Lu; Jiong-Ping

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lu; Jiong-Ping.The latest application filed is for "method for improving the thermal stability of silicide".

Company Profile

0.62.69

Lu; Jiong-Ping - Richardson TX
Lu; Jiong-Ping - Overijse N/A BE
Lu; Jiong-Ping - Dallas TX

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Low stress sacrificial cap layer Grant 9,048,180 - Lu , et al. June 2, 2	2015-06-02
Formation of a selective carbon-doped epitaxial cap layer on selective epitaxial SiGe Grant 8,835,263 - Weijtmans , et al. September 16, 2	2014-09-16
Nickel silicide formation for semiconductor components Grant 8,546,259 - DeLoach , et al. October 1, 2	2013-10-01
Method of forming capacitors Grant 8,088,659 - Lu , et al. January 3, 2	2012-01-03
Capacitor formed on a recrystallized polysilicon layer Grant 8,053,296 - Lu , et al. November 8, 2	2011-11-08
Low stress sacrificial cap layer Grant 7,994,073 - Lu , et al. August 9, 2	2011-08-09
Method for Improving the Thermal Stability of Silicide App 20110151637 - Lu; Jiong-Ping ; et al.	2011-06-23
FUSI integration method using SOG as a sacrificial planarization layer Grant 7,943,499 - Lu , et al. May 17, 2	2011-05-17
Method For Improving The Thermal Stability Of Silicide App 20100317170 - Lu; Jiong-Ping ; et al.	2010-12-16
Novel High-k Dielectric Materials And Processes For Manufacturing Them App 20100227450 - Lu; Jiong-Ping ; et al.	2010-09-09
Capacitor Formed On A Recrystallized Polysilicon Layer App 20100159665 - Lu; Jiong-Ping ; et al.	2010-06-24
High-K dielectric materials and processes for manufacturing them Grant 7,732,852 - Lu , et al. June 8, 2	2010-06-08
FUSI integration method using SOG as a sacrificial planarization layer Grant 7,732,313 - Lu , et al. June 8, 2	2010-06-08
FUSI integration method using SOG as a sacrificial planarization layer Grant 7,732,312 - Lu , et al. June 8, 2	2010-06-08
Method for improving the thermal stability of silicide Grant 7,666,729 - Lu , et al. February 23, 2	2010-02-23
FUSI Integration Method Using SOG as a Sacrificial Planarization Layer App 20100041231 - Lu; Jiong-Ping ; et al.	2010-02-18
In-situ co-deposition of Si in diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability Grant 7,655,555 - Faust , et al. February 2, 2	2010-02-02
Method of forming a fully silicided semiconductor device with independent gate and source/drain doping and related device Grant 7,585,738 - Yu , et al. September 8, 2	2009-09-08
High-k dielectric materials and processes for manufacturing them Grant 7,544,987 - Lu , et al. June 9, 2	2009-06-09
Fusi Integration Method Using Sog As A Sacrificial Planarization Layer App 20090111224 - Lu; Jiong-Ping ; et al.	2009-04-30
Nickel Silicide Formation For Semiconductor Components App 20090079010 - DeLoach; Juanita ; et al.	2009-03-26
Process method to facilitate silicidation Grant 7,448,395 - Lu , et al. November 11, 2	2008-11-11
Method of Forming a Fully Silicided Semiconductor Device with Independent Gate and Source/Drain Doping and Related Device App 20080265345 - Yu; Shaofeng ; et al.	2008-10-30
Method Of Forming A Fully Silicided Semiconductor Device With Independent Gate And Source/drain Doping And Related Device App 20080265420 - Yu; Shaofeng ; et al.	2008-10-30
Method for manufacturing a semiconductor device containing metal silicide regions Grant 7,422,967 - DeLoach , et al. September 9, 2	2008-09-09
Method for manufacturing a semiconductor device having silicided regions Grant 7,422,968 - Lu , et al. September 9, 2	2008-09-09
Process method to optimize fully silicided gate (FUSI) thru PAI implant App 20080206973 - Johnson; Frank Scott ; et al.	2008-08-28
Formation of a Selective Carbon-Doped Epitaxial Cap Layer on Selective Epitaxial SiGe App 20080199999 - Weijtmans; Johan ; et al.	2008-08-21
Ebeam inspection for detecting gate dielectric punch through and/or incomplete silicidation or metallization events for transistors having metal gate electrodes App 20080176345 - Yu; Shaofeng ; et al.	2008-07-24
