| Patent | Date |
|---|
Source/drain Structure For Semiconductor Device
App 20220302281 - LEE; Chien-Wei ; et al. | 2022-09-22 |
Method For Manufacturing Semiconductor Structure With Reduced Nodule Defects
App 20220293415 - LIN; Che-Yu ; et al. | 2022-09-15 |
Method For Manufacturing Semiconductor Structure With Enlarged Volumes Of Source-drain Regions
App 20220293773 - YANG; Tsung-Hsi ; et al. | 2022-09-15 |
Source and drain stressors with recessed top surfaces
Grant 11,437,515 - Li , et al. September 6, 2 | 2022-09-06 |
Semiconductor device and method
Grant 11,437,497 - Tsai , et al. September 6, 2 | 2022-09-06 |
Method for fabricating semiconductor device
Grant 11,430,878 - Lee , et al. August 30, 2 | 2022-08-30 |
Nanosheet Semiconductor Device And Method For Manufacturing The Same
App 20220271171 - SU; Chien-Chang ; et al. | 2022-08-25 |
MOS devices having epitaxy regions with reduced facets
Grant 11,411,109 - Sung , et al. August 9, 2 | 2022-08-09 |
Source/drain Regions And Methods Of Forming Same
App 20220246479 - Huang; Hui-Lin ; et al. | 2022-08-04 |
Semiconductor method and device
Grant 11,367,660 - Yen , et al. June 21, 2 | 2022-06-21 |
Semiconductor Device and Method for Manufacture
App 20220130979 - Chang; Chia-Ao ; et al. | 2022-04-28 |
Method of epitaxy and semiconductor device
Grant 11,264,237 - Chin , et al. March 1, 2 | 2022-03-01 |
Semiconductor Device and Method of Manufacture
App 20220059655 - Ting; Heng-Wen ; et al. | 2022-02-24 |
Method of making semiconductor device having first and second epitaxial materials
Grant 11,257,951 - Su , et al. February 22, 2 | 2022-02-22 |
Epitaxy Regions with Large Landing Areas for Contact Plugs
App 20220028856 - Tai; Jung-Chi ; et al. | 2022-01-27 |
Semiconductor device and method
Grant 11,211,470 - Chen , et al. December 28, 2 | 2021-12-28 |
FinFET having a non-faceted top surface portion for a source/drain region
Grant 11,205,713 - Lin , et al. December 21, 2 | 2021-12-21 |
Method Of Fabricating A Source/drain Recess In A Semiconductor Device
App 20210391465 - PENG; Eric ; et al. | 2021-12-16 |
Semiconductor Device and Method
App 20210366715 - Ma; Ta-Chun ; et al. | 2021-11-25 |
Semiconductor device and method of manufacture
Grant 11,171,209 - Ting , et al. November 9, 2 | 2021-11-09 |
Semiconductor device convex source/drain region
Grant 11,127,637 - Lin , et al. September 21, 2 | 2021-09-21 |
V-shape recess profile for embedded source/drain epitaxy
Grant 11,121,255 - Li , et al. September 14, 2 | 2021-09-14 |
Method Of Forming Semiconductor Device
App 20210273101 - LEE; Wei-Yang ; et al. | 2021-09-02 |
Source/drain recess in a semiconductor device
Grant 11,107,921 - Peng , et al. August 31, 2 | 2021-08-31 |
FETS and Methods of Forming FETS
App 20210265195 - Lee; Yen-Ru ; et al. | 2021-08-26 |
Semiconductor Device And Method
App 20210265350 - Chin; Chih-Yun ; et al. | 2021-08-26 |
Semiconductor device and method
Grant 11,087,987 - Ma , et al. August 10, 2 | 2021-08-10 |
Interfacial Layer Between Fin and Source/Drain Region
App 20210193831 - Chin; Chih-Yun ; et al. | 2021-06-24 |
MOS Devices Having Epitaxy Regions with Reduced Facets
App 20210184037 - Sung; Hsueh-Chang ; et al. | 2021-06-17 |
Elongated source/drain region structure in finFET device
Grant 11,011,634 - Lee , et al. May 18, 2 | 2021-05-18 |
FETS and methods of forming FETS
Grant 11,004,724 - Lee , et al. May 11, 2 | 2021-05-11 |
Semiconductor device convex source/drain region
Grant 11,004,745 - Lin , et al. May 11, 2 | 2021-05-11 |
Semiconductor device and manufacturing method thereof
Grant 10,991,795 - Lee , et al. April 27, 2 | 2021-04-27 |
