Kim; Sung Hoan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kim; Sung Hoan.The latest application filed is for "semiconductor package".

Company Profile

1.10.12

Kim; Sung Hoan - Suwon-si KR
Kim; Sung-Hoan - Gyeonggi-do KR
Kim; Sung-Hoan - Hwasung-gun KR
Kim; Sung-Hoan - Suwon KR
Kim, Sung-Hoan - Suwon-city KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor package Grant 11,244,921 - Joo , et al. February 8, 2	2022-02-08
Semiconductor package Grant 11,171,107 - Choi , et al. November 9, 2	2021-11-09
Semiconductor Package App 20200365545 - JOO; Chang Eun ; et al.	2020-11-19
Semiconductor Package App 20200335468 - Choi; Gyu Jin ; et al.	2020-10-22
Fan-out semiconductor package Grant 10,665,549 - Bae , et al.	2020-05-26
Fan-out Semiconductor Package App 20200051918 - Bae; Sung Hawn ; et al.	2020-02-13
Semiconductor Integrated Circuit Device And Method For Fabricating The Same App 20120032269 - Chang; Dong-ryul ; et al.	2012-02-09
Method of fabricating semiconductor integrated circuit device Grant 8,058,185 - Chang , et al. November 15, 2	2011-11-15
Field effect transistor with a high breakdown voltage and method of manufacturing the same Grant 7,465,978 - Kim , et al. December 16, 2	2008-12-16
Method of fabricating semiconductor integrated circuit device App 20080057689 - Chang; Dong-ryul ; et al.	2008-03-06
Semiconductor integrated circuit device Grant 7,304,387 - Chang , et al. December 4, 2	2007-12-04
Semiconductor integrated circuit device and method for fabricating the same App 20060278949 - Chang; Dong-ryul ; et al.	2006-12-14
Field effect transistor with a high breakdown voltage and method of manufacturing the same App 20060141726 - Kim; Ji-Su ; et al.	2006-06-29
Field effect transistor with a high breakdown voltage and method of manufacturing the same Grant 7,033,896 - Kim , et al. April 25, 2	2006-04-25
Method of manufacturing semiconductor device having shallow trench isolation (STI) Grant 7,029,987 - Kim April 18, 2	2006-04-18
Field effect transistor with a high breakdown voltage and method of manufacturing the same App 20050062104 - Kim, Ji-Su ; et al.	2005-03-24
Fabrication of semiconductor devices having high-voltage MOS transistors and low-voltage MOS transistors Grant 6,709,931 - Kim March 23, 2	2004-03-23
Method of forming shallow trench isolation and method of manufacturing a semiconductor device using the same Grant 6,682,986 - Kim January 27, 2	2004-01-27
Fabrication of semiconductor devices having high-voltage MOS transistors and low-voltage MOS transistors App 20030067050 - Kim, Sung-Hoan	2003-04-10
Method of forming shallow trench isolation and method of manufacturing a semiconductor device using the same App 20020168850 - Kim, Sung-Hoan	2002-11-14
Method of manufacturing semiconductor device having shallow trench isolation (STI) App 20020160579 - Kim, Sung-Hoan	2002-10-31
Semiconductor device fabricating method App 20020111046 - Park, Joo-Han ; et al.	2002-08-15

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