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Method of manufacturing a semiconductor device Grant 11,404,322 - Tsai , et al. August 2, 2 | 2022-08-02 |
Semiconductor device and manufacturing method therefore Grant 11,393,713 - Wann , et al. July 19, 2 | 2022-07-19 |
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Method for Fabricating a Strained Structure and Structure Formed App 20220173245 - Lee; Tsung-Lin ;   et al. | 2022-06-02 |
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Method Of Manufacturing Semiconductor Devices And Semiconductor Devices App 20220045190 - LEE; Yi-Jing ;   et al. | 2022-02-10 |
Semiconductor arrangement Grant 11,177,368 - Chen , et al. November 16, 2 | 2021-11-16 |
Method Of Manufacturing A Semiconductor Device App 20210351080 - TSAI; Chun Hsiung ;   et al. | 2021-11-11 |
Integrated Circuit Fin Layout Method App 20210342514 - HUANG; Po-Hsiang ;   et al. | 2021-11-04 |
Semiconductor structure having field plate and associated fabricating method Grant 11,158,739 - Cheng , et al. October 26, 2 | 2021-10-26 |
Method of forming MOSFET structure Grant 11,127,837 - Fu , et al. September 21, 2 | 2021-09-21 |
Wrap-Around Contact on FinFET App 20210272849 - Wang; Sung-Li ;   et al. | 2021-09-02 |
Integrated circuit fin layout method, system, and structure Grant 11,080,453 - Huang , et al. August 3, 2 | 2021-08-03 |
Semiconductor Structures and Methods of Forming Thereof App 20210193837 - Wu; Cheng-Hsien ;   et al. | 2021-06-24 |
Method for fabricating a strained structure and structure formed Grant 10,998,442 - Lee , et al. May 4, 2 | 2021-05-04 |
Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same Grant 10,978,451 - Wann , et al. April 13, 2 | 2021-04-13 |
(110) surface orientation for reducing fermi-level-pinning between high-K dielectric and group III-V compound semiconductor device Grant 10,964,817 - Cheng , et al. March 30, 2 | 2021-03-30 |
FINFET Device Having a Channel Defined in a Diamond-Like Shape Semiconductor Structure App 20210036131 - Lin; You-Ru ;   et al. | 2021-02-04 |
Method Of Metal Gate Formation And Structures Formed By The Same App 20210028069 - LEE; YI-JING ;   et al. | 2021-01-28 |
III-V compound semiconductors in isolation regions and method forming same Grant 10,879,065 - Ko , et al. December 29, 2 | 2020-12-29 |
Capacitor having multiple graphene structures Grant 10,854,708 - Jou , et al. December 1, 2 | 2020-12-01 |
Method for Fabricating a Strained Structure and Structure Formed App 20200365736 - Lee; Tsung-Lin ;   et al. | 2020-11-19 |
Semiconductor Device And Manufacturing Method Thereof App 20200343339 - TSAI; Chun Hsiung ;   et al. | 2020-10-29 |
Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials App 20200328307 - Wu; Cheng-Hsien ;   et al. | 2020-10-15 |
Method of metal gate formation and structures formed by the same Grant 10,804,163 - Lee , et al. October 13, 2 | 2020-10-13 |
FinFET device having a channel defined in a diamond-like shape semiconductor structure Grant 10,797,162 - Lin , et al. October 6, 2 | 2020-10-06 |
(110) surface orientation for reducing fermi-level-pinning between high-K dielectric and group III-V compound semiconductor device Grant 10,770,588 - Cheng , et al. Sep | 2020-09-08 |
Wrap-Around Contact on FinFET App 20200258784 - A1 | 2020-08-13 |
Semiconductor structures and methods with high mobility and high energy bandgap materials Grant 10,727,351 - Wu , et al. | 2020-07-28 |
FinFET semiconductor device with germanium diffusion over silicon fins Grant 10,665,674 - Lee , et al. | 2020-05-26 |
Wrap-around contact on FinFET Grant 10,651,091 - Wang , et al. | 2020-05-12 |
Method Of Metal Gate Formation And Structures Formed By The Same App 20200135589 - LEE; YI-JING ;   et al. | 2020-04-30 |
Integrated Circuit Fin Layout Method, System, And Structure App 20200134122 - HUANG; Po-Hsiang ;   et al. | 2020-04-30 |
Method for Fabricating a Strained Structure and Structure Formed App 20200119196 - Lee; Tsung-Lin ;   et al. | 2020-04-16 |
Complimentary Metal-Oxide-Semiconductor (CMOS) with Low Contact Resistivity and Method of Forming Same App 20200119013 - Wann; Clement Hsingjen ;   et al. | 2020-04-16 |
FinFET devices with unique shape and the fabrication thereof Grant 10,622,261 - Lee , et al. | 2020-04-14 |
Capacitor Having Multiple Graphene Structures App 20200083318 - Jou; Chewn-Pu ;   et al. | 2020-03-12 |
(110) Surface Orientation for Reducing Fermi-Level-Pinning Between High-K Dielectric and Group Iii-V Compound Semiconductor Devi App 20200075756 - Cheng; Chao-Ching ;   et al. | 2020-03-05 |
Method of Forming MOSFET Structure App 20200058765 - Fu; Ching-Feng ;   et al. | 2020-02-20 |
FinFET Semiconductor Device with Germanium Diffusion Over Silicon Fins App 20200035789 - Lee; Yi-Jing ;   et al. | 2020-01-30 |
Method for fabricating a strained structure and structure formed Grant 10,510,887 - Lee , et al. Dec | 2019-12-17 |
Capacitor having multiple graphene structures Grant 10,510,827 - Jou , et al. Dec | 2019-12-17 |
Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same Grant 10,510,754 - Wann , et al. Dec | 2019-12-17 |
FinFET semiconductor device with germanium diffusion over silicon fins Grant 10,504,993 - Lee , et al. Dec | 2019-12-10 |
Method of forming MOSFET structure Grant 10,461,170 - Fu , et al. Oc | 2019-10-29 |
Wrap-Around Contact on FinFET App 20190252261 - Wang; Sung-Li ;   et al. | 2019-08-15 |
Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials App 20190252546 - Wu; Cheng-Hsien ;   et al. | 2019-08-15 |
Semiconductor Arrangement App 20190245061 - CHEN; Wei-Chieh ;   et al. | 2019-08-08 |
Semiconductor Structure And Associated Fabricating Method App 20190189793 - CHENG; CHIH-CHANG ;   et al. | 2019-06-20 |
Source/drain profile for FinFeT Grant 10,326,021 - Ma , et al. | 2019-06-18 |
Complimentary metal-oxide-semiconductor (CMOS) with low contact resistivity and method of forming same Grant 10,304,826 - Wann , et al. | 2019-05-28 |
FinFET Devices with Unique Shape and the Fabrication Thereof App 20190122939 - Lee; Yi-Jing ;   et al. | 2019-04-25 |
Wrap-around contact on FinFET Grant 10,269,649 - Wang , et al. | 2019-04-23 |
Semiconductor structures and methods with high mobility and high energy bandgap materials Grant 10,269,969 - Wu , et al. | 2019-04-23 |
Gradient ternary or quaternary multiple-gate transistor Grant 10,269,970 - Ko , et al. | 2019-04-23 |
FINFET Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure App 20190115453 - Lin; You-Ru ;   et al. | 2019-04-18 |
Method of semiconductor arrangement formation Grant 10,263,097 - Chen , et al. | 2019-04-16 |
Multiple gate field effect transistors having oxygen-scavenged gate stack Grant 10,263,091 - Yeo , et al. | 2019-04-16 |
Complimentary Metal-Oxide-Semiconductor (CMOS) with Low Contact Resistivity and Method of Forming Same App 20190096885 - Wann; Clement Hsingjen ;   et al. | 2019-03-28 |
Semiconductor structure having field plate and associated fabricating method Grant 10,205,024 - Cheng , et al. Feb | 2019-02-12 |
FinFET devices with unique fin shape and the fabrication thereof Grant 10,170,375 - Lee , et al. J | 2019-01-01 |
FinFET device having a channel defined in a diamond-like shape semiconductor structure Grant 10,164,062 - Lin , et al. Dec | 2018-12-25 |
FinFETs with strained well regions Grant 10,164,023 - Lee , et al. Dec | 2018-12-25 |
FinFETs with strained well regions Grant 10,158,015 - Lee , et al. Dec | 2018-12-18 |
Capacitor Having a Graphene Structure, Semiconductor Device Including the Capacitor and Method of Forming the Same App 20180350898 - Jou; Chewn-Pu ;   et al. | 2018-12-06 |
Semiconductor structure and the manufacturing method thereof Grant 10,115,826 - Lee , et al. October 30, 2 | 2018-10-30 |
High-mobility multiple-gate transistor with improved on-to-off current ratio Grant 10,109,748 - Ko , et al. October 23, 2 | 2018-10-23 |
Method of forming strained structures of semiconductor devices Grant 10,096,710 - Wu , et al. October 9, 2 | 2018-10-09 |
Source/Drain Profile for FinFET App 20180277680 - Ma; Ta-Chun ;   et al. | 2018-09-27 |
Apparatus and method for FinFETs Grant 10,084,069 - Lee , et al. September 25, 2 | 2018-09-25 |
Capacitor having a graphene structure, semiconductor device including the capacitor and method of forming the same Grant 10,050,104 - Jou , et al. August 14, 2 | 2018-08-14 |
Wrap-Around Contact on FinFET App 20180219077 - Wang; Sung-Li ;   et al. | 2018-08-02 |
Isolation structure of semiconductor device Grant 10,026,641 - Chen , et al. July 17, 2 | 2018-07-17 |
Growing a III-V layer on silicon using aligned nano-scale patterns Grant 10,020,189 - Ko , et al. July 10, 2 | 2018-07-10 |
Growing III-V Compound Semiconductors from Trenches Filled with Intermediate Layers App 20180151359 - Ko; Chih-Hsin ;   et al. | 2018-05-31 |
Source/drain profile for FinFET Grant 9,985,131 - Ma , et al. May 29, 2 | 2018-05-29 |
Wrap-around contact on FinFET Grant 9,941,367 - Wang , et al. April 10, 2 | 2018-04-10 |
FinFETs with Strained Well Regions App 20180083103 - Lee; Yi-Jing ;   et al. | 2018-03-22 |
Apparatus and method for FinFETs Grant 9,922,828 - Lee , et al. March 20, 2 | 2018-03-20 |
FinFET low resistivity contact formation method Grant 9,899,521 - Wang , et al. February 20, 2 | 2018-02-20 |
Silicon germanium source/drain regions Grant 9,887,290 - Tsai , et al. February 6, 2 | 2018-02-06 |
Isolation Structure of Semiconductor Device App 20180033678 - Chen; Shu-Han ;   et al. | 2018-02-01 |
Method Of Semiconductor Arrangement Formation App 20180026116 - CHEN; Wei-Chieh ;   et al. | 2018-01-25 |
Growing III-V compound semiconductors from trenches filled with intermediate layers Grant 9,870,920 - Ko , et al. January 16, 2 | 2018-01-16 |
Gradient Ternary or Quaternary Multiple-Gate Transistor App 20180006156 - Ko; Chih-Hsin ;   et al. | 2018-01-04 |
FinFETs with strained well regions Grant 9,859,380 - Lee , et al. January 2, 2 | 2018-01-02 |
Method Of Forming Strained Structures Of Semiconductor Devices App 20170352760 - WU; Cheng-Hsien ;   et al. | 2017-12-07 |
