Lee; Wei-Yang

Patent Applications and Registrations

Patent applications and USPTO patent grants for Lee; Wei-Yang.The latest application filed is for "semiconductor devices with enhanced carrier mobility".

Company Profile

77.91.127

Lee; Wei-Yang - Taipei City TW
Lee; Wei-Yang - Taipei TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor Devices With Enhanced Carrier Mobility App 20220310840 - Li; Ming-Shuan ; et al.	2022-09-29
Nano-fet Semiconductor Device And Method Of Forming App 20220310816 - Wong; I-Hsieh ; et al.	2022-09-29
Air gap formation between gate spacer and epitaxy structure Grant 11,456,295 - Lai , et al. September 27, 2	2022-09-27
Integrated circuit structure with backside dielectric layer having air gap Grant 11,450,559 - Chang , et al. September 20, 2	2022-09-20
Inner spacer liner Grant 11,444,178 - Yin , et al. September 13, 2	2022-09-13
Backside contact with air spacer Grant 11,444,162 - Lee , et al. September 13, 2	2022-09-13
Semiconductor Device with Backside Contact and Methods of Forming Such App 20220285510 - Chen; Ting-Yeh ; et al.	2022-09-08
Source/drain Contact With Low-k Contact Etch Stop Layer And Method Of Fabricating Thereof App 20220285513 - Chen; Ting-Yeh ; et al.	2022-09-08
Semiconductor Devices With Modified Source/Drain Feature And Methods Thereof App 20220285561 - Lai; Wei-Jen ; et al.	2022-09-08
Semiconductor Structure With Gate-all-around Devices And Stacked Finfet Devices App 20220262683 - Chu; Feng-Ching ; et al.	2022-08-18
Semiconductor devices including backside vias and methods of forming the same Grant 11,417,767 - Chang , et al. August 16, 2	2022-08-16
Backside Contact With Air Spacer App 20220238659 - Lee; Chen-Ming ; et al.	2022-07-28
Source/drain features Grant 11,398,553 - Lin , et al. July 26, 2	2022-07-26
Transistors with Recessed Silicon Cap and Method Forming Same App 20220223591 - Chen; Yen-Ting ; et al.	2022-07-14
Methods Of Forming Epitaxial Source/Drain Features In Semiconductor Devices App 20220223689 - Hsu; Tzu-Hsiang ; et al.	2022-07-14
Semiconductor device having nanosheet transistor and methods of fabrication thereof Grant 11,387,322 - Wang , et al. July 12, 2	2022-07-12
Method and structure for air gap inner spacer in gate-all-around devices Grant 11,374,128 - Chen , et al. June 28, 2	2022-06-28
Semiconductor device and method Grant 11,362,199 - Wong , et al. June 14, 2	2022-06-14
Method For Epitaxial Growth And Device App 20220181469 - Hsu; Tzu-Hsiang ; et al.	2022-06-09
Using a metal-containing layer as an etching stop layer and to pattern source/drain regions of a FinFET Grant 11,355,400 - Chen , et al. June 7, 2	2022-06-07
Source/drain Features App 20220165848 - Lin; Ruei-Ping ; et al.	2022-05-26
Inner Spacer Liner App 20220157969 - Yin; Jin-Mu ; et al.	2022-05-19
Semiconductor structure with gate-all-around devices and stacked FinFET devices Grant 11,328,960 - Chu , et al. May 10, 2	2022-05-10
Semiconductor Device and Method App 20220130730 - Yang; Cheng-Yu ; et al.	2022-04-28
Semiconductor Device with Leakage Current Suppression and Method for Forming the Same App 20220122893 - Lai; Bo-Yu ; et al.	2022-04-21
Transistors with recessed silicon cap and method forming same Grant 11,296,077 - Chen , et al. April 5, 2	2022-04-05
Methods of forming epitaxial source/drain features in semiconductor devices Grant 11,289,574 - Hsu , et al. March 29, 2	2022-03-29