Semiconductor Device and Method
App 20210119013 - Chen; Meng-Ku ; et al. | 2021-04-22 |
Doping Profile For Strained Source/drain Region
App 20210119048 - Sung; Hsueh-Chang ; et al. | 2021-04-22 |
Semiconductor Method and Device
App 20210098308 - Yen; Cheng-Hsiung ; et al. | 2021-04-01 |
Supportive Layer in Source/Drains of FinFET Devices
App 20210083052 - Tai; Jung-Chi ; et al. | 2021-03-18 |
Method Of Making Semiconductor Device Having First And Second Epitaxial Materials
App 20210083115 - SU; Lilly ; et al. | 2021-03-18 |
Interfacial layer between fin and source/drain region
Grant 10,944,005 - Chin , et al. March 9, 2 | 2021-03-09 |
MOS devices having epitaxy regions with reduced facets
Grant 10,916,656 - Sung , et al. February 9, 2 | 2021-02-09 |
Semiconductor device and method of forming same
Grant 10,879,128 - Kwok , et al. December 29, 2 | 2020-12-29 |
Semiconductor method and device
Grant 10,867,862 - Yen , et al. December 15, 2 | 2020-12-15 |
Fin field-effect transistor device and method of forming the same
Grant 10,867,861 - Lin , et al. December 15, 2 | 2020-12-15 |
Doping profile for strained source/drain region
Grant 10,861,971 - Sung , et al. December 8, 2 | 2020-12-08 |
Semiconductor device source/drain region with arsenic-containing barrier region
Grant 10,861,935 - Kuo , et al. December 8, 2 | 2020-12-08 |
Method For Fabricating Semiconductor Device
App 20200381539 - LEE; Yen-Ru ; et al. | 2020-12-03 |
Semiconductor device having first and second epitaxial materials
Grant 10,854,748 - SU , et al. December 1, 2 | 2020-12-01 |
Method to reduce etch variation using ion implantation
Grant 10,854,729 - Wang , et al. December 1, 2 | 2020-12-01 |
FinFET device and method for fabricating the same
Grant 10,854,602 - Li , et al. December 1, 2 | 2020-12-01 |
Supportive layer in source/drains of FinFET devices
Grant 10,854,715 - Tai , et al. December 1, 2 | 2020-12-01 |
MOS Devices Having Epitaxy Regions with Reduced Facets
App 20200357921 - Sung; Hsueh-Chang ; et al. | 2020-11-12 |
Source and Drain Stressors with Recessed Top Surfaces
App 20200343381 - Li; Kun-Mu ; et al. | 2020-10-29 |
MOS devices with non-uniform p-type impurity profile
Grant 10,797,173 - Sung , et al. October 6, 2 | 2020-10-06 |
Source/drain recess in a semiconductor device
Grant 10,784,375 - Peng , et al. Sept | 2020-09-22 |
V-shape recess profile for embedded source/drain epitaxy
Grant 10,763,366 - Li , et al. Sep | 2020-09-01 |
V-Shape Recess Profile for Embedded Source/Drain Epitaxy
App 20200273993 - Li; Chii-Horng ; et al. | 2020-08-27 |
Semiconductor device and method for fabricating the same
Grant 10,749,013 - Lee , et al. A | 2020-08-18 |
MOS devices having epitaxy regions with reduced facets
Grant 10,734,520 - Sung , et al. | 2020-08-04 |
Source and drain stressors with recessed top surfaces
Grant 10,727,342 - Li , et al. | 2020-07-28 |
V-shape recess profile for embedded source/drain epitaxy
Grant 10,651,309 - Li , et al. | 2020-05-12 |
Semiconductor Device and Method
App 20200135467 - Ma; Ta-Chun ; et al. | 2020-04-30 |
Semiconductor Device Convex Source/Drain Region
App 20200111712 - Lin; Tzu-Ching ; et al. | 2020-04-09 |
Semiconductor Device Convex Source/Drain Region
App 20200111711 - Lin; Tzu-Ching ; et al. | 2020-04-09 |
Method of Epitaxy and Semiconductor Device
App 20200105526 - Chin; Chih-Yun ; et al. | 2020-04-02 |
Fin Field-effect Transistor Device And Method Of Forming The Same
App 20200105606 - Lin; Tzu-Ching ; et al. | 2020-04-02 |
Semiconductor Device and Method of Manufacture
App 20200105876 - Ting; Heng-Wen ; et al. | 2020-04-02 |
