assembly Containing Oxidation Barriers, Hybrid Bonding, Or Air Gap, And Methods Of Forming The Same
App 20210028136 - SAID; Ramy Nashed Bassely ; et al. | 2021-01-28 |
Bonded Assembly Containing Oxidation Barriers, Hybrid Bonding, Or Air Gap, And Methods Of Forming The Same
App 20210028135 - SAID; Ramy Nashed Bassely ; et al. | 2021-01-28 |
Three-dimensional Memory Device Including Electrically Conductive Layers With Molybdenum-containing Liners
App 20200395310 - MUKAE; Yusuke ; et al. | 2020-12-17 |
Three-dimensional Memory Device Having An Epitaxial Vertical Semiconductor Channel And Method For Making The Same
App 20200395380 - Rajashekhar; Adarsh ; et al. | 2020-12-17 |
Three-dimensional memory device including replacement crystalline channels and methods of making the same
Grant 10,868,025 - Zhou , et al. December 15, 2 | 2020-12-15 |
Three-dimensional Memory Device Including A Silicon-germanium Source Contact Layer And Method Of Making The Same
App 20200388626 - BARASKAR; Ashish ; et al. | 2020-12-10 |
Three-dimensional Memory Device Including A Silicon-germanium Source Contact Layer And Method Of Making The Same
App 20200388688 - BARASKAR; Ashish ; et al. | 2020-12-10 |
Warpage-compensated bonded structure including a support chip and a three-dimensional memory chip
Grant 10,847,408 - Makala , et al. November 24, 2 | 2020-11-24 |
Three-dimensional memory device including liner free molybdenum word lines and methods of making the same
Grant 10,840,259 - Rabkin , et al. November 17, 2 | 2020-11-17 |
Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the same
Grant 10,818,542 - Cui , et al. October 27, 2 | 2020-10-27 |
Three-dimensional Memory Device Having An Epitaxial Vertical Semiconductor Channel And Method For Making The Same
App 20200335487 - RAJASHEKHAR; Adarsh ; et al. | 2020-10-22 |
Three-dimensional Memory Device Having An Epitaxial Vertical Semiconductor Channel And Method For Making The Same
App 20200335516 - RAJASHEKHAR; Adarsh ; et al. | 2020-10-22 |
Ferroelectric memory device containing word lines and pass gates and method of forming the same
Grant 10,811,431 - Makala , et al. October 20, 2 | 2020-10-20 |
Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the same
Grant 10,804,291 - Rajashekhar , et al. October 13, 2 | 2020-10-13 |
Three-dimensional memory devices using carbon-doped aluminum oxide backside blocking dielectric layer for etch resistivity enhancement and methods of making the same
Grant 10,804,282 - Baraskar , et al. October 13, 2 | 2020-10-13 |
Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same
Grant 10,797,061 - Nishida , et al. October 6, 2 | 2020-10-06 |
Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same
Grant 10,797,060 - Sharangpani , et al. October 6, 2 | 2020-10-06 |
Three-dimensional Memory Device Including Composite Word Lines And Multi-strip Select Lines And Method For Making The Same
App 20200312706 - Cui; Zhixin ; et al. | 2020-10-01 |
Three-dimensional Memory Device Including Composite Word Lines And Multi-strip Select Lines And Method For Making The Same
App 20200312875 - Cui; Zhixin ; et al. | 2020-10-01 |
Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same
Grant 10,790,300 - Rajashekhar , et al. September 29, 2 | 2020-09-29 |
Three-dimensional Memory Device Including Liner Free Molybdenum Word Lines And Methods Of Making The Same
App 20200295039 - RABKIN; Peter ; et al. | 2020-09-17 |
Three-dimensional Memory Device With Mobility-enhanced Vertical Channels And Methods Of Forming The Same
App 20200286907 - GE; Chun ; et al. | 2020-09-10 |
Three-dimensional Memory Device Having An Epitaxial Vertical Semiconductor Channel And Method For Making The Same
App 20200279862 - Rajashekhar; Adarsh ; et al. | 2020-09-03 |
Three-dimensional Flat Nand Memory Device Having High Mobility Channels And Methods Of Making The Same
App 20200279868 - Makala; Raghuveer S. ; et al. | 2020-09-03 |
Method of forming seamless drain-select-level electrodes for a three-dimensional memory device and structures formed by the same
Grant 10,756,110 - Sharangpani , et al. A | 2020-08-25 |
Three-dimensional memory device containing channels with laterally pegged dielectric cores
Grant 10,748,925 - Tsutsumi , et al. A | 2020-08-18 |
Three-dimensional Memory Devices Using Carbon-doped Aluminum Oxide Backside Blocking Dielectric Layer For Etch Resistivity Enhan
App 20200258896 - A1 | 2020-08-13 |
Three-dimensional Memory Device Containing Channels With Laterally Pegged Dielectric Cores And Methods For Making The Same