Semiconductor Structure With Gate-all-around Devices And Stacked Finfet Devices App 20220093591 - Chu; Feng-Ching ; et al.	2022-03-24
Semiconductor Device Having Nanosheet Transistor And Methods Of Fabrication Thereof App 20220093743 - WANG; Chih-Ching ; et al.	2022-03-24
FinFET Structure with Airgap and Method of Forming the Same App 20220085185 - Yao; Chien Ning ; et al.	2022-03-17
Method for epitaxial growth and device Grant 11,257,928 - Hsu , et al. February 22, 2	2022-02-22
Source/drain features with an etch stop layer Grant 11,217,490 - Chu , et al. January 4, 2	2022-01-04
Semiconductor device and method Grant 11,217,486 - Yang , et al. January 4, 2	2022-01-04
Formation of dislocations in source and drain regions of FinFET devices Grant 11,211,455 - Tsai , et al. December 28, 2	2021-12-28
Semiconductor device and method Grant 11,205,597 - Tan , et al. December 21, 2	2021-12-21
Epitaxial Source/Drain Feature with Enlarged Lower Section Interfacing with Backside Via App 20210391421 - Chu; Feng-Ching ; et al.	2021-12-16
Semiconductor device with air-spacer Grant 11,201,228 - Lee , et al. December 14, 2	2021-12-14
Method For Forming Different Types Of Devices App 20210384198 - Chu; Feng-Ching ; et al.	2021-12-09
Methods of Forming Epitaxial Structures in Fin-Like Field Effect Transistors App 20210384081 - Chu; Feng-Ching ; et al.	2021-12-09
Semiconductor Devices And Methods Of Forming The Same App 20210376094 - Lin; Yen-Po ; et al.	2021-12-02
Integrated Circuit Device with Source/Drain Barrier App 20210376077 - Chu; Feng-Ching ; et al.	2021-12-02
Semiconductor Devices Including Backside Vias and Methods of Forming the Same App 20210376155 - Chang; Che-Lun ; et al.	2021-12-02
FinFET structure with airgap and method of forming the same Grant 11,189,706 - Yao , et al. November 30, 2	2021-11-30
Methods of reducing parasitic capacitance in multi-gate field-effect transistors Grant 11,189,705 - Wong , et al. November 30, 2	2021-11-30
Selective Gate Air Spacer Formation App 20210351277 - Yang; Chih-Hsin ; et al.	2021-11-11
Integrated Circuit Structure With Backside Dielectric Layer Having Air Gap App 20210343578 - Chang; Che-Lun ; et al.	2021-11-04
FinFET semiconductor device having source/drain contact(s) separated by airgap spacer(s) from the gate stack(s) to reduce parasitic capacitance Grant 11,152,486 - Yang , et al. October 19, 2	2021-10-19
Semiconductor Structure and Method for Semiconductor Device Fabrication with Improved Source Drain Epitaxy App 20210296498 - Lee; Wei-Yang ; et al.	2021-09-23
Method Of Forming Semiconductor Device App 20210273101 - LEE; Wei-Yang ; et al.	2021-09-02
Semiconductor Device With Epitaxial Bridge Feature And Methods Of Forming The Same App 20210273114 - Chen; Ting-Yeh ; et al.	2021-09-02
Cut EPI Process and Structures App 20210272848 - Chu; Feng-Ching ; et al.	2021-09-02
Method and Structure for Gate-All-Around Devices App 20210273103 - Chen; Shih-Chiang ; et al.	2021-09-02
Semiconductor Device with Air-Spacer App 20210273071 - Lee; Wei-Yang ; et al.	2021-09-02
Epitaxial Features Of Semiconductor Devices And Related Methods App 20210273079 - CHU; Feng-Ching ; et al.	2021-09-02
Methods of forming epitaxial structures in fin-like field effect transistors Grant 11,107,735 - Chu , et al. August 31, 2	2021-08-31
Semiconductor device and manufacturing method thereof Grant 11,107,734 - Lee , et al. August 31, 2	2021-08-31
Semiconductor Devices and Methods of Forming the Same App 20210257261 - Chu; Feng-Ching ; et al.	2021-08-19
