Johnston; Steven W.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Johnston; Steven W..The latest application filed is for "integrating a bottomless via to promote adsorption of antisuppressor on exposed copper surface and enhance electroplating superfill on noble metals".

Company Profile

0.16.18

Johnston; Steven W. - Portland OR
Johnston; Steven W. - Portand OR
Johnston; Steven W. - San Jose CA
Johnston; Steven W. - Golden CO
Johnston; Steven W. - Seabrook TX

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Forming a copper diffusion barrier Grant 8,227,335 - Johnston , et al. July 24, 2	2012-07-24
Integrating A Bottomless Via To Promote Adsorption Of Antisuppressor On Exposed Copper Surface And Enhance Electroplating Superfill On Noble Metals App 20100164108 - Johnston; Steven W. ; et al.	2010-07-01
Method of making a bottomless via Grant 7,694,413 - Johnston , et al. April 13, 2	2010-04-13
Atomic layer deposited tantalum containing adhesion layer Grant 7,605,469 - Johnston , et al. October 20, 2	2009-10-20
Atomic layer deposited tantalum containing adhesion layer Grant 7,601,637 - Johnston , et al. October 13, 2	2009-10-13
Amine-free deposition of metal-nitride films Grant 7,550,385 - Lavoie , et al. June 23, 2	2009-06-23
Atomic layer deposited tantalum containing adhesion layer App 20090155998 - Johnston; Steven W. ; et al.	2009-06-18
Noble metal barrier and seed layer for semiconductors Grant 7,459,392 - Johnston , et al. December 2, 2	2008-12-02
Alloyed underlayer for microelectronic interconnects Grant 7,435,679 - Johnston , et al. October 14, 2	2008-10-14
Post polish anneal of atomic layer deposition barrier layers Grant 7,335,587 - Johnston , et al. February 26, 2	2008-02-26
Integrating a bottomless via to promote adsorption of antisuppressor on exposed copper surface and enhance electroplating superfill on noble metals App 20080000678 - Johnston; Steven W. ; et al.	2008-01-03
Forming a copper diffusion barrier App 20070298608 - Johnston; Steven W. ; et al.	2007-12-27
Forming a copper diffusion barrier Grant 7,279,423 - Johnston , et al. October 9, 2	2007-10-09
Low k ILD layer with a hydrophilic portion Grant 7,241,706 - Johnston , et al. July 10, 2	2007-07-10
Amine-free deposition of metal-nitride films App 20070075427 - Lavoie; Adrien R. ; et al.	2007-04-05
Post polish anneal of atomic layer deposition barrier layers App 20070004230 - Johnston; Steven W. ; et al.	2007-01-04
Method for adhesion and deposition of metal films which provide a barrier and permit direct plating App 20060286800 - Dominguez; Juan E. ; et al.	2006-12-21
Nobel metal barrier and seed layer for semiconductors App 20060220249 - Johnston; Steven W. ; et al.	2006-10-05
Densifying a relatively porous material Grant 7,071,126 - Johnston , et al. July 4, 2	2006-07-04
Uniformity in batch spray processing using independent cassette rotation App 20060131276 - Johnston; Steven W. ; et al.	2006-06-22
Alloyed underlayer for microelectronic interconnects App 20060118968 - Johnston; Steven W. ; et al.	2006-06-08
Forming a combined copper diffusion barrier and seed layer App 20060063379 - Dory; Thomas S. ; et al.	2006-03-23
Low k ILD layer with a hydrophilic portion App 20060057838 - Johnston; Steven W. ; et al.	2006-03-16
Atomic layer deposited tantalum containing adhesion layer App 20060003581 - Johnston; Steven W. ; et al.	2006-01-05
Densifying a relatively porous material App 20050181631 - Johnston, Steven W. ; et al.	2005-08-18
Plating a conductive material on a dielectric material Grant 6,867,473 - Goodner , et al. March 15, 2	2005-03-15
Densifying a relatively porous material App 20040229452 - Johnston, Steven W. ; et al.	2004-11-18
Plating a conductive material on a dielectric material App 20040104483 - Goodner, Michael D. ; et al.	2004-06-03
Forming a copper diffusion barrier App 20040084773 - Johnston, Steven W. ; et al.	2004-05-06
Plating a conductive material on a dielectric material Grant 6,682,989 - Goodner , et al. January 27, 2	2004-01-27
MOCVD of WNx thin films using imido precursors Grant 6,596,888 - McElwee-White , et al. July 22, 2	2003-07-22
MOCVD of WNx thin films using imido precursors App 20020045343 - McElwee-White, Lisa ; et al.	2002-04-18
Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials Grant 6,369,603 - Johnston , et al. April 9, 2	2002-04-09
Apparatus for recharging a heated receptacle with particulate matter at a controlled velocity Grant 5,419,462 - Johnston , et al. May 30, 1	1995-05-30

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