Source/drain Recess In A Semiconductor Device
App 20200098919 - PENG; Eric ; et al. | 2020-03-26 |
Semiconductor Method and Device
App 20200075729 - Yen; Cheng-Hsiung ; et al. | 2020-03-05 |
Semiconductor Device and Method of Forming Same
App 20200075423 - Kwok; Tsz-Mei ; et al. | 2020-03-05 |
FETS and Methods of Forming FETS
App 20200052098 - Lin; Tzu-Ching ; et al. | 2020-02-13 |
V-Shape Recess Profile for Embedded Source/Drain Epitaxy
App 20200052121 - Li; Chii-Horng ; et al. | 2020-02-13 |
Mos Devices Having Epitaxy Regions With Reduced Facets
App 20200035831 - Sung; Hsueh-Chang ; et al. | 2020-01-30 |
Wafer Susceptor with Improved Thermal Characteristics
App 20200032415 - Lin; Yi-Hung ; et al. | 2020-01-30 |
Semiconductor Device And Manufacturing Method Thereof
App 20200035784 - Lee; Yen-Ru ; et al. | 2020-01-30 |
Method To Reduce Etch Variation Using Ion Implantation
App 20200020784 - Wang; Tsan-Chun ; et al. | 2020-01-16 |
Semiconductor Device and Method
App 20200006533 - Tsai; Ji-Yin ; et al. | 2020-01-02 |
Interfacial Layer Between Fin and Source/Drain Region
App 20200006548 - Chin; Chih-Yun ; et al. | 2020-01-02 |
Semiconductor Device Convex Source/Drain Region
App 20190393095 - Lin; Tzu-Ching ; et al. | 2019-12-26 |
Semiconductor device convex source/drain region
Grant 10,510,607 - Lin , et al. Dec | 2019-12-17 |
Interfacial Layer Between Fin and Source/Drain Region
App 20190378920 - Chin; Chih-Yun ; et al. | 2019-12-12 |
Method to reduce etch variation using ion implantation
Grant 10,490,648 - Wang , et al. Nov | 2019-11-26 |
Semiconductor Device Source/Drain Region with Arsenic-Containing Barrier Region
App 20190355816 - Kuo; Chien-I ; et al. | 2019-11-21 |
Interfacial layer between fin and source/drain region
Grant 10,483,396 - Chin , et al. Nov | 2019-11-19 |
MOS devices having epitaxy regions with reduced facets
Grant 10,475,926 - Sung , et al. Nov | 2019-11-12 |
Semiconductor device and manufacturing method thereof
Grant 10,468,482 - Lee , et al. No | 2019-11-05 |
FETS and methods of forming FETS
Grant 10,453,943 - Lin , et al. Oc | 2019-10-22 |
Supportive Layer in Source/Drains of FinFET Devices
App 20190319098 - TAI; Roger ; et al. | 2019-10-17 |
Wafer susceptor with improved thermal characteristics
Grant 10,435,811 - Lin , et al. O | 2019-10-08 |
FETS and Methods of Forming FETS
App 20190252240 - Lee; Yen-Ru ; et al. | 2019-08-15 |
Semiconductor device source/drain region with arsenic-containing barrier region
Grant 10,374,038 - Kuo , et al. | 2019-08-06 |
Semiconductor device structure and method for forming the same
Grant 10,340,190 - Lu , et al. | 2019-07-02 |
Semiconductor Device Source/drain Region With Arsenic-containing Barrier Region
App 20190165100 - KUO; Chien-I ; et al. | 2019-05-30 |
Semiconductor Device Structure And Method For Forming The Same
App 20190164835 - LU; Wei-Hao ; et al. | 2019-05-30 |
Finfet Device And Method For Fabricating The Same
App 20190164964 - LI; Chii-Horng ; et al. | 2019-05-30 |
FETS and methods of forming FETS
Grant 10,269,618 - Lee , et al. | 2019-04-23 |
MOS Devices with Non-Uniform P-type Impurity Profile
App 20190115470A1 - | 2019-04-18 |
FETs and Methods of Forming FETs
App 20190109217 - Lin; Tzu-Ching ; et al. | 2019-04-11 |
Semiconductor Device And Method For Fabricating The Same
App 20190051737 - LEE; Yen-Ru ; et al. | 2019-02-14 |
Source And Drain Stressors With Recessed Top Surfaces
App 20190035931 - Li; Kun-Mu ; et al. | 2019-01-31 |
MOS Devices Having Epitaxy Regions with Reduced Facets
App 20190013405 - Sung; Hsueh-Chang ; et al. | 2019-01-10 |
FinFET device and method for fabricating the same
