Keller; Stacia

Patent Applications and Registrations

Patent applications and USPTO patent grants for Keller; Stacia.The latest application filed is for "wafer bonding for embedding active regions with relaxed nanofeatures".

Company Profile

5.31.42

Keller; Stacia - Santa Barbara CA
Keller; Stacia - Goleta CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Wafer Bonding For Embedding Active Regions With Relaxed Nanofeatures App 20220102580 - Reilly; Caroline E. ; et al.	2022-03-31
Novel Approach To Controlling Linearity In N-polar Gan Mishemts App 20210399121 - Romanczyk; Brian ; et al.	2021-12-23
Iii-n Based Material Structures, Methods, Devices And Circuit Modules Based On Strain Management App 20210399096 - Mishra; Umesh K. ; et al.	2021-12-23
Structure for increasing mobility in a high electron mobility transistor Grant 11,101,379 - Romanczyk , et al. August 24, 2	2021-08-24
Iii-n Transistor Structures With Stepped Cap Layers App 20200273974 - Guidry; Matthew ; et al.	2020-08-27
A Structure For Increasing Mobility In A High Electron Mobility Transistor App 20190348532 - Romanczyk; Brian ; et al.	2019-11-14
Method To Achieve Active P-type Layer/layers In Iii-nitride Epitaxial Or Device Structures Having Buried P-type Layers App 20190181329 - Enatsu; Yuuki ; et al.	2019-06-13
Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage Grant 10,312,361 - Chowdhury , et al.	2019-06-04
III-Nitride transistor including a III-N depleting layer Grant 10,043,896 - Mishra , et al. August 7, 2	2018-08-07
Iii-nitride Transistor Including A Iii-n Depleting Layer App 20180102425 - Mishra; Umesh ; et al.	2018-04-12
Carbon doping semiconductor devices Grant 9,865,719 - Keller , et al. January 9, 2	2018-01-09
III-nitride transistor including a p-type depleting layer Grant 9,842,922 - Mishra , et al. December 12, 2	2017-12-12
Buffer layer structures suited for III-nitride devices with foreign substrates Grant 9,685,323 - Keller , et al. June 20, 2	2017-06-20
Trenched Vertical Power Field-effect Transistors With Improved On-resistance And Breakdown Voltage App 20170125574 - Chowdhury; Srabanti ; et al.	2017-05-04
Iii-nitride Transistor Including A P-type Depleting Layer App 20160343840 - Mishra; Umesh ; et al.	2016-11-24
III-nitride transistor including a p-type depleting layer Grant 9,443,938 - Mishra , et al. September 13, 2	2016-09-13
Metalorganic Chemical Vapor Deposition Of Oxide Dielectrics On N-polar Iii-nitride Semiconductors With High Interface Quality And Tunable Fixed Interface Charge App 20160163846 - Liu; Xiang ; et al.	2016-06-09
Carbon Doping Semiconductor Devices App 20160133737 - Keller; Stacia ; et al.	2016-05-12
Carbon Doping Semiconductor Devices App 20160126342 - Keller; Stacia ; et al.	2016-05-05
Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge Grant 9,281,183 - Liu , et al. March 8, 2	2016-03-08
Buffer Layer Structures Suited For Iii-nitride Devices With Foreign Substrates App 20160042946 - Keller; Stacia ; et al.	2016-02-11
Carbon doping semiconductor devices Grant 9,245,993 - Keller , et al. January 26, 2	2016-01-26
Carbon doping semiconductor devices Grant 9,245,992 - Keller , et al. January 26, 2	2016-01-26
Buffer layer structures suited for III-nitride devices with foreign substrates Grant 9,165,766 - Keller , et al. October 20, 2	2015-10-20
Metalorganic Chemical Vapor Deposition Of Oxide Dielectrics On N-polar Iii-nitride Semiconductors With High Interface Quality And Tunable Fixed Interface Charge App 20150200286 - Liu; Xiang ; et al.	2015-07-16
(In,Ga,Al)N optoelectronic devices grown on relaxed (In,Ga,Al)N-on-GaN base layers Grant 9,076,927 - Keller , et al. July 7, 2	2015-07-07
Iii-nitride Transistor Including A P-type Depleting Layer App 20150021552 - Mishra; Umesh ; et al.	2015-01-22
Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition Grant 8,882,935 - Chakraborty , et al. November 11, 2	2014-11-11
Method for heteroepitaxial growth of high channel conductivity and high breakdown voltage nitrogen polar high electron mobility transistors Grant 8,878,249 - Lu , et al. November 4, 2	2014-11-04
Carbon Doping Semiconductor Devices App 20140264455 - Keller; Stacia ; et al.	2014-09-18
Carbon Doping Semiconductor Devices App 20140264370 - Keller; Stacia ; et al.	2014-09-18
(in,ga,al)n Optoelectronic Devices Grown On Relaxed (in,ga,al)n-on-gan Base Layers App 20140131730 - Keller; Stacia ; et al.	2014-05-15
Method For Heteroepitaxial Growth Of High Channel Conductivity And High Breakdown Voltage Nitrogen Polar High Electron Mobility Transistors App 20130307027 - Lu; Jing ; et al.	2013-11-21
Fabrication Of Nonpolar Indium Gallium Nitride Thin Films, Heterostructures, And Devices By Metalorganic Chemical Vapor Deposition App 20130264540 - Chakraborty; Arpan ; et al.	2013-10-10