FinFETs with Strained Well Regions App 20170352596 - Lee; Yi-Jing ;   et al. | 2017-12-07 |
Channel epitaxial regrowth flow (CRF) Grant 9,831,322 - Fu , et al. November 28, 2 | 2017-11-28 |
Apparatus and Method for FinFETs App 20170309730 - Lee; Yi-Jing ;   et al. | 2017-10-26 |
Isolation structure of semiconductor device Grant 9,786,543 - Chen , et al. October 10, 2 | 2017-10-10 |
Methods for forming semiconductor regions in trenches Grant 9,780,174 - Lee , et al. October 3, 2 | 2017-10-03 |
Method of semiconductor arrangement formation Grant 9,773,889 - Chen , et al. September 26, 2 | 2017-09-26 |
Gradient ternary or quaternary multiple-gate transistor Grant 9,768,305 - Ko , et al. September 19, 2 | 2017-09-19 |
Method of forming strained structures of semiconductor devices Grant 9,748,388 - Wu , et al. August 29, 2 | 2017-08-29 |
FinFETs with strained well regions Grant 9,748,143 - Lee , et al. August 29, 2 | 2017-08-29 |
Semiconductor Structure And Associated Fabricating Method App 20170229570 - CHENG; CHIH-CHANG ;   et al. | 2017-08-10 |
Apparatus and method for FinFETs Grant 9,722,051 - Lee , et al. August 1, 2 | 2017-08-01 |
Growing a III-V Layer on Silicon using Aligned Nano-Scale Patterns App 20170194141 - Ko; Chih-Hsin ;   et al. | 2017-07-06 |
Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials App 20170186871 - Wu; Cheng-Hsien ;   et al. | 2017-06-29 |
FinFETs with Strained Well Regions App 20170179291 - Lee; Yi-Jing ;   et al. | 2017-06-22 |
High-Mobility Multiple-Gate Transistor with Improved On-to-Off Current Ratio App 20170170335 - Ko; Chih-Hsin ;   et al. | 2017-06-15 |
CMOS devices with Schottky source and drain regions Grant 9,673,105 - Ko , et al. June 6, 2 | 2017-06-06 |
Method for Fabricating a Strained Structure and Structure Formed App 20170148917 - LEE; TSUNG-LIN ;   et al. | 2017-05-25 |
Multiple gate field-effect transistors having oxygen-scavenged gate stack Grant 9,659,780 - Yeo , et al. May 23, 2 | 2017-05-23 |
Apparatus and Method for FinFETs App 20170133225 - Lee; Yi-Jing ;   et al. | 2017-05-11 |
Finfet Devices With Unique Fin Shape And The Fabrication Thereof App 20170125307 - Lee; Yi-Jing ;   et al. | 2017-05-04 |
FinFET Semiconductor Device with Germanium Diffusion Over Silicon Fins App 20170104067 - Lee; Yi-Jing ;   et al. | 2017-04-13 |
Multiple Gate Field Effect Transistors Having Oxygen-Scavenged Gate Stack App 20170092732 - Yeo; Yee-Chia ;   et al. | 2017-03-30 |
Semiconductor Structure And The Manufacturing Method Thereof App 20170084746 - LEE; YI-JING ;   et al. | 2017-03-23 |
FinFETs with strained well regions Grant 9,601,342 - Lee , et al. March 21, 2 | 2017-03-21 |
Growing a III-V layer on silicon using aligned nano-scale patterns Grant 9,601,328 - Ko , et al. March 21, 2 | 2017-03-21 |
Semiconductor device with enhanced strain Grant 9,601,594 - Wu , et al. March 21, 2 | 2017-03-21 |
Semiconductor structures and methods with high mobility and high energy bandgap materials Grant 9,595,614 - Wu , et al. March 14, 2 | 2017-03-14 |
FINFET Device Having a Channel Defined in a Diamond-Like Shape Semiconductor Structure App 20170069736 - Lin; You-Ru ;   et al. | 2017-03-09 |
High-mobility multiple-gate transistor with improved on-to-off current ratio Grant 9,590,068 - Ko , et al. March 7, 2 | 2017-03-07 |
Inverted trapezoidal recess for epitaxial growth Grant 9,583,379 - Ko , et al. February 28, 2 | 2017-02-28 |
Multiple gate field-effect transistors having oxygen-scavenged gate stack Grant 9,564,489 - Yeo , et al. February 7, 2 | 2017-02-07 |
Method for fabricating a strained structure and structure formed Grant 9,564,529 - Lee , et al. February 7, 2 | 2017-02-07 |
Apparatus and method for FinFETs Grant 9,559,099 - Lee , et al. January 31, 2 | 2017-01-31 |
Semiconductor structure and the manufacturing method thereof Grant 9,553,012 - Lee , et al. January 24, 2 | 2017-01-24 |
Semiconductor device with a strained region and method of making Grant 9,553,149 - Lee , et al. January 24, 2 | 2017-01-24 |
FinFET devices with unique fin shape and the fabrication thereof Grant 9,548,303 - Lee , et al. January 17, 2 | 2017-01-17 |
Multi-Gate Field Effect Transistors Having Oxygen-Scavenged Gate Stack App 20160379831 - Yeo; Yee-Chia ;   et al. | 2016-12-29 |
Multiple Gate Field-effect Transistors Having Oxygen-scavenged Gate Stack App 20160380056 - Yeo; Yee-Chia ;   et al. | 2016-12-29 |
FinFET semiconductor device with germanium diffusion over silicon fins Grant 9,530,776 - Lee , et al. December 27, 2 | 2016-12-27 |
Strained MOS device and methods for forming the same Grant 9,530,865 - Kuan , et al. December 27, 2 | 2016-12-27 |
FinFETs with Strained Well Regions App 20160372579 - Lee; Yi-Jing ;   et al. | 2016-12-22 |
Device having source/drain regions regrown from un-relaxed silicon layer Grant 9,508,849 - Wann , et al. November 29, 2 | 2016-11-29 |
(110) Surface Orientation for Reducing Fermi-Level-Pinning Between High-K Dielectric and Group Iii-V Compound Semiconductor Device App 20160343846 - Cheng; Chao-Ching ;   et al. | 2016-11-24 |
