loadpatents
name:-0.22033190727234
name:-0.19743514060974
name:-0.044211149215698
Ko; Chih-Hsin Patent Filings

Ko; Chih-Hsin

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ko; Chih-Hsin.The latest application filed is for "method for fabricating a strained structure and structure formed".

Company Profile
52.200.200
  • Ko; Chih-Hsin - Fongshan TW
  • Ko; Chih-Hsin - Fongshan City TW
  • KO; Chih-Hsin - Hsinchu TW
  • Ko; Chih-Hsin - Kaohsiung County TW
  • Ko; Chih-Hsin - Kaohsiung TW
  • Ko; Chih-Hsin - Hsin-Chu TW
  • - Fongshan TW
  • Ko; Chih-Hsin - Fongshang N/A TW
  • Ko; Chih-Hsin - Fongshang City TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor structures and methods with high mobility and high energy bandgap materials
Grant 11,437,517 - Wu , et al. September 6, 2
2022-09-06
Method of manufacturing a semiconductor device
Grant 11,404,322 - Tsai , et al. August 2, 2
2022-08-02
Semiconductor device and manufacturing method therefore
Grant 11,393,713 - Wann , et al. July 19, 2
2022-07-19
Wrap-around contact on FinFET
Grant 11,362,000 - Wang , et al. June 14, 2
2022-06-14
Method for Fabricating a Strained Structure and Structure Formed
App 20220173245 - Lee; Tsung-Lin ;   et al.
2022-06-02
Method for fabricating a strained structure and structure formed
Grant 11,251,303 - Lee , et al. February 15, 2
2022-02-15
Method Of Manufacturing Semiconductor Devices And Semiconductor Devices
App 20220045190 - LEE; Yi-Jing ;   et al.
2022-02-10
Semiconductor arrangement
Grant 11,177,368 - Chen , et al. November 16, 2
2021-11-16
Method Of Manufacturing A Semiconductor Device
App 20210351080 - TSAI; Chun Hsiung ;   et al.
2021-11-11
Integrated Circuit Fin Layout Method
App 20210342514 - HUANG; Po-Hsiang ;   et al.
2021-11-04
Semiconductor structure having field plate and associated fabricating method
Grant 11,158,739 - Cheng , et al. October 26, 2
2021-10-26
Method of forming MOSFET structure
Grant 11,127,837 - Fu , et al. September 21, 2
2021-09-21
Wrap-Around Contact on FinFET
App 20210272849 - Wang; Sung-Li ;   et al.
2021-09-02
Integrated circuit fin layout method, system, and structure
Grant 11,080,453 - Huang , et al. August 3, 2
2021-08-03
Semiconductor Structures and Methods of Forming Thereof
App 20210193837 - Wu; Cheng-Hsien ;   et al.
2021-06-24
Method for fabricating a strained structure and structure formed
Grant 10,998,442 - Lee , et al. May 4, 2
2021-05-04
Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same
Grant 10,978,451 - Wann , et al. April 13, 2
2021-04-13
(110) surface orientation for reducing fermi-level-pinning between high-K dielectric and group III-V compound semiconductor device
Grant 10,964,817 - Cheng , et al. March 30, 2
2021-03-30
FINFET Device Having a Channel Defined in a Diamond-Like Shape Semiconductor Structure
App 20210036131 - Lin; You-Ru ;   et al.
2021-02-04
Method Of Metal Gate Formation And Structures Formed By The Same
App 20210028069 - LEE; YI-JING ;   et al.
2021-01-28
III-V compound semiconductors in isolation regions and method forming same
Grant 10,879,065 - Ko , et al. December 29, 2
2020-12-29
Capacitor having multiple graphene structures
Grant 10,854,708 - Jou , et al. December 1, 2
2020-12-01
Method for Fabricating a Strained Structure and Structure Formed
App 20200365736 - Lee; Tsung-Lin ;   et al.
2020-11-19
Semiconductor Device And Manufacturing Method Thereof
App 20200343339 - TSAI; Chun Hsiung ;   et al.
2020-10-29
Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials
App 20200328307 - Wu; Cheng-Hsien ;   et al.
2020-10-15
Method of metal gate formation and structures formed by the same
Grant 10,804,163 - Lee , et al. October 13, 2
2020-10-13
FinFET device having a channel defined in a diamond-like shape semiconductor structure
Grant 10,797,162 - Lin , et al. October 6, 2
2020-10-06
(110) surface orientation for reducing fermi-level-pinning between high-K dielectric and group III-V compound semiconductor device
Grant 10,770,588 - Cheng , et al. Sep
2020-09-08
Wrap-Around Contact on FinFET
App 20200258784 - A1
2020-08-13
Semiconductor structures and methods with high mobility and high energy bandgap materials
Grant 10,727,351 - Wu , et al.
2020-07-28
FinFET semiconductor device with germanium diffusion over silicon fins
Grant 10,665,674 - Lee , et al.
2020-05-26
Wrap-around contact on FinFET
Grant 10,651,091 - Wang , et al.
2020-05-12
Method Of Metal Gate Formation And Structures Formed By The Same
App 20200135589 - LEE; YI-JING ;   et al.
2020-04-30
Integrated Circuit Fin Layout Method, System, And Structure
App 20200134122 - HUANG; Po-Hsiang ;   et al.
2020-04-30
Method for Fabricating a Strained Structure and Structure Formed
App 20200119196 - Lee; Tsung-Lin ;   et al.
2020-04-16
Complimentary Metal-Oxide-Semiconductor (CMOS) with Low Contact Resistivity and Method of Forming Same
App 20200119013 - Wann; Clement Hsingjen ;   et al.
2020-04-16
FinFET devices with unique shape and the fabrication thereof
Grant 10,622,261 - Lee , et al.
2020-04-14
Capacitor Having Multiple Graphene Structures
App 20200083318 - Jou; Chewn-Pu ;   et al.
