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Patent applications and USPTO patent grants for Kung; Pohan.The latest application filed is for "novel structure for metal gate electrode and method of fabrication".
Patent | Date |
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Novel Structure for Metal Gate Electrode and Method of Fabrication App 20220216317 - Hsiao; Ru-Shang ;   et al. | 2022-07-07 |
Structure for metal gate electrode and method of fabrication Grant 11,282,934 - Hsiao , et al. March 22, 2 | 2022-03-22 |
Semiconductor device and manufacturing process thereof Grant 11,271,103 - Kung , et al. March 8, 2 | 2022-03-08 |
Novel Structure for Metal Gate Electrode and Method of Fabrication App 20210028290 - Hsiao; Ru-Shang ;   et al. | 2021-01-28 |
Semiconductor Device And Manufacturing Process Thereof App 20210005743 - KUNG; POHAN ;   et al. | 2021-01-07 |
Methods of fabricating semiconductor devices with metal-gate work-function tuning layers Grant 10,515,807 - Chien , et al. Dec | 2019-12-24 |
Methods Of Fabricating Semiconductor Devices With Metal-gate Work-function Tuning Layers App 20190385855 - CHIEN; Jui-Fen ;   et al. | 2019-12-19 |
Semiconductor Device And Manufacturing Process Thereof App 20160276156 - KUNG; POHAN ;   et al. | 2016-09-22 |
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