Wrap-Around Contact on FinFET App 20160343815 - Wang; Sung-Li ;   et al. | 2016-11-24 |
FINFET device having a channel defined in a diamond-like shape semiconductor structure Grant 9,502,539 - Lin , et al. November 22, 2 | 2016-11-22 |
Channel Epitaxial Regrowth Flow (CRF) App 20160300931 - Fu; Ching-Feng ;   et al. | 2016-10-13 |
FinFETs with strained well regions Grant 9,455,320 - Lee , et al. September 27, 2 | 2016-09-27 |
FinFET having superlattice stressor Grant 9,450,098 - Lee , et al. September 20, 2 | 2016-09-20 |
Wrap-around contact Grant 9,443,769 - Wang , et al. September 13, 2 | 2016-09-13 |
Method Of Forming Mosfet Structure App 20160247896 - FU; CHING-FENG ;   et al. | 2016-08-25 |
(110) surface orientation for reducing fermi-level-pinning between high-K dielectric and group III-V compound semiconductor substrate Grant 9,406,518 - Cheng , et al. August 2, 2 | 2016-08-02 |
Channel epitaxial regrowth flow (CRF) Grant 9,391,203 - Fu , et al. July 12, 2 | 2016-07-12 |
CMOS devices with reduced leakage and methods of forming the same Grant 9,390,982 - Ko , et al. July 12, 2 | 2016-07-12 |
FinFET Low Resistivity Contact Formation Method App 20160190321 - Wang; Sung-Li ;   et al. | 2016-06-30 |
Semiconductor device and method of forming the same Grant 9,373,549 - Wann , et al. June 21, 2 | 2016-06-21 |
Method Of Forming Strained Structures Of Semiconductor Devices App 20160155801 - WU; Cheng-Hsien ;   et al. | 2016-06-02 |
Method of forming MOSFET structure Grant 9,343,412 - Fu , et al. May 17, 2 | 2016-05-17 |
Method of making semiconductor device Grant 9,337,304 - Wu , et al. May 10, 2 | 2016-05-10 |
CMOS Devices with Reduced Leakage and Methods of Forming the Same App 20160086862 - Ko; Chih-Hsin ;   et al. | 2016-03-24 |
Isolation Structure of Semiconductor Device App 20160086840 - Chen; Shu-Han ;   et al. | 2016-03-24 |
FinFET low resistivity contact formation method Grant 9,287,138 - Wang , et al. March 15, 2 | 2016-03-15 |
Inverted Trapezoidal Recess for Epitaxial Growth App 20160064271 - Ko; Chih-Hsin ;   et al. | 2016-03-03 |
Structure and method and FinFET device Grant 9,276,117 - Lee , et al. March 1, 2 | 2016-03-01 |
Structure and Method and FinFET Device App 20160056277 - Lee; Yi-Jing ;   et al. | 2016-02-25 |
Capacitor Having A Graphene Structure, Semiconductor Device Including The Capacitor And Method Of Forming The Same App 20160056228 - JOU; Chewn-Pu ;   et al. | 2016-02-25 |
Growing III-V Compound Semiconductors from Trenches Filled with Intermediate Layers App 20160049299 - Ko; Chih-Hsin ;   et al. | 2016-02-18 |
Strained structures of semiconductor devices Grant 9,246,004 - Wu , et al. January 26, 2 | 2016-01-26 |
Method Of Semiconductor Arrangement Formation App 20160020302 - Chen; Wei-Chieh ;   et al. | 2016-01-21 |
Apparatus and Method for FinFETs App 20150380527 - Lee; Yi-Jing ;   et al. | 2015-12-31 |
FinFETs with Strained Well Regions App 20150380528 - Lee; Yi-Jing ;   et al. | 2015-12-31 |
Method For Fabricating A Strained Structure And Structure Formed App 20150380554 - LEE; Tsung-Lin ;   et al. | 2015-12-31 |
CMOS devices with reduced leakage and methods of forming the same Grant 9,224,734 - Lee , et al. December 29, 2 | 2015-12-29 |
Growing III-V compound semiconductors from trenches filled with intermediate layers Grant 9,209,023 - Wann , et al. December 8, 2 | 2015-12-08 |
Isolation structure of semiconductor device Grant 9,209,066 - Chen , et al. December 8, 2 | 2015-12-08 |
Methods for forming semiconductor regions in trenches Grant 9,196,709 - Lee , et al. November 24, 2 | 2015-11-24 |
Inverted trapezoidal recess for epitaxial growth Grant 9,184,050 - Wann , et al. November 10, 2 | 2015-11-10 |
Methods for Forming Semiconductor Regions in Trenches App 20150318382 - Lee; Yi-Jing ;   et al. | 2015-11-05 |
Reverse tone STI formation and epitaxial growth of semiconductor between STI regions Grant 9,177,792 - Chang , et al. November 3, 2 | 2015-11-03 |
Source/Drain Profile for FinFET App 20150311340 - Ma; Ta-Chun ;   et al. | 2015-10-29 |
Wrap-Around Contact App 20150303118 - Wang; Sung-Li ;   et al. | 2015-10-22 |
FinFETs with strained well regions Grant 9,159,824 - Lee , et al. October 13, 2 | 2015-10-13 |
Apparatus and method for FinFETs Grant 9,153,582 - Lee , et al. October 6, 2 | 2015-10-06 |
Method Of Making Semiconductor Device App 20150279965 - WU; Cheng-Hsien ;   et al. | 2015-10-01 |
Method for fabricating a strained structure Grant 9,147,594 - Lee , et al. September 29, 2 | 2015-09-29 |
FinFETs with Strained Well Regions App 20150263093 - Lee; Yi-Jing ;   et al. | 2015-09-17 |
FinFET Devices with Unique Fin Shape and the Fabrication Thereof App 20150263003 - Lee; Yi-Jing ;   et al. | 2015-09-17 |
Multi-layer semiconductor device structures with different channel materials Grant 9,123,546 - Lin , et al. September 1, 2 | 2015-09-01 |
Methods for forming semiconductor regions in trenches Grant 9,123,633 - Lee , et al. September 1, 2 | 2015-09-01 |
Method Of Forming Mosfet Structure App 20150228483 - FU; CHING-FENG ;   et al. | 2015-08-13 |
