loadpatents
name:-0.018679141998291
name:-0.016273975372314
name:-0.00055503845214844
Kanamoto; Kyozo Patent Filings

Kanamoto; Kyozo

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kanamoto; Kyozo.The latest application filed is for "photoelectric converter and manufacturing method thereof, and photoelectric conversion module".

Company Profile
0.14.14
  • Kanamoto; Kyozo - Tokyo N/A JP
  • Kanamoto, Kyozo - Hyogo JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Photoelectric converter and manufacturing method thereof, and photoelectric conversion module
Grant 8,546,682 - Kanamoto , et al. October 1, 2
2013-10-01
Photoelectric Converter And Manufacturing Method Thereof, And Photoelectric Conversion Module
App 20120160298 - KANAMOTO; Kyozo ;   et al.
2012-06-28
Nitride semiconductor device having a silicon-containing layer and manufacturing method thereof
Grant 8,163,576 - Shiozawa , et al. April 24, 2
2012-04-24
Method for manufacturing nitride semiconductor light-emitting element
Grant 7,964,424 - Kanamoto , et al. June 21, 2
2011-06-21
Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layer
Grant 7,939,943 - Shiozawa , et al. May 10, 2
2011-05-10
Nitride semiconductor device
Grant 7,795,738 - Shiozawa , et al. September 14, 2
2010-09-14
Nitride semiconductor device and manufacturing method of the same
Grant 7,791,097 - Kanamoto , et al. September 7, 2
2010-09-07
Nitride Semiconductor Device Having A Silicon-containing Layer And Manufacturing Method Thereof
App 20100129991 - SHIOZAWA; Katsuomi ;   et al.
2010-05-27
Nitride semiconductor device having a silicon-containing connection layer and manufacturing method thereof
Grant 7,683,398 - Shiozawa , et al. March 23, 2
2010-03-23
Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contact
Grant 7,678,597 - Ohtsuka , et al. March 16, 2
2010-03-16
Process For Producing Nitride Semiconductor Laser, And Nitride Semiconductor Laser
App 20090245311 - KANAMOTO; Kyozo ;   et al.
2009-10-01
Nitride semiconductor device and manufacturing method thereof
Grant 7,582,908 - Kanamoto , et al. September 1, 2
2009-09-01
Method Of Manufacturing Semiconductor Device
App 20090170304 - Tarui; Yoichiro ;   et al.
2009-07-02
Nitride Semiconductor Device And Method Of Manufacturing The Same
App 20090160054 - Shiozawa; Katsuomi ;   et al.
2009-06-25
Nitride Semiconductor Device And Method Of Manufacturing The Same
App 20090146308 - Shiozawa; Katsuomi ;   et al.
2009-06-11
Method Of Manufacturing Semiconductor Device
App 20090142871 - Ohtsuka; Kenichi ;   et al.
2009-06-04
Nitride Semiconductor Device And Method Of Manufacturing The Same
App 20090140389 - Shiozawa; Katsuomi ;   et al.
2009-06-04
Nitride Semiconductor Device And Method Of Manufacturing The Same
App 20090127661 - Shiozawa; Katsuomi ;   et al.
2009-05-21
Method For Manufacturing Nitride Semiconductor Light-emitting Element
App 20090130790 - Kanamoto; Kyozo ;   et al.
2009-05-21
Nitride Semiconductor Device And Manufacturing Method Thereof
App 20080211062 - SHIOZAWA; Katsuomi ;   et al.
2008-09-04
Nitride Semiconductor Device And Manufacturing Method Of The Same
App 20080023799 - KANAMOTO; Kyozo ;   et al.
2008-01-31
Nitride Semiconductor Device And Manufacturing Method Thereof
App 20070231978 - KANAMOTO; Kyozo ;   et al.
2007-10-04
Semiconductor device and method of manufacturing the same
App 20010041438 - Maeda, Shigenobu ;   et al.
2001-11-15
Semiconductor device and method of manufacturing the same
Grant 6,303,425 - Maeda , et al. October 16, 2
2001-10-16
Semiconductor device and method of manufacturing the same
Grant 6,150,688 - Maeda , et al. November 21, 2
2000-11-21
Semiconductor device with storage node
Grant 5,780,888 - Maeda , et al. July 14, 1
1998-07-14
Semiconductor device with columns
Grant 5,627,390 - Maeda , et al. May 6, 1
1997-05-06

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