| Patent | Date |
|---|
Decentralized Control Plane
App 20210152467 - Nallapareddy; Maheedhar ; et al. | 2021-05-20 |
Decentralized control plane
Grant 10,931,572 - Nallapareddy , et al. February 23, 2 | 2021-02-23 |
Decentralized Control Plane
App 20200236039 - NALLAPAREDDY; Maheedhar ; et al. | 2020-07-23 |
Neuromorphic logic for an array of high on/off ratio non-volatile memory cells
Grant 10,489,700 - Asnaashari , et al. Nov | 2019-11-26 |
Barrier modulated cell structures with intrinsic vertical bit line architecture
Grant 10,388,870 - Ratnam , et al. A | 2019-08-20 |
Resistive memory device containing carbon barrier and method of making thereof
Grant 10,340,449 - Wu , et al. | 2019-07-02 |
Methods and apparatus for three-dimensional nonvolatile memory
Grant 10,283,708 - Wu , et al. | 2019-05-07 |
Methods and apparatus for three-dimensional nonvolatile memory
Grant 10,283,567 - Saenz , et al. | 2019-05-07 |
Low power barrier modulated cell for storage class memory
Grant 10,276,792 - Wu , et al. | 2019-04-30 |
Barrier Modulated Cell Structures With Intrinsic Vertical Bit Line Architecture
App 20190123276 - Ratnam; Perumal ; et al. | 2019-04-25 |
Resistive Memory Device Containing Carbon Barrier And Method Of Making Thereof
App 20180351093 - WU; Ming-Che ; et al. | 2018-12-06 |
Recessed high voltage metal oxide semiconductor transistor for RRAM cell
Grant 10,115,819 - Gee , et al. October 30, 2 | 2018-10-30 |
Methods and apparatus for three-dimensional nonvolatile memory
Grant 10,109,680 - Wicklein , et al. October 23, 2 | 2018-10-23 |
Methods And Apparatus For Programming Barrier Modulated Memory Cells
App 20180277208 - Kamalanathan; Deepak ; et al. | 2018-09-27 |
Methods And Apparatus For Three-dimensional Nonvolatile Memory
App 20180261766 - Wu; Ming-Che ; et al. | 2018-09-13 |
Methods And Apparatus For Three-dimensional Nonvolatile Memory
App 20180247975 - Saenz; Juan ; et al. | 2018-08-30 |
Multi-gate vertical field effect transistor with channel strips laterally confined by gate dielectric layers, and method of making thereof
Grant 10,032,908 - Ratnam , et al. July 24, 2 | 2018-07-24 |
Multi-gate Vertical Field Effect Transistor With Channel Strips Laterally Confined By Gate Dielectric Layers, And Method Of Making Thereof
App 20180197988 - RATNAM; Perumal ; et al. | 2018-07-12 |
Methods And Apparatus For Three-dimensional Nonvolatile Memory
App 20180166559 - Zhou; Guangle ; et al. | 2018-06-14 |
Low Power Barrier Modulated Cell For Storage Class Memory
App 20180159033 - Wu; Ming-Che ; et al. | 2018-06-07 |
Volatile memory device employing a resistive memory element
Grant 9,953,697 - Kumar , et al. April 24, 2 | 2018-04-24 |
Low power barrier modulated cell for storage class memory
Grant 9,923,140 - Wu , et al. March 20, 2 | 2018-03-20 |
Resistive memory device having sidewall spacer electrode and method of making thereof
Grant 9,806,256 - Wu , et al. October 31, 2 | 2017-10-31 |
Enhanced erasing of two-terminal memory
Grant 9,805,794 - Li , et al. October 31, 2 | 2017-10-31 |
Volatile Memory Device Employing A Resistive Memory Element
App 20170309324 - KUMAR; Tanmay ; et al. | 2017-10-26 |
Low Power Barrier Modulated Cell For Storage Class Memory
App 20170309819 - Wu; Ming-Che ; et al. | 2017-10-26 |
Low temperature P+ polycrystalline silicon material for non-volatile memory device
Grant 9,793,474 - Sun , et al. October 17, 2 | 2017-10-17 |
Methods and apparatus for three-dimensional nonvolatile memory
Grant 9,768,180 - Zhou , et al. September 19, 2 | 2017-09-19 |
Noble metal / non-noble metal electrode for RRAM applications
Grant 9,735,358 - Jo , et al. August 15, 2 | 2017-08-15 |
Field programmable gate array utilizing two-terminal non-volatile memory
