| Patent | Date |
|---|
High isostatic strength honeycomb structures and extrusion dies therefor
Grant 11,312,662 - Brew , et al. April 26, 2 | 2022-04-26 |
Anisotropic iron nitride permanent magnets
Grant 11,309,107 - Johnson , et al. April 19, 2 | 2022-04-19 |
Anisotropic Iron Nitride Permanent Magnets
App 20210265086 - JOHNSON; Francis ; et al. | 2021-08-26 |
High Isostatic Strength Honeycomb Structures And Extrusion Dies Therefor
App 20210238104 - Brew; Thomas William ; et al. | 2021-08-05 |
Schottky barrier CMOS device and method
Grant 8,154,025 - Snyder , et al. April 10, 2 | 2012-04-10 |
Dynamic Schottky Barrier Mosfet Device And Method Of Manufacture
App 20120056250 - Snyder; John P. ; et al. | 2012-03-08 |
Method of manufacturing a CMOS device with zero soft error rate
Grant 8,084,342 - Snyder , et al. December 27, 2 | 2011-12-27 |
Dynamic Schottky barrier MOSFET device and method of manufacture
Grant 8,058,167 - Snyder , et al. November 15, 2 | 2011-11-15 |
Metal source and drain transistor having high dielectric constant gate insulator
Grant 8,022,459 - Snyder , et al. September 20, 2 | 2011-09-20 |
Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate
Grant 7,939,902 - Snyder , et al. May 10, 2 | 2011-05-10 |
Method Of Manufacturing A Cmos Device With Zero Soft Error Rate
App 20110034016 - Snyder; John P. ; et al. | 2011-02-10 |
CMOS device with zero soft error rate
Grant 7,821,075 - Snyder , et al. October 26, 2 | 2010-10-26 |
Metal Source And Drain Transistor Having High Dielectric Constant Gate Insulator
App 20100213556 - Snyder; John P. ; et al. | 2010-08-26 |
Schottky Barrier Integrated Circuit
App 20100025774 - Snyder; John P. ; et al. | 2010-02-04 |
Field Effect Transistor Having Source And/or Drain Forming Schottky Or Schottky-like Contact With Strained Semiconductor Substrate
App 20100013014 - Snyder; John P. ; et al. | 2010-01-21 |
Dynamic Schottky Barrier Mosfet Device And Method Of Manufacture
App 20100015802 - Snyder; John P. ; et al. | 2010-01-21 |
Schottky Barrier Cmos Device And Method
App 20100006949 - Snyder; John P. ; et al. | 2010-01-14 |
Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate
App 20080079107 - Snyder; John P. ; et al. | 2008-04-03 |
Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate
Grant 7,294,898 - Snyder , et al. November 13, 2 | 2007-11-13 |
Schottky-barrier mosfet manufacturing method using isotropic etch process
Grant 7,291,524 - Snyder , et al. November 6, 2 | 2007-11-06 |
Short-channel Schottky-barrier MOSFET device and manufacturing method
Grant 7,221,019 - Snyder , et al. May 22, 2 | 2007-05-22 |
CMOS device with zero soft error rate
App 20070080406 - Snyder; John P. ; et al. | 2007-04-12 |
Dynamic Schottky barrier MOSFET device and method of manufacture
App 20070026590 - Snyder; John P. ; et al. | 2007-02-01 |
Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
App 20070007605 - Snyder; John P. ; et al. | 2007-01-11 |
Short-channel schottky-barrier MOSFET device and manufacturing method
App 20060244052 - Snyder; John P. ; et al. | 2006-11-02 |
Schottky barrier MOSFET device and circuit
App 20060237752 - Larson; John M. ; et al. | 2006-10-26 |
Virtual machine emulation in the memory space of a programmable processor
Grant 7,124,237 - Overton , et al. October 17, 2 | 2006-10-17 |
Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
App 20060079059 - Snyder; John P. ; et al. | 2006-04-13 |
Schottky barrier CMOS device and method
App 20050287730 - Snyder, John P. ; et al. | 2005-12-29 |
Schottky barrier CMOS fabrication method
Grant 6,974,737 - Snyder , et al. December 13, 2 | 2005-12-13 |
Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate
Grant 6,949,787 - Snyder , et al. September 27, 2 | 2005-09-27 |
Dynamic schottky barrier MOSFET device and method of manufacture
App 20050139860 - Snyder, John P. ; et al. | 2005-06-30 |
Schottky-barrier MOSFET manufacturing method using isotropic etch process
App 20050118793 - Snyder, John P. ; et al. | 2005-06-02 |
Schottky barrier integrated circuit
App 20050104152 - Snyder, John P. ; et al. | 2005-05-19 |
Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate
App 20050106821 - Snyder, John P. ; et al. | 2005-05-19 |
Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate
App 20050003595 - Snyder, John P. ; et al. | 2005-01-06 |
Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
App 20040171240 - Snyder, John P. ; et al. | 2004-09-02 |
Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate
Grant 6,784,035 - Snyder , et al. August 31, 2 | 2004-08-31 |
Virtual machine emulation in the memory space of a programmable processor
App 20040123290 - Overton, Chad R. ; et al. | 2004-06-24 |
Schottky barrier CMOS device and method
App 20040041226 - Snyder, John P. ; et al. | 2004-03-04 |
Schottky barrier CMOS device and method
App 20030235936 - Snyder, John P. ; et al. | 2003-12-25 |
Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate
App 20030139001 - Snyder, John P. ; et al. | 2003-07-24 |
Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
App 20030034532 - Snyder, John P. ; et al. | 2003-02-20 |
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