2020-03-12
(110) Surface Orientation for Reducing Fermi-Level-Pinning Between High-K Dielectric and Group Iii-V Compound Semiconductor Devi
App 20200075756 - Cheng; Chao-Ching ;   et al.
2020-03-05
Method of Forming MOSFET Structure
App 20200058765 - Fu; Ching-Feng ;   et al.
2020-02-20
FinFET Semiconductor Device with Germanium Diffusion Over Silicon Fins
App 20200035789 - Lee; Yi-Jing ;   et al.
2020-01-30
Method for fabricating a strained structure and structure formed
Grant 10,510,887 - Lee , et al. Dec
2019-12-17
Capacitor having multiple graphene structures
Grant 10,510,827 - Jou , et al. Dec
2019-12-17
Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same
Grant 10,510,754 - Wann , et al. Dec
2019-12-17
FinFET semiconductor device with germanium diffusion over silicon fins
Grant 10,504,993 - Lee , et al. Dec
2019-12-10
Method of forming MOSFET structure
Grant 10,461,170 - Fu , et al. Oc
2019-10-29
Wrap-Around Contact on FinFET
App 20190252261 - Wang; Sung-Li ;   et al.
2019-08-15
Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials
App 20190252546 - Wu; Cheng-Hsien ;   et al.
2019-08-15
Semiconductor Arrangement
App 20190245061 - CHEN; Wei-Chieh ;   et al.
2019-08-08
Semiconductor Structure And Associated Fabricating Method
App 20190189793 - CHENG; CHIH-CHANG ;   et al.
2019-06-20
Source/drain profile for FinFeT
Grant 10,326,021 - Ma , et al.
2019-06-18
Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same
Grant 10,304,826 - Wann , et al.
2019-05-28
FinFET Devices with Unique Shape and the Fabrication Thereof
App 20190122939 - Lee; Yi-Jing ;   et al.
2019-04-25
Wrap-around contact on FinFET
Grant 10,269,649 - Wang , et al.
2019-04-23
Semiconductor structures and methods with high mobility and high energy bandgap materials
Grant 10,269,969 - Wu , et al.
2019-04-23
Gradient ternary or quaternary multiple-gate transistor
Grant 10,269,970 - Ko , et al.
2019-04-23
FINFET Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure
App 20190115453 - Lin; You-Ru ;   et al.
2019-04-18
Method of semiconductor arrangement formation
Grant 10,263,097 - Chen , et al.
2019-04-16
Multiple gate field effect transistors having oxygen-scavenged gate stack
Grant 10,263,091 - Yeo , et al.
2019-04-16
Complimentary Metal-Oxide-Semiconductor (CMOS) with Low Contact Resistivity and Method of Forming Same
App 20190096885 - Wann; Clement Hsingjen ;   et al.
2019-03-28
Semiconductor structure having field plate and associated fabricating method
Grant 10,205,024 - Cheng , et al. Feb
2019-02-12
FinFET devices with unique fin shape and the fabrication thereof
Grant 10,170,375 - Lee , et al. J
2019-01-01
FinFET device having a channel defined in a diamond-like shape semiconductor structure
Grant 10,164,062 - Lin , et al. Dec
2018-12-25
FinFETs with strained well regions
Grant 10,164,023 - Lee , et al. Dec
2018-12-25
FinFETs with strained well regions
Grant 10,158,015 - Lee , et al. Dec
2018-12-18
Capacitor Having a Graphene Structure, Semiconductor Device Including the Capacitor and Method of Forming the Same
App 20180350898 - Jou; Chewn-Pu ;   et al.
2018-12-06
Semiconductor structure and the manufacturing method thereof
Grant 10,115,826 - Lee , et al. October 30, 2
2018-10-30
High-mobility multiple-gate transistor with improved on-to-off current ratio
Grant 10,109,748 - Ko , et al. October 23, 2
2018-10-23
Method of forming strained structures of semiconductor devices
Grant 10,096,710 - Wu , et al. October 9, 2
2018-10-09
Source/Drain Profile for FinFET
App 20180277680 - Ma; Ta-Chun ;   et al.
2018-09-27
Apparatus and method for FinFETs
Grant 10,084,069 - Lee , et al. September 25, 2
2018-09-25
Capacitor having a graphene structure, semiconductor device including the capacitor and method of forming the same
Grant 10,050,104 - Jou , et al. August 14, 2
2018-08-14
Wrap-Around Contact on FinFET
App 20180219077 - Wang; Sung-Li ;   et al.
2018-08-02
Isolation structure of semiconductor device
Grant 10,026,641 - Chen , et al. July 17, 2
2018-07-17
Growing a III-V layer on silicon using aligned nano-scale patterns
Grant 10,020,189 - Ko , et al. July 10, 2
2018-07-10
Growing III-V Compound Semiconductors from Trenches Filled with Intermediate Layers
App 20180151359 - Ko; Chih-Hsin ;   et al.
2018-05-31
Source/drain profile for FinFET
Grant 9,985,131 - Ma , et al. May 29, 2
2018-05-29
Wrap-around contact on FinFET
Grant 9,941,367 - Wang , et al. April 10, 2
2018-04-10
FinFETs with Strained Well Regions
App 20180083103 - Lee; Yi-Jing ;   et al.
2018-03-22
Apparatus and method for FinFETs
Grant 9,922,828 - Lee , et al. March 20, 2
2018-03-20
FinFET low resistivity contact formation method
Grant 9,899,521 - Wang , et al. February 20, 2
2018-02-20
Silicon germanium source/drain regions
Grant 9,887,290 - Tsai , et al. February 6, 2
2018-02-06
Isolation Structure of Semiconductor Device
App 20180033678 - Chen; Shu-Han ;   et al.
2018-02-01
Method Of Semiconductor Arrangement Formation
App 20180026116 - CHEN; Wei-Chieh ;   et al.
2018-01-25
Growing III-V compound semiconductors from trenches filled with intermediate layers
Grant 9,870,920 - Ko , et al. January 16, 2
2018-01-16
Gradient Ternary or Quaternary Multiple-Gate Transistor
App 20180006156 - Ko; Chih-Hsin ;   et al.