Grant 9,729,155 - Nazarian , et al. August 8, 2 | 2017-08-08 |
Resistive memory device and fabrication methods
Grant 9,673,255 - Jo , et al. June 6, 2 | 2017-06-06 |
Enhanced programming of two-terminal memory
Grant 9,613,694 - Li , et al. April 4, 2 | 2017-04-04 |
Recessed High Voltage Metal Oxide Semiconductor Transistor For Rram Cell
App 20160351625 - Gee; Harry Yue ; et al. | 2016-12-01 |
MLC OTP operation with diode behavior in ZnO RRAM devices for 3D memory
Grant 9,502,102 - Kumar , et al. November 22, 2 | 2016-11-22 |
Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same
Grant 9,472,301 - Bandyopadhyay , et al. October 18, 2 | 2016-10-18 |
Noble Metal / Non-noble Metal Electrode For Rram Applications
App 20160233422 - Jo; Sung Hyun ; et al. | 2016-08-11 |
MLC OTP operation in A-Si RRAM
Grant 9,373,410 - Kumar June 21, 2 | 2016-06-21 |
Low temperature in-situ doped silicon-based conductor material for memory cell
Grant 9,343,668 - Maxwell , et al. May 17, 2 | 2016-05-17 |
Soak time programming for two-terminal memory
Grant 9,336,876 - Kumar , et al. May 10, 2 | 2016-05-10 |
Resistive memory cell with solid state diode
Grant 9,324,942 - Nazarian , et al. April 26, 2 | 2016-04-26 |
Pre-conditioning two-terminal memory for increased endurance
Grant 9,245,622 - Kumar January 26, 2 | 2016-01-26 |
Field programmable gate array utilizing two-terminal non-volatile memory
Grant 9,191,000 - Nazarian , et al. November 17, 2 | 2015-11-17 |
Dielectric-based Memory Cells Having Multi-level One-time Programmable And Bi-level Rewriteable Operating Modes And Methods Of Forming The Same
App 20150325310 - Bandyopadhyay; Abhijit ; et al. | 2015-11-12 |
Surface treatment to improve resistive-switching characteristics
Grant 9,178,149 - Miller , et al. November 3, 2 | 2015-11-03 |
Multi-level cell operation in silver/amorphous silicon RRAM
Grant 9,058,865 - Jo , et al. June 16, 2 | 2015-06-16 |
Field programmable gate array utilizing two-terminal non-volatile memory
Grant 9,054,702 - Nazarian , et al. June 9, 2 | 2015-06-09 |
Resistive Memory Device And Fabrication Methods
App 20150144863 - JO; Sung Hyun ; et al. | 2015-05-28 |
One Time Programmable And Multi-level, Two-terminal Memory Cell
App 20150129829 - KUMAR; Tanmay | 2015-05-14 |
Multi-level cell operation using zinc oxide switching material in non-volatile memory device
Grant 8,971,088 - Jo , et al. March 3, 2 | 2015-03-03 |
Resistive memory device and fabrication methods
Grant 8,946,669 - Jo , et al. February 3, 2 | 2015-02-03 |
Resistive switching device structure with improved data retention for non-volatile memory device and method
Grant 8,946,673 - Kumar February 3, 2 | 2015-02-03 |
Field Programmable Gate Array Utilizing Two-terminal Non-volatile Memory
App 20140327470 - NAZARIAN; Hagop ; et al. | 2014-11-06 |
Surface Treatment to Improve Resistive-Switching Characteristics
App 20140322887 - Miller; Michael ; et al. | 2014-10-30 |
Field Programmable Gate Array Utilizing Two-terminal Non-volatile Memory
App 20140320166 - NAZARIAN; Hagop ; et al. | 2014-10-30 |
Surface treatment to improve resistive-switching characteristics
Grant 8,872,151 - Miller , et al. October 28, 2 | 2014-10-28 |
Field Programmable Gate Array Utilizing Two-terminal Non-volatile Memory
App 20140292368 - NAZARIAN; Hagop ; et al. | 2014-10-02 |
Amorphous Silicon Rram With Non-linear Device And Operation
App 20140269001 - KUMAR; Tanmay | 2014-09-18 |
Low Temperature In-situ Doped Silicon-based Conductor Material For Memory Cell
App 20140264250 - MAXWELL; Steve ; et al. | 2014-09-18 |
Dielectric-based Memory Cells Having Multi-level One-time Programmable And Bi-level Rewriteable Operating Modes And Methods Of Forming The Same
App 20140241031 - Bandyopadhyay; Abhijit ; et al. | 2014-08-28 |