App 20200251486 - Kind Code | 2020-08-06 |
Warpage-compensated Bonded Structure Including A Support Chip And A Three-dimensional Memory Chip
App 20200251443 - Kind Code | 2020-08-06 |
Warpage-compensated Bonded Structure Including A Support Chip And A Three-dimensional Memory Chip
App 20200251374 - Kind Code | 2020-08-06 |
Three-dimensional Semiconductor Chip Containing Memory Die Bonded To Both Sides Of A Support Die And Methods Of Making The Same
App 20200243500 - Zhou; Fei ; et al. | 2020-07-30 |
Three-dimensional Memory Device With Mobility-enhanced Vertical Channels And Methods Of Forming The Same
App 20200235116 - GE; Chun ; et al. | 2020-07-23 |
Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the same
Grant 10,707,233 - Cui , et al. | 2020-07-07 |
Three-dimensional flat NAND memory device having high mobility channels and methods of making the same
Grant 10,700,086 - Makala , et al. | 2020-06-30 |
Three-dimensional Memory Device Having Stressed Vertical Semiconductor Channels And Method Of Making The Same
App 20200194445 - SHARANGPANI; Rahul ; et al. | 2020-06-18 |
Three-dimensional Memory Device Having Stressed Vertical Semiconductor Channels And Method Of Making The Same
App 20200194446 - NISHIDA; Akio ; et al. | 2020-06-18 |
Three-dimensional Memory Device Including Replacement Crystalline Channels And Methods Of Making The Same
App 20200168619 - ZHOU; Fei ; et al. | 2020-05-28 |
Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same
Grant 10,665,581 - Zhou , et al. | 2020-05-26 |
Three-dimensional Multilevel Device Containing Seamless Unidirectional Metal Layer Fill And Method Of Making Same
App 20200152655 - SHARANGPANI; Rahul ; et al. | 2020-05-14 |
Three-dimensional multilevel device containing seamless unidirectional metal layer fill and method of making same
Grant 10,651,196 - Sharangpani , et al. | 2020-05-12 |
Three-dimensional memory device with semicircular metal-semiconductor alloy floating gate electrodes and methods of making thereof
Grant 10,622,368 - Kanakamedala , et al. | 2020-04-14 |
Three-dimensional memory device including contact via structures that extend through word lines and method of making the same
Grant 10,622,369 - Zhou , et al. | 2020-04-14 |
Three-dimensional memory device containing compositionally graded word line diffusion barrier layer for and methods of forming the same
Grant 10,615,123 - Hinoue , et al. | 2020-04-07 |
Three-dimensional Memory Device Containing Word Lines Formed By Selective Tungsten Growth On Nucleation Controlling Surfaces And
App 20200105595 - SHARANGPANI; Rahul ; et al. | 2020-04-02 |
Three-dimensional Memory Device Including Liner Free Molybdenum Word Lines And Methods Of Making The Same
App 20200051993 - RABKIN; Peter ; et al. | 2020-02-13 |
Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same
Grant 10,529,620 - Sharangpani , et al. J | 2020-01-07 |
Three-dimensional Flat Nand Memory Device Having High Mobility Channels And Methods Of Making The Same
App 20200006376 - Makala; Raghuveer S. ; et al. | 2020-01-02 |
Three-dimensional Inverse Flat Nand Memory Device Containing Partially Discrete Charge Storage Elements And Methods Of Making Th
App 20200006375 - Zhou; Fei ; et al. | 2020-01-02 |
Three-dimensional Memory Device With Semicircular Metal-semiconductor Alloy Floating Gate Electrodes And Methods Of Making There
App 20190371803 - Kanakamedala; Senaka ; et al. | 2019-12-05 |
Damascene process for forming three-dimensional cross rail phase change memory devices
Grant 10,468,596 - Makala , et al. No | 2019-11-05 |
Three-dimensional memory device with thickened word lines in terrace region and method of making thereof
Grant 10,461,163 - Kanakamedala , et al. Oc | 2019-10-29 |
Three-dimensional memory device with thickened word lines in terrace region
Grant 10,453,854 - Kanno , et al. Oc | 2019-10-22 |
Three-dimensional memory device having direct source contact and metal oxide blocking dielectric and method of making thereof
Grant 10,438,964 - Makala , et al. O | 2019-10-08 |
Three-dimensional Memory Device Containing Compositionally Graded Word Line Diffusion Barrier Layer For And Methods Of Forming T
App 20190287916 - SHARANGPANI; Rahul ; et al. | 2019-09-19 |
Three-dimensional Memory Device Containing Compositionally Graded Word Line Diffusion Barrier Layer For And Methods Of Forming T
App 20190287982 - HINOUE; Tatsuya ; et al. | 2019-09-19 |
