| Patent | Date |
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Three-dimensional Field Effect Device
App 20220130992 - Zhou; Huimei ; et al. | 2022-04-28 |
Three-dimensional field effect device
Grant 11,222,981 - Zhou , et al. January 11, 2 | 2022-01-11 |
Three-dimensional field effect device
Grant 11,183,593 - Zhou , et al. November 23, 2 | 2021-11-23 |
Stress induction in 3D device channel using elastic relaxation of high stress material
Grant 11,094,823 - Cheng , et al. August 17, 2 | 2021-08-17 |
Wimpy device by selective laser annealing
Grant 11,088,026 - Cheng , et al. August 10, 2 | 2021-08-10 |
Steep-switch vertical field effect transistor
Grant 11,069,744 - Chanemougame , et al. July 20, 2 | 2021-07-20 |
Strained silicon complementary metal oxide semiconductor including a silicon containing tensile n-type fin field effect transistor and silicon containing compressive p-type fin field effect transistor formed using a dual relaxed substrate
Grant 10,998,441 - Cheng , et al. May 4, 2 | 2021-05-04 |
Three-dimensional Field Effect Device
App 20210118873 - Zhou; Huimei ; et al. | 2021-04-22 |
Three-dimensional field effect device
Grant 10,971,490 - Zhou , et al. April 6, 2 | 2021-04-06 |
Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates
Grant 10,930,756 - Bi , et al. February 23, 2 | 2021-02-23 |
Silicon residue removal in nanosheet transistors
Grant 10,896,816 - Bi , et al. January 19, 2 | 2021-01-19 |
Nanosheet single gate (SG) and extra gate (EG) field effect transistor (FET) co-integration
Grant 10,741,660 - Loubet , et al. A | 2020-08-11 |
Integration of strained silicon germanium PFET device and silicon NFET device for finFET structures
Grant 10,734,504 - Doris , et al. | 2020-08-04 |
Protection of high-K dielectric during reliability anneal on nanosheet structures
Grant 10,692,985 - Loubet , et al. | 2020-06-23 |
Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates
Grant 10,658,493 - Bi , et al. | 2020-05-19 |
Gate Spacer And Inner Spacer Formation For Nanosheet Transistors Having Relatively Small Space Between Gates
App 20200152764 - Bi; Zhenxing ; et al. | 2020-05-14 |
Co-integration of elastic and plastic relaxation on the same wafer
Grant 10,644,110 - Bedell , et al. | 2020-05-05 |
Wimpy Device By Selective Laser Annealing
App 20200126862 - Cheng; Kangguo ; et al. | 2020-04-23 |
Steep-switch Vertical Field Effect Transistor
App 20200091237 - Chanemougame; Daniel ; et al. | 2020-03-19 |
Preventing threshold voltage variability in stacked nanosheets
Grant 10,580,858 - Guillorn , et al. | 2020-03-03 |
Stress Induction In 3d Device Channel Using Elastic Relaxation Of High Stress Material
App 20200066910 - Cheng; Kangguo ; et al. | 2020-02-27 |
Wimpy device by selective laser annealing
Grant 10,566,240 - Cheng , et al. Feb | 2020-02-18 |
Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates
Grant 10,566,445 - Bi , et al. Feb | 2020-02-18 |
Three-dimensional Field Effect Device
App 20200035823 - Zhou; Huimei ; et al. | 2020-01-30 |
Three-dimensional Field Effect Device
App 20200035824 - Zhou; Huimei ; et al. | 2020-01-30 |
Stress induction in 3D device channel using elastic relaxation of high stress material
Grant 10,541,335 - Cheng , et al. Ja | 2020-01-21 |
Steep-switch vertical field effect transistor
Grant 10,541,272 - Chanemougame , et al. Ja | 2020-01-21 |
Nanosheet Single Gate (sg) And Extra Gate (eg) Field Effect Transistor (fet) Co-integration
App 20190378906 - Loubet; Nicolas J. ; et al. | 2019-12-12 |
Three-dimensional field effect device
Grant 10,490,667 - Zhou , et al. Nov | 2019-11-26 |
Three-dimensional Field Effect Device
App 20190355845 - Zhou; Huimei ; et al. | 2019-11-21 |
Three-dimensional Field Effect Device
App 20190355717 - Zhou; Huimei ; et al. | 2019-11-21 |
Gate Spacer And Inner Spacer Formation For Nanosheet Transistors Having Relatively Small Space Between Gates
App 20190341465 - Bi; Zhenxing ; et al. | 2019-11-07 |
Integration of strained silicon germanium PFET device and silicon NFET device for FINFET structures
Grant 10,446,670 - Doris , et al. Oc | 2019-10-15 |
Gate Spacer And Inner Spacer Formation For Nanosheet Transistors Having Relatively Small Space Between Gates
App 20190305106 - Bi; Zhenxing ; et al. | 2019-10-03 |