Low Temperature P+ Polycrystalline Silicon Material For Non-volatile Memory Device
App 20140191180 - SUN; Xin ; et al. | 2014-07-10 |
Nonvolatile Memory Cell Comprising A Diode And A Resistance-switching Material
App 20140166968 - Herner; Scott Brad ; et al. | 2014-06-19 |
Field programmable gate array utilizing two-terminal non-volatile memory
Grant 8,754,671 - Nazarian , et al. June 17, 2 | 2014-06-17 |
Noble Metal / Non-noble Metal Electrode For Rram Applications
App 20140158968 - JO; Sung Hyun ; et al. | 2014-06-12 |
Nonvolatile memory cell comprising a diode and a resistance-switching material
Grant 8,687,410 - Herner , et al. April 1, 2 | 2014-04-01 |
Field programmable gate array utilizing two-terminal non-volatile memory
Grant 8,674,724 - Nazarian , et al. March 18, 2 | 2014-03-18 |
Low temperature P+ polycrystalline silicon material for non-volatile memory device
Grant 8,658,476 - Sun , et al. February 25, 2 | 2014-02-25 |
Amorphous silicon RRAM with non-linear device and operation
Grant 8,659,929 - Kumar February 25, 2 | 2014-02-25 |
Surface Treatment to Improve Resistive-Switching Characteristics
App 20140001430 - Miller; Michael ; et al. | 2014-01-02 |
Heterojunction device comprising a semiconductor oxide and a resistivity-switching oxide or nitride
Grant 8,592,792 - Kumar , et al. November 26, 2 | 2013-11-26 |
Noble metal/non-noble metal electrode for RRAM applications
Grant 8,569,172 - Jo , et al. October 29, 2 | 2013-10-29 |
Method of programming a nonvolatile memory cell by reverse biasing a diode steering element to set a storage element
Grant 8,547,725 - Kumar , et al. October 1, 2 | 2013-10-01 |
Miiim Diode Having Lanthanum Oxide
App 20130181181 - Sekar; Deepak C. ; et al. | 2013-07-18 |
Surface treatment to improve resistive-switching characteristics
Grant 8,465,996 - Miller , et al. June 18, 2 | 2013-06-18 |
Reverse leakage reduction and vertical height shrinking of diode with halo doping
Grant 8,450,835 - Chen , et al. May 28, 2 | 2013-05-28 |
Nonvolatile Memory Cell Comprising A Diode And A Resistance-switching Material
App 20130121061 - Herner; Scott Brad ; et al. | 2013-05-16 |
Field Programmable Gate Array Utilizing Two-terminal Non-volatile Memory
App 20130027081 - Nazarian; Hagop ; et al. | 2013-01-31 |
Field Programmable Gate Array Utilizing Two-terminal Non-volatile Memory
App 20130027079 - Nazarian; Hagop ; et al. | 2013-01-31 |
Nonvolatile memory cell comprising a diode and a resistance-switching material
Grant 8,349,664 - Herner , et al. January 8, 2 | 2013-01-08 |
Vertical diode based memory cells having a lowered programming voltage and methods of forming the same
Grant 8,349,663 - Herner , et al. January 8, 2 | 2013-01-08 |
Amorphous Silicon Rram With Non-linear Device And Operation
App 20130003436 - KUMAR; Tanmay | 2013-01-03 |
Surface Treatment To Improve Resistive-switching Characteristics
App 20120315725 - Miller; Michael ; et al. | 2012-12-13 |
Heterojunction Device Comprising A Semiconductor And A Resistivity-switching Oxide Or Nitride
App 20120280202 - Kumar; Tanmay ; et al. | 2012-11-08 |
Surface treatment to improve resistive-switching characteristics
Grant 8,274,066 - Miller , et al. September 25, 2 | 2012-09-25 |
Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
Grant 8,227,787 - Kumar , et al. July 24, 2 | 2012-07-24 |
Surface Treatment To Improve Resistive-switching Characteristics
App 20120032133 - Miller; Michael ; et al. | 2012-02-09 |
Nonvolatile memory device containing carbon or nitrogen doped diode
Grant 8,102,694 - Herner , et al. January 24, 2 | 2012-01-24 |
Method of making nonvolatile memory device containing carbon or nitrogen doped diode
Grant 8,072,791 - Herner , et al. December 6, 2 | 2011-12-06 |