Semiconductor Device and Method App 20210257260 - Chu; Feng-Ching ; et al.	2021-08-19
Finfet Structure With Airgap And Method Of Forming The Same App 20210249519 - Yao; Chien Ning ; et al.	2021-08-12
Integrated circuit device with source/drain barrier Grant 11,088,245 - Chu , et al. August 10, 2	2021-08-10
Method for FinFET LDD Doping App 20210242310 - Tsai; Chun Hsiung ; et al.	2021-08-05
Methods of Forming Epitaxial Source/Drain Feautures in Semiconductor Devices App 20210202699 - Hsu; Tzu-Hsiang ; et al.	2021-07-01
Semiconductor Device And Methods Of Manufacture App 20210193534 - Chen; Yen-Ting ; et al.	2021-06-24
Structure of a Fin Field Effect Transistor (FinFET) App 20210184019 - Lee; Wei-Yang ; et al.	2021-06-17
Semiconductor structure with improved source drain epitaxy Grant 11,031,498 - Lee , et al. June 8, 2	2021-06-08
Elongated source/drain region structure in finFET device Grant 11,011,634 - Lee , et al. May 18, 2	2021-05-18
Semiconductor Device with Funnel Shape Spacer and Methods of Forming The Same App 20210143069 - Yang; Cheng-Yu ; et al.	2021-05-13
Semiconductor Device and Method of Manufacture App 20210126104 - Chen; Yen-Ting ; et al.	2021-04-29
Method for FinFET LDD doping Grant 10,991,800 - Tsai , et al. April 27, 2	2021-04-27
Using a Metal-Containing Layer as an Etching Stop Layer and to Pattern Source/Drain Regions of a FinFET App 20210118744 - Chen; Yen-Ting ; et al.	2021-04-22
Air Gap Formation Between Gate Spacer And Epitaxy Structure App 20210118749 - LAI; Bo-Yu ; et al.	2021-04-22
Method For Forming Semiconductor Device Structure With Cap Layer App 20210119049 - CHU; Feng-Ching ; et al.	2021-04-22
Semiconductor Structure With Blocking Layer App 20210119037 - LI; Kun-Mu ; et al.	2021-04-22
Integrated Circuit with Sidewall Spacers for Gate Spacers App 20210111265 - Chen; Yen-Ting ; et al.	2021-04-15
Finfet Having Non-merging Epitaxially Grown Source/drains App 20210082925 - Chang; Chun Po ; et al.	2021-03-18
Structure of a fin field effect transistor (FinFET) Grant 10,937,894 - Lee , et al. March 2, 2	2021-03-02
Methods of Reducing Parasitic Capacitance in Multi-Gate Field-Effect Transistors App 20210036122 - Wong; I-Hsieh ; et al.	2021-02-04
Semiconductor Devices with Reduced Parasitic Capacitance App 20210020757 - Yang; Cheng-Yu ; et al.	2021-01-21
Dielectric Inner Spacers in Multi-Gate Field-Effect Transistors App 20200411667 - Wong; I-Hsieh ; et al.	2020-12-31
Hybrid SRAM Design with Nano-Structures App 20200411530 - Wong; I-Hsieh ; et al.	2020-12-31
Method for forming semiconductor device structure with cap layer Grant 10,879,395 - Chu , et al. December 29, 2	2020-12-29
Semiconductor component and fabricating method thereof Grant 10,872,889 - Chen , et al. December 22, 2	2020-12-22
Semiconductor Device with Funnel Shape Spacer and Methods of Forming The Same App 20200395465 - Yang; Cheng-Yu ; et al.	2020-12-17
Semiconductor device and method of manufacture Grant 10,868,130 - Chen , et al. December 15, 2	2020-12-15
Semiconductor device with funnel shape spacer and methods of forming the same Grant 10,867,870 - Yang , et al. December 15, 2	2020-12-15
Semiconductor structure with blocking layer and method for forming the same Grant 10,868,181 - Li , et al. December 15, 2	2020-12-15
Integrated Circuit Device with Source/Drain Barrier App 20200388677 - Chu; Feng-Ching ; et al.	2020-12-10