Integration of strained silicon germanium PFET device and silicon NFET device for finFET structures
Grant 10,396,185 - Doris , et al. A | 2019-08-27 |
Multiple-threshold Nanosheet Transistors
App 20190252495 - Bao; Ruqiang ; et al. | 2019-08-15 |
Co-integration of silicon and silicon-germanium channels for nanosheet devices
Grant 10,367,062 - Guillorn , et al. July 30, 2 | 2019-07-30 |
Co-integration Of Elastic And Plastic Relaxation On The Same Wafer
App 20190207000 - BEDELL; STEPHEN W. ; et al. | 2019-07-04 |
Multiple-threshold nanosheet transistors
Grant 10,340,340 - Bao , et al. | 2019-07-02 |
Protection Of High-k Dielectric During Reliability Anneal On Nanosheet Structures
App 20190189766 - Loubet; Nicolas J. ; et al. | 2019-06-20 |
Vertically integrated nanosheet fuse
Grant 10,319,676 - Chao , et al. | 2019-06-11 |
Protection of high-K dielectric during reliability anneal on nanosheet structures
Grant 10,304,936 - Loubet , et al. | 2019-05-28 |
Co-integration of elastic and plastic relaxation on the same wafer
Grant 10,297,665 - Bedell , et al. | 2019-05-21 |
Wimpy device by selective laser annealing
Grant 10,262,900 - Cheng , et al. | 2019-04-16 |
Steep-switch Vertical Field Effect Transistor
App 20190109177 - Chanemougame; Daniel ; et al. | 2019-04-11 |
Nanosheet MOSFET with partial release and source/drain epitaxy
Grant 10,249,739 - Guillorn , et al. | 2019-04-02 |
Silicon Residue Removal In Nanosheet Transistors
App 20190096669 - Bi; Zhenxing ; et al. | 2019-03-28 |
Integrating and isolating NFET and PFET nanosheet transistors on a substrate
Grant 10,242,920 - Guillorn , et al. | 2019-03-26 |
Preventing threshold voltage variability in stacked nanosheets
Grant 10,177,226 - Guillorn , et al. J | 2019-01-08 |
Preventing Threshold Voltage Variability In Stacked Nanosheets
App 20190006462 - Guillorn; Michael A. ; et al. | 2019-01-03 |
Co-integration of silicon and silicon-germanium channels for nanosheet devices
Grant 10,170,552 - Guillorn , et al. J | 2019-01-01 |
Integrating And Isolating Nfet And Pfet Nanosheet Transistors On A Substrate
App 20180374761 - Guillorn; Michael A. ; et al. | 2018-12-27 |
Integration Of Strained Silicon Germanium Pfet Device And Silicon Nfet Device For Finfet Structures
App 20180323278 - Doris; Bruce B. ; et al. | 2018-11-08 |
Stress Induction In 3d Device Channel Using Elastic Relaxation Of High Stress Material
App 20180301557 - Cheng; Kangguo ; et al. | 2018-10-18 |
Co-integration Of Silicon And Silicon-germanium Channels For Nanosheet Devices
App 20180277626 - Guillorn; Michael A. ; et al. | 2018-09-27 |
Integrating and isolating nFET and pFET nanosheet transistors on a substrate
Grant 10,074,575 - Guillorn , et al. September 11, 2 | 2018-09-11 |
Nanosheet Mosfet With Partial Release And Source/drain Epitaxy
App 20180254329 - Guillorn; Michael A. ; et al. | 2018-09-06 |
Wimpy Device By Selective Laser Annealing
App 20180226296 - Cheng; Kangguo ; et al. | 2018-08-09 |
Vertically integrated nanosheet fuse
Grant 10,043,748 - Chao , et al. August 7, 2 | 2018-08-07 |
Vertically Integrated Nanosheet Fuse
App 20180218978 - Chao; Robin H. ; et al. | 2018-08-02 |
Vertically Integrated Nanosheet Fuse
App 20180218979 - Chao; Robin H. ; et al. | 2018-08-02 |
Co-integration of silicon and silicon-germanium channels for nanosheet devices
Grant 10,026,810 - Guillorn , et al. July 17, 2 | 2018-07-17 |
Co-integration Of Elastic And Plastic Relaxation On The Same Wafer
App 20180197953 - Bedell; Stephen W. ; et al. | 2018-07-12 |
Stress Induction In 3d Device Channel Using Elastic Relaxation Of High Stress Material
App 20180197992 - Cheng; Kangguo ; et al. | 2018-07-12 |
Stress induction in 3D device channel using elastic relaxation of high stress material
Grant 10,020,398 - Cheng , et al. July 10, 2 | 2018-07-10 |
Polysilicon residue removal in nanosheet MOSFETs
Grant 9,997,352 - Bi , et al. June 12, 2 | 2018-06-12 |
Wimpy device by selective laser annealing
Grant 9,991,166 - Cheng , et al. June 5, 2 | 2018-06-05 |
Vertically integrated nanosheet fuse
Grant 9,978,678 - Chao , et al. May 22, 2 | 2018-05-22 |
Compressive strain semiconductor substrates
Grant 9,972,684 - Balakrishnan , et al. May 15, 2 | 2018-05-15 |
Preventing Threshold Voltage Variability In Stacked Nanosheets
App 20180122899 - Guillorn; Michael A. ; et al. | 2018-05-03 |
Multiple-threshold Nanosheet Transistors