2018-01-04
FinFETs with strained well regions
Grant 9,859,380 - Lee , et al. January 2, 2
2018-01-02
Method Of Forming Strained Structures Of Semiconductor Devices
App 20170352760 - WU; Cheng-Hsien ;   et al.
2017-12-07
FinFETs with Strained Well Regions
App 20170352596 - Lee; Yi-Jing ;   et al.
2017-12-07
Channel epitaxial regrowth flow (CRF)
Grant 9,831,322 - Fu , et al. November 28, 2
2017-11-28
Apparatus and Method for FinFETs
App 20170309730 - Lee; Yi-Jing ;   et al.
2017-10-26
Isolation structure of semiconductor device
Grant 9,786,543 - Chen , et al. October 10, 2
2017-10-10
Methods for forming semiconductor regions in trenches
Grant 9,780,174 - Lee , et al. October 3, 2
2017-10-03
Method of semiconductor arrangement formation
Grant 9,773,889 - Chen , et al. September 26, 2
2017-09-26
Gradient ternary or quaternary multiple-gate transistor
Grant 9,768,305 - Ko , et al. September 19, 2
2017-09-19
Method of forming strained structures of semiconductor devices
Grant 9,748,388 - Wu , et al. August 29, 2
2017-08-29
FinFETs with strained well regions
Grant 9,748,143 - Lee , et al. August 29, 2
2017-08-29
Semiconductor Structure And Associated Fabricating Method
App 20170229570 - CHENG; CHIH-CHANG ;   et al.
2017-08-10
Apparatus and method for FinFETs
Grant 9,722,051 - Lee , et al. August 1, 2
2017-08-01
Growing a III-V Layer on Silicon using Aligned Nano-Scale Patterns
App 20170194141 - Ko; Chih-Hsin ;   et al.
2017-07-06
Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials
App 20170186871 - Wu; Cheng-Hsien ;   et al.
2017-06-29
FinFETs with Strained Well Regions
App 20170179291 - Lee; Yi-Jing ;   et al.
2017-06-22
High-Mobility Multiple-Gate Transistor with Improved On-to-Off Current Ratio
App 20170170335 - Ko; Chih-Hsin ;   et al.
2017-06-15
CMOS devices with Schottky source and drain regions
Grant 9,673,105 - Ko , et al. June 6, 2
2017-06-06
Method for Fabricating a Strained Structure and Structure Formed
App 20170148917 - LEE; TSUNG-LIN ;   et al.
2017-05-25
Multiple gate field-effect transistors having oxygen-scavenged gate stack
Grant 9,659,780 - Yeo , et al. May 23, 2
2017-05-23
Apparatus and Method for FinFETs
App 20170133225 - Lee; Yi-Jing ;   et al.
2017-05-11
Finfet Devices With Unique Fin Shape And The Fabrication Thereof
App 20170125307 - Lee; Yi-Jing ;   et al.
2017-05-04
FinFET Semiconductor Device with Germanium Diffusion Over Silicon Fins
App 20170104067 - Lee; Yi-Jing ;   et al.
2017-04-13
Multiple Gate Field Effect Transistors Having Oxygen-Scavenged Gate Stack
App 20170092732 - Yeo; Yee-Chia ;   et al.
2017-03-30
Semiconductor Structure And The Manufacturing Method Thereof
App 20170084746 - LEE; YI-JING ;   et al.
2017-03-23
FinFETs with strained well regions
Grant 9,601,342 - Lee , et al. March 21, 2
2017-03-21
Growing a III-V layer on silicon using aligned nano-scale patterns
Grant 9,601,328 - Ko , et al. March 21, 2
2017-03-21
Semiconductor device with enhanced strain
Grant 9,601,594 - Wu , et al. March 21, 2
2017-03-21
Semiconductor structures and methods with high mobility and high energy bandgap materials
Grant 9,595,614 - Wu , et al. March 14, 2
2017-03-14
FINFET Device Having a Channel Defined in a Diamond-Like Shape Semiconductor Structure
App 20170069736 - Lin; You-Ru ;   et al.
2017-03-09
High-mobility multiple-gate transistor with improved on-to-off current ratio
Grant 9,590,068 - Ko , et al. March 7, 2
2017-03-07
Inverted trapezoidal recess for epitaxial growth
Grant 9,583,379 - Ko , et al. February 28, 2
2017-02-28
Multiple gate field-effect transistors having oxygen-scavenged gate stack
Grant 9,564,489 - Yeo , et al. February 7, 2
2017-02-07
Method for fabricating a strained structure and structure formed
Grant 9,564,529 - Lee , et al. February 7, 2
2017-02-07
Apparatus and method for FinFETs
Grant 9,559,099 - Lee , et al. January 31, 2
2017-01-31
Semiconductor structure and the manufacturing method thereof
Grant 9,553,012 - Lee , et al. January 24, 2
2017-01-24
Semiconductor device with a strained region and method of making
Grant 9,553,149 - Lee , et al. January 24, 2
2017-01-24
FinFET devices with unique fin shape and the fabrication thereof
Grant 9,548,303 - Lee , et al. January 17, 2
2017-01-17
Multi-Gate Field Effect Transistors Having Oxygen-Scavenged Gate Stack
App 20160379831 - Yeo; Yee-Chia ;   et al.
2016-12-29
Multiple Gate Field-effect Transistors Having Oxygen-scavenged Gate Stack
App 20160380056 - Yeo; Yee-Chia ;   et al.
2016-12-29
FinFET semiconductor device with germanium diffusion over silicon fins
Grant 9,530,776 - Lee , et al. December 27, 2
2016-12-27
Strained MOS device and methods for forming the same
Grant 9,530,865 - Kuan , et al. December 27, 2
2016-12-27
FinFETs with Strained Well Regions
App 20160372579 - Lee; Yi-Jing ;   et al.
