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name:-0.027374029159546
name:-0.0094349384307861
KUMAGAI; Yoshinao Patent Filings

KUMAGAI; Yoshinao

Patent Applications and Registrations

Patent applications and USPTO patent grants for KUMAGAI; Yoshinao.The latest application filed is for "method for growing beta-ga2o3-based single crystal film, and crystalline layered structure".

Company Profile
9.27.30
  • KUMAGAI; Yoshinao - Tokyo JP
  • Kumagai; Yoshinao - Fuchu JP
  • KUMAGAI; Yoshinao - Fuchu-shi Tokyo
  • Kumagai; Yoshinao - Koganei JP
  • Kumagai; Yoshinao - Fucyu JP
  • Kumagai; Yoshinao - Koganei-shi JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method For Growing Beta-ga2o3-based Single Crystal Film, And Crystalline Layered Structure
App 20210404086 - GOTO; Ken ;   et al.
2021-12-30
Crystal laminate structure
Grant 11,047,067 - Goto , et al. June 29, 2
2021-06-29
Semiconductor substrate, and epitaxial wafer and method for producing same
Grant 10,985,016 - Goto , et al. April 20, 2
2021-04-20
Semiconductor element and crystalline laminate structure
Grant 10,861,945 - Sasaki , et al. December 8, 2
2020-12-08
Group III nitride laminate and vertical semiconductor device having the laminate
Grant 10,731,274 - Kumagai , et al.
2020-08-04
Semiconductor Substrate, And Epitaxial Wafer And Method For Producing Same
App 20200243332 - GOTO; Ken ;   et al.
2020-07-30
Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer
Grant 10,676,841 - Goto , et al.
2020-06-09
Crystal Laminate Structure
App 20200102667 - GOTO; Ken ;   et al.
2020-04-02
Crystal laminate structure
Grant 10,538,862 - Goto , et al. Ja
2020-01-21
Group Iii Nitride Laminate And Vertical Semiconductor Device Having The Laminate
App 20190323146 - KUMAGAI; Yoshinao ;   et al.
2019-10-24
High voltage withstand Ga2O3-based single crystal schottky barrier diode
Grant 10,199,512 - Sasaki , et al. Fe
2019-02-05
Nitride semiconductor crystal, manufacturing method and manufacturing equipment
Grant 10,125,433 - Koukitu , et al. November 13, 2
2018-11-13
Indium Gallium Nitride Light Emitting Devices
App 20180269351 - Krames; Michael R. ;   et al.
2018-09-20
High Withstand Voltage Schottky Barrier Diode
App 20180254355 - SASAKI; Kohei ;   et al.
2018-09-06
Indium gallium nitride light emitting devices
Grant 9,978,904 - Krames , et al. May 22, 2
2018-05-22
Crystal Laminate Structure
App 20180073164 - GOTO; Ken ;   et al.
2018-03-15
Highly transparent aluminum nitride single crystalline layers and devices made therefrom
Grant 9,840,790 - Koukitu , et al. December 12, 2
2017-12-12
Semiconductor Element And Crystalline Laminate Structure
App 20170278933 - SASAKI; Kohei ;   et al.
2017-09-28
Method for manufacturing aluminum-based group III nitride single crystal by hydride vapor phase epitaxy
Grant 9,708,733 - Koukitsu , et al. July 18, 2
2017-07-18
Single-cystalline aluminum nitride substrate and a manufacturing method thereof
Grant 9,691,942 - Koukitu , et al. June 27, 2
2017-06-27
Semiconductor Substrate, Epitaxial Wafer, And Method For Manufacturing Epitaxial Wafer
App 20170145590 - GOTO; Ken ;   et al.
2017-05-25
ZnO film production system and production method using ZnO film production system having heating units and control device
Grant 9,611,545 - Kang , et al. April 4, 2
2017-04-04
METHOD FOR GROWING BETA-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTALLINE LAYERED STRUCTURE
App 20160265137 - GOTO; Ken ;   et al.
2016-09-15
