Lin; Mei-Hsuan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lin; Mei-Hsuan.The latest application filed is for "salicide formation using a cap layer".

Company Profile

0.20.21

Lin; Mei-Hsuan - Tainan City TW
Lin; Mei-Hsuan - Tainan TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Salicide Formation Using A Cap Layer App 20180261461 - Lin; Mei-Hsuan ; et al.	2018-09-13
Salicide formation using a cap layer Grant 9,978,604 - Lin , et al. May 22, 2	2018-05-22
Salicide formation using a cap layer Grant 9,343,318 - Lin , et al. May 17, 2	2016-05-17
Salicide Formation Using A Cap Layer App 20160093497 - LIN; Mei-Hsuan ; et al.	2016-03-31
MOS devices having non-uniform stressor doping Grant 9,209,270 - Lin , et al. December 8, 2	2015-12-08
MOS Devices Having Non-Uniform Stressor Doping App 20150171189 - Lin; Mei-Hsuan ; et al.	2015-06-18
Semiconductor structure having stressor Grant 9,024,391 - Lin , et al. May 5, 2	2015-05-05
MOS devices having non-uniform stressor doping Grant 8,994,097 - Lin , et al. March 31, 2	2015-03-31
Semiconductor Structure Having Stressor App 20150041857 - LIN; Mei-Hsuan ; et al.	2015-02-12
Integrated circuit having a stressor and method of forming the same Grant 8,846,492 - Lin , et al. September 30, 2	2014-09-30
Semiconductor structure having etch stop layer Grant 8,836,088 - Lin , et al. September 16, 2	2014-09-16
Optical proximity correction for active region design layout Grant 8,775,982 - Lin , et al. July 8, 2	2014-07-08
Method of manufacturing a semiconductor device Grant 8,765,545 - Lin , et al. July 1, 2	2014-07-01
Semiconductor Structure Having Etch Stop Layer App 20130299987 - LIN; Mei-Hsuan ; et al.	2013-11-14
Optical Proximity Correction For Active Region Design Layout App 20130285194 - Lin; Mei-Hsuan ; et al.	2013-10-31
Method Of Manufacturing A Semiconductor Device App 20130267069 - Lin; Mei-Hsuan ; et al.	2013-10-10
MOS Devices Having Non-Uniform Stressor Doping App 20130234217 - Lin; Mei-Hsuan ; et al.	2013-09-12
Optical proximity correction for active region design layout Grant 8,533,639 - Lin , et al. September 10, 2	2013-09-10
Method and system for modifying doped region design layout during mask preparation to tune device performance Grant 8,527,915 - Lin , et al. September 3, 2	2013-09-03
Semiconductor structure and method of manufacturing Grant 8,513,143 - Lin , et al. August 20, 2	2013-08-20
Salicide Formation Using A Cap Layer App 20130200442 - LIN; Mei-Hsuan ; et al.	2013-08-08
Method of manufacturing a semiconductor device Grant 8,470,660 - Lin , et al. June 25, 2	2013-06-25
Method And System For Modifying Doped Region Design Layout During Mask Preparation To Tune Device Performance App 20130111419 - Lin; Mei-Hsuan ; et al.	2013-05-02
Optical Proximity Correction For Active Region Design Layout App 20130069162 - Lin; Mei-Hsuan ; et al.	2013-03-21
Method of Manufacturing a Semiconductor Device App 20130071995 - Lin; Mei-Hsuan ; et al.	2013-03-21
Semiconductor Structure And Method Of Manufacturing App 20130043590 - LIN; Mei-Hsuan ; et al.	2013-02-21
Integrated Circuit Having A Stressor And Method Of Forming The Same App 20130020717 - LIN; Mei-Hsuan ; et al.	2013-01-24

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