Air gap formation between gate spacer and epitaxy structure Grant 10,861,753 - Lai , et al. December 8, 2	2020-12-08
Using a metal-containing layer as an etching stop layer and to pattern source/drain regions of a FinFET Grant 10,861,749 - Chen , et al. December 8, 2	2020-12-08
Source/Drain Features with an Etch Stop Layer App 20200381310 - Chu; Feng-Ching ; et al.	2020-12-03
FinFET having non-merging epitaxially grown source/drains Grant 10,854,615 - Chang , et al. December 1, 2	2020-12-01
Integrated circuit with doped low-k sidewall spacers for gate stacks Grant 10,854,726 - Chen , et al. December 1, 2	2020-12-01
Formation of Dislocations in Source and Drain Regions of FinFET Devices App 20200350404 - Tsai; Chun Hsiung ; et al.	2020-11-05
PMOS FinFET App 20200343383 - Lee; Wei-Yang ; et al.	2020-10-29
Method of forming integrated circuit with low-k sidewall spacers for gate stacks Grant 10,770,354 - Chen , et al. Sep	2020-09-08
Integrated circuit device with source/drain barrier Grant 10,756,171 - Chu , et al. A	2020-08-25
Source/drain features with an etch stop layer Grant 10,748,820 - Chu , et al. A	2020-08-18
Formation of dislocations in source and drain regions of finFET devices Grant 10,741,642 - Tsai , et al. A	2020-08-11
Semiconductor Structure and Method for Semiconductor Device Fabrication with Improved Source Drain Epitaxy App 20200251594 - Kind Code	2020-08-06
PMOS FinFET Grant 10,714,619 - Lee , et al.	2020-07-14
Semiconductor Device and Method App 20200176591 - Wong; I-Hsieh ; et al.	2020-06-04
Method for Epitaxial Growth and Device App 20200168723 - Hsu; Tzu-Hsiang ; et al.	2020-05-28
Transistors with Recessed Silicon Cap and Method Forming Same App 20200161297 - Chen; Yen-Ting ; et al.	2020-05-21
Structure of a Fin Field Effect Transistor (FinFET) App 20200152775 - Lee; Wei-Yang ; et al.	2020-05-14
Method For Forming Semiconductor Device Structure With Cap Layer App 20200144423 - CHU; Feng-Ching ; et al.	2020-05-07
Air Gap Formation Between Gate Spacer And Epitaxy Structure App 20200135590 - LAI; Bo-Yu ; et al.	2020-04-30
Semiconductor Device And Method App 20200135574 - Yang; Cheng-Yu ; et al.	2020-04-30
Semiconductor Device and Method of Manufacture App 20200135880 - Chen; Yen-Ting ; et al.	2020-04-30
Source/Drain Features with an Etch Stop Layer App 20200126869 - Chu; Feng-Ching ; et al.	2020-04-23
Semiconductor Device with Air-Spacer App 20200127110 - Lee; Wei-Yang ; et al.	2020-04-23
Semiconductor structure and method for semiconductor device fabrication with improved source drain epitaxy Grant 10,629,736 - Lee , et al.	2020-04-21
Semiconductor Device and Method App 20200105620 - Tan; Wei-Chun ; et al.	2020-04-02
Methods of Forming Epitaxial Structures in Fin-Like Field Effect Transistors App 20200098644 - Chu; Feng-Ching ; et al.	2020-03-26
Air Spacer For A Gate Structure Of A Transistor App 20200098886 - Liu; Yi-Hsiu ; et al.	2020-03-26
Integrated Circuit with Sidewall Spacers for Gate Stacks App 20200075420 - Chen; Yen-Ting ; et al.	2020-03-05
Using a Metal-Containing Layer as an Etching Stop Layer and to Pattern Source/Drain Regions of a FinFET App 20200043804 - Chen; Yen-Ting ; et al.	2020-02-06
Semiconductor Device And Manufacturing Method Thereof App 20200027793 - LEE; Wei-Yang ; et al.	2020-01-23
Structure of a fin field effect transistor (FinFET) Grant 10,535,757 - Lee , et al. Ja	2020-01-14
Methods of Forming Metal Gate Spacer App 20200006158 - Chen; Yen-Ting ; et al.	2020-01-02