Damascene Process For Forming Three-dimensional Cross Rail Phase Change Memory Devices
App 20190259946 - Makala; Raghuveer S. ; et al. | 2019-08-22 |
Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same
Grant 10,381,559 - Zhou , et al. A | 2019-08-13 |
Three-dimensional memory device including vertically offset drain select level layers and method of making thereof
Grant 10,381,364 - Zhou , et al. A | 2019-08-13 |
Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same
Grant 10,381,409 - Zhou , et al. A | 2019-08-13 |
Three-dimensional Memory Device Including Contact Via Structures That Extend Through Word Lines And Method Of Making The Same
App 20190229125 - Zhou; Fei ; et al. | 2019-07-25 |
Three dimensional memory device containing multilayer wordline barrier films and method of making thereof
Grant 10,361,213 - Sharangpani , et al. | 2019-07-23 |
Three-dimensional memory device with amorphous barrier layer and method of making thereof
Grant 10,355,139 - Sharangpani , et al. July 16, 2 | 2019-07-16 |
Multi-tier three-dimensional memory device with stress compensation structures and method of making thereof
Grant 10,355,012 - Shimabukuro , et al. July 16, 2 | 2019-07-16 |
Three-dimensional Memory Device With Thickened Word Lines In Terrace Region And Method Of Making Thereof
App 20190148392 - KANNO; Yoshihiro ; et al. | 2019-05-16 |
Three-dimensional Memory Device With Thickened Word Lines In Terrace Region And Method Of Making Thereof
App 20190148506 - KANAKAMEDALA; Senaka Krishna ; et al. | 2019-05-16 |
Three-dimensional memory device containing air gap rails and method of making thereof
Grant 10,290,648 - Zhou , et al. | 2019-05-14 |
Three-dimensional memory device with graded word lines and methods of making the same
Grant 10,290,652 - Sharangpani , et al. | 2019-05-14 |
Three-dimensional Memory Device With Annular Blocking Dielectrics And Method Of Making Thereof
App 20190139973 - Zhou; Fei ; et al. | 2019-05-09 |
Three-dimensional memory device with annular blocking dielectrics and method of making thereof
Grant 10,283,513 - Zhou , et al. | 2019-05-07 |
Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereof
Grant 10,276,583 - Sharangpani , et al. | 2019-04-30 |
Three-dimensional array device having a metal containing barrier and method of making thereof
Grant 10,262,945 - Makala , et al. | 2019-04-16 |
Three-dimensional memory device with silicided word lines, air gap layers and discrete charge storage elements, and method of making thereof
Grant 10,256,247 - Kanakamedala , et al. | 2019-04-09 |
Three dimensional NAND memory device with common bit line for multiple NAND strings in each memory block
Grant 10,224,104 - Chowdhury , et al. | 2019-03-05 |
Three-dimensional memory device having L-shaped word lines and a support structure and methods of making the same
Grant 10,217,746 - Kim , et al. Feb | 2019-02-26 |
Three-dimensional cross rail phase change memory device and method of manufacturing the same
Grant 10,199,434 - Lee , et al. Fe | 2019-02-05 |
Three-dimensional Memory Device Having Direct Source Contact And Metal Oxide Blocking Dielectric And Method Of Making Thereof
App 20180374866 - MAKALA; Raghuveer S. ; et al. | 2018-12-27 |
Multi-tier Three-dimensional Memory Device With Stress Compensation Structures And Method Of Making Thereof
App 20180374865 - SHIMABUKURO; Seiji ; et al. | 2018-12-27 |
Three-dimensional Memory Device Including Vertically Offset Drain Select Level Layers And Method Of Making Thereof
App 20180366482 - Zhou; Fei ; et al. | 2018-12-20 |
Cobalt-containing conductive layers for control gate electrodes in a memory structure
Grant 10,128,261 - Makala , et al. November 13, 2 | 2018-11-13 |
Three-dimensional memory device containing structurally reinforced pedestal channel portions and method of making thereof
Grant 10,115,730 - Baraskar , et al. October 30, 2 | 2018-10-30 |
Method of making a three-dimensional memory device using a multi-step hot phosphoric acid wet etch process
Grant 10,103,169 - Ge , et al. October 16, 2 | 2018-10-16 |
Three-dimensional memory device having select gate electrode that is thicker than word lines and method of making thereof
Grant 10,083,982 - Shigemura , et al. September 25, 2 | 2018-09-25 |
Three-dimensional memory device having drain select level isolation structure and method of making thereof
Grant 10,050,054 - Zhang , et al. August 14, 2 | 2018-08-14 |
Non-volatile Memory With Reduced Variations In Gate Resistance
