loadpatents
name:-0.033849000930786
name:-0.023813009262085
name:-0.00046300888061523
Kutsunai; Toshie Patent Filings

Kutsunai; Toshie

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kutsunai; Toshie.The latest application filed is for "semiconductor device".

Company Profile
0.23.27
  • Kutsunai; Toshie - Osaka JP
  • KUTSUNAI; Toshie - Toyama JP
  • Kutsunai; Toshie - Hyogo JP
  • Kutsunai; Toshie - Kusatsu JP
  • Kutsunai; Toshie - Shiga JP
  • Kutsunai; Toshie - Kusatsu-shi JP
  • Kutsunai, Toshie - US
  • Kutsunai; Toshie - Hirakata JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor device
Grant 8,907,425 - Itou , et al. December 9, 2
2014-12-09
Semiconductor device
Grant 8,604,554 - Itou , et al. December 10, 2
2013-12-10
Semiconductor Device
App 20130015522 - KUTSUNAI; Toshie ;   et al.
2013-01-17
Semiconductor Device
App 20120256266 - ITOU; Satoru ;   et al.
2012-10-11
Semiconductor Device
App 20120146154 - ITOU; SATORU ;   et al.
2012-06-14
Semiconductor Storage Device And Manufacturing Method Of The Same
App 20090250787 - Kutsunai; Toshie
2009-10-08
Semiconductor device and method for fabricating the same
Grant 7,557,011 - Mikawa , et al. July 7, 2
2009-07-07
Semiconductor memory device and method for fabricating the same
Grant 7,456,455 - Kutsunai , et al. November 25, 2
2008-11-25
Semiconductor device and method for fabricating the same
Grant 7,326,990 - Mikawa , et al. February 5, 2
2008-02-05
Semiconductor device and method for fabricating the same
Grant 7,180,122 - Mikawa , et al. February 20, 2
2007-02-20
Semiconductor memory device and method for fabricating the same
App 20060267060 - Kutsunai; Toshie ;   et al.
2006-11-30
Semiconductor device and method for fabricating the same
App 20060220091 - Mikawa; Takumi ;   et al.
2006-10-05
Semiconductor device and method for fabricating the same
App 20060124983 - Kutsunai; Toshie ;   et al.
2006-06-15
Memory device with hydrogen-blocked ferroelectric capacitor
Grant 7,060,552 - Mikawa , et al. June 13, 2
2006-06-13
Semiconductor device and method for fabricating the same
Grant 7,053,436 - Nagano , et al. May 30, 2
2006-05-30
Semiconductor device and method for fabricating the same
App 20060079066 - Mikawa; Takumi ;   et al.
2006-04-13
Ferroelectric memory device and method for fabricating the same
Grant 6,963,095 - Mikawa , et al. November 8, 2
2005-11-08
Method of fabricating semiconductor device with capacitor covered by a TEOS-03 film
Grant 6,939,725 - Kutsunai , et al. September 6, 2
2005-09-06
Semiconductor device and method for fabricating the same
App 20050087788 - Kutsunai, Toshie ;   et al.
2005-04-28
Semiconductor device and method for fabricating the same
App 20050082638 - Nagano, Yoshihisa ;   et al.
2005-04-21
Semiconductor device and method for fabricating the same
App 20050045990 - Nakao, Keisaku ;   et al.
2005-03-03
Semiconductor device and method for fabricating the same
Grant 6,849,887 - Nagano , et al. February 1, 2
2005-02-01
Semiconductor device and method for fabricating the same
App 20050012133 - Mikawa, Takumi ;   et al.
2005-01-20
Semiconductor device and method for fabricating the same
Grant 6,809,000 - Nakao , et al. October 26, 2
2004-10-26
Semiconductor memory device and method for manufacturing the same
App 20040206997 - Mikawa, Takumi ;   et al.
2004-10-21
Semiconductor device and method for fabricating the same
App 20040185653 - Nagano, Yoshihisa ;   et al.
2004-09-23
Semiconductor device and method for fabricating the same
Grant 6,781,177 - Kutsunai August 24, 2
2004-08-24
Semiconductor device and method and system for fabricating the same
App 20040155279 - Kutsunai, Toshie ;   et al.
2004-08-12
Semiconductor device with an oxygen diffusion barrier layer formed from a composite nitride
Grant 6,753,566 - Kutsunai , et al. June 22, 2
2004-06-22
Semiconductor memory with hydrogen barrier
Grant 6,750,492 - Mikawa , et al. June 15, 2
2004-06-15
Semiconductor device and method and system for fabricating the same
Grant 6,737,697 - Kutsunai , et al. May 18, 2
2004-05-18
Semiconductor device and method for fabricating the same
Grant 6,723,637 - Kutsunai , et al. April 20, 2
2004-04-20
Ferroelectric memory device and method for fabricating the same
App 20040021158 - Mikawa, Takumi ;   et al.
2004-02-05
Semiconductor device and method for fabricating the same
App 20030227043 - Kutsunai, Toshie
2003-12-11
Semiconductor device and method for fabricating the same
App 20030207535 - Kutsunai, Toshie ;   et al.
2003-11-06
Semiconductor device and method for fabricating the same
App 20030197212 - Kutsunai, Toshie ;   et al.
2003-10-23
Method for fabricating ferroelectric memory device and method for fabricating the same
Grant 6,602,721 - Mikawa , et al. August 5, 2
2003-08-05
Semiconductor device with oxygen diffusion barrier layer termed from composite nitride
Grant 6,590,252 - Kutsunai , et al. July 8, 2
2003-07-08
Semiconductor memory device and method for manufacturing the same
App 20030042522 - Mikawa, Takumi ;   et al.
2003-03-06
Semiconductor device and method for fabricating the same
App 20020149082 - Nagano, Yoshihisa ;   et al.
2002-10-17
Ferroelectric memory device and method for fabricating the same
App 20020115226 - Mikawa, Takumi ;   et al.
2002-08-22
Semiconductor Device And Method For Fabricating The Same
App 20020056861 - NAGANO, YOSHIHISA ;   et al.
2002-05-16
Semiconductor device and method for fabricating the same
App 20020055223 - Kutsunai, Toshie ;   et al.
2002-05-09
Semiconductor device and method and system for fabricating the same
App 20010028074 - Kutsunai, Toshie ;   et al.
2001-10-11
Semiconductor device and method for fabricating the same
App 20010020709 - Nakao, Keisaku ;   et al.
2001-09-13
Semiconductor capacitive device having improved anti-diffusion properties and a method of making the same
Grant 6,239,462 - Nakao , et al. May 29, 2
2001-05-29
Semiconductor device and method for fabricating the same
Grant 6,174,822 - Nagano , et al. January 16, 2
2001-01-16

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