Source/drain features with an etch stop layer Grant 10,522,420 - Chu , et al. Dec	2019-12-31
Finfet semiconductor device structure with capped source drain structures Grant 10,522,680 - Chu , et al. Dec	2019-12-31
Semiconductor device with air-spacer Grant 10,522,642 - Lee , et al. Dec	2019-12-31
Methods of forming epitaxial structures in fin-like field effect transistors Grant 10,497,628 - Chu , et al. De	2019-12-03
Using a metal-containing layer as an etching stop layer and to pattern source/drain regions of a FinFET Grant 10,453,753 - Chen , et al. Oc	2019-10-22
Source/Drain Features with an Etch Stop Layer App 20190311957 - Chu; Feng-Ching ; et al.	2019-10-10
Finfet Having Non-merging Epitaxially Grown Source/drains App 20190304984 - Chang; Chun Po ; et al.	2019-10-03
Method for FinFET LDD Doping App 20190288067 - Tsai; Chun Hsiung ; et al.	2019-09-19
Source/drain features with an etch stop layer Grant 10,403,551 - Chu , et al. Sep	2019-09-03
Method for FinFET LDD doping Grant 10,396,156 - Tsai , et al. A	2019-08-27
Buffer layer on semiconductor devices Grant 10,374,055 - Hou , et al.	2019-08-06
Method for FinFET LDD Doping App 20190237543 - Tsai; Chun Hsiung ; et al.	2019-08-01
Structure Of A Fin Field Effect Transistor (finfet) App 20190198646 - Lee; Wei-Yang ; et al.	2019-06-27
Methods of Forming Epitaxial Structures in Fin-Like Field Effect Transistors App 20190157162 - Chu; Feng-Ching ; et al.	2019-05-23
Integrated Circuit with Sidewall Spacers for Gate Stacks App 20190148501 - Chen; Yen-Ting ; et al.	2019-05-16
Source/Drain Features with an Etch Stop Layer App 20190139836 - Chu; Feng-Ching ; et al.	2019-05-09
Integrated Circuit Device with Source/Drain Barrier App 20190131392 - Chu; Feng-Ching ; et al.	2019-05-02
Method for Semiconductor Device Fabrication with Improved Source Drain Epitaxy App 20190123200 - Lee; Wei-Yang ; et al.	2019-04-25
Formation of Dislocations in Source and Drain Regions of FinFET Devices App 20190115428 - Tsai; Chun Hsiung ; et al.	2019-04-18
Semiconductor Structure With Blocking Layer And Method For Forming The Same App 20190097006 - LI; Kun-Mu ; et al.	2019-03-28
Finfet Semiconductor Device Structure With Capped Source Drain Structures App 20190067478 - CHU; Feng-Ching ; et al.	2019-02-28
Using A Metal-containing Layer As An Etching Stop Layer And To Pattern Source/drain Regions Of A Finfet App 20190067126 - Chen; Yen-Ting ; et al.	2019-02-28
Integrated circuit device with source/drain barrier Grant 10,217,815 - Chu , et al. Feb	2019-02-26
Semiconductor structure and method for semiconductor device fabrication with improved source drain epitaxy Grant 10,158,017 - Lee , et al. Dec	2018-12-18
Low-K dielectric sidewall spacer treatment Grant 10,158,000 - Lee , et al. Dec	2018-12-18
Source/drain structure of a fin field effect transistor (FinFET) Grant 10,158,006 - Lee , et al. Dec	2018-12-18
Semiconductor device and manufacturing method thereof Grant 10,158,007 - Lee , et al. Dec	2018-12-18
Formation of dislocations in source and drain regions of FinFET devices Grant 10,153,344 - Tsai , et al. Dec	2018-12-11
PMOS Finfet App 20180337282 - Lee; Wei-Yang ; et al.	2018-11-22
PMOS FinFET Grant 10,134,902 - Lee , et al. November 20, 2	2018-11-20
PMOS FinFET App 20180175200 - Lee; Wei-Yang ; et al.	2018-06-21
Semiconductor Device with Air-Spacer App 20180166553 - Lee; Wei-Yang ; et al.	2018-06-14