App 20180175054 - Baraskar; Ashish ; et al. | 2018-06-21 |
Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof
Grant 9,991,277 - Tsutsumi , et al. June 5, 2 | 2018-06-05 |
Three-dimensional Memory Device With Discrete Self-aligned Charge Storage Elements And Method Of Making Thereof
App 20180151588 - Tsutsumi; Masanori ; et al. | 2018-05-31 |
Three-dimensional Array Device Having A Metal Containing Barrier And Method Of Making Thereof
App 20180151497 - MAKALA; Raghuveer S. ; et al. | 2018-05-31 |
Cobalt-containing conductive layers for control gate electrodes in a memory structure
Grant 9,984,963 - Peri , et al. May 29, 2 | 2018-05-29 |
Three-dimensional Memory Device Having A Multilevel Drain Select Gate Electrode And Method Of Making Thereof
App 20180138193 - Zhang; Yanli ; et al. | 2018-05-17 |
Three-dimensional Memory Device Having Select Gate Electrode That Is Thicker Than Word Lines And Method Of Making Thereof
App 20180138194 - SHIGEMURA; Keisuke ; et al. | 2018-05-17 |
Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereof
Grant 9,972,641 - Zhang , et al. May 15, 2 | 2018-05-15 |
Three-dimensional Memory Device Having Drain Select Level Isolation Structure And Method Of Making Thereof
App 20180097009 - ZHANG; Yanli ; et al. | 2018-04-05 |
Three-dimensional Memory Device Containing Word Lines Formed By Selective Tungsten Growth On Nucleation Controlling Surfaces And Methods Of Manufacturing The Same
App 20180090373 - Sharangpani; Rahul ; et al. | 2018-03-29 |
Ridged word lines for increasing control gate lengths in a three-dimensional memory device
Grant 9,893,081 - Kanakamedala , et al. February 13, 2 | 2018-02-13 |
Three-dimensional Memory Device With Semicircular Metal-semiconductor Alloy Floating Gate Electrodes And Methods Of Making Thereof
App 20180040623 - Kanakamedala; Senaka ; et al. | 2018-02-08 |
Ridged Word Lines For Increasing Control Gate Lengths In A Three-dimensional Memory Device
App 20180040627 - Kanakamedala; Senaka ; et al. | 2018-02-08 |
Three dimensional NAND device having dummy memory holes and method of making thereof
Grant 9,887,207 - Zhang , et al. February 6, 2 | 2018-02-06 |
Three-dimensional Memory Device Containing Composite Word Lines Including A Metal Silicide And An Elemental Metal And Method Of Making Thereof
App 20180033646 - SHARANGPANI; Rahul ; et al. | 2018-02-01 |
Non-volatile Memory With Reduced Variations In Gate Resistance
App 20180033798 - Baraskar; Ashish ; et al. | 2018-02-01 |
Three-dimensional memory device with annular blocking dielectrics and discrete charge storage elements and method of making thereof
Grant 9,875,929 - Shukla , et al. January 23, 2 | 2018-01-23 |
Three-dimensional Memory Device With Amorphous Barrier Layer And Method Of Making Thereof
App 20170373197 - Sharangpani; Rahul ; et al. | 2017-12-28 |
Three Dimensional Memory Device Containing Multilayer Wordline Barrier Films And Method Of Making Thereof
App 20170373079 - SHARANGPANI; Rahul ; et al. | 2017-12-28 |
Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices
Grant 9,842,857 - Sharangpani , et al. December 12, 2 | 2017-12-12 |
Memory device containing cobalt silicide control gate electrodes and method of making thereof
Grant 9,842,907 - Makala , et al. December 12, 2 | 2017-12-12 |
Three-dimensional memory device containing a lateral source contact and method of making the same
Grant 9,824,966 - Kanakamedala , et al. November 21, 2 | 2017-11-21 |
Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereof
Grant 9,812,463 - Sharangpani , et al. November 7, 2 | 2017-11-07 |
Vertical floating gate NAND with selectively deposited ALD metal films
Grant 9,806,090 - Sharangpani , et al. October 31, 2 | 2017-10-31 |
Method of making self-assembling floating gate electrodes for a three-dimensional memory device
Grant 9,806,089 - Sharangpani , et al. October 31, 2 | 2017-10-31 |
Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word lines
Grant 9,793,139 - Sharangpani , et al. October 17, 2 | 2017-10-17 |
Cobalt-containing Conductive Layers For Control Gate Electrodes In A Memory Structure
App 20170287925 - MAKALA; Raghuveer S. ; et al. | 2017-10-05 |
Molybdenum-containing conductive layers for control gate electrodes in a memory structure
Grant 9,780,182 - Peri , et al. October 3, 2 | 2017-10-03 |
Three Dimensional Nand Memory Device With Common Bit Line For Multiple Nand Strings In Each Memory Block
App 20170278571 - Chowdhury; Murshed ; et al. | 2017-09-28 |