Source/drain profile for FinFET Grant 9,105,654 - Ma , et al. August 11, 2 | 2015-08-11 |
FinFET Semiconductor Device with Germanium Diffusion Over Silicon Fins App 20150206875 - Lee; Yi-Jing ;   et al. | 2015-07-23 |
FinFETs with strained well regions Grant 9,087,902 - Lee , et al. July 21, 2 | 2015-07-21 |
Contact structure of semiconductor device Grant 9,076,819 - Wu , et al. July 7, 2 | 2015-07-07 |
FinFET Having Superlattice Stressor App 20150162447 - Lee; Yi-Jing ;   et al. | 2015-06-11 |
CMOS Devices with Reduced Leakage and Methods of Forming the Same App 20150145002 - Lee; Yi-Jing ;   et al. | 2015-05-28 |
In-Situ Doping of Arsenic for Source and Drain Epitaxy App 20150137198 - Tsai; Ji-Yin ;   et al. | 2015-05-21 |
Semiconductor Device With A Strained Region And Method Of Making App 20150129979 - Lee; Yi-Jing ;   et al. | 2015-05-14 |
Multi-layer Semiconductor Device Structures With Different Channel Materials App 20150129891 - LIN; YI-TANG ;   et al. | 2015-05-14 |
Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials App 20150123144 - Wu; Cheng-Hsien ;   et al. | 2015-05-07 |
Source/drain re-growth for manufacturing III-V based transistors Grant 9,006,788 - Ko , et al. April 14, 2 | 2015-04-14 |
Channel Epitaxial Regrowth Flow (CRF) App 20150097242 - Fu; Ching-Feng ;   et al. | 2015-04-09 |
FinFET having superlattice stressor Grant 8,994,002 - Lee , et al. March 31, 2 | 2015-03-31 |
Semiconductor Structure And The Manufacturing Method Thereof App 20150076558 - LEE; YI-JING ;   et al. | 2015-03-19 |
High-Mobility Multiple-Gate Transistor with Improved On-to-Off Current Ratio App 20150072495 - Ko; Chih-Hsin ;   et al. | 2015-03-12 |
Semiconductor structures and methods with high mobility and high energy bandgap materials Grant 8,969,156 - Wu , et al. March 3, 2 | 2015-03-03 |
In-situ doping of arsenic for source and drain epitaxy Grant 8,962,400 - Tsai , et al. February 24, 2 | 2015-02-24 |
FinFET Low Resistivity Contact Formation Method App 20150041854 - Wang; Sung-Li ;   et al. | 2015-02-12 |
Semiconductor Device And Method Of Forming The Same App 20150017768 - Wann; Clement Hsingjen ;   et al. | 2015-01-15 |
FINFET Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure App 20150011068 - Lin; You-Ru ;   et al. | 2015-01-08 |
High-mobility multiple-gate transistor with improved on-to-off current ratio Grant 8,927,371 - Ko , et al. January 6, 2 | 2015-01-06 |
Channel epitaxial regrowth flow (CRF) Grant 8,927,352 - Fu , et al. January 6, 2 | 2015-01-06 |
Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials App 20140357049 - Wu; Cheng-Hsien ;   et al. | 2014-12-04 |
Semiconductor device having SiGe substrate, interfacial layer and high K dielectric layer Grant 8,878,302 - Cheng , et al. November 4, 2 | 2014-11-04 |
Semiconductor Devices and Methods of Manufacture Thereof App 20140312431 - Tsai; Ji-Yin ;   et al. | 2014-10-23 |
Semiconductor devices and methods of manufacture thereof Grant 8,866,188 - Tsai , et al. October 21, 2 | 2014-10-21 |
Apparatus and Method for FinFETs App 20140284726 - Lee; Yi-Jing ;   et al. | 2014-09-25 |
FinFET device having a channel defined in a diamond-like shape semiconductor structure Grant 8,841,701 - Lin , et al. September 23, 2 | 2014-09-23 |
Semiconductor structures and methods with high mobility and high energy bandgap materials Grant 8,836,016 - Wu , et al. September 16, 2 | 2014-09-16 |
FinFETs with Strained Well Regions App 20140252469 - Lee; Yi-Jing ;   et al. | 2014-09-11 |
Channel Epitaxial Regrowth Flow (CRF) App 20140252488 - Fu; Ching-Feng ;   et al. | 2014-09-11 |
Isolation Structure Of Semiconductor Device App 20140246695 - Chen; Shu-Han ;   et al. | 2014-09-04 |
FinFETs with Strained Well Regions App 20140239402 - Lee; Yi-Jing ;   et al. | 2014-08-28 |
Method for epitaxial re-growth of semiconductor region Grant 8,815,712 - Wan , et al. August 26, 2 | 2014-08-26 |
Source/drain engineering of devices with high-mobility channels Grant 8,816,391 - Ko , et al. August 26, 2 | 2014-08-26 |
Growing III-V Compound Semiconductors from Trenches Filled with Intermediate Layers App 20140235040 - Wann; Clement Hsingjen ;   et al. | 2014-08-21 |
Methods of manufacturing semiconductor devices including use of a protective material Grant 8,809,202 - Weng , et al. August 19, 2 | 2014-08-19 |
Methods for Forming Semiconductor Regions in Trenches App 20140217499 - Lee; Yi-Jing ;   et al. | 2014-08-07 |
Methods for Forming Semiconductor Regions in Trenches App 20140220751 - Lee; Yi-Jing ;   et al. | 2014-08-07 |
Apparatus and Method for FinFETs App 20140220753 - Lee; Yi-Jing ;   et al. | 2014-08-07 |
Contact Structure Of Semiconductor Device App 20140206167 - WU; Cheng-Hsien ;   et al. | 2014-07-24 |
CMOS FinFET device Grant 8,786,019 - Wu , et al. July 22, 2 | 2014-07-22 |
Semiconductor devices and methods of manufacture thereof Grant 8,785,285 - Tsai , et al. July 22, 2 | 2014-07-22 |
Complimentary Metal-Oxide-Semiconductor (CMOS) With Low Contact Resistivity and Method of Forming Same App 20140183645 - Wann; Clement Hsingjen ;   et al. | 2014-07-03 |
