loadpatents
Patent applications and USPTO patent grants for Lin; Yih-Ann.The latest application filed is for "air spacers around contact plugs and method forming same".
Patent | Date |
---|---|
Air Spacers Around Contact Plugs and Method Forming Same App 20220310820 - Huang; Chen-Huang ;   et al. | 2022-09-29 |
Method Of Forming A Single Metal That Performs N Work Function And P Work Function In A High-k/metal Gate Process App 20220216205 - Lin; Yih-Ann ;   et al. | 2022-07-07 |
Air spacers around contact plugs and method forming same Grant 11,355,616 - Huang , et al. June 7, 2 | 2022-06-07 |
Single metal that performs N work function and P work function in a high-K/metal gate Grant 11,289,481 - Lin , et al. March 29, 2 | 2022-03-29 |
FinFET Device App 20210376141 - Lin; Chia Tai ;   et al. | 2021-12-02 |
Residue removal in metal gate cutting process Grant 11,145,752 - Feng , et al. October 12, 2 | 2021-10-12 |
V-shape recess profile for embedded source/drain epitaxy Grant 11,121,255 - Li , et al. September 14, 2 | 2021-09-14 |
FinFET device with fins of non-uniform width Grant 11,094,825 - Lin , et al. August 17, 2 | 2021-08-17 |
Methods for Forming Fin Field-Effect Transistors App 20210242088 - Chen; Ryan Chia-Jen ;   et al. | 2021-08-05 |
Self-Aligned Contact Air Gap Formation App 20210183996 - Lee; Kai-Hsuan ;   et al. | 2021-06-17 |
Fin Field-Effect Transistor Devices and Methods of Forming the Same App 20210159123 - Hung; Chih-Chang ;   et al. | 2021-05-27 |
Air Spacers Around Contact Plugs and Method Forming Same App 20210134973 - Huang; Chen-Huang ;   et al. | 2021-05-06 |
Methods for forming fin field-effect transistors Grant 10,991,627 - Chen , et al. April 27, 2 | 2021-04-27 |
Methods for forming Fin field-effect transistors Grant 10,957,600 - Chen , et al. March 23, 2 | 2021-03-23 |
Residue Removal in Metal Gate Cutting Process App 20210083072 - Feng; Chieh-Ning ;   et al. | 2021-03-18 |
Self-aligned contact air gap formation Grant 10,923,565 - Lee , et al. February 16, 2 | 2021-02-16 |
Fin field-effect transistor devices and methods of forming the same Grant 10,916,477 - Hung , et al. February 9, 2 | 2021-02-09 |
FinFET Device App 20200279945 - Lin; Chia Tai ;   et al. | 2020-09-03 |
V-shape recess profile for embedded source/drain epitaxy Grant 10,763,366 - Li , et al. Sep | 2020-09-01 |
V-Shape Recess Profile for Embedded Source/Drain Epitaxy App 20200273993 - Li; Chii-Horng ;   et al. | 2020-08-27 |
Method of forming an integrated circuit using a patterned mask layer Grant 10,665,457 - Hsieh , et al. | 2020-05-26 |
FinFET device Grant 10,658,509 - Lin , et al. | 2020-05-19 |
V-shape recess profile for embedded source/drain epitaxy Grant 10,651,309 - Li , et al. | 2020-05-12 |
Self-Aligned Contact Air Gap Formation App 20200105867 - Lee; Kai-Hsuan ;   et al. | 2020-04-02 |
Fin Field-Effect Transistor Devices and Methods of Forming the Same App 20200105613 - Hung; Chih-Chang ;   et al. | 2020-04-02 |
V-Shape Recess Profile for Embedded Source/Drain Epitaxy App 20200052121 - Li; Chii-Horng ;   et al. | 2020-02-13 |
Methods for Forming Fin Field-Effect Transistors App 20200043797 - Chen; Ryan Chia-Jen ;   et al. | 2020-02-06 |
V-shape Recess Profile For Embedded Source/drain Epitaxy App 20180337283 - Li; Chii-Horng ;   et al. | 2018-11-22 |
Methods for Forming Fin Field-Effect Transistors App 20180323108 - Chen; Ryan Chia-Jen ;   et al. | 2018-11-08 |
Methods for forming Fin field-effect transistors Grant 10,083,872 - Chen , et al. September 25, 2 | 2018-09-25 |
Method of Forming a Single Metal that Performs N Work Function and P Work Function in a High-K/Metal Gate Process App 20180247937 - Lin; Yih-Ann ;   et al. | 2018-08-30 |
Method of Forming an Integrated Circuit App 20180218904 - Hsieh; Tzu-Yen ;   et al. | 2018-08-02 |