Grant 10,177,143 - Li , et al. J | 2019-01-08 |
Contact resistance control in epitaxial structures of finFET
Grant 10,170,370 - Cheng , et al. J | 2019-01-01 |
Semiconductor device and manufacturing method thereof
Grant 10,164,097 - Lee , et al. Dec | 2018-12-25 |
MOS devices with non-uniform p-type impurity profile
Grant 10,158,016 - Sung , et al. Dec | 2018-12-18 |
V-shape Recess Profile For Embedded Source/drain Epitaxy
App 20180337283 - Li; Chii-Horng ; et al. | 2018-11-22 |
Contact Resistance Control In Epitaxial Structures Of Finfet
App 20180315660 - CHENG; Cheng-Wen ; et al. | 2018-11-01 |
Source/drain Recess In A Semiconductor Device
App 20180315855 - PENG; Eric ; et al. | 2018-11-01 |
FinFET device and method for fabricating the same
Grant 10,103,249 - Lee , et al. October 16, 2 | 2018-10-16 |
Transistor structure including epitaxial channel layers and raised source/drain regions
Grant 10,103,064 - Li , et al. October 16, 2 | 2018-10-16 |
Source and drain stressors with recessed top surfaces
Grant 10,084,089 - Li , et al. September 25, 2 | 2018-09-25 |
MOS devices having epitaxy regions with reduced facets
Grant 10,062,781 - Sung , et al. August 28, 2 | 2018-08-28 |
V-shape recess profile for embedded source/drain epitaxy
Grant 10,038,095 - Li , et al. July 31, 2 | 2018-07-31 |
Bottle-neck recess in a semiconductor device
Grant 10,020,397 - Peng , et al. July 10, 2 | 2018-07-10 |
Modulating germanium percentage in MOS devices
Grant 10,014,411 - Kwok , et al. July 3, 2 | 2018-07-03 |
Semiconductor Device And Manufacturing Method Thereof
App 20180175144 - Lee; Yen-Ru ; et al. | 2018-06-21 |
Transistor strain-inducing scheme
Grant 9,991,364 - Kwok , et al. June 5, 2 | 2018-06-05 |
Elongated Source/drain Region Structure In Finfet Device
App 20180151731 - Lee; Wei-Yang ; et al. | 2018-05-31 |
Fets And Methods Of Forming Fets
App 20180151703 - Lin; Tzu-Ching ; et al. | 2018-05-31 |
Honeycomb heaters for integrated circuit manufacturing
Grant 9,960,059 - Lin , et al. May 1, 2 | 2018-05-01 |
Contact resistance control in epitaxial structures of finFET
Grant 9,953,875 - Cheng , et al. April 24, 2 | 2018-04-24 |
Semiconductor Device Having First And Second Epitaxial Materials
App 20180108777 - SU; Lilly ; et al. | 2018-04-19 |
FETS and Methods of Forming FETS
App 20180082883 - Lee; Yen-Ru ; et al. | 2018-03-22 |
MOS Devices Having Epitaxy Regions with Reduced Facets
App 20180069123 - Sung; Hsueh-Chang ; et al. | 2018-03-08 |
Semiconductor device and manufacturing method thereof
Grant 9,905,641 - Lee , et al. February 27, 2 | 2018-02-27 |
V-shaped epitaxially formed semiconductor layer
Grant 9,905,646 - Kwok , et al. February 27, 2 | 2018-02-27 |
Source and Drain Stressors with Recessed Top Surfaces
App 20180012997 - Li; Kun-Mu ; et al. | 2018-01-11 |
MOS devices having epitaxy regions with reduced facets
Grant 9,853,155 - Li , et al. December 26, 2 | 2017-12-26 |
Semiconductor device and fabrication method thereof
Grant 9,842,930 - Su , et al. December 12, 2 | 2017-12-12 |
Semiconductor device having NFET structure and method of fabricating the same
Grant 9,831,343 - Li , et al. November 28, 2 | 2017-11-28 |
FETS and methods of forming FETs
Grant 9,831,116 - Lee , et al. November 28, 2 | 2017-11-28 |
Method for making source and drain regions of a MOSFET with embedded germanium-containing layers having different germanium concentration
Grant 9,806,171 - Kwok , et al. October 31, 2 | 2017-10-31 |
Transistor Strain-inducing Scheme
App 20170271478 - Kwok; Tsz-Mei ; et al. | 2017-09-21 |
MOS Devices Having Epitaxy Regions with Reduced Facets