Semiconductor device and method of forming the same Grant 8,759,920 - Wann , et al. June 24, 2 | 2014-06-24 |
Growing III-V compound semiconductors from trenches filled with intermediate layers Grant 8,759,203 - Wann , et al. June 24, 2 | 2014-06-24 |
Semiconductor Device Having SiGe Substrate, Interfacial Layer and High K Dielectric Layer App 20140151819 - Cheng; Chao-Ching ;   et al. | 2014-06-05 |
Apparatus and method for FinFETs Grant 8,742,509 - Lee , et al. June 3, 2 | 2014-06-03 |
Device Having Source/Drain Regions Regrown from Un-Relaxed Silicon Layer App 20140138742 - Wann; Clement Hsingjen ;   et al. | 2014-05-22 |
Reverse tone STI formation Grant 8,728,906 - Chang , et al. May 20, 2 | 2014-05-20 |
High-Mobility Multiple-Gate Transistor with Improved On-to-Off Current Ratio App 20140134815 - Ko; Chih-Hsin ;   et al. | 2014-05-15 |
Contact structure of semiconductor device Grant 8,716,765 - Wu , et al. May 6, 2 | 2014-05-06 |
Reverse Tone STI Formation App 20140099771 - Chang; Kai-Tai ;   et al. | 2014-04-10 |
Reverse Tone STI Formation App 20140099779 - Chang; Kai-Tai ;   et al. | 2014-04-10 |
CMOS Devices with Schottky Source and Drain Regions App 20140094008 - Ko; Chih-Hsin ;   et al. | 2014-04-03 |
High-mobility multiple-gate transistor with improved on-to-off current ratio Grant 8,674,341 - Ko , et al. March 18, 2 | 2014-03-18 |
Reducing source/drain resistance of III-V based transistors Grant 8,674,408 - Ko , et al. March 18, 2 | 2014-03-18 |
Source/Drain Re-Growth for Manufacturing III-V Based Transistors App 20140070276 - Ko; Chih-Hsin ;   et al. | 2014-03-13 |
MOCVD for Growing III-V Compound Semiconductors on Silicon Substrates App 20140033981 - Wann; Clement Hsingjen ;   et al. | 2014-02-06 |
Methods for epitaxially growing active regions between STI regions Grant 8,629,040 - Chang , et al. January 14, 2 | 2014-01-14 |
Fin structure for high mobility multiple-gate transistor Grant 8,629,478 - Ko , et al. January 14, 2 | 2014-01-14 |
Method for forming antimony-based FETs monolithically Grant 8,629,012 - Lin , et al. January 14, 2 | 2014-01-14 |
FinFET design and method of fabricating same Grant 08618556 - | 2013-12-31 |
Source/drain re-growth for manufacturing III-V based transistors Grant 8,617,976 - Ko , et al. December 31, 2 | 2013-12-31 |
Source/drain re-growth for manufacturing III-V based transistors Grant 08617976 - | 2013-12-31 |
FinFET design and method of fabricating same Grant 8,618,556 - Wu , et al. December 31, 2 | 2013-12-31 |
Re-growing source/drain regions from un-relaxed silicon layer Grant 8,609,518 - Wann , et al. December 17, 2 | 2013-12-17 |
MOCVD for growing III-V compound semiconductors on silicon substrates Grant 8,609,517 - Wann , et al. December 17, 2 | 2013-12-17 |
Strained MOS Device and Methods for Forming the Same App 20130323900 - Kuan; Ta-Ming ;   et al. | 2013-12-05 |
Semiconductor Device and Method of Forming the Same App 20130320452 - Wann; Clement Hsingjen ;   et al. | 2013-12-05 |
MOS devices having elevated source/drain regions Grant 8,569,837 - Ko , et al. October 29, 2 | 2013-10-29 |
Isolation structure for strained channel transistors Grant 8,569,146 - Ko , et al. October 29, 2 | 2013-10-29 |
Method For Fabricating A Strained Structure App 20130264643 - LEE; Tsung-Lin ;   et al. | 2013-10-10 |
Cmos Finfet Device And Method Of Forming The Same App 20130256799 - Wu; Cheng-Hsien ;   et al. | 2013-10-03 |
Contact Structure Of Semiconductor Device App 20130248927 - WU; Cheng-Hsien ;   et al. | 2013-09-26 |
Source/Drain Profile for FinFET App 20130248948 - Ma; Ta-Chun ;   et al. | 2013-09-26 |
Reducing Source/Drain Resistance of III-V Based Transistors App 20130248929 - Ko; Chih-Hsin ;   et al. | 2013-09-26 |
FinFET Having Superlattice Stressor App 20130240836 - Lee; Yi-Jing ;   et al. | 2013-09-19 |
Strained MOS device and methods for forming the same Grant 8,536,619 - Kuan , et al. September 17, 2 | 2013-09-17 |
Semiconductor Structures and Methods with High Mobility and High Energy Bandgap Materials App 20130234147 - Wu; Cheng-Hsien ;   et al. | 2013-09-12 |
Semiconductor Devices and Methods of Manufacture Thereof App 20130234203 - Tsai; Ji-Yin ;   et al. | 2013-09-12 |
Apparatus and Method for FinFETs App 20130228875 - Lee; Yi-Jing ;   et al. | 2013-09-05 |
Semiconductor Device Manufacturing Methods App 20130210212 - Weng; Chih-Hui ;   et al. | 2013-08-15 |
Method for fabricating a strained structure Grant 8,497,528 - Lee , et al. July 30, 2 | 2013-07-30 |
Method of forming CMOS FinFET device Grant 8,486,770 - Wu , et al. July 16, 2 | 2013-07-16 |
Method of Forming CMOS FinFET Device App 20130168771 - Wu; Cheng-Hsien ;   et al. | 2013-07-04 |
Methods for Semiconductor Regrowth App 20130171792 - Wan; Cheng-Tien ;   et al. | 2013-07-04 |
Reducing source/drain resistance of III-V based transistors Grant 8,455,860 - Ko , et al. June 4, 2 | 2013-06-04 |
Formation of III-V based devices on semiconductor substrates Grant 8,455,929 - Ko , et al. June 4, 2 | 2013-06-04 |
