Patent | Date |
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Dynamic random access memory and the method for fabricating thereof Grant 6,689,656 - Kim February 10, 2 | 2004-02-10 |
Dynamic random access memory and the method for fabricating thereof App 20030183861 - Kim, Jae Kap | 2003-10-02 |
Semiconductor device and method of manufacturing thereof Grant 6,605,508 - Kim August 12, 2 | 2003-08-12 |
Method for fabricating semiconductor device App 20030060016 - Kim, Jae Kap | 2003-03-27 |
Semiconductor device and method of manufacturing thereof App 20020158279 - Kim, Jae Kap | 2002-10-31 |
Ferroelectric memory integrated circuit Grant 6,433,376 - Kim August 13, 2 | 2002-08-13 |
Method of manufacturing SRAM cell Grant 6,372,565 - Kim April 16, 2 | 2002-04-16 |
Semiconductor device and method for fabricating the same App 20010027006 - Kim, Jae Kap | 2001-10-04 |
Method for forming memory cell of semiconductor memory device App 20010008783 - Kim, Jae Kap | 2001-07-19 |
Method for fabricating semiconductor device App 20010005616 - Kim, Jae Kap | 2001-06-28 |
Method of manufacturing semiconductor device App 20010005611 - Kim, Jae Kap | 2001-06-28 |
Method for fabricating semiconductor device App 20010003665 - Kim, Jae Kap | 2001-06-14 |
Semiconductor device and method of manufacturing thereof App 20010003662 - Kim, Jae Kap | 2001-06-14 |
Method of manufacturing SRAM cell App 20010001322 - Kim, Jae-Kap | 2001-05-17 |
SRAM cell Grant 6,204,538 - Kim March 20, 2 | 2001-03-20 |
Method of manufacturing a semiconductor device including implanting threshold voltage adjustment ions Grant 6,090,652 - Kim July 18, 2 | 2000-07-18 |
Method of fabricating semiconductor device Grant 6,069,036 - Kim May 30, 2 | 2000-05-30 |
Method of manufacturing analog semiconductor device Grant 5,994,223 - Kim November 30, 1 | 1999-11-30 |
SRAM having enhanced cell ratio Grant 5,955,746 - Kim September 21, 1 | 1999-09-21 |
Method for manufacturing BiCMOS Grant 5,953,603 - Kim September 14, 1 | 1999-09-14 |
Semiconductor device having a SOI structure with substrate bias formed through the insulator and in contact with one of the active diffusion layers Grant 5,945,712 - Kim August 31, 1 | 1999-08-31 |
Method of fabricating an analog semiconductor device having a salicide layer Grant 5,780,333 - Kim July 14, 1 | 1998-07-14 |
Semiconductor device and method for fabrication thereof Grant 5,643,832 - Kim July 1, 1 | 1997-07-01 |
Methods for manufacturing a storage electrode of DRAM cells Grant 5,478,770 - Kim December 26, 1 | 1995-12-26 |
Methods for manufacturing a storage electrode of DRAM cells Grant 5,403,767 - Kim April 4, 1 | 1995-04-04 |
Contact manufacturing method of a multi-layered metal line structure Grant 5,354,713 - Kim , et al. October 11, 1 | 1994-10-11 |
Method for manufacturing an internally shielded dynamic random access memory cell Grant 5,352,621 - Kim , et al. October 4, 1 | 1994-10-04 |
Method of making a semiconductor memory device having a double stacked capacitor Grant 5,059,548 - Kim October 22, 1 | 1991-10-22 |