App 20170263771 - Li; Chii-Horng ; et al. | 2017-09-14 |
Source and drain stressors with recessed top surfaces
Grant 9,755,077 - Li , et al. September 5, 2 | 2017-09-05 |
Doping Profile For Strained Source/drain Region
App 20170243975 - Sung; Hsueh-Chang ; et al. | 2017-08-24 |
Semiconductor device and fabrication method thereof
Grant 9,728,641 - Lee , et al. August 8, 2 | 2017-08-08 |
V-Shape Recess Profile for Embedded Source/Drain Epitaxy
App 20170222053 - Li; Chii-Horng ; et al. | 2017-08-03 |
V-Shaped Epitaxially Formed Semiconductor Layer
App 20170194434 - KWOK; TSZ-MEI ; et al. | 2017-07-06 |
Transistor strain-inducing scheme
Grant 9,698,243 - Kwok , et al. July 4, 2 | 2017-07-04 |
Germanium profile for channel strain
Grant 9,691,898 - Sung , et al. June 27, 2 | 2017-06-27 |
MOS Devices with Non-Uniform P-type Impurity Profile
App 20170179287 - Sung; Hsueh-Chang ; et al. | 2017-06-22 |
Source and Drain Stressors with Recessed Top Surfaces
App 20170170319 - Li; Kun-Mu ; et al. | 2017-06-15 |
MOS devices having epitaxy regions with reduced facets
Grant 9,666,686 - Li , et al. May 30, 2 | 2017-05-30 |
Selective etching in the formation of epitaxy regions in MOS devices
Grant 9,653,574 - Cheng , et al. May 16, 2 | 2017-05-16 |
Finfet Device And Method For Fabricating The Same
App 20170125410 - LI; Chii-Horng ; et al. | 2017-05-04 |
Wafer Susceptor with Improved Thermal Characteristics
App 20170088976 - Lin; Yi-Hung ; et al. | 2017-03-30 |
MOS devices with non-uniform P-type impurity profile
Grant 9,601,619 - Sung , et al. March 21, 2 | 2017-03-21 |
V-shaped epitaxially formed semiconductor layer
Grant 9,601,574 - Kwok , et al. March 21, 2 | 2017-03-21 |
Finfet Device And Method For Fabricating The Same
App 20170077228 - LEE; Yen-Ru ; et al. | 2017-03-16 |
Semiconductor Device And Manufacturing Method Thereof
App 20170077222 - LEE; Yen-Ru ; et al. | 2017-03-16 |
Semiconductor Device And Manufacturing Method Thereof
App 20170077300 - LEE; Yen-Ru ; et al. | 2017-03-16 |
Fets And Methods Of Forming Fets
App 20170076973 - Lee; Yen-Ru ; et al. | 2017-03-16 |
Source and drain stressors with recessed top surfaces
Grant 9,583,483 - Li , et al. February 28, 2 | 2017-02-28 |
Wafer susceptor with improved thermal characteristics
Grant 9,517,539 - Lin , et al. December 13, 2 | 2016-12-13 |
Semiconductor Device And Fabrication Method Thereof
App 20160336448 - LEE; Yen-Ru ; et al. | 2016-11-17 |
Semiconductor Device And Fabrication Method Thereof
App 20160322499 - SU; Lilly ; et al. | 2016-11-03 |
Structure and method for semiconductor device
Grant 9,484,265 - Lee , et al. November 1, 2 | 2016-11-01 |
Modulating Germanium Percentage in MOS Devices
App 20160254381 - Kwok; Tsz-Mei ; et al. | 2016-09-01 |
MOS Device Having Source and Drain Regions With Embedded Germanium-Containing Diffusion Barrier
App 20160254364 - Kwok; Tsz-Mei ; et al. | 2016-09-01 |
Reducing variation by using combination epitaxy growth
Grant 9,425,287 - Cheng , et al. August 23, 2 | 2016-08-23 |
Semiconductor device and fabrication method thereof
Grant 9,412,868 - Lee , et al. August 9, 2 | 2016-08-09 |
Semiconductor device and fabrication method thereof
Grant 9,401,426 - Su , et al. July 26, 2 | 2016-07-26 |
V-Shaped Epitaxially Formed Semiconductor Layer
App 20160190250 - Kwok; Tsz-Mei ; et al. | 2016-06-30 |
Structure and Method for Semiconductor Device
App 20160190017 - Lee; Yi-Jing ; et al. | 2016-06-30 |
Method To Reduce Etch Variation Using Ion Implantation
App 20160172466 - Wang; Tsan-Chun ; et al. | 2016-06-16 |
Selective Etching in the Formation of Epitaxy Regions in MOS Devices