(110) Surface Orientation For Reducing Fermi-level-pinning Between High-k Dielectric And Group Iii-v Compound Semiconductor Substrate App 20130126985 - Cheng; Chao-Ching ;   et al. | 2013-05-23 |
Reverse Tone STI Formation App 20130122686 - Chang; Kai-Tai ;   et al. | 2013-05-16 |
Strained Structures Of Semiconductor Devices App 20130119370 - WU; Cheng-Hsien ;   et al. | 2013-05-16 |
Semiconductor Device With Enhanced Strain App 20130119405 - Wu; Cheng-Hsien ;   et al. | 2013-05-16 |
CMOS devices with Schottky source and drain regions Grant 8,426,298 - Ko , et al. April 23, 2 | 2013-04-23 |
Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces Grant 8,426,890 - Wu , et al. April 23, 2 | 2013-04-23 |
Finfet Device Having A Channel Defined In A Diamond-like Shape Semiconductor Structure App 20130049068 - Lin; You-Ru ;   et al. | 2013-02-28 |
Re-growing Source/Drain Regions from Un-Relaxed Silicon Layer App 20130020612 - Wann; Clement Hsingjen ;   et al. | 2013-01-24 |
In-Situ Doping of Arsenic for Source and Drain Epitaxy App 20130011983 - Tsai; Ji-Yin ;   et al. | 2013-01-10 |
Using Hexachlorodisilane as a Silicon Precursor for Source/Drain Epitaxy App 20130011984 - Wang; Kang-Wei ;   et al. | 2013-01-10 |
Finfet Design And Method Of Fabricating Same App 20130001591 - Wu; Cheng-Hsien ;   et al. | 2013-01-03 |
Method for Forming Antimony-Based FETs Monolithically App 20120329254 - Lin; Heng-Kuang ;   et al. | 2012-12-27 |
CMOS structure with multiple spacers Grant 8,299,508 - Hsieh , et al. October 30, 2 | 2012-10-30 |
Method for forming antimony-based FETs monolithically Grant 8,253,167 - Lin , et al. August 28, 2 | 2012-08-28 |
Semiconductor Device And Manufacturing Method With Improved Epitaxial Quality Of Iii-v Compound On Silicon Surfaces App 20120211803 - WU; Cheng-Hsien ;   et al. | 2012-08-23 |
Epitaxial growth of III-V compound semiconductors on silicon surfaces Grant 8,242,540 - Wann , et al. August 14, 2 | 2012-08-14 |
Methods for forming a transistor with a strained channel Grant 8,236,658 - Kuan , et al. August 7, 2 | 2012-08-07 |
Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces Grant 8,183,134 - Wu , et al. May 22, 2 | 2012-05-22 |
Semiconductor Device And Manufacturing Method With Improved Epitaxial Quality Of Iii-v Compound On Silicon Surfaces App 20120094467 - WU; Cheng-Hsien ;   et al. | 2012-04-19 |
Semiconductor device and a method of fabricating the device Grant 8,154,107 - Ke , et al. April 10, 2 | 2012-04-10 |
Inverted Trapezoidal Recess for Epitaxial Growth App 20120025201 - Wann; Clement Hsingjen ;   et al. | 2012-02-02 |
Formation of III-V Based Devices on Semiconductor Substrates App 20120001239 - Ko; Chih-Hsin ;   et al. | 2012-01-05 |
Isolation spacer for thin SOI devices Grant 8,084,305 - Ko , et al. December 27, 2 | 2011-12-27 |
MOCVD for Growing III-V Compound Semiconductors on Silicon Substrates App 20110306179 - Wann; Clement Hsingjen ;   et al. | 2011-12-15 |
Epitaxial Growth of III-V Compound Semiconductors on Silicon Surfaces App 20110304021 - Wann; Clement Hsingjen ;   et al. | 2011-12-15 |
Method For Fabricating A Strained Structure App 20110272739 - LEE; Tsung-Lin ;   et al. | 2011-11-10 |
Method of forming high-mobility devices including epitaxially growing a semiconductor layer on a dislocation-blocking layer in a recess formed in a semiconductor substrate Grant 8,053,304 - Ko November 8, 2 | 2011-11-08 |
Dual metal silicides for lowering contact resistance Grant 8,039,284 - Ke , et al. October 18, 2 | 2011-10-18 |
CMOS Devices with Schottky Source and Drain Regions App 20110223727 - Ko; Chih-Hsin ;   et al. | 2011-09-15 |
Method for Forming Antimony-Based FETs Monolithically App 20110180846 - Lin; Heng-Kuang ;   et al. | 2011-07-28 |
Metal stress memorization technology Grant 7,985,652 - Ke , et al. July 26, 2 | 2011-07-26 |
Growing III-V Compound Semiconductors from Trenches Filled with Intermediate Layers App 20110117730 - Wann; Clement Hsingjen ;   et al. | 2011-05-19 |
Isolation Structure For Strained Channel Transistors App 20110117724 - KO; Chih-Hsin ;   et al. | 2011-05-19 |
Forming embedded dielectric layers adjacent to sidewalls of shallow trench isolation regions Grant 7,928,474 - Lin , et al. April 19, 2 | 2011-04-19 |
Growing a III-V Layer on Silicon using Aligned Nano-Scale Patterns App 20110086491 - Ko; Chih-Hsin ;   et al. | 2011-04-14 |
High-Quality Hetero-Epitaxy by Using Nano-Scale Epitaxy Technology App 20110062492 - Ko; Chih-Hsin ;   et al. | 2011-03-17 |
Cmos Structure With Multiple Spacers App 20110031538 - HSIEH; Bor Chiuan ;   et al. | 2011-02-10 |
Fin Structure For High Mobility Multiple-gate Transistor App 20110024794 - KO; Chih-Hsin ;   et al. | 2011-02-03 |
Strained channel transistor formation Grant 7,867,860 - Huang , et al. January 11, 2 | 2011-01-11 |
Methods For Forming A Transistor With A Strained Channel App 20100308379 - Kuan; Ta-Ming ;   et al. | 2010-12-09 |
Source/Drain Re-Growth for Manufacturing III-V Based Transistors App 20100301392 - Ko; Chih-Hsin ;   et al. | 2010-12-02 |
