| Patent | Date |
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Carrier-assisted Method For Parting Crystalline Material Along Laser Damage Region
App 20210225652 - Donofrio; Matthew ; et al. | 2021-07-22 |
Carrier-assisted method for parting crystalline material along laser damage region
Grant 11,024,501 - Donofrio , et al. June 1, 2 | 2021-06-01 |
Carrier-assisted Method For Parting Crystalline Material Along Laser Damage Region
App 20200211850 - Donofrio; Matthew ; et al. | 2020-07-02 |
Group III nitride LED with undoped cladding layer and multiple quantum well
Grant RE46,589 - Edmond , et al. October 24, 2 | 2017-10-24 |
Group III nitride LED with undoped cladding layer
Grant RE46,588 - Edmond , et al. October 24, 2 | 2017-10-24 |
Light emitting diode (LED) arrays including direct die attach and related assemblies
Grant 9,754,926 - Donofrio , et al. September 5, 2 | 2017-09-05 |
Light emitting devices, systems, and methods
Grant 9,490,235 - Edmond , et al. November 8, 2 | 2016-11-08 |
Methods Of Performing Semiconductor Growth Using Reusable Carrier Substrates And Related Carrier Substrates
App 20160189954 - Kong; Hua-Shuang ; et al. | 2016-06-30 |
Reflective mounting substrates for light emitting diodes
Grant 9,178,121 - Edmond , et al. November 3, 2 | 2015-11-03 |
Vertical geometry InGaN LED
Grant RE45,517 - Doverspike , et al. May 19, 2 | 2015-05-19 |
Group III nitride LED with undoped cladding layer
Grant RE45,059 - Edmond , et al. August 5, 2 | 2014-08-05 |
Nickel tin bonding system for semiconductor wafers and devices
Grant 8,643,195 - Slater, Jr. , et al. February 4, 2 | 2014-02-04 |
Light emitting diode with improved light extraction
Grant 8,575,633 - Donofrio , et al. November 5, 2 | 2013-11-05 |
Conformal gel layers for light emitting diodes
Grant 8,525,190 - Donofrio , et al. September 3, 2 | 2013-09-03 |
Lamp packages
Grant D689,209 - Donofrio , et al. September 3, 2 | 2013-09-03 |
Lamp packages
Grant D689,210 - Donofrio , et al. September 3, 2 | 2013-09-03 |
External extraction light emitting diode based upon crystallographic faceted surfaces
Grant 8,357,923 - Edmond , et al. January 22, 2 | 2013-01-22 |
Conformal Gel Layers For Light Emitting Diodes And Methods Of Fabricating Same
App 20120319148 - Donofrio; Matthew ; et al. | 2012-12-20 |
Nickel tin bonding system with barrier layer for semiconductor wafers and devices
Grant 8,247,836 - Donofrio , et al. August 21, 2 | 2012-08-21 |
Light Emitting Devices, Systems, And Methods
App 20120193651 - Edmond; John A. ; et al. | 2012-08-02 |
Light Emitting Diode (led) Arrays Including Direct Die Attach And Related Assemblies
App 20120193649 - Donofrio; Matthew ; et al. | 2012-08-02 |
Nickel Tin Bonding System with Barrier Layer for Semiconductor Wafers and Devices
App 20110180839 - Donofrio; Matthew ; et al. | 2011-07-28 |
Nickel tin bonding system with barrier layer for semiconductor wafers and devices
Grant 7,910,945 - Donofrio , et al. March 22, 2 | 2011-03-22 |
Vertical geometry InGaN LED
Grant RE42,007 - Doverspike , et al. December 28, 2 | 2010-12-28 |
Modified gold-tin system with increased melting temperature for wafer bonding
Grant 7,855,459 - Slater, Jr. , et al. December 21, 2 | 2010-12-21 |
External Extraction Light Emitting Diode Based Upon Crystallographic Faceted Surfaces
App 20100276700 - EDMOND; JOHN A. ; et al. | 2010-11-04 |
External extraction light emitting diode based upon crystallographic faceted surfaces
Grant 7,791,061 - Edmond , et al. September 7, 2 | 2010-09-07 |
Light Emitting Diode with Improved Light Extraction
App 20100140636 - Donofrio; Matthew ; et al. | 2010-06-10 |
Group III nitride LED with undoped cladding layer
Grant 7,692,209 - Edmond , et al. April 6, 2 | 2010-04-06 |
Light emitting diode with metal coupling structure
Grant 7,531,840 - Edmond , et al. May 12, 2 | 2009-05-12 |