App 20160163827 - Cheng; Yu-Hung ; et al. | 2016-06-09 |
Modulating germanium percentage in MOS devices
Grant 9,362,360 - Kwok , et al. June 7, 2 | 2016-06-07 |
Transistor Strain-inducing Scheme
App 20160155819 - Kwok; Tsz-Mei ; et al. | 2016-06-02 |
Engineered source/drain region for n-Type MOSFET
Grant 9,356,136 - Lu , et al. May 31, 2 | 2016-05-31 |
MOS device having source and drain regions with embedded germanium-containing diffusion barrier
Grant 9,337,337 - Kwok , et al. May 10, 2 | 2016-05-10 |
MOS Devices Having Epitaxy Regions with Reduced Facets
App 20160087078 - Li; Chii-Horng ; et al. | 2016-03-24 |
Structure and method for semiconductor device
Grant 9,287,382 - Lee , et al. March 15, 2 | 2016-03-15 |
Transistor strain-inducing scheme
Grant 9,287,398 - Kwok , et al. March 15, 2 | 2016-03-15 |
Method to reduce etch variation using ion implantation
Grant 9,281,196 - Wang , et al. March 8, 2 | 2016-03-08 |
Wafer Susceptor with Improved Thermal Characteristics
App 20160064268 - Lin; Yi-Hung ; et al. | 2016-03-03 |
Source/drain structures and methods of forming same
Grant 9,269,777 - Lee , et al. February 23, 2 | 2016-02-23 |
Selective etching in the formation of epitaxy regions in MOS devices
Grant 9,263,339 - Cheng , et al. February 16, 2 | 2016-02-16 |
Source/Drain Structures and Methods of Forming Same
App 20160027877 - Lee; Yi-Jing ; et al. | 2016-01-28 |
MOS devices having epitaxy regions with reduced facets
Grant 9,209,175 - Sung , et al. December 8, 2 | 2015-12-08 |
Transistor Structure Including Epitaxial Channel Layers And Raised Source/drain Regions
App 20150349065 - Li; Kun-Mu ; et al. | 2015-12-03 |
Bottle-neck Recess In A Semiconductor Device
App 20150270397 - Peng; Eric ; et al. | 2015-09-24 |
Transistor Strain-Inducing Scheme
App 20150236157 - Kwok; Tsz-Mei ; et al. | 2015-08-20 |
Modulating Germanium Percentage in MOS Devices
App 20150228724 - Kwok; Tsz-Mei ; et al. | 2015-08-13 |
Method to Reduce Etch Variation Using Ion Implantation
App 20150187927 - Wang; Tsan-Chun ; et al. | 2015-07-02 |
Germanium Profile for Channel Strain
App 20150179796 - Sung; Hsueh-Chang ; et al. | 2015-06-25 |
Performing enhanced cleaning in the formation of MOS devices
Grant 9,064,688 - Cheng , et al. June 23, 2 | 2015-06-23 |
Bottle-neck recess in a semiconductor device
Grant 9,054,130 - Peng , et al. June 9, 2 | 2015-06-09 |
Method of temperature determination for deposition reactors
Grant 9,011,599 - Lu , et al. April 21, 2 | 2015-04-21 |
Modulating germanium percentage in MOS devices
Grant 9,012,964 - Kwok , et al. April 21, 2 | 2015-04-21 |
Semiconductor Device And Fabrication Method Thereof
App 20150091103 - SU; Lilly ; et al. | 2015-04-02 |
Source and Drain Stressors with Recessed Top Surfaces
App 20150061024 - Li; Kun-Mu ; et al. | 2015-03-05 |
Germanium Barrier Embedded in MOS Devices
App 20150048417 - Kwok; Tsz-Mei ; et al. | 2015-02-19 |
Modulating Germanium Percentage in MOS Devices
App 20150041852 - Kwok; Tsz-Mei ; et al. | 2015-02-12 |
Methods of manufacturing strained semiconductor devices with facets
Grant 8,946,060 - Cheng , et al. February 3, 2 | 2015-02-03 |
MOS Devices with Non-Uniform P-type Impurity Profile
App 20150021688 - Sung; Hsueh-Chang ; et al. | 2015-01-22 |
MOS Devices Having Epitaxy Regions with Reduced Facets
App 20150021696 - Sung; Hsueh-Chang ; et al. | 2015-01-22 |
Semiconductor device and fabrication method thereof
Grant 8,927,374 - Su , et al. January 6, 2 | 2015-01-06 |
Semiconductor Device And Fabrication Method Thereof
App 20140367768 - LEE; Yen-Ru ; et al. | 2014-12-18 |
Reducing Variation by Using Combination Epitaxy Growth