Elongated Source/drain Region Structure In Finfet Device App 20180151731 - Lee; Wei-Yang ; et al.	2018-05-31
Semiconductor Component And Fabricating Method Thereof App 20180138172 - CHEN; Ting-Yeh ; et al.	2018-05-17
Semiconductor Device And Manufacturing Method Thereof App 20180102292 - LEE; Wei-Yang ; et al.	2018-04-12
Semiconductor Device And Manufacturing Method Thereof App 20180047833 - LEE; Wei-Yang ; et al.	2018-02-15
Semiconductor device and manufacturing method thereof Grant 9,865,504 - Lee , et al. January 9, 2	2018-01-09
Formation of Dislocations in Source and Drain Regions of FinFET Devices App 20180006117 - Tsai; Chun Hsiung ; et al.	2018-01-04
Method for Semiconductor Device Fabrication with Improved Source Drain Epitaxy App 20170373189 - Lee; Wei-Yang ; et al.	2017-12-28
Semiconductor device and manufacturing method thereof Grant 9,812,576 - Lee , et al. November 7, 2	2017-11-07
Formation of dislocations in source and drain regions of FinFET devices Grant 9,768,256 - Tsai , et al. September 19, 2	2017-09-19
Semiconductor Device And Manufacturing Method Thereof App 20170256639 - LEE; Wei-Yang ; et al.	2017-09-07
Semiconductor Device And Manufacturing Method Thereof App 20170256456 - LEE; Wei-Yang ; et al.	2017-09-07
Method for semiconductor device fabrication with improved source drain epitaxy Grant 9,748,389 - Lee , et al. August 29, 2	2017-08-29
FinFET and method for manufacturing the same Grant 9,741,831 - Lee , et al. August 22, 2	2017-08-22
Source/Drain Structure of Semiconductor Device App 20170110558 - Lee; Wei-Yang ; et al.	2017-04-20
Semiconductor device and manufacturing method thereof Grant 9,570,556 - Lee , et al. February 14, 2	2017-02-14
Source/drain structure of semiconductor device Grant 9,537,008 - Lee , et al. January 3, 2	2017-01-03
Formation of Dislocations in Source and Drain Regions of FinFET Devices App 20160204229 - Tsai; Chun Hsiung ; et al.	2016-07-14
Finfet And Method For Manufacturing The Same App 20160163820 - LEE; Wei-Yang ; et al.	2016-06-09
Finfet And Method Of Manufacturing The Same App 20160149040 - LEE; Wei-Yang ; et al.	2016-05-26
FinFET and method of manufacturing the same Grant 9,343,575 - Lee , et al. May 17, 2	2016-05-17
Formation of dislocations in source and drain regions of FinFET devices Grant 9,293,534 - Tsai , et al. March 22, 2	2016-03-22
FinFET and method for manufacturing the same Grant 9,287,403 - Lee , et al. March 15, 2	2016-03-15
Semiconductor substructure having elevated strain material-sidewall interface and method of making the same Grant 9,263,578 - Lee , et al. February 16, 2	2016-02-16
Method of fabricating a gate dielectric layer Grant 9,263,546 - Lee , et al. February 16, 2	2016-02-16
Source/Drain Structure of Semiconductor Device App 20150357469 - Lee; Wei-Yang ; et al.	2015-12-10
Formation of Dislocations in Source and Drain Regions of FinFET Devices App 20150270342 - Tsai; Chun Hsiung ; et al.	2015-09-24
FinFET and method of manufacturing the same Grant 9,129,988 - Lee , et al. September 8, 2	2015-09-08
Source/drain structure of semiconductor device Grant 9,112,033 - Lee , et al. August 18, 2	2015-08-18
Semiconductor Substructure Having Elevated Strain Material-sidewall Interface And Method Of Making The Same App 20150228791 - LEE; Wei-Yang ; et al.	2015-08-13
Source/Drain Structure of Semiconductor Device App 20150187943 - Lee; Wei-Yang ; et al.	2015-07-02
Low-k Dielectric Sidewall Spacer Treatment App 20150145073 - LEE; WEI-YANG ; et al.	2015-05-28