Gradient Ternary or Quaternary Multiple-Gate Transistor App 20100301390 - Ko; Chih-Hsin ;   et al. | 2010-12-02 |
Reducing Source/Drain Resistance of III-V Based Transistors App 20100276668 - Ko; Chih-Hsin ;   et al. | 2010-11-04 |
High-Mobility Multiple-Gate Transistor with Improved On-to-Off Current Ratio App 20100252816 - Ko; Chih-Hsin ;   et al. | 2010-10-07 |
Source/Drain Engineering of Devices with High-Mobility Channels App 20100252862 - Ko; Chih-Hsin ;   et al. | 2010-10-07 |
BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture Grant 7,803,718 - Ko , et al. September 28, 2 | 2010-09-28 |
High-Mobility Channel Devices on Dislocation-Blocking Layers App 20100213512 - Ko; Chih-Hsin | 2010-08-26 |
Shallow trench isolation structure for semiconductor device Grant 7,745,904 - Ko , et al. June 29, 2 | 2010-06-29 |
Hybrid Schottky source-drain CMOS for high mobility and low barrier Grant 7,737,532 - Ke , et al. June 15, 2 | 2010-06-15 |
Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit Grant 7,646,068 - Ko , et al. January 12, 2 | 2010-01-12 |
Isolation spacer for thin SOI devices Grant 7,582,934 - Ko , et al. September 1, 2 | 2009-09-01 |
Transistors with stressed channels Grant 7,569,896 - Ko , et al. August 4, 2 | 2009-08-04 |
MOS Devices Having Elevated Source/Drain Regions App 20090140351 - Lin; Hong-Nien ;   et al. | 2009-06-04 |
BiCMOS Performance Enhancement by Mechanical Uniaxial Strain and Methods of Manufacture App 20090117695 - Ko; Chih-Hsin ;   et al. | 2009-05-07 |
MOS transistors with selectively strained channels Grant 7,511,348 - Ko , et al. March 31, 2 | 2009-03-31 |
Forming Embedded Dielectric Layers Adjacent to Sidewalls of Shallow Trench Isolation Regions App 20090045411 - Lin; Hong-Nien ;   et al. | 2009-02-19 |
Transistor mobility improvement by adjusting stress in shallow trench isolation Grant 7,465,620 - Ko , et al. December 16, 2 | 2008-12-16 |
BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture Grant 7,466,008 - Ko , et al. December 16, 2 | 2008-12-16 |
MOS devices having elevated source/drain regions App 20080277735 - Ko; Chih-Hsin ;   et al. | 2008-11-13 |
Strained channel complementary field-effect transistors Grant 7,442,967 - Ko , et al. October 28, 2 | 2008-10-28 |
BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture App 20080224227 - Ko; Chih-Hsin ;   et al. | 2008-09-18 |
MOS transistors with selectively strained channels App 20080224225 - Ko; Chih-Hsin ;   et al. | 2008-09-18 |
CMOS devices with schottky source and drain regions App 20080191285 - Ko; Chih-Hsin ;   et al. | 2008-08-14 |
Semiconductor device and a method of fabricating the device App 20080185659 - Ke; Chung-Hu ;   et al. | 2008-08-07 |
Strained MOS device and methods for forming the same App 20080185617 - Kuan; Ta-Ming ;   et al. | 2008-08-07 |
Isolation Spacer For Thin Soi Devices App 20080142888 - KO; Chih-Hsin ;   et al. | 2008-06-19 |
Isolation Spacer For Thin Soi Devices App 20080145982 - KO; Chih-Hsin ;   et al. | 2008-06-19 |
Dual metal silicides for lowering contact resistance App 20080145984 - Ke; Chung-Hu ;   et al. | 2008-06-19 |
Transistors with stressed channels and methods of manufacture App 20070267694 - Ko; Chih-Hsin ;   et al. | 2007-11-22 |
CMOS devices with improved gap-filling App 20070235823 - Hsu; Ju-Wang ;   et al. | 2007-10-11 |
Shallow trench isolation structure for semiconductor device App 20070235835 - Ko; Chih-Hsin ;   et al. | 2007-10-11 |
Diffusion topography engineering for high performance CMOS fabrication App 20070215936 - Ko; Chih-Hsin ;   et al. | 2007-09-20 |
Isolation structure for strained channel transistors App 20070161206 - Ko; Chih-Hsin ;   et al. | 2007-07-12 |
Transistor mobility improvement by adjusting stress in shallow trench isolation App 20070132035 - Ko; Chih-Hsin ;   et al. | 2007-06-14 |
Hybrid Schottky source-drain CMOS for high mobility and low barrier App 20070052027 - Ke; Chung-Hu ;   et al. | 2007-03-08 |
Dual gate electrode metal oxide semciconductor transistors App 20070018259 - Ko; Chih-Hsin ;   et al. | 2007-01-25 |
Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit App 20060255365 - Ko; Chih-Hsin ;   et al. | 2006-11-16 |
Method of forming a shallow trench isolation structure App 20060205164 - Ko; Chih-Hsin ;   et al. | 2006-09-14 |
Strained channel complementary field-effect transistors and methods of manufacture App 20060189056 - Ko; Chih-Hsin ;   et al. | 2006-08-24 |
Capacitor-less 1T-DRAM cell with Schottky source and drain App 20060125121 - Ko; Chih-Hsin ;   et al. | 2006-06-15 |
Transistor mobility by adjusting stress in shallow trench isolation App 20060121688 - Ko; Chih-Hsin ;   et al. | 2006-06-08 |
CMOS device with selectively formed and backfilled semiconductor substrate areas to improve device performance App 20060118878 - Huang; Yi-Chun ;   et al. | 2006-06-08 |
Self-aligned gated p-i-n diode for ultra-fast switching App 20060091490 - Chen; Hung-Wei ;   et al. | 2006-05-04 |
Isolation spacer for thin SOI devices App 20060081928 - Ko; Chih-Hsin ;   et al. | 2006-04-20 |