Buffer Layer Structures Suited For Iii-nitride Devices With Foreign Substrates App 20130200495 - Keller; Stacia ; et al.	2013-08-08
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition Grant 8,502,246 - Chakraborty , et al. August 6, 2	2013-08-06
Method for heteroepitaxial growth of high-quality N-face gallium nitride, indium nitride, and aluminum nitride and their alloys by metal organic chemical vapor deposition Grant 8,455,885 - Keller , et al. June 4, 2	2013-06-04
NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES App 20120205623 - Craven; Michael D. ; et al.	2012-08-16
METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN, AND AIN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION App 20120193638 - Keller; Stacia ; et al.	2012-08-02
Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition Grant 8,193,020 - Keller , et al. June 5, 2	2012-06-05
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices Grant 8,188,458 - Craven , et al. May 29, 2	2012-05-29
Layer Structures For Controlling Stress Of Heteroepitaxially Grown Iii-nitride Layers App 20120126239 - Keller; Stacia ; et al.	2012-05-24
NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES App 20110204329 - Craven; Michael D. ; et al.	2011-08-25
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices Grant 7,982,208 - Craven , et al. July 19, 2	2011-07-19
High light extraction efficiency light emitting diode (LED) with emitters within structured materials Grant 7,977,694 - David , et al. July 12, 2	2011-07-12
TECHNIQUE FOR DEVELOPMENT OF HIGH CURRENT DENSITY HETEROJUNCTION FIELD EFFECT TRANSISTORS BASED ON (10-10)-PLANE GaN BY DELTA-DOPING App 20110057198 - Fujiwara; Tetsuya ; et al.	2011-03-10
METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN, AND AlN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION App 20090246944 - Keller; Stacia ; et al.	2009-10-01
Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AIN and their alloys by metal organic chemical vapor deposition Grant 7,566,580 - Keller , et al. July 28, 2	2009-07-28
Fabrication Of Nonpolar Indium Gallium Nitride Thin Films, Heterostructures And Devices By Metalorganic Chemical Vapor Deposition App 20090146162 - Chakraborty; Arpan ; et al.	2009-06-11
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition Grant 7,504,274 - Chakraborty , et al. March 17, 2	2009-03-17
High Light Extraction Efficiency Light Emitting Diode (led) With Emitters Within Structured Materials App 20080135864 - David; Aurelien J. F. ; et al.	2008-06-12
METHOD FOR HETEROEPITAXIAL GROWTH OF HIGH-QUALITY N-FACE GaN, InN, AND AlN AND THEIR ALLOYS BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION App 20080113496 - Keller; Stacia ; et al.	2008-05-15
LIGHT EMITTING DIODE AND LASER DIODE USING N-FACE GaN, InN, AND AlN AND THEIR ALLOYS App 20080111144 - Fichtenbaum; Nicholas A. ; et al.	2008-05-15
Fabrication Of Nonpolar Indium Gallium Nitride Thin Films, Heterostructures And Devices By Metalorganic Chemical Vapor Deposition App 20070111488 - Chakraborty; Arpan ; et al.	2007-05-17
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition Grant 7,186,302 - Chakraborty , et al. March 6, 2	2007-03-06
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices App 20060278865 - Craven; Michael D. ; et al.	2006-12-14
Semiconductor devices based on coalesced nano-rod arrays App 20060223211 - Mishra; Umesh Kumar ; et al.	2006-10-05
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices Grant 7,091,514 - Craven , et al. August 15, 2	2006-08-15
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition App 20050214992 - Chakraborty, Arpan ; et al.	2005-09-29
Maskless lateral epitaxial overgrowth of aluminum nitride and high aluminum composition aluminum gallium nitride App 20050142876 - Katona, Thomas Matthew ; et al.	2005-06-30
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices App 20050040385 - Craven, Michael D. ; et al.	2005-02-24
Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer Grant 6,849,882 - Chavarkar , et al. February 1, 2	2005-02-01
Method to reduce the dislocation density in group III-nitride films Grant 6,610,144 - Mishra , et al. August 26, 2	2003-08-26
Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer App 20020167023 - Chavarkar, Prashant ; et al.	2002-11-14
Method to reduce the dislocation density in group III-nitride films App 20020069817 - Mishra, Umesh Kumar ; et al.	2002-06-13
High quality, semi-insulating gallium nitride and method and system for forming same Grant 6,261,931 - Keller , et al. July 17, 2	2001-07-17

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