Method Of Fabricating A Gate Dielectric Layer App 20150140765 - LEE; Wei-Yang ; et al.	2015-05-21
Semiconductor substructure having elevated strain material-sidewall interface and method of making the same Grant 9,029,912 - Lee , et al. May 12, 2	2015-05-12
High temperature anneal for stress modulation Grant 8,962,477 - Chan , et al. February 24, 2	2015-02-24
Gate dielectric layer having interfacial layer and high-K dielectric over the interfacial layer Grant 8,952,458 - Lee , et al. February 10, 2	2015-02-10
Buffer Layer On Semiconductor Devices App 20140291777 - HOU; Cheng-Hao ; et al.	2014-10-02
Semiconductor Substructure Having Elevated Strain Material-sidewall Interface And Method Of Making The Same App 20140197455 - LEE; Wei-Yang ; et al.	2014-07-17
Method of forming a buffer layer Grant 8,765,603 - Hou , et al. July 1, 2	2014-07-01
Method for fabricating a gate dielectric layer Grant 8,580,698 - Lee , et al. November 12, 2	2013-11-12
Stress modulation for metal gate semiconductor device Grant 8,530,294 - Lee , et al. September 10, 2	2013-09-10
Stress Modulation For Metal Gate Semiconductor Device App 20130102142 - Lee; Wei-Yang ; et al.	2013-04-25
High Temperature Anneal For Stress Modulation App 20130040455 - CHAN; Meng-Hsuan ; et al.	2013-02-14
Buffer Layer And Method Of Forming Buffer Layer App 20130032900 - HOU; Cheng-Hao ; et al.	2013-02-07
Method of fabricating a plurality of gate structures Grant 8,334,198 - Chen , et al. December 18, 2	2012-12-18
Method of fabricating high-k/metal gate device Grant 8,334,197 - Lee , et al. December 18, 2	2012-12-18
Method Of Fabricating A Plurality Of Gate Structures App 20120264281 - CHEN; Jian-Hao ; et al.	2012-10-18
Method Of Fabricating A Gate Dielectric Layer App 20120261758 - LEE; Wei-Yang ; et al.	2012-10-18
Method to form a semiconductor device having gate dielectric layers of varying thickness Grant 8,283,222 - Hsu , et al. October 9, 2	2012-10-09
Method To Form A Semiconductor Device Having Gate Dielectric Layers Of Varying Thickness App 20110306196 - Hsu; Kuang-Yuan ; et al.	2011-12-15
Multiple Deposition, Multiple Treatment Dielectric Layer For A Semiconductor Device App 20110256682 - Yu; Xiong-Fei ; et al.	2011-10-20
Method For Fabricating A Gate Dielectric Layer App 20110256731 - LEE; Wei-Yang ; et al.	2011-10-20
Method to form a semiconductor device having gate dielectric layers of varying thicknesses Grant 8,008,143 - Hsu , et al. August 30, 2	2011-08-30
Method To Form A Semiconductor Device Having Gate Dielectric Layers Of Varying Thicknesses App 20110159678 - Hsu; Kuang-Yuan ; et al.	2011-06-30
Method Of Fabricating High-k/metal Gate Device App 20110143529 - Lee; Da-Yuan ; et al.	2011-06-16
Direct injection-locked frequency divider circuit with inductive-coupling feedback architecture Grant 7,671,640 - Lee , et al. March 2, 2	2010-03-02
Negative-feedback type ultra-wideband signal amplification circuit Grant 7,622,995 - Lee , et al. November 24, 2	2009-11-24
Inductance-switchable Dual-band Voltage Controlled Oscillation Circuit App 20090189706 - Lee; Wei-Yang ; et al.	2009-07-30
Negative-feedback Type Ultra-wideband Signal Amplification Circuit App 20090184769 - Lee; Wei-Yang ; et al.	2009-07-23
Direct Injection-locked Frequency Divider Circuit With Inductive-coupling Feedback Architecture App 20090102520 - Lee; Wei-Yang ; et al.	2009-04-23

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