Three-dimensional Memory Device Containing Vertically Isolated Charge Storage Regions And Method Of Making Thereof
App 20170278859 - SHARANGPANI; Rahul ; et al. | 2017-09-28 |
Method of selectively depositing floating gate material in a memory device
Grant 9,768,270 - Gunji-Yoneoka , et al. September 19, 2 | 2017-09-19 |
Three-dimensional memory devices having a shaped epitaxial channel portion and method of making thereof
Grant 9,754,958 - Pachamuthu , et al. September 5, 2 | 2017-09-05 |
Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing pad
Grant 9,698,153 - Liu , et al. July 4, 2 | 2017-07-04 |
Memory device containing stress-tunable control gate electrodes
Grant 9,698,223 - Sharangpani , et al. July 4, 2 | 2017-07-04 |
Three-dimensional memory structure with multi-component contact via structure and method of making thereof
Grant 9,698,152 - Peri , et al. July 4, 2 | 2017-07-04 |
Monolithic three dimensional NAND strings and methods of fabrication thereof
Grant 9,691,884 - Makala , et al. June 27, 2 | 2017-06-27 |
Three-dimensional memory devices containing memory block bridges
Grant 9,679,906 - Lu , et al. June 13, 2 | 2017-06-13 |
Differential Etch Of Metal Oxide Blocking Dielectric Layer For Three-dimensional Memory Devices
App 20170162597 - Sharangpani; Rahul ; et al. | 2017-06-08 |
Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structure
Grant 9,659,955 - Sharangpani , et al. May 23, 2 | 2017-05-23 |
NAND memory strings and methods of fabrication thereof
Grant 9,646,990 - Koka , et al. May 9, 2 | 2017-05-09 |
Lateral stack of cobalt and a cobalt-semiconductor alloy for control gate electrodes in a memory structure
Grant 9,646,975 - Peri , et al. May 9, 2 | 2017-05-09 |
Three-dimensional Memory Devices Having A Shaped Epitaxial Channel Portion And Method Of Making Thereof
App 20170125437 - Pachamuthu; Jayavel ; et al. | 2017-05-04 |
Crystalinity-dependent Aluminum Oxide Etching For Self-aligned Blocking Dielectric In A Memory Structure
App 20170125436 - SHARANGPANI; Rahul ; et al. | 2017-05-04 |
Robust Nucleation Layers For Enhanced Fluorine Protection And Stress Reduction In 3d Nand Word Lines
App 20170125538 - SHARANGPANI; Rahul ; et al. | 2017-05-04 |
Three-dimensional memory device with metal and silicide control gates
Grant 9,627,399 - Kanakamedala , et al. April 18, 2 | 2017-04-18 |
Enhanced channel mobility three-dimensional memory structure and method of making thereof
Grant 9,627,395 - Zhang , et al. April 18, 2 | 2017-04-18 |
Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices
Grant 9,613,977 - Sharangpani , et al. April 4, 2 | 2017-04-04 |
Memory Device Containing Cobalt Silicide Control Gate Electrodes And Method Of Making Thereof
App 20170092733 - MAKALA; Raghuveer S. ; et al. | 2017-03-30 |
Method Of Making Self-assembling Floating Gate Electrodes For A Three-diemnsional Memory Device
App 20170084623 - SHARANGPANI; Rahul ; et al. | 2017-03-23 |
Lateral Stack Of Cobalt And A Cobalt-semiconductor Alloy For Control Gate Electrodes In A Memory Structure
App 20170084618 - PERI; Somesh ; et al. | 2017-03-23 |
Monolithic three-dimensional NAND strings and methods of fabrication thereof
Grant 9,576,975 - Zhang , et al. February 21, 2 | 2017-02-21 |
Cobalt-containing conductive layers for control gate electrodes in a memory structure
Grant 9,576,966 - Peri , et al. February 21, 2 | 2017-02-21 |
Three-dimensional Memory Devices Containing Memory Block Bridges
App 20170047334 - Lu; Zhenyu ; et al. | 2017-02-16 |
Multilevel memory stack structure with joint electrode having a collar portion and methods for manufacturing the same
Grant 9,570,463 - Zhang , et al. February 14, 2 | 2017-02-14 |
Spacer passivation for high-aspect ratio opening film removal and cleaning
Grant 9,570,460 - Kanakamedala , et al. February 14, 2 | 2017-02-14 |
Metal word lines for three dimensional memory devices
Grant 9,570,455 - Sharangpani , et al. February 14, 2 | 2017-02-14 |
Three-dimensional Memory Device With Metal And Silicide Control Gates
App 20170025431 - KANAKAMEDALA; Senaka ; et al. | 2017-01-26 |
Differential Etch Of Metal Oxide Blocking Dielectric Layer For Three-dimensional Memory Devices
App 20160379989 - SHARANGPANI; Rahul ; et al. | 2016-12-29 |
Three-dimensional memory devices having a single layer channel and methods of making thereof
Grant 9,530,785 - Koka , et al. December 27, 2 | 2016-12-27 |
Metal-semiconductor alloy region for enhancing on current in a three-dimensional memory structure