Semiconductor Device Having A Silicided Gate Electrode And Method Of Manufacture Therefor App 20080135945 - Lu; Jiong-Ping	2008-06-12
Semiconductor device having a silicided gate electrode and method of manufacture therefor Grant 7,348,265 - Lu March 25, 2	2008-03-25
Low Stress Sacrificial Cap Layer App 20080064175 - Lu; Jiong-Ping ; et al.	2008-03-13
Method for manufacturing a silicided gate electrode using a buffer layer Grant 7,341,933 - Yu , et al. March 11, 2	2008-03-11
Method for manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same Grant 7,338,888 - Lu , et al. March 4, 2	2008-03-04
Silicide formation using a low temperature anneal process Grant 7,335,595 - Robertson , et al. February 26, 2	2008-02-26
Low Stress Sacrificial Cap Layer App 20070269951 - Lu; Jiong-Ping ; et al.	2007-11-22
Method for fabricating dual work function metal gates Grant 7,253,049 - Lu , et al. August 7, 2	2007-08-07
Process for defect reduction in electrochemical plating Grant 7,253,124 - Lu , et al. August 7, 2	2007-08-07
FUSI integration method using SOG as a sacrificial planarization layer App 20070173047 - Lu; Jiong-Ping ; et al.	2007-07-26
Process For Selectively Removing Dielectric Material in the Presence of Metal Silicide App 20070161246 - Obeng; Yaw S. ; et al.	2007-07-12
Method for fabricating a transistor using a low temperature spike anneal App 20070099407 - Lu; Jiong-Ping ; et al.	2007-05-03
Integrated circuit metal silicide method Grant 7,208,409 - Lu , et al. April 24, 2	2007-04-24
Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffing Grant 7,199,032 - Yue , et al. April 3, 2	2007-04-03
Plating-rinse-plating process for fabricating copper interconnects Grant 7,198,705 - Chen , et al. April 3, 2	2007-04-03
Semiconductor Device Having a Fully Silicided Gate Electrode and Method of Manufacture Therefor App 20070063294 - Bu; Haowen ; et al.	2007-03-22
Integration scheme for using silicided dual work function metal gates Grant 7,183,187 - Lu , et al. February 27, 2	2007-02-27
Semiconductor device having a fully silicided gate electrode and method of manufacture therefor Grant 7,148,143 - Bu , et al. December 12, 2	2006-12-12
Novel high-k dielectric materials and processes for manufacturing them App 20060270148 - Lu; Jiong-Ping ; et al.	2006-11-30
Novel method for manufacturing a semiconductor device containing metal silicide regions App 20060258091 - DeLoach; Juanita ; et al.	2006-11-16
Method for Improving the Thermal Stability of Silicide App 20060246668 - Lu; Jiong-Ping ; et al.	2006-11-02
Semiconductor devices and methods of manufacturing such semiconductor devices Grant 7,101,788 - Smith , et al. September 5, 2	2006-09-05
NiSi metal gate stacks using a boron-trap Grant 7,098,094 - Lu August 29, 2	2006-08-29
Method for fabricating dual work function metal gates App 20060134844 - Lu; Jiong-Ping ; et al.	2006-06-22
Method for manufacturing a silicided gate electrode using a buffer layer App 20060121713 - Yu; Shaofeng ; et al.	2006-06-08
Silicide method for CMOS integrated circuits Grant 7,029,967 - Zhao , et al. April 18, 2	2006-04-18
Method for improving the thermal stability of silicide App 20060040438 - Lu; Jiong-Ping ; et al.	2006-02-23
Method for manufacturing a semiconductor device having silicided regions App 20060024882 - Lu; Jiong-Ping ; et al.	2006-02-02
Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffing App 20060024935 - Yue; Duofeng ; et al.	2006-02-02
Method for reducing metal silicide excessive encroachment defects in the manufacture of a semiconductor device having silicided source/drain regions App 20060024938 - Yue; Duofeng ; et al.	2006-02-02
Silicide method for CMOS integrated circuits App 20060019478 - Zhao; Song ; et al.	2006-01-26
Process method to facilitate silicidation App 20060014393 - Lu; Jiong-Ping ; et al.	2006-01-19
Silicide formation using a low temperature anneal process App 20060014387 - Robertson; Lance S. ; et al.	2006-01-19