Surface treatment to improve resistive-switching characteristics
Grant 8,062,918 - Miller , et al. November 22, 2 | 2011-11-22 |
Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing
Grant 8,048,474 - Kumar , et al. November 1, 2 | 2011-11-01 |
Nonvolatile memory cell including carbon storage element formed on a silicide layer
Grant 8,023,310 - Fu , et al. September 20, 2 | 2011-09-20 |
Non-volatile memory cell with embedded antifuse
Grant 8,008,700 - Kumar , et al. August 30, 2 | 2011-08-30 |
Masking of repeated overlay and alignment marks to allow reuse of photomasks in a vertical structure
Grant 7,982,273 - Chen , et al. July 19, 2 | 2011-07-19 |
Method of programming a nonvolatile memory device containing a carbon storage material
Grant 7,978,496 - Kumar , et al. July 12, 2 | 2011-07-12 |
MIIM diodes having stacked structure
Grant 7,969,011 - Sekar , et al. June 28, 2 | 2011-06-28 |
Heterojunction Device Comprising A Semiconductor And A Resistivity-switching Oxide Or Nitride
App 20110114913 - Kumar; Tanmay ; et al. | 2011-05-19 |
Programming a memory cell with a diode in series by applying reverse bias
Grant 7,944,728 - Nian , et al. May 17, 2 | 2011-05-17 |
Method of making a diode read/write memory cell in a programmed state
Grant 7,915,094 - Kumar , et al. March 29, 2 | 2011-03-29 |
Method for forming doped polysilicon via connecting polysilicon layers
Grant 7,915,163 - Konevecki , et al. March 29, 2 | 2011-03-29 |
Method for forming doped polysilicon via connecting polysilicon layers
Grant 7,915,164 - Konevecki , et al. March 29, 2 | 2011-03-29 |
Dual insulating layer diode with asymmetric interface state and method of fabrication
Grant 7,897,453 - Chen , et al. March 1, 2 | 2011-03-01 |
Method For Forming Doped Polysilicon Via Connecting Polysilicon Layers
App 20110021019 - Konevecki; Michael W. ; et al. | 2011-01-27 |
Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
Grant 7,875,871 - Kumar , et al. January 25, 2 | 2011-01-25 |
Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
Grant 7,859,887 - Chen , et al. December 28, 2 | 2010-12-28 |
Nonvolatile Memory Cell Comprising A Diode And A Resistance-switching Material
App 20100302836 - Herner; S. Brad ; et al. | 2010-12-02 |
Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
Grant 7,830,698 - Chen , et al. November 9, 2 | 2010-11-09 |
Devices having reversible resistivity-switching metal oxide or nitride layer with added metal
Grant 7,816,659 - Herner , et al. October 19, 2 | 2010-10-19 |
Nonvolatile memory cell comprising a diode and a resistance-switching material
Grant 7,812,404 - Herner , et al. October 12, 2 | 2010-10-12 |
Method of making 3D R/W cell with reduced reverse leakage
Grant 7,800,939 - Kumar , et al. September 21, 2 | 2010-09-21 |
Programming methods to increase window for reverse write 3D cell
Grant 7,800,934 - Kumar , et al. September 21, 2 | 2010-09-21 |
Memory cell comprising switchable semiconductor memory element with trimmable resistance
Grant 7,800,932 - Kumar , et al. September 21, 2 | 2010-09-21 |
Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
Grant 7,800,933 - Kumar , et al. September 21, 2 | 2010-09-21 |
3D R/W cell with reduced reverse leakage
Grant 7,759,666 - Kumar , et al. July 20, 2 | 2010-07-20 |
Nonvolatile memory cell including carbon storage element formed on a silicide layer
App 20100176366 - Fu; Chu-Chen ; et al. | 2010-07-15 |
Method of programming a nonvolatile memory device containing a carbon storage material
App 20100157651 - Kumar; Tanmay ; et al. | 2010-06-24 |
Programming a memory cell with a diode in series by applying reverse bias
App 20100157652 - Nian; Yibo ; et al. | 2010-06-24 |