App 20180114833 - Bao; Ruqiang ; et al. | 2018-04-26 |
Compressive Strain Semiconductor Substrates
App 20180108736 - Balakrishnan; Karthik ; et al. | 2018-04-19 |
Co-integration of elastic and plastic relaxation on the same wafer
Grant 9,941,355 - Bedell , et al. April 10, 2 | 2018-04-10 |
Polysilicon Residue Removal In Nanosheet Mosfets
App 20180090315 - Bi; Zhenxing ; et al. | 2018-03-29 |
Wimpy device by selective laser annealing
Grant 9,911,656 - Cheng , et al. March 6, 2 | 2018-03-06 |
Strained Silicon Complementary Metal Oxide Semiconductor Including A Silicon Containing Tensile N-type Fin Field Effect Transistor And Silicon Containing Compressive P-type Fin Field Effect Transistor Formed Using A Dual Relaxed Substrate
App 20180053853 - Cheng; Kangguo ; et al. | 2018-02-22 |
Wimpy Device By Selective Laser Annealing
App 20180053693 - Cheng; Kangguo ; et al. | 2018-02-22 |
Wimpy Device By Selective Laser Annealing
App 20180053692 - Cheng; Kangguo ; et al. | 2018-02-22 |
Wimpy Device By Selective Laser Annealing
App 20180053691 - Cheng; Kangguo ; et al. | 2018-02-22 |
Method and structure for forming buried ESD with FinFETs
Grant 9,865,587 - Cheng , et al. January 9, 2 | 2018-01-09 |
Semiconductor Device Including Optimized Elastic Strain Buffer
App 20180006154 - Loubet; Nicolas J. ; et al. | 2018-01-04 |
Semiconductor device including optimized elastic strain buffer
Grant 9,859,426 - Loubet , et al. January 2, 2 | 2018-01-02 |
Integration Of Strained Silicon Germanium Pfet Device And Silicon Nfet Device For Finfet Structures
App 20170365685 - Doris; Bruce B. ; et al. | 2017-12-21 |
Method And Structure For Forming Buried Esd With Finfets
App 20170365596 - Cheng; Kangguo ; et al. | 2017-12-21 |
Strained Silicon Complementary Metal Oxide Semiconductor Including A Silicon Containing Tensile N-type Fin Field Effect Transistor And Silicon Containing Compressive P-type Fin Field Effect Transistor Formed Using A Dual Relaxed Substrate
App 20170358677 - Cheng; Kangguo ; et al. | 2017-12-14 |
Strained silicon complementary metal oxide semiconductor including a silicon containing tensile N-type fin field effect transistor and silicon containing compressive P-type fin field effect transistor formed using a dual relaxed substrate
Grant 9,842,929 - Cheng , et al. December 12, 2 | 2017-12-12 |
Protection Of High-k Dielectric During Reliability Anneal On Nanosheet Structures
App 20170323949 - Loubet; Nicolas J. ; et al. | 2017-11-09 |
Co-integration Of Silicon And Silicon-germanium Channels For Nanosheet Devices
App 20170294357 - Guillorn; Michael A. ; et al. | 2017-10-12 |
Isolation of bulk FET devices with embedded stressors
Grant 9,761,722 - Jagannathan , et al. September 12, 2 | 2017-09-12 |
Integration of strained silicon germanium PFET device and silicon NFET device for finFET structures
Grant 9,761,699 - Doris , et al. September 12, 2 | 2017-09-12 |
Co-integration Of Silicon And Silicon-germanium Channels For Nanosheet Devices
App 20170256612 - Guillorn; Michael A. ; et al. | 2017-09-07 |
Co-integration Of Silicon And Silicon-germanium Channels For Nanosheet Devices
App 20170256610 - Guillorn; Michael A. ; et al. | 2017-09-07 |
Co-integration of silicon and silicon-germanium channels for nanosheet devices
Grant 9,755,017 - Guillorn , et al. September 5, 2 | 2017-09-05 |
Vertical transistor with uniform bottom spacer formed by selective oxidation
Grant 9,741,626 - Cheng , et al. August 22, 2 | 2017-08-22 |
Defect reduction in channel silicon germanium on patterned silicon
Grant 9,735,062 - Doris , et al. August 15, 2 | 2017-08-15 |
Method and structure for forming buried ESD with FinFETs
Grant 9,716,086 - Cheng , et al. July 25, 2 | 2017-07-25 |
Compressive strain semiconductor substrates
Grant 9,716,173 - Balakrishnan , et al. July 25, 2 | 2017-07-25 |
Polysilicon residue removal in nanosheet MOSFETs
Grant 9,679,780 - Bi , et al. June 13, 2 | 2017-06-13 |
Integration Of Strained Silicon Germanium Pfet Device And Silicon Nfet Device For Finfet Structures
App 20160218215 - Doris; Bruce B. ; et al. | 2016-07-28 |
Integration Of Strained Silicon Germanium Pfet Device And Silicon Nfet Device For Finfet Structures
App 20160218192 - Doris; Bruce B. ; et al. | 2016-07-28 |
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