Integration scheme for using silicided dual work function metal gates App 20050260841 - Lu, Jiong-Ping ; et al.	2005-11-24
Method and apparatus for improving adhesion between layers in integrated devices Grant 6,958,290 - Faust, Jr. , et al. October 25, 2	2005-10-25
Semiconductor device having a fully silicided gate electrode and method of manufacture therefor App 20050215055 - Bu, Haowen ; et al.	2005-09-29
Method for manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same App 20050215037 - Lu, Jiong-Ping ; et al.	2005-09-29
Integrated circuit metal silicide method App 20050208764 - Lu, Jiong-Ping ; et al.	2005-09-22
Semiconductor device having a silicided gate electrode and method of manufacture therefor App 20050189599 - Lu, Jiong-Ping	2005-09-01
System for improving thermal stability of copper damascene structure App 20050186788 - Lu, Jiong-Ping ; et al.	2005-08-25
Methods for providing improved layer adhesion in a semiconductor device Grant 6,927,159 - Faust , et al. August 9, 2	2005-08-09
Novel high-k dielectric materials and processes for manufacturing them App 20050167726 - Lu, Jiong-Ping ; et al.	2005-08-04
NiSi metal gate stacks using a boron-trap App 20050130366 - Lu, Jiong-Ping	2005-06-16
System for improving thermal stability of copper damascene structure Grant 6,903,000 - Lu , et al. June 7, 2	2005-06-07
Capacitor formed on a recrystallized polysilicon layer and a method of manufacture therefor App 20050110114 - Lu, Jiong-Ping ; et al.	2005-05-26
Nickel silicide - silicon nitride adhesion through surface passivation App 20050090087 - Lu, Jiong-Ping ; et al.	2005-04-28
High-k dielectric materials and processes for manufacturing them Grant 6,861,695 - Lu , et al. March 1, 2	2005-03-01
Nickel silicide--silicon nitride adhesion through surface passivation Grant 6,831,008 - Lu , et al. December 14, 2	2004-12-14
Methods for providing improved layer adhesion in a semiconductor device App 20040241979 - Faust, Richard Allen ; et al.	2004-12-02
Integrated circuit dielectric and method Grant 6,800,547 - Lu , et al. October 5, 2	2004-10-05
High-K dielectric materials and processes for manufacturing them Grant 6,787,429 - Lu , et al. September 7, 2	2004-09-07
Method for improved cu electroplating in integrated circuit fabrication Grant 6,784,104 - Jiang , et al. August 31, 2	2004-08-31
Copper surface passivation during semiconductor manufacturing Grant 6,784,093 - Lu , et al. August 31, 2	2004-08-31
Plating-rinse-plating process for fabricating copper interconnects App 20040118692 - Chen, Linlin ; et al.	2004-06-24
Method for forming a conductive copper structure Grant 6,743,719 - Chen , et al. June 1, 2	2004-06-01
Method for forming a ternary diffusion barrier layer App 20040102033 - Lu, Jiong-Ping ; et al.	2004-05-27
System for preventing excess silicon consumption in ultra shallow junctions Grant 6,734,099 - Zhao , et al. May 11, 2	2004-05-11
Pre-ECD wet surface modification to improve wettability and reduced void defect Grant 6,730,597 - Lu , et al. May 4, 2	2004-05-04
Nickel silicide - silicon nitride adhesion through surface passivation App 20040061184 - Lu, Jiong-Ping ; et al.	2004-04-01
Method of preventing seam defects in isolated lines Grant 6,709,974 - Permana , et al. March 23, 2	2004-03-23
Si-rich surface layer capped diffusion barriers Grant 6,680,249 - Lu , et al. January 20, 2	2004-01-20
Nickel SALICIDE process technology for CMOS devices App 20030235973 - Lu, Jiong-Ping ; et al.	2003-12-25
Method and apparatus for improving adhesion between layers in integrated devices App 20030207562 - Faust, Richard A. JR. ; et al.	2003-11-06
Methods for chemical vapor deposition of tungsten on silicon or dielectric Grant 6,641,867 - Hsu , et al. November 4, 2	2003-11-04
Method of preventing seam defects in isolated lines App 20030199150 - Permana, David ; et al.	2003-10-23
System for reducing silicon-consumption through selective deposition Grant 6,630,394 - Lu , et al. October 7, 2	2003-10-07