Dual Insulating Layer Diode With Asymmetric Interface State And Method Of Fabrication
App 20100148324 - Chen; Xiying ; et al. | 2010-06-17 |
Method Of Programming A Nonvolatile Memory Cell By Reverse Biasing A Diode Steering Element To Set A Storage Element
App 20100142256 - KUMAR; Tanmay ; et al. | 2010-06-10 |
Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
Grant 7,723,180 - Chen , et al. May 25, 2 | 2010-05-25 |
Systems for controlled pulse operations in non-volatile memory
Grant 7,719,874 - Scheuerlein , et al. May 18, 2 | 2010-05-18 |
Method of making a diode read/write memory cell in a programmed state
App 20100110752 - Kumar; Tanmay ; et al. | 2010-05-06 |
Large capacity one-time programmable memory cell using metal oxides
Grant 7,706,169 - Kumar April 27, 2 | 2010-04-27 |
Miim Diodes Having Stacked Structure
App 20100078759 - Sekar; Deepak C. ; et al. | 2010-04-01 |
Miim Diodes
App 20100078758 - Sekar; Deepak C. ; et al. | 2010-04-01 |
Method of making non-volatile memory cell with embedded antifuse
Grant 7,660,181 - Kumar , et al. February 9, 2 | 2010-02-09 |
Carbon-based Resistivity-switching Materials And Methods Of Forming The Same
App 20100006812 - Xu; Huiwen ; et al. | 2010-01-14 |
Method of making a diode read/write memory cell in a programmed state
Grant 7,618,850 - Kumar , et al. November 17, 2 | 2009-11-17 |
Surface Treatment To Improve Resistive-switching Characteristics
App 20090272961 - Miller; Michael ; et al. | 2009-11-05 |
Reverse leakage reduction and vertical height shrinking of diode with halo doping
App 20090268508 - Chen; Xiying ; et al. | 2009-10-29 |
Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
App 20090258489 - Chen; Xiying ; et al. | 2009-10-15 |
Method of making nonvolatile memory cell containing carbon resistivity switching as a storage element by low temperature processing
App 20090258135 - Kumar; Tanmay ; et al. | 2009-10-15 |
Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
App 20090257265 - Chen; Xiying ; et al. | 2009-10-15 |
Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
App 20090257266 - Chen; Xiying ; et al. | 2009-10-15 |
Method For Forming Doped Polysilicon Via Connecting Polysilicon Layers
App 20090258462 - Konevecki; Michael W. ; et al. | 2009-10-15 |
Masking Of Repeated Overlay And Alignment Marks To Allow Reuse Of Photomasks In A Vertical Structure
App 20090230571 - Chen; Yung-Tin ; et al. | 2009-09-17 |
Doped polysilicon via connecting polysilicon layers
Grant 7,566,974 - Konevecki , et al. July 28, 2 | 2009-07-28 |
Large capacity one-time programmable memory cell using metal oxides
App 20090168486 - Kumar; Tanmay | 2009-07-02 |
Masking of repeated overlay and alignment marks to allow reuse of photomasks in a vertical structure
Grant 7,553,611 - Chen , et al. June 30, 2 | 2009-06-30 |
Method To Form A Rewriteable Memory Cell Comprising A Diode And A Resistivity-switching Grown Oxide
App 20090104756 - KUMAR; TANMAY | 2009-04-23 |
Controlled pulse operations in non-volatile memory
Grant 7,522,448 - Scheuerlein , et al. April 21, 2 | 2009-04-21 |
Vertical Diode Based Memory Cells Having A Lowered Programming Voltage And Methods Of Forming The Same
App 20090085154 - Herner; S. Brad ; et al. | 2009-04-02 |
Reverse bias trim operations in non-volatile memory
Grant 7,495,947 - Scheuerlein , et al. February 24, 2 | 2009-02-24 |
Systems for reverse bias trim operations in non-volatile memory
Grant 7,492,630 - Scheuerlein , et al. February 17, 2 | 2009-02-17 |
Method of making 3D R/W cell with reduced reverse leakage
App 20090003036 - Kumar; Tanmay ; et al. | 2009-01-01 |
3D R/W cell with reduced reverse leakage
App 20090001347 - Kumar; Tanmay ; et al. | 2009-01-01 |
Method of making nonvolatile memory device containing carbon or nitrogen doped diode