App 20140342522 - Cheng; Yu-Hung ; et al. | 2014-11-20 |
Methods for forming MOS devices with raised source/drain regions
Grant 8,889,501 - Chuang , et al. November 18, 2 | 2014-11-18 |
Semiconductor device and fabrication method thereof
Grant 8,835,267 - Lee , et al. September 16, 2 | 2014-09-16 |
Engineered Source/Drain Region for N-Type MOSFET
App 20140252468 - Lu; Wei-Yuan ; et al. | 2014-09-11 |
Reducing variation by using combination epitaxy growth
Grant 8,828,850 - Cheng , et al. September 9, 2 | 2014-09-09 |
Integrating the formation of I/O and core MOS devices with MOS capacitors and resistors
Grant 8,728,900 - Chuang , et al. May 20, 2 | 2014-05-20 |
Methods for Forming MOS Devices with Raised Source/Drain Regions
App 20130323893 - Chuang; Harry-Hak-Lay ; et al. | 2013-12-05 |
Honey Cone Heaters for Integrated Circuit Manufacturing
App 20130256292 - Lin; Yi-Hung ; et al. | 2013-10-03 |
Performing Enhanced Cleaning in the Formation of MOS Devices
App 20130252392 - Cheng; Yu-Hung ; et al. | 2013-09-26 |
Strained Semiconductor Device With Facets
App 20130244389 - CHENG; Yu-Hung ; et al. | 2013-09-19 |
Method for fabricating a semiconductor device
Grant 8,530,316 - Cheng , et al. September 10, 2 | 2013-09-10 |
Strained semiconductor device with facets
Grant 8,455,930 - Cheng , et al. June 4, 2 | 2013-06-04 |
Method of fabricating a sealing structure for high-k metal gate
Grant 8,450,161 - Chen , et al. May 28, 2 | 2013-05-28 |
Method For Fabricating A Semiconductor Device
App 20130122675 - CHENG; Yu-Hung ; et al. | 2013-05-16 |
Semiconductor Device And Fabrication Method Thereof
App 20130084682 - LEE; Yen-Ru ; et al. | 2013-04-04 |
Semiconductor Device And Fabrication Method Thereof
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Method for fabricating a semiconductor device
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Integrating the Formation of I/O and Core MOS Devices with MOS Capacitors and Resistors
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Integrating the formation of I/O and core MOS devices with MOS capacitors and resistors
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Sealing Structure For High-k Metal Gate And Method Of Making
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Semiconductor Device And Fabrication Method Thereof
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Sealing structure for high-K metal gate
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Method Of Temperature Determination For Deposition Reactors
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Selective Etching in the Formation of Epitaxy Regions in MOS Devices
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Reducing Variation by Using Combination Epitaxy Growth
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Method For Fabricating A Semiconductor Device
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Bottle-neck Recess In A Semiconductor Device
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Dual Gate Structure On A Same Chip For High-k Metal Gate Technology
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Sealing Structure For High-k Metal Gate And Method Of Making
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Integrating the Formation of I/O and Core MOS Devices with MOS Capacitors and Resistors
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Semiconductor device with discontinuous CESL structure
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Semiconductor device with discontinuous CESL structure
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