Reliable interconnects with low via/contact resistance Grant 6,624,066 - Lu , et al. September 23, 2	2003-09-23
Pre-ECD wet surface modification to improve wettability and reduce void defect App 20030176064 - Lu, Jiong-Ping ; et al.	2003-09-18
Semiconductor devices and methods of manufacturing such semiconductor devices App 20030162384 - Smith, Patricia Beauregard ; et al.	2003-08-28
System for preventing excess silicon consumption in ultra shallow junctions App 20030124827 - Zhao, Jin ; et al.	2003-07-03
System for improving thermal stability of copper damascene structure App 20030124828 - Lu, Jiong-Ping ; et al.	2003-07-03
System For Reducing Silicon-consumption Through Selective Deposition App 20030124808 - Lu, Jiong-Ping ; et al.	2003-07-03
Electroplater and method App 20030116440 - Guldi, Richard L. ; et al.	2003-06-26
Process for high thermal stable contact formation in manufacturing sub-quarter-micron CMOS devices Grant 6,559,050 - McKee , et al. May 6, 2	2003-05-06
Method for improved cu electroplating in integrated circuit fabrication App 20030022493 - Jiang, Qing-Tang ; et al.	2003-01-30
Si-rich surface layer capped diffusion barriers App 20020192950 - Lu, Jiong-Ping ; et al.	2002-12-19
Si-rich surface layer capped diffusion barriers App 20020180044 - Lu, Jiong-Ping ; et al.	2002-12-05
Novel high-K dielectric materials and processes for manufacturing them App 20020177268 - Lu, Jiong-Ping ; et al.	2002-11-28
Use of a sacrificial layer to facilitate metallization for small features App 20020137337 - Lu, Jiong-Ping ; et al.	2002-09-26
Reliable interconnects with low via/contact resistance App 20020110999 - Lu, Jiong-Ping ; et al.	2002-08-15
Electrochemical reduction of copper seed for reducing ECD voids App 20020100693 - Lu, Jiong-Ping ; et al.	2002-08-01
Process for isolating an exposed conducting surface App 20020086522 - Lu, Jiong-Ping ; et al.	2002-07-04
Process for defect reduction in electrochemical plating App 20020076929 - Lu, Jiong-Ping ; et al.	2002-06-20
Method for improving barrier properties of refractory metals/metal nitrides with a safer alternative to silane App 20020072227 - Russell, Noel ; et al.	2002-06-13
Elimination of overhang in liner/barrier/seed layers using post-deposition sputter etch App 20020058409 - Lin, Ching-Te ; et al.	2002-05-16
Plasma-enhanced Chemical Vapor Deposition Of A Nucleation Layer In A Tungsten Metallization Process App 20020028578 - LU, JIONG-PING ; et al.	2002-03-07
Integrated circuit dielectric and method App 20020017641 - Lu, Jiong-Ping ; et al.	2002-02-14
Metal barrier for copper interconnects that incorporates silicon in the metal barrier or at the copper/metal barrier interface App 20020009880 - Jiang, Qing-Tang ; et al.	2002-01-24
In-situ co-deposition of Si iN diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability App 20020001944 - Faust, Richard A. ; et al.	2002-01-03
Integrated circuit dielectric and method Grant 6,265,303 - Lu , et al. July 24, 2	2001-07-24
Copper bond pad process Grant 6,218,732 - Russell , et al. April 17, 2	2001-04-17
CVD-based process for manufacturing stable low-resistivity poly-metal gate electrodes Grant 6,187,656 - Lu , et al. February 13, 2	2001-02-13
Low resistivity poly-silicon gate produced by selective metal growth Grant 6,184,129 - Hwang , et al. February 6, 2	2001-02-06
TiN+Al films and processes Grant 6,120,842 - Lu , et al. September 19, 2	2000-09-19
Stable and low resistance metal/barrier/silicon stack structure and related process for manufacturing Grant 6,100,188 - Lu , et al. August 8, 2	2000-08-08
Tungsten-nitride for contact barrier application Grant 6,093,642 - Cho , et al. July 25, 2	2000-07-25
Process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density Grant 6,017,818 - Lu January 25, 2	2000-01-25
Integrated circuit dielectric and method Grant 6,008,540 - Lu , et al. December 28, 1	1999-12-28
Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures Grant 5,913,145 - Lu , et al. June 15, 1	1999-06-15