Trademark applications and grants for Liang, Qingqing. Liang, Qingqing has 2 trademark applications. The latest application filed is for "QINRY"
Entity Type | INDIVIDUAL |
Address | Hongxing Village, Taiping Town, Binhai Room 301, Unit 1, Building 7, Xingchenli New District, Tianjin CHINA 300450 |
Patent Application | Date |
---|---|
BACKSIDE CONTACT OF A SEMICONDUCTOR DEVICE 20210242322 - 16/778546 LIANG; Qingqing ;   et al. | 2021-08-05 |
NON-VOLATILE MEMORY (NVM) STRUCTURE USING HOT CARRIER INJECTION (HCI) 20200373315 - 16/419606 LIANG; Qingqing ;   et al. | 2020-11-26 |
NON-VOLATILE MEMORY (NVM) STRUCTURE WITH FRONT AND BACK GATES 20200365740 - 16/415175 LIANG; Qingqing ;   et al. | 2020-11-19 |
CAPACITANCE BALANCE IN DUAL SIDED CONTACT SWITCH 20200204175 - 16/230884 LIANG; Qingqing ;   et al. | 2020-06-25 |
HIGH VOLTAGE (HV) METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET) IN SEMICONDUCTOR ON INSULATOR (SOI) TECHNOLOGY 20200185522 - 16/788197 LIANG; Qingqing ;   et al. | 2020-06-11 |
High voltage (HV) metal oxide semiconductor field effect transistor (MOSFET) in semiconductor on insulator (SOI) technology 11,081,582 - 16/788,197 Liang , et al. August 3, 2 | 2021-08-03 |
Backside contact of a semiconductor device 11,081,559 - 16/778,546 Liang , et al. August 3, 2 | 2021-08-03 |
Silicon-on-insulator backside contacts 10,896,958 - 16/690,454 Goktepeli , et al. January 19, 2 | 2021-01-19 |
Non-volatile memory (NVM) structure with front and back gates 10,840,383 - 16/415,175 Liang , et al. November 17, 2 | 2020-11-17 |
Buried oxide transcap devices 10,840,387 - 15/946,628 Marino , et al. November 17, 2 | 2020-11-17 |
Mark Image Registration | Serial | Trademark Application Date |
---|---|
![]() "QINRY" 98291136 |
QINRY 2023-11-29 |
![]() "QINRY" 97107894 |
QINRY 2021-11-04 |
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