2016-12-22
Device having source/drain regions regrown from un-relaxed silicon layer
Grant 9,508,849 - Wann , et al. November 29, 2
2016-11-29
(110) Surface Orientation for Reducing Fermi-Level-Pinning Between High-K Dielectric and Group Iii-V Compound Semiconductor Device
App 20160343846 - Cheng; Chao-Ching ;   et al.
2016-11-24
Wrap-Around Contact on FinFET
App 20160343815 - Wang; Sung-Li ;   et al.
2016-11-24
FINFET device having a channel defined in a diamond-like shape semiconductor structure
Grant 9,502,539 - Lin , et al. November 22, 2
2016-11-22
Channel Epitaxial Regrowth Flow (CRF)
App 20160300931 - Fu; Ching-Feng ;   et al.
2016-10-13
FinFETs with strained well regions
Grant 9,455,320 - Lee , et al. September 27, 2
2016-09-27
FinFET having superlattice stressor
Grant 9,450,098 - Lee , et al. September 20, 2
2016-09-20
Wrap-around contact
Grant 9,443,769 - Wang , et al. September 13, 2
2016-09-13
Method Of Forming Mosfet Structure
App 20160247896 - FU; CHING-FENG ;   et al.
2016-08-25
(110) surface orientation for reducing fermi-level-pinning between high-K dielectric and group III-V compound semiconductor substrate
Grant 9,406,518 - Cheng , et al. August 2, 2
2016-08-02
Channel epitaxial regrowth flow (CRF)
Grant 9,391,203 - Fu , et al. July 12, 2
2016-07-12
CMOS devices with reduced leakage and methods of forming the same
Grant 9,390,982 - Ko , et al. July 12, 2
2016-07-12
FinFET Low Resistivity Contact Formation Method
App 20160190321 - Wang; Sung-Li ;   et al.
2016-06-30
Semiconductor device and method of forming the same
Grant 9,373,549 - Wann , et al. June 21, 2
2016-06-21
Method Of Forming Strained Structures Of Semiconductor Devices
App 20160155801 - WU; Cheng-Hsien ;   et al.
2016-06-02
Method of forming MOSFET structure
Grant 9,343,412 - Fu , et al. May 17, 2
2016-05-17
Method of making semiconductor device
Grant 9,337,304 - Wu , et al. May 10, 2
2016-05-10
CMOS Devices with Reduced Leakage and Methods of Forming the Same
App 20160086862 - Ko; Chih-Hsin ;   et al.
2016-03-24
Isolation Structure of Semiconductor Device
App 20160086840 - Chen; Shu-Han ;   et al.
2016-03-24
FinFET low resistivity contact formation method
Grant 9,287,138 - Wang , et al. March 15, 2
2016-03-15
Inverted Trapezoidal Recess for Epitaxial Growth
App 20160064271 - Ko; Chih-Hsin ;   et al.
2016-03-03
Structure and method and FinFET device
Grant 9,276,117 - Lee , et al. March 1, 2
2016-03-01
Structure and Method and FinFET Device
App 20160056277 - Lee; Yi-Jing ;   et al.
2016-02-25
Capacitor Having A Graphene Structure, Semiconductor Device Including The Capacitor And Method Of Forming The Same
App 20160056228 - JOU; Chewn-Pu ;   et al.
2016-02-25
Growing III-V Compound Semiconductors from Trenches Filled with Intermediate Layers
App 20160049299 - Ko; Chih-Hsin ;   et al.
2016-02-18
Strained structures of semiconductor devices
Grant 9,246,004 - Wu , et al. January 26, 2
2016-01-26
Method Of Semiconductor Arrangement Formation
App 20160020302 - Chen; Wei-Chieh ;   et al.
2016-01-21
Apparatus and Method for FinFETs
App 20150380527 - Lee; Yi-Jing ;   et al.
2015-12-31
FinFETs with Strained Well Regions
App 20150380528 - Lee; Yi-Jing ;   et al.
2015-12-31
Method For Fabricating A Strained Structure And Structure Formed
App 20150380554 - LEE; Tsung-Lin ;   et al.
2015-12-31
CMOS devices with reduced leakage and methods of forming the same
Grant 9,224,734 - Lee , et al. December 29, 2
2015-12-29
Growing III-V compound semiconductors from trenches filled with intermediate layers
Grant 9,209,023 - Wann , et al. December 8, 2
2015-12-08
Isolation structure of semiconductor device
Grant 9,209,066 - Chen , et al. December 8, 2
2015-12-08
Methods for forming semiconductor regions in trenches
Grant 9,196,709 - Lee , et al. November 24, 2
2015-11-24
Inverted trapezoidal recess for epitaxial growth
Grant 9,184,050 - Wann , et al. November 10, 2
2015-11-10
Methods for Forming Semiconductor Regions in Trenches
App 20150318382 - Lee; Yi-Jing ;   et al.
2015-11-05
Reverse tone STI formation and epitaxial growth of semiconductor between STI regions
Grant 9,177,792 - Chang , et al. November 3, 2
2015-11-03
Source/Drain Profile for FinFET
App 20150311340 - Ma; Ta-Chun ;   et al.
2015-10-29
Wrap-Around Contact
App 20150303118 - Wang; Sung-Li ;   et al.
2015-10-22
FinFETs with strained well regions
Grant 9,159,824 - Lee , et al. October 13, 2
2015-10-13
Apparatus and method for FinFETs
Grant 9,153,582 - Lee , et al. October 6, 2
2015-10-06
Method Of Making Semiconductor Device
App 20150279965 - WU; Cheng-Hsien ;   et al.
2015-10-01
Method for fabricating a strained structure
Grant 9,147,594 - Lee , et al. September 29, 2
2015-09-29
FinFETs with Strained Well Regions
App 20150263093 - Lee; Yi-Jing ;   et al.
2015-09-17
FinFET Devices with Unique Fin Shape and the Fabrication Thereof
App 20150263003 - Lee; Yi-Jing ;   et al.