Light emitting diode with degenerate coupling structure
Grant 7,482,183 - Edmond , et al. January 27, 2 | 2009-01-27 |
Susceptor Designs for Silicon Carbide Thin Films
App 20080257262 - Kong; Hua-Shuang ; et al. | 2008-10-23 |
Nickel Tin Bonding System With Barrier Layer For Semiconductor Wafers And Devices
App 20080210971 - Donofrio; Matthew ; et al. | 2008-09-04 |
Group III Nitride Diodes on Low Index Carrier Substrates
App 20080197378 - Kong; Hua-Shuang ; et al. | 2008-08-21 |
Reflective Mounting Substrates For Light Emitting Diodes
App 20080142820 - Edmond; John A. ; et al. | 2008-06-19 |
Modified Gold-Tin System With Increased Melting Temperature for Wafer Bonding
App 20080073665 - Slater; David B. ; et al. | 2008-03-27 |
Nickel Tin Bonding System for Semiconductor Wafers and Devices
App 20080003777 - Slater; David B. ; et al. | 2008-01-03 |
Light Emitting Diode with Metal Coupling Structure
App 20070210318 - Edmond; John Adam ; et al. | 2007-09-13 |
Light Emitting Diode Wth Degenerate Coupling Structure
App 20070114541 - Edmond; John Adam ; et al. | 2007-05-24 |
Inverted light emitting diode on conductive substrate
Grant 7,170,097 - Edmond , et al. January 30, 2 | 2007-01-30 |
Group III Nitride LED with Undoped Cladding Layer
App 20060233211 - Edmond; John Adam ; et al. | 2006-10-19 |
External extraction light emitting diode based upon crystallographic faceted surfaces
App 20060186418 - Edmond; John A. ; et al. | 2006-08-24 |
Group III nitride LED with silicon carbide substrate
Grant 7,071,490 - Edmond , et al. July 4, 2 | 2006-07-04 |
Vertical geometry InGaN LED
Grant 7,034,328 - Doverspike , et al. April 25, 2 | 2006-04-25 |
Group III nitride contact structures for light emitting devices
Grant 6,987,281 - Edmond , et al. January 17, 2 | 2006-01-17 |
Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures
Grant 6,955,977 - Kong , et al. October 18, 2 | 2005-10-18 |
Group III nitride LED with silicon carbide cladding layer
Grant 6,952,024 - Edmond , et al. October 4, 2 | 2005-10-04 |
Group III nitride LED with undoped cladding layer and multiple quantum well
Grant 6,906,352 - Edmond , et al. June 14, 2 | 2005-06-14 |
Group Iii Nitride Led With Silicon Carbide Substrate
App 20050040426 - Edmond, John Adam ; et al. | 2005-02-24 |
Vertical geometry InGaN LED
App 20040232433 - Doverspike, Kathleen Marie ; et al. | 2004-11-25 |
Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
Grant 6,812,053 - Kong , et al. November 2, 2 | 2004-11-02 |
Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
Grant 6,803,602 - Kong , et al. October 12, 2 | 2004-10-12 |
Group III nitride LED with undoped cladding layer (5000.137)
Grant 6,800,876 - Edmond , et al. October 5, 2 | 2004-10-05 |
Group III nitride light emitting devices with progressively graded layers
Grant 6,784,461 - Edmond , et al. August 31, 2 | 2004-08-31 |
Group III nitride LED with silicon carbide cladding layer
App 20040159842 - Edmond, John Adam ; et al. | 2004-08-19 |
Inverted light emitting diode on conductive substrate
App 20040159843 - Edmond, John Adam ; et al. | 2004-08-19 |
Group III nitride contact structures for light emitting devices
App 20040159851 - Edmond, John Adam ; et al. | 2004-08-19 |
Single step pendeo- and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures
Grant 6,764,932 - Kong , et al. July 20, 2 | 2004-07-20 |
Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures
App 20040082150 - Kong, Hua-Shuang ; et al. | 2004-04-29 |
Light emitting devices with Group III nitride contact layer and superlattice
Grant 6,717,185 - Edmond , et al. April 6, 2 | 2004-04-06 |
Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
App 20030207518 - Kong, Hua-Shuang ; et al. | 2003-11-06 |
Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
Grant 6,630,690 - Edmond , et al. October 7, 2 | 2003-10-07 |
