| Patent | Date |
|---|
Method For Forming A High-voltage Metal-oxide-semiconductor Transistor Device
App 20220285522 - Lee; Zhi-Cheng ; et al. | 2022-09-08 |
Method for forming a high-voltage metal-oxide-semiconductor transistor device
Grant 11,380,777 - Lee , et al. July 5, 2 | 2022-07-05 |
Method For Forming A High-voltage Metal-oxide-semiconductor Transistor Device
App 20220165864 - Lee; Zhi-Cheng ; et al. | 2022-05-26 |
High Voltage Transistor Structure And Method Of Fabricating The Same
App 20220123121 - Lee; Zhi-Cheng ; et al. | 2022-04-21 |
High voltage transistor structure and method of fabricating the same
Grant 11,251,279 - Lee , et al. February 15, 2 | 2022-02-15 |
HEMT and method of adjusting electron density of 2DEG
Grant 11,239,327 - Lee , et al. February 1, 2 | 2022-02-01 |
High Voltage Transistor Structure And Method Of Fabricating The Same
App 20220013648 - Lee; Zhi-Cheng ; et al. | 2022-01-13 |
Method Of Fabricating Metal Gate Transistor
App 20210376121 - Lee; Zhi-Cheng ; et al. | 2021-12-02 |
High Electron Mobility Transistor And Method For Fabricating The Same
App 20210336044 - Lee; Kai-Lin ; et al. | 2021-10-28 |
Method of fabricating metal gate transistor
Grant 11,127,838 - Lee , et al. September 21, 2 | 2021-09-21 |
High electron mobility transistor and method for fabricating the same
Grant 11,088,271 - Lee , et al. August 10, 2 | 2021-08-10 |
Semiconductor device and method for fabricating the same
Grant 11,011,430 - Lee , et al. May 18, 2 | 2021-05-18 |
Method Of Fabricating Metal Gate Transistor
App 20210134981 - Lee; Zhi-Cheng ; et al. | 2021-05-06 |
High Electron Mobility Transistor And Method For Fabricating The Same
App 20210134993 - Lee; Kai-Lin ; et al. | 2021-05-06 |
Semiconductor Process
App 20210050441 - Lee; Zhi-Cheng ; et al. | 2021-02-18 |
Hemt And Method Of Adjusting Electron Density Of 2deg
App 20200411649 - Lee; Kai-Lin ; et al. | 2020-12-31 |
Semiconductor structure and process thereof
Grant 10,861,974 - Lee , et al. December 8, 2 | 2020-12-08 |
Semiconductor Structure And Process Thereof
App 20200295176 - Lee; Zhi-Cheng ; et al. | 2020-09-17 |
Semiconductor device
Grant 10,756,209 - Lee , et al. A | 2020-08-25 |
Semiconductor Device
App 20200220011 - Lee; Zhi-Cheng ; et al. | 2020-07-09 |
Semiconductor Device And Method For Fabricating The Same
App 20200135582 - Lee; Zhi-Cheng ; et al. | 2020-04-30 |
Fabricating method of fin structure with tensile stress and complementary FinFET structure
Grant 10,629,734 - Lee , et al. | 2020-04-21 |
Semiconductor device and fabrication method thereof
Grant 10,629,728 - Lee , et al. | 2020-04-21 |
Semiconductor device and method for fabricating the same
Grant 10,566,244 - Lee , et al. Feb | 2020-02-18 |
Semiconductor Device And Method For Fabricating The Same
App 20200006153 - Lee; Zhi-Cheng ; et al. | 2020-01-02 |
Fabricating Method Of Fin Structure With Tensile Stress And Complementary Finfet Structure
App 20190172949 - Lee; Kai-Lin ; et al. | 2019-06-06 |
Fabricating method of fin structure with tensile stress and complementary FinFET structure
Grant 10,229,995 - Lee , et al. | 2019-03-12 |
Fabricating Method Of Fin Structure With Tensile Stress And Complementary Finfet Structure
App 20190027602 - Lee; Kai-Lin ; et al. | 2019-01-24 |
Complementary metal oxide semiconductor device and method of forming the same
Grant 10,103,265 - Lee , et al. October 16, 2 | 2018-10-16 |
Semiconductor device and method of forming the same
Grant 10,014,406 - Lee , et al. July 3, 2 | 2018-07-03 |
Finfet With Epitaxial Layer Having Octagonal Cross-section
App 20180166574 - Lee; Kai-Lin ; et al. | 2018-06-14 |
Semiconductor Device And Method Of Forming The Same
App 20180012992 - Lee; Zhi-Cheng ; et al. | 2018-01-11 |
FinFET having a fin and a V-shaped epitaxial layer formed on the top surface of the fin and method for fabricating the same
Grant 9,640,661 - Lee , et al. May 2, 2 | 2017-05-02 |
Method for fabricating semiconductor device
Grant 9,490,342 - Lai , et al. November 8, 2 | 2016-11-08 |
Oxygen treatment of replacement work-function metals in CMOS transistor gates
Grant 9,384,962 - Hwang , et al. July 5, 2 | 2016-07-05 |
Semiconductor Device With Oxygen-containing Metal Gates
App 20140339652 - Hwang; Guang-Yaw ; et al. | 2014-11-20 |
Method of manufacturing semiconductor device having metal gates
Grant 8,802,524 - Liao , et al. August 12, 2 | 2014-08-12 |
Method of forming metal gate structure
Grant 8,492,259 - Hsu , et al. July 23, 2 | 2013-07-23 |
Method of selectively removing patterned hard mask
Grant 8,486,842 - Hsu , et al. July 16, 2 | 2013-07-16 |
Method For Fabricating Semiconductor Device
App 20120322218 - LAI; Chien-Ming ; et al. | 2012-12-20 |
Metal Gate And Fabrication Method Thereof
App 20120319179 - Huang; Hsin-Fu ; et al. | 2012-12-20 |
Method Of Forming Metal Gate Structure
App 20120309185 - HSU; Che-Hua ; et al. | 2012-12-06 |
Metal Gate and Fabricating Method Thereof
App 20120256276 - Hwang; Guang-Yaw ; et al. | 2012-10-11 |
Method of Manufacturing Semiconductor Device Having Metal Gates
App 20120244669 - Liao; Po-Jui ; et al. | 2012-09-27 |
Method of forming metal gate structure and method of forming metal gate transistor
Grant 8,268,712 - Hsu , et al. September 18, 2 | 2012-09-18 |
Method for removing photoresist
Grant 8,252,515 - Chien , et al. August 28, 2 | 2012-08-28 |
Removing method of a hard mask
Grant 8,232,152 - Hsu , et al. July 31, 2 | 2012-07-31 |
Method of fabricating a semiconductor structure
App 20120142157 - Chen; Cheng-Guo ; et al. | 2012-06-07 |
Method Of Selectively Removing Patterned Hard Mask
App 20120088368 - Hsu; Che-Hua ; et al. | 2012-04-12 |
Removing Method Of A Hard Mask
App 20120070952 - HSU; Che-Hua ; et al. | 2012-03-22 |
Method Of Forming Metal Gate Structure And Method Of Forming Metal Gate Transistor
App 20110294274 - Hsu; Che-Hua ; et al. | 2011-12-01 |
Method of fabricating efuse structure, resistor sturcture and transistor sturcture
Grant 8,003,461 - Hsu , et al. August 23, 2 | 2011-08-23 |
Method Of Fabricating Efuse Structure, Resistor Sturcture And Transistor Sturcture
App 20110189827 - Hsu; Che-Hua ; et al. | 2011-08-04 |
| 