App 20080316795 - Herner; S. Brad ; et al. | 2008-12-25 |
Nonvolatile memory device containing carbon or nitrogen doped diode
App 20080316808 - Herner; S. Brad ; et al. | 2008-12-25 |
Method for using a multi-use memory cell and memory array
Grant 7,447,056 - Scheuerlein , et al. November 4, 2 | 2008-11-04 |
Controlled Pulse Operations In Non-volatile Memory
App 20080025076 - Scheuerlein; Roy E. ; et al. | 2008-01-31 |
Systems For Reverse Bias Trim Operations In Non-volatile Memory
App 20080025078 - Scheuerlein; Roy E. ; et al. | 2008-01-31 |
Reverse Bias Trim Operations In Non-volatile Memory
App 20080025068 - Scheuerlein; Roy E. ; et al. | 2008-01-31 |
Systems For Controlled Pulse Operations In Non-volatile Memory
App 20080025077 - Scheuerlein; Roy E. ; et al. | 2008-01-31 |
Non-volatile memory cell with embedded antifuse
App 20080017912 - Kumar; Tanmay ; et al. | 2008-01-24 |
Bandgap engineered charge storage layer for 3D TFT
App 20080012065 - Kumar; Tanmay | 2008-01-17 |
Method of making non-volatile memory cell with embedded antifuse
App 20080013364 - Kumar; Tanmay ; et al. | 2008-01-17 |
Programming methods to increase window for reverse write 3D cell
App 20080007989 - Kumar; Tanmay ; et al. | 2008-01-10 |
Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
App 20070228414 - Kumar; Tanmay ; et al. | 2007-10-04 |
Memory Cell Comprising A Diode Fabricated In A Low Resistivity, Programmed State
App 20070164388 - KUMAR; Tanmay ; et al. | 2007-07-19 |
Method Of Making A Diode Read/write Memory Cell In A Programmed State
App 20070164309 - Kumar; Tanmay ; et al. | 2007-07-19 |
Reversible resistivity-switching metal oxide or nitride layer with added metal
App 20070114508 - Herner; S. Brad ; et al. | 2007-05-24 |
Vertical diode doped with antimony to avoid or limit dopant diffusion
App 20070102724 - Kumar; Tanmay ; et al. | 2007-05-10 |
Memory cell comprising switchable semiconductor memory element with trimmable resistance
App 20070090425 - Kumar; Tanmay ; et al. | 2007-04-26 |
Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
App 20070072360 - Kumar; Tanmay ; et al. | 2007-03-29 |
Multi-use memory cell and memory array
App 20070069276 - Scheuerlein; Roy E. ; et al. | 2007-03-29 |
Method for using a multi-use memory cell and memory array
App 20070070690 - Scheuerlein; Roy E. ; et al. | 2007-03-29 |
Transistor layout configuration for tight-pitched memory array lines
Grant 7,177,227 - Petti , et al. February 13, 2 | 2007-02-13 |
Integrated circuit embodying a non-volatile memory cell
App 20070007577 - Bandyopadhyay; Abhijit ; et al. | 2007-01-11 |
Nonvolatile memory cell comprising a diode and a resistance-switching material
App 20060250837 - Herner; S. Brad ; et al. | 2006-11-09 |
Masking of repeated overlay and alignment marks to allow reuse of photomasks in a vertical structure
App 20060222962 - Chen; Yung-Tin ; et al. | 2006-10-05 |
Transistor Layout Configuration For Tight-pitched Memory Array Lines
App 20060221758 - Petti; Christopher J. ; et al. | 2006-10-05 |
Transistor layout configuration for tight-pitched memory array lines
Grant 7,054,219 - Petti , et al. May 30, 2 | 2006-05-30 |
Doped polysilicon via connecting polysilicon layers
App 20060071074 - Konevecki; Michael W. ; et al. | 2006-04-06 |
Method of programming a monolithic three-dimensional memory
App 20060067127 - Fasoli; Luca G. ; et al. | 2006-03-30 |
Polysilicon resistor having adjustable temperature coefficients and the method of making the same
App 20020008302 - Singh, Varun ; et al. | 2002-01-24 |
Method of making polysilicon resistor having adjustable temperature coefficients
Grant 6,306,718 - Singh , et al. October 23, 2 | 2001-10-23 |
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