V-shape recess profile for embedded source/drain epitaxy Grant 10,038,095 - Li , et al. July 31, 2 | 2018-07-31 |
Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process Grant 9,960,160 - Lin , et al. May 1, 2 | 2018-05-01 |
Method of forming an integrated circuit using a patterned mask layer Grant 9,934,971 - Hsieh , et al. April 3, 2 | 2018-04-03 |
FinFET Device App 20180090607 - Lin; Chia Tai ;   et al. | 2018-03-29 |
FinFET device Grant 9,825,173 - Lin , et al. November 21, 2 | 2017-11-21 |
Method of Forming an Integrated Circuit App 20170236712 - Hsieh; Tzu-Yen ;   et al. | 2017-08-17 |
Methods for Forming Fin Field-Effect Transistors App 20170229348 - Chen; Ryan Chia-Jen ;   et al. | 2017-08-10 |
V-Shape Recess Profile for Embedded Source/Drain Epitaxy App 20170222053 - Li; Chii-Horng ;   et al. | 2017-08-03 |
Method of forming an integrated circuit using a patterned mask layer Grant 9,640,398 - Hsieh , et al. May 2, 2 | 2017-05-02 |
Semiconductor fin structures and methods for forming the same Grant 9,633,905 - Chen , et al. April 25, 2 | 2017-04-25 |
Etching process Grant 9,601,333 - Yeh , et al. March 21, 2 | 2017-03-21 |
Integrated high-K/metal gate in CMOS process flow Grant 9,601,388 - Chen , et al. March 21, 2 | 2017-03-21 |
Integrated High-K/Metal Gate in CMOS Process Flow App 20160293490 - Chen; Ryan Chia-Jen ;   et al. | 2016-10-06 |
FinFET device structure and methods of making same Grant 9,349,839 - Lin , et al. May 24, 2 | 2016-05-24 |
Etching Process App 20160099151 - Yeh; Ming-Hsi ;   et al. | 2016-04-07 |
Integrated high-k/metal gate in CMOS process flow Grant 9,257,426 - Chen , et al. February 9, 2 | 2016-02-09 |
Finfet Device App 20160035874 - Lin; Chia Tai ;   et al. | 2016-02-04 |
Method of making a FinFET device Grant 9,190,496 - Lin , et al. November 17, 2 | 2015-11-17 |
Method of forming a semiconductor device Grant 9,153,440 - Lin , et al. October 6, 2 | 2015-10-06 |
Method Of Forming An Integrated Circuit App 20150243504 - HSIEH; Tzu-Yen ;   et al. | 2015-08-27 |
Method of forming an integrated circuit using a patterned mask layer Grant 9,059,085 - Hsieh , et al. June 16, 2 | 2015-06-16 |
FinFET Device Structure and Methods of Making Same App 20150118815 - Lin; Yu-Chao ;   et al. | 2015-04-30 |
Integrated High-K/Metal Gate In CMOS Process Flow App 20150061031 - Chen; Ray Chia-Jen ;   et al. | 2015-03-05 |
FinFET device structure and methods of making same Grant 8,946,014 - Lin , et al. February 3, 2 | 2015-02-03 |
Method to pre-heat and stabilize etching chamber condition and improve mean time between cleaning Grant 8,911,559 - Lin , et al. December 16, 2 | 2014-12-16 |
Method Of Forming An Integrated Circuit App 20140295654 - HSIEH; Tzu-Yen ;   et al. | 2014-10-02 |
Integrated high-k/metal gate in CMOS process flow Grant 8,841,731 - Chen , et al. September 23, 2 | 2014-09-23 |
N2 based plasma treatment and ash for HK metal gate protection Grant 8,791,001 - Lin , et al. July 29, 2 | 2014-07-29 |
Method of forming an integrated circuit Grant 8,772,183 - Hsieh , et al. July 8, 2 | 2014-07-08 |
FinFET Device Structure and Methods of Making Same App 20140183661 - Lin; Yu-Chao ;   et al. | 2014-07-03 |
Method Of Forming A Single Metal That Performs N Work Function And P Work Function In A High-K/Metal Gate Process App 20140001566 - Lin; Yih-Ann ;   et al. | 2014-01-02 |
Semiconductor Fin Structures and Methods for Forming the Same App 20130277759 - Chen; Ryan Chia-Jen ;   et al. | 2013-10-24 |
Methods of fabricating high-K metal gate devices Grant 8,551,837 - Lin , et al. October 8, 2 | 2013-10-08 |
Method Of Forming A Semiconductor Device App 20130252425 - LIN; Chih-Han ;   et al. | 2013-09-26 |
Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process Grant 8,524,588 - Lin , et al. September 3, 2 | 2013-09-03 |