Grant 9,524,977 - Sharangpani , et al. December 20, 2 | 2016-12-20 |
Method of making a vertical NAND device using sequential etching of multilayer stacks
Grant 9,520,406 - Makala , et al. December 13, 2 | 2016-12-13 |
Three dimensional memory device with blocking dielectric having enhanced protection against fluorine attack
Grant 9,515,079 - Koka , et al. December 6, 2 | 2016-12-06 |
Cobalt-containing Conductive Layers For Control Gate Electrodes In A Memory Structure
App 20160351497 - Peri; Somesh ; et al. | 2016-12-01 |
Three-dimensional non-volatile memory device
Grant 9,496,274 - Pachamuthu , et al. November 15, 2 | 2016-11-15 |
Ruthenium nucleation layer for control gate electrodes in a memory structure
Grant 9,496,419 - Sharangpani , et al. November 15, 2 | 2016-11-15 |
Selective blocking dielectric formation in a three-dimensional memory structure
Grant 9,484,357 - Makala , et al. November 1, 2 | 2016-11-01 |
Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layer
Grant 9,478,558 - Koka , et al. October 25, 2 | 2016-10-25 |
Metal-semiconductor Alloy Region For Enhancing On Current In A Three-dimensional Memory Structure
App 20160307908 - SHARANGPANI; Rahul ; et al. | 2016-10-20 |
Vertical Floating Gate Nand With Selectively Deposited Ald Metal Films
App 20160293617 - SHARANGPANI; Rahul ; et al. | 2016-10-06 |
High aspect ratio memory hole channel contact formation
Grant 9,460,931 - Pachamuthu , et al. October 4, 2 | 2016-10-04 |
Nand Memory Strings And Methods Of Fabrication Thereof
App 20160284730 - KOKA; Sateesh ; et al. | 2016-09-29 |
Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks
Grant 9,449,982 - Lu , et al. September 20, 2 | 2016-09-20 |
Method of making a three-dimensional memory array with etch stop
Grant 9,437,606 - Makala , et al. September 6, 2 | 2016-09-06 |
Enhanced Channel Mobility Three-dimensional Memory Structure And Method Of Making Thereof
App 20160233227 - ZHANG; Yanli ; et al. | 2016-08-11 |
Molybdenum-containing Conductive Layers For Control Gate Electrodes In A Memory Structure
App 20160225866 - Peri; Somesh ; et al. | 2016-08-04 |
Semiconductor Structure With Concave Blocking Dielectric Sidewall And Method Of Making Thereof By Isotropically Etching The Blocking Dielectric Layer
App 20160211272 - Koka; Sateesh ; et al. | 2016-07-21 |
Select gate transistor with single crystal silicon for three-dimensional memory
Grant 9,397,111 - Chowdhury , et al. July 19, 2 | 2016-07-19 |
Three dimensional NAND device with semiconductor, metal or silicide floating gates and method of making thereof
Grant 9,397,093 - Makala , et al. July 19, 2 | 2016-07-19 |
Fluorine-free word lines for three-dimensional memory devices
Grant 9,397,046 - Sharangpani , et al. July 19, 2 | 2016-07-19 |
Methods of making three dimensional NAND devices
Grant 9,397,107 - Makala , et al. July 19, 2 | 2016-07-19 |
Vertical Nand And Method Of Making Thereof Using Sequential Stack Etching And Self-aligned Landing Pad
App 20160204117 - Liu; Jin ; et al. | 2016-07-14 |
Vertical floating gate NAND with selectively deposited ALD metal films
Grant 9,379,124 - Sharangpani , et al. June 28, 2 | 2016-06-28 |
NAND memory strings and methods of fabrication thereof
Grant 9,379,132 - Koka , et al. June 28, 2 | 2016-06-28 |
Selective Blocking Dielectric Formation In A Three-dimensional Memory Structure
App 20160172370 - MAKALA; Raghuveer S. ; et al. | 2016-06-16 |
Three Dimensional Memory Device With Blocking Dielectric Having Enhanced Protection Against Fluorine Attack
App 20160172366 - KOKA; Sateesh ; et al. | 2016-06-16 |
Three dimensional NAND string memory devices with voids enclosed between control gate electrodes
Grant 9,356,031 - Lee , et al. May 31, 2 | 2016-05-31 |
Metal Word Lines For Three Dimensional Memory Devices
App 20160148945 - SHARANGPANI; Rahul ; et al. | 2016-05-26 |
Memory Device Containing Stress-tunable Control Gate Electrodes
App 20160149002 - Sharangpani; Rahul ; et al. | 2016-05-26 |
Ruthenium Nucleation Layer For Control Gate Electrodes In A Memory Structure
App 20160149049 - SHARANGPANI; Rahul ; et al. | 2016-05-26 |
Three-dimensional Memory Structure With Multi-component Contact Via Structure And Method Of Making Thereof
App 20160141294 - Peri; Somesh ; et al. | 2016-05-19 |
Compact three dimensional vertical NAND and method of making thereof
Grant 9,331,090 - Alsmeier , et al. May 3, 2 | 2016-05-03 |
Nand Memory Strings And Methods Of Fabrication Thereof