Light emitting devices with group III nitride contact layer and superlattice
App 20030164506 - Edmond, John Adam ; et al. | 2003-09-04 |
Group III nitride light emitting devices with progressively graded layers
App 20030164507 - Edmond, John Adam ; et al. | 2003-09-04 |
Vertical geometry InGaN LED
Grant 6,610,551 - Doverspike , et al. August 26, 2 | 2003-08-26 |
Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures
Grant 6,582,986 - Kong , et al. June 24, 2 | 2003-06-24 |
Group III nitride light emitting devices with gallium-free layers
Grant 6,534,797 - Edmond , et al. March 18, 2 | 2003-03-18 |
Susceptor designs for silicon carbide thin films
Grant 6,530,990 - Kong , et al. March 11, 2 | 2003-03-11 |
Group III nitride LED with undoped cladding layer and multiple quantum well
App 20020195606 - Edmond, John Adam ; et al. | 2002-12-26 |
Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
Grant 6,492,193 - Edmond , et al. December 10, 2 | 2002-12-10 |
Vertical geometry ingan LED
Grant 6,459,100 - Doverspike , et al. October 1, 2 | 2002-10-01 |
Vertical Geometry Ingan Led
App 20020121642 - DOVERSPIKE, KATHLEEN MARIE ; et al. | 2002-09-05 |
Single step pendeo- and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures
App 20020098693 - Kong, Hua-Shuang ; et al. | 2002-07-25 |
Group III nitride LED with undoped cladding layer (5000.137)
App 20020093020 - Edmond, John Adam ; et al. | 2002-07-18 |
Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
Grant 6,373,077 - Edmond , et al. April 16, 2 | 2002-04-16 |
Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures
App 20020022290 - Kong, Hua-Shuang ; et al. | 2002-02-21 |
Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
App 20020008241 - Edmond, John Adam ; et al. | 2002-01-24 |
Susceptor designs for silicon carbide thin films
App 20010009141 - Kong, Hua-Shuang ; et al. | 2001-07-26 |
Susceptor designs for silicon carbide thin films
Grant 6,217,662 - Kong , et al. April 17, 2 | 2001-04-17 |
Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
Grant 6,201,262 - Edmond , et al. March 13, 2 | 2001-03-13 |
Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
Grant 6,187,606 - Edmond , et al. February 13, 2 | 2001-02-13 |
Double heterojunction light emitting diode with gallium nitride active layer
Grant 6,120,600 - Edmond , et al. September 19, 2 | 2000-09-19 |
Low-strain laser structures with group III nitride active layers
Grant 5,838,706 - Edmond , et al. November 17, 1 | 1998-11-17 |
Double heterojunction light emitting diode with gallium nitride active layer
Grant 5,739,554 - Edmond , et al. April 14, 1 | 1998-04-14 |
Low-strain laser structures with group III nitride active layers
Grant 5,592,501 - Edmond , et al. January 7, 1 | 1997-01-07 |
Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
Grant 5,523,589 - Edmond , et al. June 4, 1 | 1996-06-04 |
Blue light-emitting diode with high external quantum efficiency
Grant 5,416,342 - Edmond , et al. May 16, 1 | 1995-05-16 |
Blue light-emitting diode with degenerate junction structure
Grant 5,338,944 - Edmond , et al. August 16, 1 | 1994-08-16 |
Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
Grant 5,200,022 - Kong , et al. April 6, 1 | 1993-04-06 |
Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
Grant 5,119,540 - Kong , et al. June 9, 1 | 1992-06-09 |
Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon
Grant 5,011,549 - Kong , et al. April 30, 1 | 1991-04-30 |
Method of preparing silicon carbide surfaces for crystal growth
Grant 4,946,547 - Palmour , et al. August 7, 1 | 1990-08-07 |
Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
Grant 4,912,064 - Kong , et al. March 27, 1 | 1990-03-27 |
Growth of beta-sic thin films and semiconductor devices fabricated thereon
Grant 4,912,063 - Davis , et al. March 27, 1 | 1990-03-27 |
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