Integrated High-k/metal Gate In Cmos Process Flow App 20130140643 - Chen; Ryan Chia-Jen ;   et al. | 2013-06-06 |
Method Of Forming An Integrated Circuit App 20130102136 - HSIEH; Tzu-Yen ;   et al. | 2013-04-25 |
Integrated high-K/metal gate in CMOS process flow Grant 8,383,502 - Chen , et al. February 26, 2 | 2013-02-26 |
Method to integrate gate etching as all-in-one process for high K metal gate Grant 8,304,349 - Lin , et al. November 6, 2 | 2012-11-06 |
Patterning methodology for uniformity control Grant 8,273,632 - Lin , et al. September 25, 2 | 2012-09-25 |
Sealing layer of a field effect transistor Grant 8,258,588 - Lin , et al. September 4, 2 | 2012-09-04 |
Methods Of Fabricating High-k Metal Gate Devices App 20120164822 - Lin; Yih-Ann ;   et al. | 2012-06-28 |
Patterning Methodology for Uniformity Control App 20120108046 - Lin; Yu Chao ;   et al. | 2012-05-03 |
Method for fabricating an isolation structure Grant 8,163,625 - Lin , et al. April 24, 2 | 2012-04-24 |
Methods of fabricating high-k metal gate devices Grant 8,148,249 - Lin , et al. April 3, 2 | 2012-04-03 |
Integrated High-K/Metal Gate in CMOS Process Flow App 20110275212 - Chen; Ryan Chia-Jen ;   et al. | 2011-11-10 |
Patterning methodology for uniformity control Grant 8,053,323 - Lin , et al. November 8, 2 | 2011-11-08 |
Method of integrating high-K/metal gate in CMOS process flow Grant 8,003,507 - Chen , et al. August 23, 2 | 2011-08-23 |
Sealing Layer Of A Field Effect Transistor App 20110031562 - LIN; Yu Chao ;   et al. | 2011-02-10 |
Method of defining gate structure height for semiconductor devices Grant 7,833,853 - Chen , et al. November 16, 2 | 2010-11-16 |
Method For Fabricating An Isolation Structure App 20100255654 - Lin; Yih-Ann ;   et al. | 2010-10-07 |
Solution for polymer and capping layer removing with wet dipping in HK metal gate etching process Grant 7,776,755 - Lin , et al. August 17, 2 | 2010-08-17 |
Method of reducing a critical dimension of a semiconductor device Grant 7,759,239 - Lin , et al. July 20, 2 | 2010-07-20 |
Method To Pre-heat And Stabilize Etching Chamber Condition And Improve Mean Time Between Cleaning App 20100071719 - Lin; Yu Chao ;   et al. | 2010-03-25 |
Methods Of Fabricating High-k Metal Gate Devices App 20100068876 - Lin; Yih-Ann ;   et al. | 2010-03-18 |
Method Of Defining Gate Structure Height For Semiconductor Devices App 20100068861 - Chen; Ryan Chia-Jen ;   et al. | 2010-03-18 |
N2 Based Plasma Treatment And Ash For Hk Metal Gate Protection App 20100062591 - Lin; Yu Chao ;   et al. | 2010-03-11 |
Novel Solution For Polymer And Capping Layer Removing With Wet Dipping In Hk Metal Gate Etching Process App 20100062590 - Lin; Jr Jung ;   et al. | 2010-03-11 |
Method Of Forming A Single Metal That Performs N Work Function And P Work Function In A High-k/metal Gate Process App 20100038721 - Lin; Yih-Ann ;   et al. | 2010-02-18 |
Novel Method To Integrate Gate Etching As All-in-one Process For High K Metal Gate App 20100041236 - Lin; Jr Jung ;   et al. | 2010-02-18 |
Method Of Integrating High-k/metal Gate In Cmos Process Flow App 20100041223 - Chen; Ryan Chia-Jen ;   et al. | 2010-02-18 |
Wet cleaning method to eliminate copper corrosion Grant 7,022,610 - Chou , et al. April 4, 2 | 2006-04-04 |
Method to enhance the adhesion between dry film and seed metal Grant 6,926,818 - Lin , et al. August 9, 2 | 2005-08-09 |
Wet cleaning method to eliminate copper corrosion App 20050136678 - Chou, Chun-Li ;   et al. | 2005-06-23 |
Plasma ashing/etching using solid sapphire disk App 20030234079 - Jiang, Yue-Ying ;   et al. | 2003-12-25 |
uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.
While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.
All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.