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Patent applications and USPTO patent grants for KAMIMURA; Tatsuya.The latest application filed is for "radar device".
Patent | Date |
---|---|
Radar Device App 20220082677 - KURASHIGE; Kazunori ;   et al. | 2022-03-17 |
Trench semiconductor device layout configurations Grant 11,245,006 - Dosev , et al. February 8, 2 | 2022-02-08 |
High-voltage MOSFET structures Grant 10,896,885 - West , et al. January 19, 2 | 2021-01-19 |
Radar Device App 20200158817 - KAMBE; Shinichi ;   et al. | 2020-05-21 |
Trench Semiconductor Device Layout Configurations App 20200127092 - Dosev; Dosi ;   et al. | 2020-04-23 |
Trench semiconductor device layout configurations Grant 10,580,861 - Dosev , et al. | 2020-03-03 |
Frequency modulation circuit, FM-CW radar, and high-speed modulation radar Grant 10,393,861 - Kamimura A | 2019-08-27 |
Mosfet With Vertical Variation Of Gate-pillar Separation App 20190081147 - West; Peter ;   et al. | 2019-03-14 |
High-voltage Mosfet Structures App 20190081016 - West; Peter ;   et al. | 2019-03-14 |
Frequency Modulation Circuit, Fm-cw Radar, And High-speed Modulation Radar App 20190049557 - KAMIMURA; Tatsuya | 2019-02-14 |
Trench Semiconductor Device Layout Configurations App 20180175146 - Dosev; Dosi ;   et al. | 2018-06-21 |
High voltage tolerant bonding pad structure for trench-based semiconductor devices Grant 9,899,343 - West , et al. February 20, 2 | 2018-02-20 |
Termination trench structures for high-voltage split-gate MOS devices Grant 9,818,828 - West , et al. November 14, 2 | 2017-11-14 |
High Voltage Tolerant Bonding Pad Structure For Trench-based Semiconductor Devices App 20170263580 - West; Peter ;   et al. | 2017-09-14 |
Termination Trench Structures For High-voltage Split-gate Mos Devices App 20170263718 - West; Peter ;   et al. | 2017-09-14 |
Trench Semiconductor Device Layout Configurations App 20160247879 - Dosev; Dosi ;   et al. | 2016-08-25 |
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