2015-09-17
Multi-layer semiconductor device structures with different channel materials
Grant 9,123,546 - Lin , et al. September 1, 2
2015-09-01
Methods for forming semiconductor regions in trenches
Grant 9,123,633 - Lee , et al. September 1, 2
2015-09-01
Method Of Forming Mosfet Structure
App 20150228483 - FU; CHING-FENG ;   et al.
2015-08-13
Source/drain profile for FinFET
Grant 9,105,654 - Ma , et al. August 11, 2
2015-08-11
FinFET Semiconductor Device with Germanium Diffusion Over Silicon Fins
App 20150206875 - Lee; Yi-Jing ;   et al.
2015-07-23
FinFETs with strained well regions
Grant 9,087,902 - Lee , et al. July 21, 2
2015-07-21
Contact structure of semiconductor device
Grant 9,076,819 - Wu , et al. July 7, 2
2015-07-07
FinFET Having Superlattice Stressor
App 20150162447 - Lee; Yi-Jing ;   et al.
2015-06-11
CMOS Devices with Reduced Leakage and Methods of Forming the Same
App 20150145002 - Lee; Yi-Jing ;   et al.
2015-05-28
In-Situ Doping of Arsenic for Source and Drain Epitaxy
App 20150137198 - Tsai; Ji-Yin ;   et al.
2015-05-21
Semiconductor Device With A Strained Region And Method Of Making
App 20150129979 - Lee; Yi-Jing ;   et al.
2015-05-14
Multi-layer Semiconductor Device Structures With Different Channel Materials
App 20150129891 - LIN; YI-TANG ;   et al.
2015-05-14
Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials
App 20150123144 - Wu; Cheng-Hsien ;   et al.
2015-05-07
Source/drain re-growth for manufacturing III-V based transistors
Grant 9,006,788 - Ko , et al. April 14, 2
2015-04-14
Channel Epitaxial Regrowth Flow (CRF)
App 20150097242 - Fu; Ching-Feng ;   et al.
2015-04-09
FinFET having superlattice stressor
Grant 8,994,002 - Lee , et al. March 31, 2
2015-03-31
Semiconductor Structure And The Manufacturing Method Thereof
App 20150076558 - LEE; YI-JING ;   et al.
2015-03-19
High-Mobility Multiple-Gate Transistor with Improved On-to-Off Current Ratio
App 20150072495 - Ko; Chih-Hsin ;   et al.
2015-03-12
Semiconductor structures and methods with high mobility and high energy bandgap materials
Grant 8,969,156 - Wu , et al. March 3, 2
2015-03-03
In-situ doping of arsenic for source and drain epitaxy
Grant 8,962,400 - Tsai , et al. February 24, 2
2015-02-24
FinFET Low Resistivity Contact Formation Method
App 20150041854 - Wang; Sung-Li ;   et al.
2015-02-12
Semiconductor Device And Method Of Forming The Same
App 20150017768 - Wann; Clement Hsingjen ;   et al.
2015-01-15
FINFET Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure
App 20150011068 - Lin; You-Ru ;   et al.
2015-01-08
High-mobility multiple-gate transistor with improved on-to-off current ratio
Grant 8,927,371 - Ko , et al. January 6, 2
2015-01-06
Channel epitaxial regrowth flow (CRF)
Grant 8,927,352 - Fu , et al. January 6, 2
2015-01-06
Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials
App 20140357049 - Wu; Cheng-Hsien ;   et al.
2014-12-04
Semiconductor device having SiGe substrate, interfacial layer and high K dielectric layer
Grant 8,878,302 - Cheng , et al. November 4, 2
2014-11-04
Semiconductor Devices and Methods of Manufacture Thereof
App 20140312431 - Tsai; Ji-Yin ;   et al.
2014-10-23
Semiconductor devices and methods of manufacture thereof
Grant 8,866,188 - Tsai , et al. October 21, 2
2014-10-21
Apparatus and Method for FinFETs
App 20140284726 - Lee; Yi-Jing ;   et al.
2014-09-25
FinFET device having a channel defined in a diamond-like shape semiconductor structure
Grant 8,841,701 - Lin , et al. September 23, 2
2014-09-23
Semiconductor structures and methods with high mobility and high energy bandgap materials
Grant 8,836,016 - Wu , et al. September 16, 2
2014-09-16
FinFETs with Strained Well Regions
App 20140252469 - Lee; Yi-Jing ;   et al.
2014-09-11
Channel Epitaxial Regrowth Flow (CRF)
App 20140252488 - Fu; Ching-Feng ;   et al.
2014-09-11
Isolation Structure Of Semiconductor Device
App 20140246695 - Chen; Shu-Han ;   et al.
2014-09-04
FinFETs with Strained Well Regions
App 20140239402 - Lee; Yi-Jing ;   et al.
2014-08-28
Method for epitaxial re-growth of semiconductor region
Grant 8,815,712 - Wan , et al. August 26, 2
2014-08-26
Source/drain engineering of devices with high-mobility channels
Grant 8,816,391 - Ko , et al. August 26, 2
2014-08-26
Growing III-V Compound Semiconductors from Trenches Filled with Intermediate Layers
App 20140235040 - Wann; Clement Hsingjen ;   et al.
2014-08-21
Methods of manufacturing semiconductor devices including use of a protective material
Grant 8,809,202 - Weng , et al. August 19, 2
2014-08-19
Methods for Forming Semiconductor Regions in Trenches
App 20140217499 - Lee; Yi-Jing ;   et al.
2014-08-07
Methods for Forming Semiconductor Regions in Trenches
App 20140220751 - Lee; Yi-Jing ;   et al.
2014-08-07
Apparatus and Method for FinFETs
App 20140220753 - Lee; Yi-Jing ;   et al.
2014-08-07
Contact Structure Of Semiconductor Device
App 20140206167 - WU; Cheng-Hsien ;   et al.
2014-07-24
CMOS FinFET device
Grant 8,786,019 - Wu , et al. July 22, 2
2014-07-22
Semiconductor devices and methods of manufacture thereof
Grant 8,785,285 - Tsai , et al. July 22, 2
2014-07-22
Complimentary Metal-Oxide-Semiconductor (CMOS) With Low Contact Resistivity and Method of Forming Same
App 20140183645 - Wann; Clement Hsingjen ;   et al.
