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name:-0.014243125915527
name:-0.01179313659668
name:-0.0070819854736328
LEE; Joonmyoung Patent Filings

LEE; Joonmyoung

Patent Applications and Registrations

Patent applications and USPTO patent grants for LEE; Joonmyoung.The latest application filed is for "apparatus for manufacturing semiconductor device".

Company Profile
10.27.35
  • LEE; Joonmyoung - Gwacheon-si KR
  • Lee; Joonmyoung - Anyang-si KR
  • Lee; Joonmyoung - Suwon-si KR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Apparatus For Manufacturing Semiconductor Device
App 20220127716 - LEE; Joonmyoung ;   et al.
2022-04-28
Magnetic Memory Device
App 20220037586 - Jeong; Junho ;   et al.
2022-02-03
Magnetic Memory Device
App 20210367142 - LEE; Sung Chul ;   et al.
2021-11-25
Magnetic memory device
Grant 11,127,786 - Lee , et al. September 21, 2
2021-09-21
Sputtering Apparatus And Method Of Fabricating Magnetic Memory Device Using The Same
App 20210079517 - LEE; Joonmyoung ;   et al.
2021-03-18
Magnetic memory device, method for manufacturing the same, and substrate treating apparatus
Grant 10,910,552 - Lee , et al. February 2, 2
2021-02-02
Magnetic memory devices
Grant 10,862,025 - Lee , et al. December 8, 2
2020-12-08
Magnetic Memory Device
App 20200243603 - LEE; JOONMYOUNG ;   et al.
2020-07-30
Magnetic Memory Devices
App 20200152700 - LEE; Joonmyoung ;   et al.
2020-05-14
Process control method and process control system for manufacturing semiconductor device
Grant 10,629,807 - Park , et al.
2020-04-21
Magnetic Memory Device, Method For Manufacturing The Same, And Substrate Treating Apparatus
App 20200091412 - LEE; Joonmyoung ;   et al.
2020-03-19
Method of manufacuring a magnetic memory device
Grant 10,553,790 - Lee , et al. Fe
2020-02-04
Process Control Method And Process Control System For Manufacturing Semiconductor Device
App 20190115527 - Park; Jeong-Heon ;   et al.
2019-04-18
Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same
Grant 10,147,873 - Lee , et al. De
2018-12-04
Magnetic memory devices including oxidized non-magnetic patterns with non-metallic elements and methods of fabricating the same
Grant 9,985,200 - Lee , et al. May 29, 2
2018-05-29
Free Layer, Megnetoresistive Cell, And Megnetoresistive Random Acess Memory Device Having Low Boron Concentration Region And High Boron Concentration Region, And Methods Of Fabricating The Same
App 20180138397 - LEE; Joonmyoung ;   et al.
2018-05-17
Sputtering apparatuses and methods of manufacturing a magnetic memory device using the same
Grant 9,934,950 - Lee , et al. April 3, 2
2018-04-03
Magnetic memory device and method for manufacturing the same
Grant 9,923,138 - Park , et al. March 20, 2
2018-03-20
Free layer, magnetoresistive cell, and magnetoresistive random access memory device having low boron concentration region and high boron concentration region, and methods of fabricating the same
Grant 9,905,753 - Lee , et al. February 27, 2
2018-02-27
Magnetic memory device and method of manufacturing the same
Grant 9,859,488 - Lee , et al. January 2, 2
2018-01-02
Magnetic tunnel junction memory devices including crystallized boron-including first magnetic layer on a tunnel barrier layer and lower boron-content second magnetic layer on the first magnetic layer
Grant 9,842,987 - Oh , et al. December 12, 2
2017-12-12
Magnetic memory device and method of fabricating the same
Grant 9,842,637 - Kim , et al. December 12, 2
2017-12-12
Magnetic memory devices having perpendicular magnetic tunnel junction
Grant 9,831,422 - Kim , et al. November 28, 2
2017-11-28
Magnetic Memory Device And Method Of Manufacturing The Same
App 20170194555 - LEE; Joonmyoung ;   et al.
2017-07-06
Magnetic Memory Device And Method Of Fabricating The Same
App 20170170387 - KIM; KI WOONG ;   et al.
2017-06-15
Methods of forming a layer and methods of manufacturing magnetic memory devices using the same
Grant 9,660,187 - Park , et al. May 23, 2
2017-05-23
Methods of Forming a Layer and Methods of Manufacturing Magnetic Memory Devices Using the Same
App 20170125669 - PARK; Yong Sung ;   et al.
2017-05-04
Magnetic Memory Devices Having Perpendicular Magnetic Tunnel Junction
App 20170117455 - KIM; Woojin ;   et al.
2017-04-27
Sputtering Apparatuses and Methods of Manufacturing a Magnetic Memory Device Using the Same
App 20170110301 - LEE; Joonmyoung ;   et al.
2017-04-20
Magnetic Memory Device And Method For Manufacturing The Same
App 20170092849 - PARK; Sang Hwan ;   et al.
2017-03-30
Magnetic Memory Device And Method For Manufacturing The Same
App 20170092848 - Jang; Youngman ;   et al.
2017-03-30
Free Layer, Magnetoresistive Cell, And Magnetoresistive Random Acess Memory Device Having Low Boron Concentration Region And High Boron Concentration Region, And Methods Of Fabricating The Same
App 20170084829 - LEE; Joonmyoung ;   et al.
2017-03-23
Magnetic memory device and method for manufacturing the same
Grant 9,543,505 - Park , et al. January 10, 2
2017-01-10
Magnetic Memory Device And Method Of Manufacturing The Same
App 20160133307 - LEE; Joonmyoung ;   et al.
2016-05-12
Method Of Forming Metal Oxide Layer And Magnetic Memory Device Including The Same
App 20160133831 - KIM; Ki Woong ;   et al.
2016-05-12
Magnetic Memory Device And Method For Manufacturing The Same
App 20160079520 - PARK; Sang Hwan ;   et al.
2016-03-17
Magnetic memory devices having junction magnetic layers and buffer layers and related methods
Grant 9,203,014 - Lee , et al. December 1, 2
2015-12-01
Memory devices and methods of manufacturing the same
Grant 9,184,376 - Park , et al. November 10, 2
2015-11-10
Memory Devices And Methods Of Manufacturing The Same
App 20150162525 - PARK; Sang Hwan ;   et al.
2015-06-11
Magnetic Memory Devices Having Junction Magnetic Layers And Buffer Layers And Related Methods
App 20150008549 - Lee; Joonmyoung ;   et al.
2015-01-08
Magnetic Memory Devices
App 20140353783 - OH; SeChung ;   et al.
2014-12-04

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