App 20160118397 - KOKA; Sateesh ; et al. | 2016-04-28 |
Method of making a three dimensional NAND device
Grant 9,305,849 - Tsutsumi , et al. April 5, 2 | 2016-04-05 |
Methods of making three dimensional NAND devices
Grant 9,305,932 - Kanakamedala , et al. April 5, 2 | 2016-04-05 |
Monolithic Three-dimensional Nand Strings And Methods Of Fabrication Thereof
App 20160086972 - ZHANG; Yanli ; et al. | 2016-03-24 |
Monolithic Three Dimensional Nand Strings And Methods Of Fabrication Thereof
App 20160064532 - MAKALA; Raghuveer S. ; et al. | 2016-03-03 |
Three Dimensional Nand Device Having Dummy Memory Holes And Method Of Making Thereof
App 20160049421 - ZHANG; Yanli ; et al. | 2016-02-18 |
Three Dimensional Nand String Memory Devices And Methods Of Fabrication Thereof
App 20160043093 - Lee; Yao-Sheng ; et al. | 2016-02-11 |
Spacer Passivation For High-aspect Ratio Opening Film Removal And Cleaning
App 20160035742 - KANAKAMEDALA; Senaka Krishna ; et al. | 2016-02-04 |
Three dimensional NAND device and method of making thereof
Grant 9,236,396 - Koka , et al. January 12, 2 | 2016-01-12 |
Methods of fabricating a three-dimensional non-volatile memory device
Grant 9,230,973 - Pachamuthu , et al. January 5, 2 | 2016-01-05 |
Metal word lines for three dimensional memory devices
Grant 9,230,983 - Sharangpani , et al. January 5, 2 | 2016-01-05 |
Method Of Selectively Depositing Floating Gate Material In A Memory Device
App 20150380419 - GUNJI-YONEOKA; Marika ; et al. | 2015-12-31 |
Methods Of Making Three Dimensional Nand Devices
App 20150380423 - Kanakamedala; Senaka Krishna ; et al. | 2015-12-31 |
Vertical Floating Gate NAND with Selectively Deposited ALD Metal Films
App 20150380422 - Sharangpani; Rahul ; et al. | 2015-12-31 |
Methods Of Making Three Dimensional Nand Devices
App 20150380424 - Makala; Raghuveer S. ; et al. | 2015-12-31 |
Method Of Making A Vertical Nand Device Using A Sacrificial Layer With Air Gap And Sequential Etching Of Multilayer Stacks
App 20150294978 - LU; Zhenyu ; et al. | 2015-10-15 |
Floating gate ultrahigh density vertical NAND flash memory
Grant 9,159,739 - Makala , et al. October 13, 2 | 2015-10-13 |
Method of forming an active area with floating gate negative offset profile in FG NAND memory
Grant 9,099,496 - Tian , et al. August 4, 2 | 2015-08-04 |
Spacer passivation for high aspect ratio etching of multilayer stacks for three dimensional NAND device
Grant 9,093,480 - Makala , et al. July 28, 2 | 2015-07-28 |
Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device
Grant 9,093,321 - Makala , et al. July 28, 2 | 2015-07-28 |
Cobalt-containing Conductive Layers For Control Gate Electrodes In A Memory Structure
App 20150179662 - MAKALA; Raghuveer S. ; et al. | 2015-06-25 |
High aspect ratio memory hole channel contact formation
Grant 9,023,719 - Pachamuthu , et al. May 5, 2 | 2015-05-05 |
Method Of Making A Vertical Nand Device Using Sequential Etching Of Multilayer Stacks
App 20150118811 - Makala; Raghuveer S. ; et al. | 2015-04-30 |
Trap passivation in memory cell with metal oxide switching element
Grant 8,987,046 - Sekar , et al. March 24, 2 | 2015-03-24 |
Methods of fabricating a three-dimensional non-volatile memory device
Grant 8,987,089 - Pachamuthu , et al. March 24, 2 | 2015-03-24 |
Three-dimensional Non-volatile Memory Device
App 20150076585 - Pachamuthu; Jayavel ; et al. | 2015-03-19 |
High Aspect Ratio Memory Hole Channel Contact Formation
App 20150079765 - Pachamuthu; Jayavel ; et al. | 2015-03-19 |
Methods Of Fabricating A Three-dimensional Non-volatile Memory Device
App 20150079742 - Pachamuthu; Jayavel ; et al. | 2015-03-19 |
Methods Of Fabricating A Three-dimensional Non-volatile Memory Device
App 20150079743 - Pachamuthu; Jayavel ; et al. | 2015-03-19 |
High Aspect Ratio Memory Hole Channel Contact Formation
App 20150076584 - Pachamuthu; Jayavel ; et al. | 2015-03-19 |
Three Dimensional Nand Device And Method Of Charge Trap Layer Separation And Floating Gate Formation In The Nand Device
App 20150069494 - Makala; Raghuveer S. ; et al. | 2015-03-12 |
Compact Three Dimensional Vertical Nand And Method Of Making Thereof
App 20150037950 - Alsmeier; Johann ; et al. | 2015-02-05 |
Method of making a vertical NAND device using sequential etching of multilayer stacks
Grant 8,946,023 - Makala , et al. February 3, 2 | 2015-02-03 |
Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device
Grant 8,933,501 - Makala , et al. January 13, 2 | 2015-01-13 |