2014-07-03
Semiconductor device and method of forming the same
Grant 8,759,920 - Wann , et al. June 24, 2
2014-06-24
Growing III-V compound semiconductors from trenches filled with intermediate layers
Grant 8,759,203 - Wann , et al. June 24, 2
2014-06-24
Semiconductor Device Having SiGe Substrate, Interfacial Layer and High K Dielectric Layer
App 20140151819 - Cheng; Chao-Ching ;   et al.
2014-06-05
Apparatus and method for FinFETs
Grant 8,742,509 - Lee , et al. June 3, 2
2014-06-03
Device Having Source/Drain Regions Regrown from Un-Relaxed Silicon Layer
App 20140138742 - Wann; Clement Hsingjen ;   et al.
2014-05-22
Reverse tone STI formation
Grant 8,728,906 - Chang , et al. May 20, 2
2014-05-20
High-Mobility Multiple-Gate Transistor with Improved On-to-Off Current Ratio
App 20140134815 - Ko; Chih-Hsin ;   et al.
2014-05-15
Contact structure of semiconductor device
Grant 8,716,765 - Wu , et al. May 6, 2
2014-05-06
Reverse Tone STI Formation
App 20140099771 - Chang; Kai-Tai ;   et al.
2014-04-10
Reverse Tone STI Formation
App 20140099779 - Chang; Kai-Tai ;   et al.
2014-04-10
CMOS Devices with Schottky Source and Drain Regions
App 20140094008 - Ko; Chih-Hsin ;   et al.
2014-04-03
High-mobility multiple-gate transistor with improved on-to-off current ratio
Grant 8,674,341 - Ko , et al. March 18, 2
2014-03-18
Reducing source/drain resistance of III-V based transistors
Grant 8,674,408 - Ko , et al. March 18, 2
2014-03-18
Source/Drain Re-Growth for Manufacturing III-V Based Transistors
App 20140070276 - Ko; Chih-Hsin ;   et al.
2014-03-13
MOCVD for Growing III-V Compound Semiconductors on Silicon Substrates
App 20140033981 - Wann; Clement Hsingjen ;   et al.
2014-02-06
Methods for epitaxially growing active regions between STI regions
Grant 8,629,040 - Chang , et al. January 14, 2
2014-01-14
Fin structure for high mobility multiple-gate transistor
Grant 8,629,478 - Ko , et al. January 14, 2
2014-01-14
Method for forming antimony-based FETs monolithically
Grant 8,629,012 - Lin , et al. January 14, 2
2014-01-14
FinFET design and method of fabricating same
Grant 08618556 -
2013-12-31
Source/drain re-growth for manufacturing III-V based transistors
Grant 8,617,976 - Ko , et al. December 31, 2
2013-12-31
Source/drain re-growth for manufacturing III-V based transistors
Grant 08617976 -
2013-12-31
FinFET design and method of fabricating same
Grant 8,618,556 - Wu , et al. December 31, 2
2013-12-31
Re-growing source/drain regions from un-relaxed silicon layer
Grant 8,609,518 - Wann , et al. December 17, 2
2013-12-17
MOCVD for growing III-V compound semiconductors on silicon substrates
Grant 8,609,517 - Wann , et al. December 17, 2
2013-12-17
Strained MOS Device and Methods for Forming the Same
App 20130323900 - Kuan; Ta-Ming ;   et al.
2013-12-05
Semiconductor Device and Method of Forming the Same
App 20130320452 - Wann; Clement Hsingjen ;   et al.
2013-12-05
MOS devices having elevated source/drain regions
Grant 8,569,837 - Ko , et al. October 29, 2
2013-10-29
Isolation structure for strained channel transistors
Grant 8,569,146 - Ko , et al. October 29, 2
2013-10-29
Method For Fabricating A Strained Structure
App 20130264643 - LEE; Tsung-Lin ;   et al.
2013-10-10
Cmos Finfet Device And Method Of Forming The Same
App 20130256799 - Wu; Cheng-Hsien ;   et al.
2013-10-03
Contact Structure Of Semiconductor Device
App 20130248927 - WU; Cheng-Hsien ;   et al.
2013-09-26
Source/Drain Profile for FinFET
App 20130248948 - Ma; Ta-Chun ;   et al.
2013-09-26
Reducing Source/Drain Resistance of III-V Based Transistors
App 20130248929 - Ko; Chih-Hsin ;   et al.
2013-09-26
FinFET Having Superlattice Stressor
App 20130240836 - Lee; Yi-Jing ;   et al.
2013-09-19
Strained MOS device and methods for forming the same
Grant 8,536,619 - Kuan , et al. September 17, 2
2013-09-17
Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials
App 20130234147 - Wu; Cheng-Hsien ;   et al.
2013-09-12
Semiconductor Devices and Methods of Manufacture Thereof
App 20130234203 - Tsai; Ji-Yin ;   et al.
2013-09-12
Apparatus and Method for FinFETs
App 20130228875 - Lee; Yi-Jing ;   et al.
2013-09-05
Semiconductor Device Manufacturing Methods
App 20130210212 - Weng; Chih-Hui ;   et al.
2013-08-15
Method for fabricating a strained structure
Grant 8,497,528 - Lee , et al. July 30, 2
2013-07-30
Method of forming CMOS FinFET device
Grant 8,486,770 - Wu , et al. July 16, 2
2013-07-16
Method of Forming CMOS FinFET Device
App 20130168771 - Wu; Cheng-Hsien ;   et al.
2013-07-04
Methods for Semiconductor Regrowth
App 20130171792 - Wan; Cheng-Tien ;   et al.