Nitride Semiconductor Crystal, Manufacturing Method And Manufacturing Equipment
App 20160186361 - KOUKITU; Akinori ;   et al.
2016-06-30
Method For Manufacturing Aluminum-based Group Iii Nitride Single Crystal
App 20160108554 - KOUKITSU; Akinori ;   et al.
2016-04-21
Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal
Grant 9,281,180 - Koukitu , et al. March 8, 2
2016-03-08
Highly Transparent Aluminum Nitride Single Crystalline Layers And Devices Made Therefrom
App 20150247260 - Koukitu; Akinori ;   et al.
2015-09-03
ZnO FILM PRODUCTION DEVICE, AND PRODUCTION METHOD
App 20150225846 - Kang; Song yun ;   et al.
2015-08-13
Method of producing a group III nitride crystal
Grant 8,926,752 - Koukitu , et al. January 6, 2
2015-01-06
Single-Crystalline Aluminum Nitride Substrate and a Manufacturing Method Thereof
App 20140346638 - Koukitu; Akinori ;   et al.
2014-11-27
Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device
Grant 8,822,263 - Koukitu , et al. September 2, 2
2014-09-02
Indium Gallium Nitride Light Emitting Devices
App 20140103356 - KRAMES; Michael R. ;   et al.
2014-04-17
Method For Producing Gallium Trichloride Gas And Method For Producing Nitride Semiconductor Crystal
App 20130130477 - Koukuti; Akinori ;   et al.
2013-05-23
n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof
Grant 8,129,208 - Koukitu , et al. March 6, 2
2012-03-06
Laminated Body And The Method For Production Thereof
App 20110094438 - Koukitu; Akinori ;   et al.
2011-04-28
Gallium nitride substrate and gallium nitride layer formation method
Grant 7,915,149 - Nakahata , et al. March 29, 2
2011-03-29
METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE
App 20110018104 - Nagashima; Toru ;   et al.
2011-01-27
N-type Conductive Aluminum Nitride Semiconductor Crystal And Manufacturing Method Thereof
App 20100320462 - Koukitu; Akinori ;   et al.
2010-12-23
Gallium nitride baseplate and epitaxial substrate
Grant 7,843,040 - Koukitu , et al. November 30, 2
2010-11-30
Method Of Producing A Group Iii Nitride Crystal
App 20100093124 - Koukitu; Akinori ;   et al.
2010-04-15
Epitaxial Growth Method, Epitaxial Crystal Structure, Epitaxial Crystal Growth Apparatus, And Semiconductor Device
App 20100006836 - Koukitu; Akinori ;   et al.
2010-01-14
Vapor phase growth method for A1-containing III-V group compound semiconductor, and method and device for producing A1-containing III-V group compound semiconductor
Grant 7,645,340 - Koukitu , et al. January 12, 2
2010-01-12
Method and apparatus for AlGan vapor phase growth
Grant 7,621,999 - Koukitu , et al. November 24, 2
2009-11-24
Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitride
Grant 7,518,216 - Koukitu , et al. April 14, 2
2009-04-14
Gallium Nitride Baseplate and Epitaxial Substrate
App 20090079036 - Koukitu; Akinori ;   et al.
2009-03-26
Gallium Nitride Substrate And Gallium Nitride Layer Formation Method
App 20080308814 - NAKAHATA; Seiji ;   et al.
2008-12-18
Method And Apparatus For Algan Vapor Phase Growth
App 20080063584 - Koukitu; Akinori ;   et al.
2008-03-13
Gallium Nitride Baseplate, Epitaxial Substrate, and Method of Forming Gallium Nitride
App 20070215982 - Koukitu; Akinori ;   et al.
2007-09-20
Vapor phase growth method for al-containing III-V group compound semiconductor, and method and device for producing al-containing IIl-V group compound semiconductor
App 20050166835 - Koukitsu, Akinori ;   et al.
2005-08-04

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