Method Of Making A Three-Dimensional Memory Array With Etch Stop
App 20150008503 - MAKALA; Raghuveer S. ; et al. | 2015-01-08 |
Method Of Forming An Active Area With Floating Gate Negative Offset Profile In Fg Nand Memory
App 20140367762 - Tian; Ming ; et al. | 2014-12-18 |
Floating Gate Ultrahigh Density Vertical Nand Flash Memory And Method Of Making Thereof
App 20140353738 - Makala; Raghuveer S. ; et al. | 2014-12-04 |
Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
Grant 8,878,235 - Schricker , et al. November 4, 2 | 2014-11-04 |
Compact three dimensional vertical NAND and method of making thereof
Grant 8,878,278 - Alsmeier , et al. November 4, 2 | 2014-11-04 |
Spacer Passivation For High Aspect Ratio Etching Of Multilayer Stacks For Three Dimensional Nand Device
App 20140295636 - Makala; Raghuveer S. ; et al. | 2014-10-02 |
Method Of Making A Vertical Nand Device Using Sequential Etching Of Multilayer Stacks
App 20140273373 - MAKALA; Raghuveer S. ; et al. | 2014-09-18 |
Three Dimensional Nand Device With Semiconductor, Metal Or Silicide Floating Gates And Method Of Making Thereof
App 20140225181 - Makala; Raghuveer S. ; et al. | 2014-08-14 |
Bottom electrodes for use with metal oxide resistivity switching layers
Grant 8,772,749 - Sekar , et al. July 8, 2 | 2014-07-08 |
Electrical current-induced structural changes and chemical functionalization of carbon nanotubes
Grant 8,758,717 - Ganapathiraman , et al. June 24, 2 | 2014-06-24 |
Memory cell with resistance-switching layers
Grant 8,737,111 - Kreupl , et al. May 27, 2 | 2014-05-27 |
Three Dimensional Nand Device And Method Of Charge Trap Layer Separation And Floating Gate Formation In The Nand Device
App 20140138760 - Makala; Raghuveer S. ; et al. | 2014-05-22 |
Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device
Grant 8,658,499 - Makala , et al. February 25, 2 | 2014-02-25 |
Three Dimensional NAND Device and Method of Charge Trap Layer Separation and Floating Gate Formation in the NAND Device
App 20140008714 - Makala; Raghuveer S. ; et al. | 2014-01-09 |
Compact Three Dimensional Vertical Nand And Method Of Making Thereof
App 20130248974 - ALSMEIER; Johann ; et al. | 2013-09-26 |
Non-volatile Storage With Metal Oxide Switching Element And Methods For Fabricating The Same
App 20130234099 - Sekar; Deepak C. ; et al. | 2013-09-12 |
Trap Passivation In Memory Cell With Metal Oxide Switching Element
App 20130221311 - Sekar; Deepak C. ; et al. | 2013-08-29 |
Composition of memory cell with resistance-switching layers
Grant 8,520,424 - Kreupl , et al. August 27, 2 | 2013-08-27 |
Bottom Electrodes For Use With Metal Oxide Resistivity Switching Layers
App 20130126821 - Sekar; Deepak Chandra ; et al. | 2013-05-23 |
Memory cell that includes a carbon-based memory element and methods of forming the same
Grant 8,436,447 - Kalra , et al. May 7, 2 | 2013-05-07 |
Bottom electrodes for use with metal oxide resistivity switching layers
Grant 8,354,660 - Sekar , et al. January 15, 2 | 2013-01-15 |
Three dimensional horizontal diode non-volatile memory array and method of making thereof
Grant 8,187,932 - Nguyen , et al. May 29, 2 | 2012-05-29 |
Three Dimensional Horizontal Diode Non-Volatile Memory Array and Method of Making Thereof
App 20120091413 - Nguyen; Natalie ; et al. | 2012-04-19 |
Method of making damascene diodes using selective etching methods
Grant 8,148,230 - Dunton , et al. April 3, 2 | 2012-04-03 |
Memory Cell That Employs A Selectively Fabricated Carbon Nano-tube Reversible Resistance-switching Element And Methods Of Forming The Same
App 20120001150 - Schricker; April D. ; et al. | 2012-01-05 |
Memory Cell With Resistance-Switching Layers
App 20110310653 - Kreupl; Franz ; et al. | 2011-12-22 |
Composition Of Memory Cell With Resistance-Switching Layers
App 20110310655 - Kreupl; Franz ; et al. | 2011-12-22 |
Memory Cell That Includes A Carbon-based Memory Element And Methods Of Forming The Same
App 20110260290 - Kalra; Pankaj ; et al. | 2011-10-27 |
Bottom Electrodes For Use With Metal Oxide Resistivity Switching Layers
App 20110227028 - Sekar; Deepak Chandra ; et al. | 2011-09-22 |
Bottom Electrodes For Use With Metal Oxide Resistivity Switching Layers
App 20110227020 - Sekar; Deepak Chandra ; et al. | 2011-09-22 |
Method of making damascene diodes using sacrificial material
Grant 7,927,977 - Makala , et al. April 19, 2 | 2011-04-19 |
Method of making damascene diodes using selective etching methods
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