2013-07-04
Reducing source/drain resistance of III-V based transistors
Grant 8,455,860 - Ko , et al. June 4, 2
2013-06-04
Formation of III-V based devices on semiconductor substrates
Grant 8,455,929 - Ko , et al. June 4, 2
2013-06-04
(110) Surface Orientation For Reducing Fermi-level-pinning Between High-k Dielectric And Group Iii-v Compound Semiconductor Substrate
App 20130126985 - Cheng; Chao-Ching ;   et al.
2013-05-23
Reverse Tone STI Formation
App 20130122686 - Chang; Kai-Tai ;   et al.
2013-05-16
Strained Structures Of Semiconductor Devices
App 20130119370 - WU; Cheng-Hsien ;   et al.
2013-05-16
Semiconductor Device With Enhanced Strain
App 20130119405 - Wu; Cheng-Hsien ;   et al.
2013-05-16
CMOS devices with Schottky source and drain regions
Grant 8,426,298 - Ko , et al. April 23, 2
2013-04-23
Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces
Grant 8,426,890 - Wu , et al. April 23, 2
2013-04-23
Finfet Device Having A Channel Defined In A Diamond-like Shape Semiconductor Structure
App 20130049068 - Lin; You-Ru ;   et al.
2013-02-28
Re-growing Source/Drain Regions from Un-Relaxed Silicon Layer
App 20130020612 - Wann; Clement Hsingjen ;   et al.
2013-01-24
In-Situ Doping of Arsenic for Source and Drain Epitaxy
App 20130011983 - Tsai; Ji-Yin ;   et al.
2013-01-10
Using Hexachlorodisilane as a Silicon Precursor for Source/Drain Epitaxy
App 20130011984 - Wang; Kang-Wei ;   et al.
2013-01-10
Finfet Design And Method Of Fabricating Same
App 20130001591 - Wu; Cheng-Hsien ;   et al.
2013-01-03
Method for Forming Antimony-Based FETs Monolithically
App 20120329254 - Lin; Heng-Kuang ;   et al.
2012-12-27
CMOS structure with multiple spacers
Grant 8,299,508 - Hsieh , et al. October 30, 2
2012-10-30
Method for forming antimony-based FETs monolithically
Grant 8,253,167 - Lin , et al. August 28, 2
2012-08-28
Semiconductor Device And Manufacturing Method With Improved Epitaxial Quality Of Iii-v Compound On Silicon Surfaces
App 20120211803 - WU; Cheng-Hsien ;   et al.
2012-08-23
Epitaxial growth of III-V compound semiconductors on silicon surfaces
Grant 8,242,540 - Wann , et al. August 14, 2
2012-08-14
Methods for forming a transistor with a strained channel
Grant 8,236,658 - Kuan , et al. August 7, 2
2012-08-07
Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces
Grant 8,183,134 - Wu , et al. May 22, 2
2012-05-22
Semiconductor Device And Manufacturing Method With Improved Epitaxial Quality Of Iii-v Compound On Silicon Surfaces
App 20120094467 - WU; Cheng-Hsien ;   et al.
2012-04-19
Semiconductor device and a method of fabricating the device
Grant 8,154,107 - Ke , et al. April 10, 2
2012-04-10
Inverted Trapezoidal Recess for Epitaxial Growth
App 20120025201 - Wann; Clement Hsingjen ;   et al.
2012-02-02
Formation of III-V Based Devices on Semiconductor Substrates
App 20120001239 - Ko; Chih-Hsin ;   et al.
2012-01-05
Isolation spacer for thin SOI devices
Grant 8,084,305 - Ko , et al. December 27, 2
2011-12-27
MOCVD for Growing III-V Compound Semiconductors on Silicon Substrates
App 20110306179 - Wann; Clement Hsingjen ;   et al.
2011-12-15
Epitaxial Growth of III-V Compound Semiconductors on Silicon Surfaces
App 20110304021 - Wann; Clement Hsingjen ;   et al.
2011-12-15
Method For Fabricating A Strained Structure
App 20110272739 - LEE; Tsung-Lin ;   et al.
2011-11-10
Method of forming high-mobility devices including epitaxially growing a semiconductor layer on a dislocation-blocking layer in a recess formed in a semiconductor substrate
Grant 8,053,304 - Ko November 8, 2
2011-11-08
Dual metal silicides for lowering contact resistance
Grant 8,039,284 - Ke , et al. October 18, 2
2011-10-18
CMOS Devices with Schottky Source and Drain Regions
App 20110223727 - Ko; Chih-Hsin ;   et al.
2011-09-15
Method for Forming Antimony-Based FETs Monolithically
App 20110180846 - Lin; Heng-Kuang ;   et al.
2011-07-28
Metal stress memorization technology
Grant 7,985,652 - Ke , et al. July 26, 2
2011-07-26
Growing III-V Compound Semiconductors from Trenches Filled with Intermediate Layers
App 20110117730 - Wann; Clement Hsingjen ;   et al.
2011-05-19
Isolation Structure For Strained Channel Transistors
App 20110117724 - KO; Chih-Hsin ;   et al.
2011-05-19
Forming embedded dielectric layers adjacent to sidewalls of shallow trench isolation regions
Grant 7,928,474 - Lin , et al. April 19, 2
2011-04-19
Growing a III-V Layer on Silicon using Aligned Nano-Scale Patterns
App 20110086491 - Ko; Chih-Hsin ;   et al.
2011-04-14
High-Quality Hetero-Epitaxy by Using Nano-Scale Epitaxy Technology
App 20110062492 - Ko; Chih-Hsin ;   et al.
2011-03-17
Cmos Structure With Multiple Spacers
App 20110031538 - HSIEH; Bor Chiuan ;   et al.
2011-02-10
Fin Structure For High Mobility Multiple-gate Transistor
App 20110024794 - KO; Chih-Hsin ;   et al.
2011-02-03
Strained channel transistor formation
Grant 7,867,860 - Huang , et al. January 11, 2
2011-01-11
Methods For Forming A Transistor With A Strained Channel
App 20100308379 - Kuan; Ta-Ming ;   et al.
2010-12-09
Source/Drain Re-Growth for Manufacturing III-V Based Transistors
App 20100301392 - Ko; Chih-Hsin ;   et al.
2010-12-02
Gradient Ternary or Quaternary Multiple-Gate Transistor
App 20100301390 - Ko; Chih-Hsin ;   et al.
2010-12-02
Reducing Source/Drain Resistance of III-V Based Transistors
App 20100276668 - Ko; Chih-Hsin ;   et al.
2010-11-04
High-Mobility Multiple-Gate Transistor with Improved On-to-Off Current Ratio
App 20100252816 - Ko; Chih-Hsin ;   et al.
2010-10-07
Source/Drain Engineering of Devices with High-Mobility Channels
App 20100252862 - Ko; Chih-Hsin ;   et al.
2010-10-07
BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture
Grant 7,803,718 - Ko , et al. September 28, 2
2010-09-28
High-Mobility Channel Devices on Dislocation-Blocking Layers
App 20100213512 - Ko; Chih-Hsin
2010-08-26
Shallow trench isolation structure for semiconductor device
Grant 7,745,904 - Ko , et al. June 29, 2
2010-06-29
Hybrid Schottky source-drain CMOS for high mobility and low barrier
Grant 7,737,532 - Ke , et al. June 15, 2
2010-06-15
Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
Grant 7,646,068 - Ko , et al. January 12, 2
2010-01-12
Isolation spacer for thin SOI devices
Grant 7,582,934 - Ko , et al. September 1, 2
2009-09-01
Transistors with stressed channels
Grant 7,569,896 - Ko , et al. August 4, 2
2009-08-04
MOS Devices Having Elevated Source/Drain Regions
App 20090140351 - Lin; Hong-Nien ;   et al.
2009-06-04
BiCMOS Performance Enhancement by Mechanical Uniaxial Strain and Methods of Manufacture
App 20090117695 - Ko; Chih-Hsin ;   et al.
2009-05-07
MOS transistors with selectively strained channels
Grant 7,511,348 - Ko , et al. March 31, 2
2009-03-31
Forming Embedded Dielectric Layers Adjacent to Sidewalls of Shallow Trench Isolation Regions
App 20090045411 - Lin; Hong-Nien ;   et al.
2009-02-19
Transistor mobility improvement by adjusting stress in shallow trench isolation
Grant 7,465,620 - Ko , et al. December 16, 2
2008-12-16
BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture
Grant 7,466,008 - Ko , et al. December 16, 2
2008-12-16
MOS devices having elevated source/drain regions
App 20080277735 - Ko; Chih-Hsin ;   et al.
2008-11-13
Strained channel complementary field-effect transistors
Grant 7,442,967 - Ko , et al. October 28, 2
2008-10-28
BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture
App 20080224227 - Ko; Chih-Hsin ;   et al.
2008-09-18
MOS transistors with selectively strained channels
App 20080224225 - Ko; Chih-Hsin ;   et al.
2008-09-18
CMOS devices with schottky source and drain regions
App 20080191285 - Ko; Chih-Hsin ;   et al.
2008-08-14
Semiconductor device and a method of fabricating the device
App 20080185659 - Ke; Chung-Hu ;   et al.
2008-08-07
Strained MOS device and methods for forming the same
App 20080185617 - Kuan; Ta-Ming ;   et al.
2008-08-07
Isolation Spacer For Thin Soi Devices
App 20080142888 - KO; Chih-Hsin ;   et al.
2008-06-19
Isolation Spacer For Thin Soi Devices
App 20080145982 - KO; Chih-Hsin ;   et al.
2008-06-19
Dual metal silicides for lowering contact resistance
App 20080145984 - Ke; Chung-Hu ;   et al.
2008-06-19
Transistors with stressed channels and methods of manufacture
App 20070267694 - Ko; Chih-Hsin ;   et al.
2007-11-22
CMOS devices with improved gap-filling
App 20070235823 - Hsu; Ju-Wang ;   et al.
2007-10-11
Shallow trench isolation structure for semiconductor device
App 20070235835 - Ko; Chih-Hsin ;   et al.
2007-10-11
Diffusion topography engineering for high performance CMOS fabrication
App 20070215936 - Ko; Chih-Hsin ;   et al.
2007-09-20
Isolation structure for strained channel transistors
App 20070161206 - Ko; Chih-Hsin ;   et al.
2007-07-12
Transistor mobility improvement by adjusting stress in shallow trench isolation
App 20070132035 - Ko; Chih-Hsin ;   et al.
2007-06-14
Hybrid Schottky source-drain CMOS for high mobility and low barrier
App 20070052027 - Ke; Chung-Hu ;   et al.
2007-03-08
Dual gate electrode metal oxide semciconductor transistors
App 20070018259 - Ko; Chih-Hsin ;   et al.
2007-01-25
Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
App 20060255365 - Ko; Chih-Hsin ;   et al.
2006-11-16
Method of forming a shallow trench isolation structure
App 20060205164 - Ko; Chih-Hsin ;   et al.
2006-09-14
Strained channel complementary field-effect transistors and methods of manufacture
App 20060189056 - Ko; Chih-Hsin ;   et al.
2006-08-24
Capacitor-less 1T-DRAM cell with Schottky source and drain
App 20060125121 - Ko; Chih-Hsin ;   et al.
2006-06-15
Transistor mobility by adjusting stress in shallow trench isolation
App 20060121688 - Ko; Chih-Hsin ;   et al.
2006-06-08
CMOS device with selectively formed and backfilled semiconductor substrate areas to improve device performance
App 20060118878 - Huang; Yi-Chun ;   et al.
2006-06-08
Self-aligned gated p-i-n diode for ultra-fast switching
App 20060091490 - Chen; Hung-Wei ;   et al.
2006-05-04
Isolation spacer for thin SOI devices
App 20060081928 - Ko; Chih-Hsin ;   et al.
2006-04-20

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.

© 2024 USPTO.report | Privacy Policy | Resources | RSS Feed of Trademarks | Trademark Filings Twitter Feed